页 147 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品 | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-87210559 ext.802
登入/注册
BOM
购物车 0

晶体管 - FET，MOSFET - 阵列

记录 5,684
页  147/190
图片
零件编号
制造商
描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF7389TR
Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Power - Max: 2.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存13,944
Logic Level Gate
30V
-
29 mOhm @ 5.8A, 10V
1V @ 250µA
33nC @ 10V
650pF @ 25V
2.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot TPC8208(TE12L,Q,M)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 5A SOP8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (5.5x6.0)
封装: 8-SOIC (0.173", 4.40mm Width)
库存19,932
Logic Level Gate
20V
5A
50 mOhm @ 2.5A, 4V
1.2V @ 200µA
9.5nC @ 5V
780pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)
hot FDS4953
Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 5A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 528pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存158,856
Logic Level Gate
30V
5A
55 mOhm @ 5A, 10V
3V @ 250µA
9nC @ 5V
528pF @ 15V
900mW
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI4914DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 5.5A 8-SOIC

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.7A
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W, 1.16W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存856,104
Logic Level Gate
30V
5.5A, 5.7A
23 mOhm @ 7A, 10V
2.5V @ 250µA
8.5nC @ 4.5V
-
1.1W, 1.16W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SSD2007ASTF
Fairchild/ON Semiconductor

MOSFET 2N-CH 50V 2A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存4,672
Logic Level Gate
50V
2A
300 mOhm @ 1.5A, 10V
4V @ 250µA
15nC @ 10V
-
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SP8M8TB
Rohm Semiconductor

MOSFET N/P-CH 30V 6A/4.5A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存6,976
Logic Level Gate
30V
6A, 4.5A
30 mOhm @ 6A, 10V
2.5V @ 1mA
7.2nC @ 5V
520pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
APTM100H35FTG
Microsemi Corporation

MOSFET 4N-CH 1000V 22A SP4

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 22A
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
封装: SP4
库存6,048
Standard
1000V (1kV)
22A
420 mOhm @ 11A, 10V
5V @ 2.5mA
186nC @ 10V
5200pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
NVMD6P02R2G
ON Semiconductor

MOSFET 2P-CH 20V 4.8A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 6.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 16V
  • Power - Max: 750mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存5,376
Logic Level Gate
20V
4.8A
33 mOhm @ 6.2A, 4.5V
1.2V @ 250µA
35nC @ 4.5V
1700pF @ 16V
750mW
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
EFC6617R-A-TF
ON Semiconductor

MOSFET N-CH DUAL 2.5V 6CSP

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存7,120
-
-
-
-
-
-
-
-
-
-
-
-
hot LN60A01ES-LF-Z
Monolithic Power Systems Inc.

MOSFET 3N-CH 600V 0.08A 8SOIC

  • FET Type: 3 N-Channel, Common Gate
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 80mA
  • Rds On (Max) @ Id, Vgs: 190 Ohm @ 10mA, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -20°C ~ 125°C (TJ)
  • Mounting Type: -
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存30,000
Standard
600V
80mA
190 Ohm @ 10mA, 10V
1.2V @ 250µA
-
-
1.3W
-20°C ~ 125°C (TJ)
-
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot SI1900DL-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 0.59A SC70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 590mA
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 590mA, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 270mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
封装: 6-TSSOP, SC-88, SOT-363
库存363,516
Logic Level Gate
30V
590mA
480 mOhm @ 590mA, 10V
3V @ 250µA
1.4nC @ 10V
-
270mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
hot IRF7307TRPBF
Infineon Technologies

MOSFET N/P-CH 20V 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存413,652
Logic Level Gate
20V
5.2A, 4.3A
50 mOhm @ 2.6A, 4.5V
700mV @ 250µA
20nC @ 4.5V
660pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDS6898A
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 9.4A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1821pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存107,844
Logic Level Gate
20V
9.4A
14 mOhm @ 9.4A, 4.5V
1.5V @ 250µA
23nC @ 4.5V
1821pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot DMC2020USD-13
Diodes Incorporated

MOSFET N/P-CH 20V 7.8A/6.3A 8SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A, 6.3A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存830,028
Logic Level Gate
20V
7.8A, 6.3A
20 mOhm @ 7A, 4.5V
1.5V @ 250µA
11.6nC @ 4.5V
1149pF @ 10V
1.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot AO4800B
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 6.9A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存12,352,788
Logic Level Gate
30V
6.9A
27 mOhm @ 6.9A, 10V
1.5V @ 250µA
7nC @ 4.5V
630pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDC6305N
Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 2.7A SSOT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: SuperSOT?-6
封装: SOT-23-6 Thin, TSOT-23-6
库存266,388
Logic Level Gate
20V
2.7A
80 mOhm @ 2.7A, 4.5V
1.5V @ 250µA
5nC @ 4.5V
310pF @ 10V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
SuperSOT?-6
SK2S240-45
SMC Diode Solutions

