页 145 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SI4816DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 5.3A 8-SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W, 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存147,948	Logic Level Gate	30V	5.3A, 7.7A	22 mOhm @ 6.3A, 10V	2V @ 250µA	12nC @ 5V	-	1W, 1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
VEC2415-TL-E	ON Semiconductor	MOSFET 2N-CH 60V 3A VEC8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-VEC	封装: 8-SMD, Flat Lead	库存4,464	Logic Level Gate	60V	3A	80 mOhm @ 1.5A, 10V	2.6V @ 1mA	10nC @ 10V	505pF @ 20V	1W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-VEC
SI6969DQ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存72,000	Logic Level Gate	12V	-	34 mOhm @ 4.6A, 4.5V	450mV @ 250µA (Min)	40nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SIA913DJ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 4.5A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V Power - Max: 6.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	封装: PowerPAK? SC-70-6 Dual	库存32,400	Standard	12V	4.5A	70 mOhm @ 3.3A, 4.5V	1V @ 250µA	12nC @ 8V	400pF @ 6V	6.5W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
SI5933DC-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 2.7A 1206-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	封装: 8-SMD, Flat Lead	库存5,265,276	Logic Level Gate	20V	2.7A	110 mOhm @ 2.7A, 4.5V	1V @ 250µA	7.7nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
TPC8207(TE12L,Q)	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 6A 8-SOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 20 mOhm @ 4.8A, 4V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V Power - Max: 450mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0)	封装: 8-SOIC (0.173", 4.40mm Width)	库存2,704	Logic Level Gate	20V	6A	20 mOhm @ 4.8A, 4V	1.2V @ 200µA	22nC @ 5V	2010pF @ 10V	450mW	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP (5.5x6.0)
APTM100DUM90G	Microsemi Corporation	MOSFET 2N-CH 1000V 78A SP6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 78A Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	封装: SP6	库存2,688	Standard	1000V (1kV)	78A	105 mOhm @ 39A, 10V	5V @ 10mA	744nC @ 10V	20700pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM100DDA35T3G	Microsemi Corporation	MOSFET 2N-CH 1000V 22A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 22A Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封装: SP3	库存5,488	Standard	1000V (1kV)	22A	420 mOhm @ 11A, 10V	5V @ 2.5mA	186nC @ 10V	5200pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
DMN3016LDV-7	Diodes Incorporated	MOSFET BVDSS: 25V 30V POWERDI333 FET Type: 2 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8	封装: 8-PowerVDFN	库存2,624	Standard	-	21A (Tc)	12 mOhm @ 7A, 10V	2V @ 250µA	9.5nC @ 4.5V	1184pF @ 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8
DMN63D8LDW-13	Diodes Incorporated	MOSFET 2N-CH 30V 0.22A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 870nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存6,384	Logic Level Gate	30V	220mA	2.8 Ohm @ 250mA, 10V	1.5V @ 250µA	870nC @ 10V	22pF @ 25V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
CSD87334Q3DT	Texas Instruments	MOSFET 2N-CH 30V 20A 8SON FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 6 mOhm @ 12A, 8V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Power - Max: 6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON (3.3x3.3)	封装: 8-PowerTDFN	库存5,600	Standard	30V	-	6 mOhm @ 12A, 8V	1.2V @ 250µA	8.3nC @ 4.5V	1260pF @ 15V	6W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-VSON (3.3x3.3)
ALD111933SAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.9V Vgs(th) (Max) @ Id: 3.35V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存13,740	Standard	10.6V	-	500 Ohm @ 5.9V	3.35V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NX3020NAKS,115	Nexperia USA Inc.	MOSFET 2N-CH 30V 0.18A 6TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 180mA Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Power - Max: 375mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封装: 6-TSSOP, SC-88, SOT-363	库存6,496	Logic Level Gate	30V	180mA	4.5 Ohm @ 100mA, 10V	1.5V @ 250µA	0.44nC @ 4.5V	13pF @ 10V	375mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
SI4948BEY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 60V 2.4A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存61,188	Logic Level Gate	60V	2.4A	120 mOhm @ 3.1A, 10V	3V @ 250µA	22nC @ 10V	-	1.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMC8200	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 8A/12A POWER33 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 12A Rds On (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Power - Max: 700mW, 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	封装: 8-PowerWDFN	库存121,020	Logic Level Gate	30V	8A, 12A	20 mOhm @ 6A, 10V	3V @ 250µA	10nC @ 10V	660pF @ 15V	700mW, 900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
TT8J13TCR	Rohm Semiconductor	MOSFET 2P-CH 12V 2.5A TSST8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 62 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 6V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-TSST	封装: 8-SMD, Flat Lead	库存4,672	Logic Level Gate, 1.5V Drive	12V	2.5A	62 mOhm @ 2.5A, 4.5V	1V @ 1mA	16nC @ 4.5V	2000pF @ 6V	1W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-TSST
DMN1150UFL3-7	Diodes Incorporated	MOSFET 2N-CHA 12V 2A DFN1310 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 150 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V Power - Max: 390mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存4,752	Standard	12V	2A	150 mOhm @ 1A, 4.5V	1V @ 250µA	1.4nC @ 4.5V	115pF @ 6V	390mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO8807	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 12V 6.5A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6.5A Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 6V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存22,980	Logic Level Gate	12V	6.5A	20 mOhm @ 6.5A, 4.5V	850mV @ 250µA	23nC @ 4.5V	2100pF @ 6V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI4904DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 40V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V Power - Max: 3.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存74,268	Standard	40V	8A	16 mOhm @ 5A, 10V	2V @ 250µA	85nC @ 10V	2390pF @ 20V	3.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SQJB70EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 100V 11.3A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封装: -	库存7,674	-	100V	11.3A (Tc)	95mOhm @ 4A, 10V	3.5V @ 250µA	7nC @ 10V	220pF @ 25V	27W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SH8KA4TB1	Rohm Semiconductor	MOSFET 2N-CH 30V 9A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存7,245	-	30V	9A (Ta)	21.4mOhm @ 9A, 10V	2.5V @ 1mA	15.5nC @ 10V	640pF @ 15V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
NVMFD5C446NWFT1G	onsemi	MOSFET 2N-CH 40V 24A/127A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 127A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V Power - Max: 3.2W (Ta), 89W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封装: -	Request a Quote	-	40V	24A (Ta), 127A (Tc)	2.9mOhm @ 30A, 10V	3.5V @ 250µA	38nC @ 10V	2450pF @ 25V	3.2W (Ta), 89W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
ECH8654-TL-HX	onsemi	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN2046UVT-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 10V Power - Max: 590mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	Request a Quote	-	20V	2.6A (Ta)	90mOhm @ 3.6A, 4.5V	1.4V @ 250µA	7.4nC @ 10V	278pF @ 10V	590mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
UPA2562T1H-T1-AT	Renesas Electronics Corporation	MOSFET 2N-CH 30V 4.5A 8VSOF FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 10V Power - Max: 2.2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-VSOF	封装: -	Request a Quote	Logic Level Gate	30V	4.5A	55mOhm @ 2A, 4.5V	1.5V @ 1mA	5.4nC @ 4.5V	475pF @ 10V	2.2W	-	Surface Mount	8-SMD, Flat Lead	8-VSOF
SP8M3FD5TB1	Rohm Semiconductor	MOSFET N/P-CH 30V 8SOP FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
TSM500P02DCQ	Taiwan Semiconductor Corporation	MOSFET 2P-CH 20V 4.7A 6TDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 0.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V Power - Max: 620mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-TDFN (2x2)	封装: -	Request a Quote	-	20V	4.7A (Tc)	50mOhm @ 3A, 4.5V	0.8V @ 250µA	13nC @ 4.5V	1230pF @ 10V	620mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-TDFN (2x2)
FDS8958A-F085	onsemi	MOSFET N/P-CH 30V 7A/5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 5A Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	Logic Level Gate	30V	7A, 5A	28mOhm @ 7A, 10V	3V @ 250µA	16nC @ 10V	575pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MCGD30P02-TP	Micro Commercial Co	MOSFET 2P-CH 20V 30A DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2992pF @ 10V Power - Max: 21W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: DFN3333-D	封装: -	库存29,760	-	20V	30A (Ta)	19mOhm @ 15A, 4.5V	1V @ 250µA	72.8nC @ 10V	2992pF @ 10V	21W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	DFN3333-D
SP8J66FRATB	Rohm Semiconductor	MOSFET 2P-CH 9A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	-	-	9A (Ta)	18.5mOhm @ 9A, 10V	2.5V @ 1mA	-	-	-	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP

SI4816DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 5.3A 8-SOIC

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W, 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存147,948

Logic Level Gate

30V

5.3A, 7.7A

22 mOhm @ 6.3A, 10V

2V @ 250µA

12nC @ 5V

-

1W, 1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

VEC2415-TL-E

ON Semiconductor

MOSFET 2N-CH 60V 3A VEC8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-VEC

封装: 8-SMD, Flat Lead

库存4,464

Logic Level Gate

60V

3A

80 mOhm @ 1.5A, 10V

2.6V @ 1mA

10nC @ 10V

505pF @ 20V

1W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-VEC

SI6969DQ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存72,000

Logic Level Gate

12V

-

34 mOhm @ 4.6A, 4.5V

450mV @ 250µA (Min)

40nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SIA913DJ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 4.5A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

封装: PowerPAK? SC-70-6 Dual

库存32,400

Standard

12V

4.5A

70 mOhm @ 3.3A, 4.5V

1V @ 250µA

12nC @ 8V

400pF @ 6V

6.5W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

SI5933DC-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 2.7A 1206-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

封装: 8-SMD, Flat Lead

库存5,265,276

Logic Level Gate

20V

2.7A

110 mOhm @ 2.7A, 4.5V

1V @ 250µA

7.7nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

TPC8207(TE12L,Q)

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 6A 8-SOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 4.8A, 4V
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V
Power - Max: 450mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP (5.5x6.0)

封装: 8-SOIC (0.173", 4.40mm Width)

库存2,704

Logic Level Gate

20V

6A

20 mOhm @ 4.8A, 4V

1.2V @ 200µA

22nC @ 5V

2010pF @ 10V

450mW

150°C (TJ)

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP (5.5x6.0)

APTM100DUM90G

Microsemi Corporation

MOSFET 2N-CH 1000V 78A SP6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 78A
Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

封装: SP6

库存2,688

Standard

1000V (1kV)

78A

105 mOhm @ 39A, 10V

5V @ 10mA

744nC @ 10V

20700pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM100DDA35T3G

Microsemi Corporation

MOSFET 2N-CH 1000V 22A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封装: SP3

库存5,488

Standard

1000V (1kV)

22A

420 mOhm @ 11A, 10V

5V @ 2.5mA

186nC @ 10V

5200pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

DMN3016LDV-7

Diodes Incorporated

MOSFET BVDSS: 25V 30V POWERDI333

FET Type: 2 N-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8

封装: 8-PowerVDFN

库存2,624

Standard

-

21A (Tc)

12 mOhm @ 7A, 10V

2V @ 250µA

9.5nC @ 4.5V

1184pF @ 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8

DMN63D8LDW-13

Diodes Incorporated

MOSFET 2N-CH 30V 0.22A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA
Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 870nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存6,384

Logic Level Gate

30V

220mA

2.8 Ohm @ 250mA, 10V

1.5V @ 250µA

870nC @ 10V

22pF @ 25V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

CSD87334Q3DT

Texas Instruments

MOSFET 2N-CH 30V 20A 8SON

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 6 mOhm @ 12A, 8V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Power - Max: 6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-VSON (3.3x3.3)

封装: 8-PowerTDFN

库存5,600

Standard

30V

-

6 mOhm @ 12A, 8V

1.2V @ 250µA

8.3nC @ 4.5V

1260pF @ 15V

6W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-VSON (3.3x3.3)

ALD111933SAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 500 Ohm @ 5.9V
Vgs(th) (Max) @ Id: 3.35V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存13,740

Standard

10.6V

-

500 Ohm @ 5.9V

3.35V @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NX3020NAKS,115

Nexperia USA Inc.

MOSFET 2N-CH 30V 0.18A 6TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 180mA
Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Power - Max: 375mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封装: 6-TSSOP, SC-88, SOT-363

库存6,496

Logic Level Gate

30V

180mA

4.5 Ohm @ 100mA, 10V

1.5V @ 250µA

0.44nC @ 4.5V

13pF @ 10V

375mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

SI4948BEY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 60V 2.4A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存61,188

Logic Level Gate

60V

2.4A

120 mOhm @ 3.1A, 10V

3V @ 250µA

22nC @ 10V

-

1.4W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMC8200

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 8A/12A POWER33

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 12A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Power - Max: 700mW, 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

封装: 8-PowerWDFN

库存121,020

Logic Level Gate

30V

8A, 12A

20 mOhm @ 6A, 10V

3V @ 250µA

10nC @ 10V

660pF @ 15V

700mW, 900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

TT8J13TCR

Rohm Semiconductor

MOSFET 2P-CH 12V 2.5A TSST8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 62 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 6V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-TSST

封装: 8-SMD, Flat Lead

库存4,672

Logic Level Gate, 1.5V Drive

12V

2.5A

62 mOhm @ 2.5A, 4.5V

1V @ 1mA

16nC @ 4.5V

2000pF @ 6V

1W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-TSST

DMN1150UFL3-7

Diodes Incorporated

MOSFET 2N-CHA 12V 2A DFN1310

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V
Power - Max: 390mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,752

Standard

12V

2A

150 mOhm @ 1A, 4.5V

1V @ 250µA

1.4nC @ 4.5V

115pF @ 6V

390mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AO8807

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 12V 6.5A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 6V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存22,980

Logic Level Gate

12V

6.5A

20 mOhm @ 6.5A, 4.5V

850mV @ 250µA

23nC @ 4.5V

2100pF @ 6V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI4904DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 40V 8A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Power - Max: 3.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存74,268

Standard

40V

8A

16 mOhm @ 5A, 10V

2V @ 250µA

85nC @ 10V

2390pF @ 20V

3.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SQJB70EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 100V 11.3A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封装: -

库存7,674

-

100V

11.3A (Tc)

95mOhm @ 4A, 10V

3.5V @ 250µA

7nC @ 10V

220pF @ 25V

27W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SH8KA4TB1

Rohm Semiconductor

MOSFET 2N-CH 30V 9A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存7,245

-

30V

9A (Ta)

21.4mOhm @ 9A, 10V

2.5V @ 1mA

15.5nC @ 10V

640pF @ 15V

2W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

NVMFD5C446NWFT1G

onsemi

MOSFET 2N-CH 40V 24A/127A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V
Power - Max: 3.2W (Ta), 89W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封装: -

Request a Quote

-

40V

24A (Ta), 127A (Tc)

2.9mOhm @ 30A, 10V

3.5V @ 250µA

38nC @ 10V

2450pF @ 25V

3.2W (Ta), 89W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

ECH8654-TL-HX

onsemi

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

DMN2046UVT-7

Diodes Incorporated

MOSFET BVDSS: 8V~24V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 10V
Power - Max: 590mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

Request a Quote

-

20V

2.6A (Ta)

90mOhm @ 3.6A, 4.5V

1.4V @ 250µA

7.4nC @ 10V

278pF @ 10V

590mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

UPA2562T1H-T1-AT

Renesas Electronics Corporation

MOSFET 2N-CH 30V 4.5A 8VSOF

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 10V
Power - Max: 2.2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-VSOF

封装: -

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Logic Level Gate

30V

4.5A

55mOhm @ 2A, 4.5V

1.5V @ 1mA

5.4nC @ 4.5V

475pF @ 10V

2.2W

-

Surface Mount

8-SMD, Flat Lead

8-VSOF

SP8M3FD5TB1

Rohm Semiconductor

MOSFET N/P-CH 30V 8SOP

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

TSM500P02DCQ

Taiwan Semiconductor Corporation

MOSFET 2P-CH 20V 4.7A 6TDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 0.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 10V
Power - Max: 620mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-TDFN (2x2)

封装: -

Request a Quote

-

20V

4.7A (Tc)

50mOhm @ 3A, 4.5V

0.8V @ 250µA

13nC @ 4.5V

1230pF @ 10V

620mW (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-TDFN (2x2)

FDS8958A-F085

onsemi

MOSFET N/P-CH 30V 7A/5A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5A
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

Request a Quote

Logic Level Gate

30V

7A, 5A

28mOhm @ 7A, 10V

3V @ 250µA

16nC @ 10V

575pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MCGD30P02-TP

Micro Commercial Co

MOSFET 2P-CH 20V 30A DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2992pF @ 10V
Power - Max: 21W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: DFN3333-D

封装: -

库存29,760

-

20V

30A (Ta)

19mOhm @ 15A, 4.5V

1V @ 250µA

72.8nC @ 10V

2992pF @ 10V

21W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

DFN3333-D

SP8J66FRATB

Rohm Semiconductor

MOSFET 2P-CH 9A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

Request a Quote

-

9A (Ta)

18.5mOhm @ 9A, 10V

2.5V @ 1mA

-

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP