页 146 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AON2800	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 4.5A 6DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 47 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-DFN-EP (2x2)	封装: 6-WDFN Exposed Pad	库存11,724	Logic Level Gate	20V	4.5A	47 mOhm @ 4A, 4.5V	1.2V @ 250µA	6nC @ 4.5V	435pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-DFN-EP (2x2)
SI4226DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 25V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 15V Power - Max: 3.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存960,504	Standard	25V	8A	19.5 mOhm @ 7A, 4.5V	2V @ 250µA	36nC @ 10V	1255pF @ 15V	3.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MP6K31TR	Rohm Semiconductor	MOSFET 2N-CH 60V 2A MPT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 290 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: MPT6	封装: 6-SMD, Flat Leads	库存7,808	Logic Level Gate	60V	2A	290 mOhm @ 2A, 10V	2.5V @ 1mA	2nC @ 5V	110pF @ 10V	2W	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	MPT6
CSD75205W1015	Texas Instruments	MOSFET 2P-CH 20V 1.2A 6DSBGA FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.2A Rds On (Max) @ Id, Vgs: 120 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 10V Power - Max: 750mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFBGA, DSBGA Supplier Device Package: 6-DSBGA (1x1.5)	封装: 6-UFBGA, DSBGA	库存17,808	Logic Level Gate	20V	1.2A	120 mOhm @ 1A, 4.5V	850mV @ 250µA	2.2nC @ 4.5V	265pF @ 10V	750mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFBGA, DSBGA	6-DSBGA (1x1.5)
SI1988DH-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 1.3A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 168 mOhm @ 1.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	封装: 6-TSSOP, SC-88, SOT-363	库存5,376	Logic Level Gate	20V	1.3A	168 mOhm @ 1.4A, 4.5V	1V @ 250µA	4.1nC @ 8V	110pF @ 10V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
MMDF2N02ER2	ON Semiconductor	MOSFET 2N-CH 25V 3.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 532pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存884,412	Logic Level Gate	25V	3.6A	100 mOhm @ 2.2A, 10V	3V @ 250µA	30nC @ 10V	532pF @ 16V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IRF7316PBF	Infineon Technologies	MOSFET 2P-CH 30V 4.9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,696	Logic Level Gate	30V	4.9A	58 mOhm @ 4.9A, 10V	1V @ 250µA	34nC @ 10V	710pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BSL806NH6327XTSA1	Infineon Technologies	MOSFET N-CH TSOP6-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V Vgs(th) (Max) @ Id: 750mV @ 11µA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	封装: SOT-23-6 Thin, TSOT-23-6	库存3,488	Logic Level Gate, 1.8V Drive	20V	2.3A (Ta)	57 mOhm @ 2.3A, 2.5V	750mV @ 11µA	1.7nC @ 2.5V	259pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
FMM50-025TF	IXYS	MOSFET 2N-CH 250V 30A I4-PAC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 50 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Power - Max: 125W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	封装: i4-Pac?-5	库存4,960	Standard	250V	30A	50 mOhm @ 25A, 10V	4.5V @ 250µA	78nC @ 10V	4000pF @ 25V	125W	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-5	ISOPLUS i4-PAC?
ALD110808PCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V Vgs(th) (Max) @ Id: 820mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	封装: 16-DIP (0.300", 7.62mm)	库存6,880	Standard	10.6V	12mA, 3mA	500 Ohm @ 4.8V	820mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
SI7540DP-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 12V 7.6A PPAK SO-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.6A, 5.7A Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存4,432	Logic Level Gate	12V	7.6A, 5.7A	17 mOhm @ 11.8A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
CSD87352Q5D	Texas Instruments	MOSFET 2N-CH 30V 25A 8SON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.15V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V Power - Max: 8.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-LSON (5x6)	封装: 8-PowerLDFN	库存29,172	Logic Level Gate	30V	25A	-	1.15V @ 250µA	12.5nC @ 4.5V	1800pF @ 15V	8.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	8-LSON (5x6)
SIZ300DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 11A POWERPAIR FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A, 28A Rds On (Max) @ Id, Vgs: 24 mOhm @ 9.8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Power - Max: 16.7W, 31W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair?	封装: 8-PowerWDFN	库存15,360	Logic Level Gate	30V	11A, 28A	24 mOhm @ 9.8A, 10V	2.4V @ 250µA	12nC @ 10V	400pF @ 15V	16.7W, 31W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair?
FDMS3602AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 15A/26A POWER56 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 15A, 26A Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V Power - Max: 2.2W, 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	封装: 8-PowerTDFN	库存48,240	Logic Level Gate	25V	15A, 26A	5.6 mOhm @ 15A, 10V	3V @ 250µA	27nC @ 10V	1770pF @ 13V	2.2W, 2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
SI9933CDY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 4A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V Power - Max: 3.1W Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存62,304	Logic Level Gate	20V	4A	58 mOhm @ 4.8A, 4.5V	1.4V @ 250µA	26nC @ 10V	665pF @ 10V	3.1W	-50°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI7998DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 25A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A, 30A Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Power - Max: 22W, 40W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存6,108	Logic Level Gate	30V	25A, 30A	9.3 mOhm @ 15A, 10V	2.5V @ 250µA	26nC @ 10V	1100pF @ 15V	22W, 40W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
BUK9K134-100EX	Nexperia USA Inc.	MOSFET 2N-CH 100V 8.5A 56LFPAK FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8.5A Rds On (Max) @ Id, Vgs: 159 mOhm @ 5A, 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V Power - Max: 32W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封装: SOT-1205, 8-LFPAK56	库存25,836	Logic Level Gate	100V	8.5A	159 mOhm @ 5A, 5V	2.1V @ 1mA	7.4nC @ 5V	755pF @ 25V	32W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
PHC2300,118	Nexperia USA Inc.	MOSFET N/P-CH 300V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 340mA, 235mA Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 102pF @ 50V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存15,012	Logic Level Gate	300V	340mA, 235mA	6 Ohm @ 170mA, 10V	2V @ 1mA	6.24nC @ 10V	102pF @ 50V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
2N7002BKS,115	Nexperia USA Inc.	MOSFET 2N-CH 60V 0.3A 6TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 295mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封装: 6-TSSOP, SC-88, SOT-363	库存151,056	Logic Level Gate	60V	300mA	1.6 Ohm @ 500mA, 10V	2.1V @ 250µA	0.6nC @ 4.5V	50pF @ 10V	295mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
SI1026X-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 0.305A SC89-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	封装: SOT-563, SOT-666	库存1,139,760	Logic Level Gate	60V	305mA	1.4 Ohm @ 500mA, 10V	2.5V @ 250µA	0.6nC @ 4.5V	30pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
NTE2960	NTE Electronics, Inc	MOSFET 2N-CH 900V 7A TO220 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 2Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V Power - Max: 40W Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack	封装: -	Request a Quote	-	900V	7A	2Ohm @ 3A, 10V	4V @ 1mA	-	1380pF @ 25V	40W	-55°C ~ 150°C	Through Hole	TO-220-3 Full Pack	TO-220 Full Pack
IPG20N04S4L18AATMA1	Infineon Technologies	MOSFET 2N-CH 40V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1071pF @ 25V Power - Max: 26W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	封装: -	库存14,310	-	40V	20A (Tc)	18mOhm @ 17A, 10V	2.2V @ 8µA	15nC @ 10V	1071pF @ 25V	26W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerVDFN	PG-TDSON-8-10
DMC2053UFDBQ-7	Diodes Incorporated	MOSFET N/P-CH 20V 4.6A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.1A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V, 12.7nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V Power - Max: 820mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: -	Request a Quote	-	20V	4.6A (Ta), 3.1A (Ta)	35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V	1V @ 250µA	7.7nC @ 10V, 12.7nC @ 8V	369pF @ 10V, 440pF @ 10V	820mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
UPA2561T1H-T1-AT	Renesas Electronics Corporation	MOSFET 2N-CH 20V 4.5A 8VSOF FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V Power - Max: 2.2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-VSOF	封装: -	Request a Quote	Logic Level Gate	20V	4.5A	50mOhm @ 2A, 4.5V	1.5V @ 1mA	5.4nC @ 4.5V	455pF @ 10V	2.2W	-	Surface Mount	8-SMD, Flat Lead	8-VSOF
FDD8424H-F085A	onsemi	MOSFET N/P-CH 40V 9A/6.5A TO252 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252 (DPAK)	封装: -	Request a Quote	Logic Level Gate	40V	9A, 6.5A	24mOhm @ 9A, 10V	3V @ 250µA	20nC @ 10V	1000pF @ 20V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5, DPAK (4 Leads + Tab), TO-252AD	TO-252 (DPAK)
DMN62D2UDM-7	Diodes Incorporated	2N7002 FAMILY SOT26 T&R 3K FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	封装: -	Request a Quote	-	60V	440mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.8nC @ 4.5V	41pF @ 30V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
NVMJD7D4N04CLTWG	onsemi	MOSFET N-CH 40V LFPAK56 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SIZ346DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 17A/30A 8PWR33 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc) Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V Power - Max: 16W, 16.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	封装: -	库存11,772	-	30V	17A (Tc), 30A (Tc)	28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V	2.2V @ 250µA, 2.4V @ 250µA	5nC @ 4.5V, 9nC @ 4.5V	325pF @ 15V, 650pF @ 15V	16W, 16.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
BUK9MHH-65PNN-518	Nexperia USA Inc.	MOSFET 2N-CH 65V 15A 20SO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 65V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 44.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3643pF @ 25V Power - Max: 5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SO	封装: -	Request a Quote	Logic Level Gate	65V	15A (Tc)	10.6mOhm @ 10A, 10V	2V @ 1mA	44.6nC @ 5V	3643pF @ 25V	5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	20-SOIC (0.295", 7.50mm Width)	20-SO
XP4509AGM	YAGEO XSEMI	MOSFET N AND P-CH 30V 11.2A 8A FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 8A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V, 21mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V, 2000pF @ 25V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC Supplier Device Package: 8-SO	封装: -	库存2,970	-	30V	11.2A (Ta), 8A (Ta)	10mOhm @ 10A, 10V, 21mOhm @ 7A, 10V	3V @ 250µA	19.2nC @ 4.5V	1140pF @ 25V, 2000pF @ 25V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SO