45V, 240A, SOT-227, POWER MODULE

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存108
-
-
-
-
-
-
-
-
-
-
-
-
NVMJD016N06CTWG
onsemi

MOSFET N-CH 60V LFPAK56

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMN3060LVT-7
Diodes Incorporated

MOSFET 2N-CH 30V 3.6A TSOT26

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
封装: -
Request a Quote
-
30V
3.6A (Ta)
60mOhm @ 3.1A, 10V
1.8V @ 250µA
11.3nC @ 10V
395pF @ 15V
830mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
MSCSM170TLM11CAG
Microchip Technology

SIC 4N-CH 1700V 238A SP6C

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
  • Power - Max: 1114W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP6C
封装: -
库存15
-
1700V (1.7kV)
238A (Tc)
11.3mOhm @ 120A, 20V
3.2V @ 10mA
712nC @ 20V
13200pF @ 1000V
1114W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP6C
AON6984
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 19A/50A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 50A (Tc), 26A (Ta), 82A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, 2.8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 10V, 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 15V, 2120pF @ 15V
  • Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 31W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-DFN (5x6)
封装: -
Request a Quote
-
30V
19A (Ta), 50A (Tc), 26A (Ta), 82A (Tc)
5.2mOhm @ 20A, 10V, 2.8mOhm @ 20A, 10V
2.2V @ 250µA, 1.9V @ 250µA
12.8nC @ 10V, 37nC @ 10V
810pF @ 15V, 2120pF @ 15V
3.1W (Ta), 21W (Tc), 3.1W (Ta), 31W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-DFN (5x6)
CAB006A12GM3T
Wolfspeed, Inc.

SIC 2N-CH 1200V 200A MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
  • Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 69mA
  • Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
-
1200V (1.2kV)
200A (Tj)
6.9mOhm @ 200A, 15V
3.6V @ 69mA
708nC @ 15V
20400pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
Module
DMC3032LFDB-13
Diodes Incorporated

MOSFET N/P-CH 30V 5.3A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 3.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA, 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V, 7.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 336pF @ 25V
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: -
Request a Quote
-
30V
5.3A (Ta), 3.4A (Ta)
30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V
2V @ 250µA, 2.1V @ 250µA
10.6nC @ 10V, 7.8nC @ 10V
500pF @ 15V, 336pF @ 25V
800mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
GCMX080A120B2H1P
SemiQ

SIC 1200V 80M MOSFET FULL-BRIDGE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V
  • Power - Max: 119W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
封装: -
库存90
-
1200V (1.2kV)
27A (Tc)
100mOhm @ 20A, 20V
4V @ 10mA
56nC @ 20V
1362pF @ 800V
119W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM70AM07T3AG
Microchip Technology

SIC 2N-CH 700V 353A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 12mA
  • Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
  • Power - Max: 988W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
封装: -
库存18
-
700V
353A (Tc)
6.4mOhm @ 120A, 20V
2.4V @ 12mA
645nC @ 20V
13500pF @ 700V
988W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
MSCSM120AM50T1AG
Microchip Technology

SIC 2N-CH 1200V 55A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.7V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
  • Power - Max: 245W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
封装: -
Request a Quote
-
1200V (1.2kV)
55A (Tc)
50mOhm @ 40A, 20V
2.7V @ 1mA
137nC @ 20V
1990pF @ 1000V
245W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
SI1036X-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 0.61A SC89-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
  • Rds On (Max) @ Id, Vgs: 540mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 15V
  • Power - Max: 220mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
封装: -
库存28,047
-
30V
610mA (Ta)
540mOhm @ 500mA, 4.5V
1V @ 250µA
1.2nC @ 4.5V
36pF @ 15V
220mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
CAB008M12GM3
Wolfspeed, Inc.

SIC 2N-CH 1200V

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 46mA
  • Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
封装: -
库存120
-
1200V (1.2kV)
-
10.4mOhm @ 150A, 15V
3.6V @ 46mA
472nC @ 15V
13600pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
SQJ560EP-T1_BE3
Vishay Siliconix

MOSFET N/P-CH 60V 30A PPAK SO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 18A (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
  • Power - Max: 34W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® SO-8 Dual
  • Supplier Device Package: PowerPAK® SO-8 Dual
封装: -
库存17,970
-
60V
30A (Tc), 18A (Tc)
12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V
2.5V @ 250µA
30nC @ 10V, 45nC @ 10V
1650pF @ 25V
34W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
DMC3020UDVW-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V POWERDI333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 17A (Tc)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 1.85V @ 250µA, 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, 13.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, 782pF @ 15V
  • Power - Max: 1.18W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXD)
封装: -
Request a Quote
-
30V
20A (Tc), 17A (Tc)
31mOhm @ 6A, 10V, 42mOhm @ 4.9A, 10V
1.85V @ 250µA, 2.1V @ 250µA
8.8nC @ 10V, 13.6nC @ 10V
383pF @ 15V, 782pF @ 15V
1.18W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXD)