页 133 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AO6801E	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 2A 6TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 110 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	封装: SC-74, SOT-457	库存120,012	Logic Level Gate	30V	2A	110 mOhm @ 2A, 10V	1.5V @ 250µA	12nC @ 10V	305pF @ 15V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
SI5935DC-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 3A 1206-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 86 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	封装: 8-SMD, Flat Lead	库存36,000	Logic Level Gate	20V	3A	86 mOhm @ 3A, 4.5V	1V @ 250µA	8.5nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
SI4967DY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,856	Logic Level Gate	12V	-	23 mOhm @ 7.5A, 4.5V	450mV @ 250µA (Min)	55nC @ 10V	-	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI1563EDH-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 1.13A SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 570mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	封装: 6-TSSOP, SC-88, SOT-363	库存36,120	Logic Level Gate	20V	1.13A, 880mA	280 mOhm @ 1.13A, 4.5V	1V @ 100µA	1nC @ 4.5V	-	570mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
SI1563DH-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 1.13A SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 570mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	封装: 6-TSSOP, SC-88, SOT-363	库存259,200	Logic Level Gate	20V	1.13A, 880mA	280 mOhm @ 1.13A, 4.5V	1V @ 100µA	2nC @ 4.5V	-	570mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
HAT2038R-EL-E	Renesas Electronics America	MOSFET 2N-CH 60V 5A 8SOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 58 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 3W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存18,768	Logic Level Gate	60V	5A	58 mOhm @ 3A, 10V	2.2V @ 1mA	-	520pF @ 10V	3W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
ALD210814SCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 0.08A 16SOIC FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封装: 16-SOIC (0.154", 3.90mm Width)	库存7,216	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	-	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
AON6932A	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 22A/36A 8DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A, 36A Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1037pF @ 15V Power - Max: 3.6W, 4.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (5x6)	封装: 8-PowerVDFN	库存31,224	Logic Level Gate	30V	22A, 36A	5 mOhm @ 20A, 10V	2.2V @ 250µA	22nC @ 10V	1037pF @ 15V	3.6W, 4.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (5x6)
IRF9362TRPBF	Infineon Technologies	MOSFET 2P-CH 30V 8A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存369,960	Logic Level Gate	30V	8A	21 mOhm @ 8A, 10V	2.4V @ 25µA	39nC @ 10V	1300pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7309TRPBF	Infineon Technologies	MOSFET N/P-CH 30V 4A/3A 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存460,920	Standard	30V	4A, 3A	50 mOhm @ 2.4A, 10V	1V @ 250µA	25nC @ 4.5V	520pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTHD3100CT1G	ON Semiconductor	MOSFET N/P-CH 20V CHIPFET FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A, 3.2A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	封装: 8-SMD, Flat Lead	库存32,040	Logic Level Gate	20V	2.9A, 3.2A	80 mOhm @ 2.9A, 4.5V	1.2V @ 250µA	2.3nC @ 4.5V	165pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
ZXMHN6A07T8TA	Diodes Incorporated	MOSFET 4N-CH 60V 1.4A SM8 FET Type: 4 N-Channel (H-Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.4A Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SM8	封装: SOT-223-8	库存46,800	Logic Level Gate	60V	1.4A	300 mOhm @ 1.8A, 10V	3V @ 250µA	3.2nC @ 10V	166pF @ 40V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SM8
SQJ990EP-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 100V SO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 6A, 10V, 19 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V, 650pF @ 25V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric	封装: PowerPAK? SO-8 Dual	库存7,200	Standard	100V	34A (Tc)	40 mOhm @ 6A, 10V, 19 mOhm @ 10A, 10V	2.5V @ 250µA	30nC @ 10V, 15nC @ 10V	1390pF @ 25V, 650pF @ 25V	48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual Asymmetric