AON2800

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 4.5A 6DFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 47 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-DFN-EP (2x2)

封装: 6-WDFN Exposed Pad

库存11,724

Logic Level Gate

20V

4.5A

47 mOhm @ 4A, 4.5V

1.2V @ 250µA

6nC @ 4.5V

435pF @ 10V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-DFN-EP (2x2)

SI4226DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 25V 8A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 15V
Power - Max: 3.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存960,504

Standard

25V

8A

19.5 mOhm @ 7A, 4.5V

2V @ 250µA

36nC @ 10V

1255pF @ 15V

3.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MP6K31TR

Rohm Semiconductor

MOSFET 2N-CH 60V 2A MPT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 290 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: MPT6

封装: 6-SMD, Flat Leads

库存7,808

Logic Level Gate

60V

2A

290 mOhm @ 2A, 10V

2.5V @ 1mA

2nC @ 5V

110pF @ 10V

2W

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

MPT6

CSD75205W1015

Texas Instruments

MOSFET 2P-CH 20V 1.2A 6DSBGA

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 10V
Power - Max: 750mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA, DSBGA
Supplier Device Package: 6-DSBGA (1x1.5)

封装: 6-UFBGA, DSBGA

库存17,808

Logic Level Gate

20V

1.2A

120 mOhm @ 1A, 4.5V

850mV @ 250µA

2.2nC @ 4.5V

265pF @ 10V

750mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFBGA, DSBGA

6-DSBGA (1x1.5)

SI1988DH-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 1.3A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 168 mOhm @ 1.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

封装: 6-TSSOP, SC-88, SOT-363

库存5,376

Logic Level Gate

20V

1.3A

168 mOhm @ 1.4A, 4.5V

1V @ 250µA

4.1nC @ 8V

110pF @ 10V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

MMDF2N02ER2

ON Semiconductor

MOSFET 2N-CH 25V 3.6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 532pF @ 16V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存884,412

Logic Level Gate

25V

3.6A

100 mOhm @ 2.2A, 10V

3V @ 250µA

30nC @ 10V

532pF @ 16V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IRF7316PBF

Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,696

Logic Level Gate

30V

4.9A

58 mOhm @ 4.9A, 10V

1V @ 250µA

34nC @ 10V

710pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BSL806NH6327XTSA1

Infineon Technologies

MOSFET N-CH TSOP6-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V
Vgs(th) (Max) @ Id: 750mV @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

封装: SOT-23-6 Thin, TSOT-23-6

库存3,488

Logic Level Gate, 1.8V Drive

20V

2.3A (Ta)

57 mOhm @ 2.3A, 2.5V

750mV @ 11µA

1.7nC @ 2.5V

259pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

FMM50-025TF

IXYS

MOSFET 2N-CH 250V 30A I4-PAC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Power - Max: 125W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5
Supplier Device Package: ISOPLUS i4-PAC?

封装: i4-Pac?-5

库存4,960

Standard

250V

30A

50 mOhm @ 25A, 10V

4.5V @ 250µA

78nC @ 10V

4000pF @ 25V

125W

-55°C ~ 150°C (TJ)

Through Hole

i4-Pac?-5

ISOPLUS i4-PAC?

ALD110808PCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

FET Type: 4 N-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

封装: 16-DIP (0.300", 7.62mm)

库存6,880

Standard

10.6V

12mA, 3mA

500 Ohm @ 4.8V

820mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

SI7540DP-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 12V 7.6A PPAK SO-8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 5.7A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存4,432

Logic Level Gate

12V

7.6A, 5.7A

17 mOhm @ 11.8A, 4.5V

1.5V @ 250µA

17nC @ 4.5V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

CSD87352Q5D

Texas Instruments

MOSFET 2N-CH 30V 25A 8SON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V
Power - Max: 8.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-LSON (5x6)

封装: 8-PowerLDFN

库存29,172

Logic Level Gate

30V

25A

-

1.15V @ 250µA

12.5nC @ 4.5V

1800pF @ 15V

8.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

8-LSON (5x6)

SIZ300DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 11A POWERPAIR

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A, 28A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Power - Max: 16.7W, 31W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair?

封装: 8-PowerWDFN

库存15,360

Logic Level Gate

30V

11A, 28A

24 mOhm @ 9.8A, 10V

2.4V @ 250µA

12nC @ 10V

400pF @ 15V

16.7W, 31W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair?

FDMS3602AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 15A/26A POWER56

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 15A, 26A
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 13V
Power - Max: 2.2W, 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

封装: 8-PowerTDFN

库存48,240

Logic Level Gate

25V

15A, 26A

5.6 mOhm @ 15A, 10V

3V @ 250µA

27nC @ 10V

1770pF @ 13V

2.2W, 2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

SI9933CDY-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 4A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V
Power - Max: 3.1W
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存62,304

Logic Level Gate

20V

4A

58 mOhm @ 4.8A, 4.5V

1.4V @ 250µA

26nC @ 10V

665pF @ 10V

3.1W

-50°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI7998DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 25A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A, 30A
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Power - Max: 22W, 40W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存6,108

Logic Level Gate

30V

25A, 30A

9.3 mOhm @ 15A, 10V

2.5V @ 250µA

26nC @ 10V

1100pF @ 15V

22W, 40W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

BUK9K134-100EX

Nexperia USA Inc.

MOSFET 2N-CH 100V 8.5A 56LFPAK

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Rds On (Max) @ Id, Vgs: 159 mOhm @ 5A, 5V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
Power - Max: 32W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封装: SOT-1205, 8-LFPAK56

库存25,836

Logic Level Gate

100V

8.5A

159 mOhm @ 5A, 5V

2.1V @ 1mA

7.4nC @ 5V

755pF @ 25V

32W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

PHC2300,118

Nexperia USA Inc.

MOSFET N/P-CH 300V 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 340mA, 235mA
Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 102pF @ 50V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存15,012

Logic Level Gate

300V

340mA, 235mA

6 Ohm @ 170mA, 10V

2V @ 1mA

6.24nC @ 10V

102pF @ 50V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

2N7002BKS,115

Nexperia USA Inc.

MOSFET 2N-CH 60V 0.3A 6TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 295mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封装: 6-TSSOP, SC-88, SOT-363

库存151,056

Logic Level Gate

60V

300mA

1.6 Ohm @ 500mA, 10V

2.1V @ 250µA

0.6nC @ 4.5V

50pF @ 10V

295mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

SI1026X-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 0.305A SC89-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

封装: SOT-563, SOT-666

库存1,139,760

Logic Level Gate

60V

305mA

1.4 Ohm @ 500mA, 10V

2.5V @ 250µA

0.6nC @ 4.5V

30pF @ 25V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

NTE2960

NTE Electronics, Inc

MOSFET 2N-CH 900V 7A TO220

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V
Power - Max: 40W
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack

封装: -

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-

900V

7A

2Ohm @ 3A, 10V

4V @ 1mA

-

1380pF @ 25V

40W

-55°C ~ 150°C

Through Hole

TO-220-3 Full Pack

TO-220 Full Pack

IPG20N04S4L18AATMA1

Infineon Technologies

MOSFET 2N-CH 40V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 8µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1071pF @ 25V
Power - Max: 26W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

封装: -

库存14,310

-

40V

20A (Tc)

18mOhm @ 17A, 10V

2.2V @ 8µA

15nC @ 10V

1071pF @ 25V

26W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerVDFN

PG-TDSON-8-10

DMC2053UFDBQ-7

Diodes Incorporated

MOSFET N/P-CH 20V 4.6A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V, 12.7nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V
Power - Max: 820mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: -

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-

20V

4.6A (Ta), 3.1A (Ta)

35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V

1V @ 250µA

7.7nC @ 10V, 12.7nC @ 8V

369pF @ 10V, 440pF @ 10V

820mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

UPA2561T1H-T1-AT

Renesas Electronics Corporation

MOSFET 2N-CH 20V 4.5A 8VSOF

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
Power - Max: 2.2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-VSOF

封装: -

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Logic Level Gate

20V

4.5A

50mOhm @ 2A, 4.5V

1.5V @ 1mA

5.4nC @ 4.5V

455pF @ 10V

2.2W

-

Surface Mount

8-SMD, Flat Lead

8-VSOF

FDD8424H-F085A

onsemi

MOSFET N/P-CH 40V 9A/6.5A TO252

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252 (DPAK)

封装: -

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Logic Level Gate

40V

9A, 6.5A

24mOhm @ 9A, 10V

3V @ 250µA

20nC @ 10V

1000pF @ 20V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-5, DPAK (4 Leads + Tab), TO-252AD

TO-252 (DPAK)

DMN62D2UDM-7

Diodes Incorporated

2N7002 FAMILY SOT26 T&R 3K

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

封装: -

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-

60V

440mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

0.8nC @ 4.5V

41pF @ 30V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-26

NVMJD7D4N04CLTWG

onsemi

MOSFET N-CH 40V LFPAK56

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

SIZ346DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 17A/30A 8PWR33

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
Power - Max: 16W, 16.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

封装: -

库存11,772

-

30V

17A (Tc), 30A (Tc)

28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V

2.2V @ 250µA, 2.4V @ 250µA

5nC @ 4.5V, 9nC @ 4.5V

325pF @ 15V, 650pF @ 15V

16W, 16.7W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

BUK9MHH-65PNN-518

Nexperia USA Inc.

MOSFET 2N-CH 65V 15A 20SO

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 44.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3643pF @ 25V
Power - Max: 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 20-SO

封装: -

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Logic Level Gate

65V

15A (Tc)

10.6mOhm @ 10A, 10V

2V @ 1mA

44.6nC @ 5V

3643pF @ 25V

5W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

20-SOIC (0.295", 7.50mm Width)

20-SO

XP4509AGM

YAGEO XSEMI

MOSFET N AND P-CH 30V 11.2A 8A

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 8A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V, 21mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V, 2000pF @ 25V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC
Supplier Device Package: 8-SO

封装: -

库存2,970

-

30V

11.2A (Ta), 8A (Ta)

10mOhm @ 10A, 10V, 21mOhm @ 7A, 10V

3V @ 250µA

19.2nC @ 4.5V

1140pF @ 25V, 2000pF @ 25V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC

8-SO