页 166 - 晶体管 - FET,MOSFET - 阵列 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - FET,MOSFET - 阵列

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零件编号
制造商
描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRF9389PBF
Infineon Technologies

MOSFET N/P-CH 30V 6.8A/4.6A 8-SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.6A
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.8A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存3,216
Logic Level Gate
30V
6.8A, 4.6A
27 mOhm @ 6.8A, 10V
2.3V @ 10µA
14nC @ 10V
398pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot IRF7755TR
Infineon Technologies

MOSFET 2P-CH 20V 3.9A 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A
  • Rds On (Max) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: 8-TSSOP (0.173", 4.40mm Width)
库存47,760
Logic Level Gate
20V
3.9A
51 mOhm @ 3.7A, 4.5V
1.2V @ 250µA
17nC @ 4.5V
1090pF @ 15V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
PHKD13N03LT,118
Nexperia USA Inc.

MOSFET 2N-CH 30V 10.4A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.4A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
  • Power - Max: 3.57W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存2,416
Logic Level Gate
30V
10.4A
20 mOhm @ 8A, 10V
2V @ 250µA
10.7nC @ 5V
752pF @ 15V
3.57W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SI4650DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 15V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存6,048
Standard
30V
8A
18 mOhm @ 8A, 10V
3V @ 1mA
40nC @ 10V
1550pF @ 15V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
NTLUD3191PZTBG
ON Semiconductor

MOSFET 2P-CH 20V 1.1A 6UDFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (1.6x1.6)
封装: 6-UFDFN Exposed Pad
库存3,520
Logic Level Gate
20V
1.1A
250 mOhm @ 1.5A, 4.5V
1V @ 250µA
3.5nC @ 4.5V
160pF @ 10V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UFDFN Exposed Pad
6-UDFN (1.6x1.6)
APTM50AM25FTG
Microsemi Corporation

MOSFET 2N-CH 500V 149A SP4

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 149A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 74.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 29600pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
封装: SP4
库存7,280
Standard
500V
149A
25 mOhm @ 74.5A, 10V
4V @ 8mA
1200nC @ 10V
29600pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
FDS8958
Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 7A/5A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A, 5A
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 789pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存5,840
Logic Level Gate
30V
7A, 5A
28 mOhm @ 7A, 10V
3V @ 250µA
26nC @ 10V
789pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
GWM180-004X2-SLSAM
IXYS

MOSFET 6N-CH 40V 180A 17-SMD

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 180A
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Flat Leads
  • Supplier Device Package: ISOPLUS-DIL?
封装: 17-SMD, Flat Leads
库存4,688
Standard
40V
180A
2.5 mOhm @ 100A, 10V
4.5V @ 1mA
110nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
17-SMD, Flat Leads
ISOPLUS-DIL?
ALD212900ASAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8SOIC

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 80mA
  • Rds On (Max) @ Id, Vgs: 14 Ohm
  • Vgs(th) (Max) @ Id: 10mV @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存5,888
Logic Level Gate
10.6V
80mA
14 Ohm
10mV @ 20µA
-
30pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot SI1967DH-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 1.3A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A
  • Rds On (Max) @ Id, Vgs: 490 mOhm @ 910mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
封装: 6-TSSOP, SC-88, SOT-363
库存364,476
Logic Level Gate
20V
1.3A
490 mOhm @ 910mA, 4.5V
1V @ 250µA
4nC @ 8V
110pF @ 10V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
MCH6663-TL-W
ON Semiconductor

MOSFET N/P-CH 30V 1.8/1.5A MCPH6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A, 1.5A
  • Rds On (Max) @ Id, Vgs: 188 mOhm @ 900mA, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: SC-88FL/ MCPH6
封装: 6-SMD, Flat Leads
库存2,816
Logic Level Gate, 4V Drive
30V
1.8A, 1.5A
188 mOhm @ 900mA, 10V
2.6V @ 1mA
2nC @ 10V
88pF @ 10V
800mW
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, Flat Leads
SC-88FL/ MCPH6
hot SIA921EDJ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 7.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
封装: PowerPAK? SC-70-6 Dual
库存3,040,632
Logic Level Gate
20V
4.5A
59 mOhm @ 3.6A, 4.5V
1.4V @ 250µA
23nC @ 10V
-
7.8W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
ALD1105SBL
Advanced Linear Devices Inc.

MOSFET 2N/2P-CH 10.6V 14SOIC

  • FET Type: 2 N and 2 P-Channel Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
封装: 14-SOIC (0.154", 3.90mm Width)
库存6,688
Standard
10.6V
-
500 Ohm @ 5V
1V @ 1µA
-
3pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
FDMD8260LET60
Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 15A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5245pF @ 30V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerWDFN
  • Supplier Device Package: 12-Power3.3x5
封装: 12-PowerWDFN
库存4,864
Standard
60V
15A
5.8 mOhm @ 15A, 10V
3V @ 250µA
68nC @ 10V
5245pF @ 30V
1.1W
-55°C ~ 175°C (TJ)
Surface Mount
12-PowerWDFN
12-Power3.3x5
SIZ914DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 16A PWRPAIR

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A, 40A
  • Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V
  • Power - Max: 22.7W, 100W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-PowerPair?
封装: 8-WDFN Exposed Pad
库存5,888
Logic Level Gate
30V
16A, 40A
6.4 mOhm @ 19A, 10V
2.4V @ 250µA
26nC @ 10V
1208pF @ 15V
22.7W, 100W
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-PowerPair?
SH8J31GZETB
Rohm Semiconductor

60V PCH+PCH MIDDLE POWER MOSFET

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存3,568
-
60V
4.5A
70 mOhm @ 4.5A, 10V
3V @ 1mA
40nC @ 10V
2500pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
CSD85302LT
Texas Instruments

MOSFET 2N-CH

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFLGA
  • Supplier Device Package: 4-Picostar (1.31x1.31)
封装: 4-XFLGA
库存32,436
Standard
-
-
-
-
7.8nC @ 4.5V
-
1.7W
-55°C ~ 150°C (TJ)
Surface Mount
4-XFLGA
4-Picostar (1.31x1.31)
PMDPB56XNEAX
Nexperia USA Inc.

MOSFET ARRAY 2NCH 30V DFN2020D-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 15V
  • Power - Max: 485mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020D-6
封装: 6-UDFN Exposed Pad
库存25,632
Standard
30V
3.1A (Ta)
72 mOhm @ 3.1A, 4.5V
1.25V @ 250µA
5nC @ 4.5V
256pF @ 15V
485mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
DFN2020D-6
DMC31D5UDJ-7B
Diodes Incorporated

MOSFET N/P-CH 30V SOT963

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
封装: SOT-963
库存78,582
Logic Level Gate
30V
220mA, 200mA
1.5 Ohm @ 100mA, 4.5V
1V @ 250µA
0.38nC @ 4.5V
22.6pF @ 15V
350mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963
DMG6602SVTQ-7
Diodes Incorporated

MOSFET N/P-CH 30V TSOT26

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
  • Power - Max: 840mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
封装: SOT-23-6 Thin, TSOT-23-6
库存54,840
Logic Level Gate
30V
3.4A, 2.8A
60 mOhm @ 3.1A, 10V
2.3V @ 250µA
13nC @ 10V
400pF @ 15V
840mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
ALD1106SBL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 14SOIC

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
封装: 14-SOIC (0.154", 3.90mm Width)
库存34,962
Standard
10.6V
-
500 Ohm @ 5V
1V @ 1µA
-
3pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
SI7232DN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 25A PPAK 1212-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 10A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
  • Power - Max: 23W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
封装: PowerPAK? 1212-8 Dual
库存75,822
Logic Level Gate
20V
25A
16.4 mOhm @ 10A, 4.5V
1V @ 250µA
32nC @ 8V
1220pF @ 10V
23W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
QH8K51TR
Rohm Semiconductor

MOSFET 2N-CH 100V 2A TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
封装: -
库存48,780
-
100V
2A (Ta)
325mOhm @ 2A, 10V
2.5V @ 1mA
4.7nC @ 5V
290pF @ 25V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
UPA675T-T1-A
Renesas Electronics Corporation

MOSFET 2N-CH 16V 0.1A SC88

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 3V
  • Power - Max: 200mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88
封装: -
Request a Quote
-
16V
100mA
12Ohm @ 10mA, 4V
1.1V @ 10µA
-
10pF @ 3V
200mW
-
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88
CSD87330Q3DT
Texas Instruments

MOSFET 2N-CH 30V 20A 8LSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Rds On (Max) @ Id, Vgs: 9.45mOhm @ 15A, 5V, 3.6mOhm @ 15A, 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V, 11.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V, 1632pF @ 15V
  • Power - Max: 6W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: 8-LSON (3.3x3.3)
封装: -
Request a Quote
-
30V
20A (Ta)
9.45mOhm @ 15A, 5V, 3.6mOhm @ 15A, 5V
2.1V @ 250µA, 1.15V @ 250µA
5.8nC @ 4.5V, 11.5nC @ 4.5V
900pF @ 15V, 1632pF @ 15V
6W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerLDFN
8-LSON (3.3x3.3)
WAB400M12BM3
Wolfspeed, Inc.

SIC 2N-CH 1200V 468A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 468A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.25mOhm @ 400A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 106mA
  • Gate Charge (Qg) (Max) @ Vgs: 1040nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
库存63
-
1200V (1.2kV)
468A (Tc)
4.25mOhm @ 400A, 15V
3.6V @ 106mA
1040nC @ 15V
29700pF @ 800V
-
-40°C ~ 175°C (TJ)
Chassis Mount
Module
Module
SQ3985EV-T1_GE3
Vishay Siliconix

MOSFET 2P-CH 20V 3.9A 6TSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
  • Rds On (Max) @ Id, Vgs: 145mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
  • Power - Max: 3W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
封装: -
库存12,420
-
20V
3.9A (Tc)
145mOhm @ 2.8A, 4.5V
1.5V @ 250µA
4.6nC @ 4.5V
350pF @ 10V
3W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
QH8KE5TCR
Rohm Semiconductor

100V 2.0A, DUAL NCH+NCH, TSMT8,

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Rds On (Max) @ Id, Vgs: 202mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
封装: -
库存9,000
-
100V
2A (Ta)
202mOhm @ 2A, 10V
2.5V @ 1mA
2.8nC @ 10V
90pF @ 50V
1.5W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
SP8M3HZGTB
Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: -
库存6,975
-
30V
5A (Ta), 4.5A (Ta)
51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
2.5V @ 1mA
3.9nC @ 5V, 8.5nC @ 5V
230pF @ 10V, 850pF @ 10V
2W (Ta)
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMN62D2UVTQ-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
封装: -
Request a Quote
-
60V
455mA (Ta)
2Ohm @ 50mA, 5V
1V @ 250µA
0.8nC @ 4.5V
41pF @ 30V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26