CMRDM3575 TR	Central Semiconductor Corp	MOSFET N/P-CH 20V SOT963 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 160mA, 140mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.46nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V Power - Max: 125mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	封装: SOT-963	库存5,856	Logic Level Gate	20V	160mA, 140mA	3 Ohm @ 100mA, 4.5V	1V @ 250µA	0.46nC @ 4.5V	9pF @ 15V	125mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
NTJD5121NT2G	ON Semiconductor	MOSFET 2N-CH 60V 0.295A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 295mA Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存108,012	Logic Level Gate	60V	295mA	1.6 Ohm @ 500mA, 10V	2.5V @ 250µA	0.9nC @ 4.5V	26pF @ 20V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
MCH6661-TL-W	ON Semiconductor	MOSFET 2N-CH 30V 1.8A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.8A Rds On (Max) @ Id, Vgs: 188 mOhm @ 900mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V Power - Max: 800mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: SC-88FL/ MCPH6	封装: 6-SMD, Flat Leads	库存21,666	Logic Level Gate, 4V Drive	30V	1.8A	188 mOhm @ 900mA, 10V	2.6V @ 1mA	2nC @ 10V	88pF @ 10V	800mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	SC-88FL/ MCPH6
CMLDM7003T TR	Central Semiconductor Corp	MOSFET 2N-CH 50V 0.28A SOT563 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: SOT-563, SOT-666	库存26,004	Standard	50V	280mA	1.5 Ohm @ 50mA, 5V	1.2V @ 250µA	0.76nC @ 4.5V	50pF @ 25V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
FDMA1024NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 5A 6-MICROFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 54 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	封装: 6-VDFN Exposed Pad	库存260,232	Logic Level Gate	20V	5A	54 mOhm @ 5A, 4.5V	1V @ 250µA	7.3nC @ 4.5V	500pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-MicroFET (2x2)
HUFA75321D3STQ	Fairchild Semiconductor	MOSFET N-CH 55V 20A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SSM6N44FU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 0.1A US6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V Power - Max: 200mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: -	库存43,383	-	30V	100mA (Ta)	4Ohm @ 10mA, 4V	1.5V @ 100µA	-	8.5pF @ 3V	200mW (Ta)	150°C	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
AONP36320	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 26A/100A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc), 27A (Ta), 103A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V, 3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V, 1650pF @ 15V Power - Max: 3.3W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN-EP (3.3x3.3)	封装: -	Request a Quote	-	30V	26A (Ta), 100A (Tc), 27A (Ta), 103A (Tc)	3.2mOhm @ 20A, 10V, 3mOhm @ 20A, 10V	2.1V @ 250µA	40nC @ 10V	1700pF @ 15V, 1650pF @ 15V	3.3W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN-EP (3.3x3.3)
SSF2219Y	Good-Ark Semiconductor	MOSFET 2P-CH 20V 0.4A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V Power - Max: 312mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	库存18,000	-	20V	400mA (Tc)	600mOhm @ 300mA, 4.5V	1V @ 250µA	2nC @ 4.5V	78pF @ 10V	312mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
FF6MR12W2M1HB11BPSA1	Infineon Technologies	SIC 2N-CH 1200V 145A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 145A (Tj) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 150A, 18V Vgs(th) (Max) @ Id: 5.15V @ 60mA Gate Charge (Qg) (Max) @ Vgs: 446nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: -	库存87	-	1200V (1.2kV)	145A (Tj)	5.4mOhm @ 150A, 18V	5.15V @ 60mA	446nC @ 18V	13200pF @ 800V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	Module
GCMX020A120B2H1P	SemiQ	SIC 1200V 20M MOSFET FULL-BRIDGE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 4V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 222nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 800V Power - Max: 333W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	库存30	-	1200V (1.2kV)	102A (Tc)	28mOhm @ 50A, 20V	4V @ 20mA	222nC @ 20V	5600pF @ 800V	333W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
SI1539CDL-T1-BE3	Vishay Siliconix	MOSFET N/P-CH 30V 0.7A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V, 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 34pF @ 15V Power - Max: 290mW (Ta), 340mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	封装: -	Request a Quote	-	30V	700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)	388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V	2.5V @ 250µA	1.5nC @ 10V, 3nC @ 10V	28pF @ 15V, 34pF @ 15V	290mW (Ta), 340mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
DMC10H220LSD-13	Diodes Incorporated	MOSFET N/P-CH 100V 1.7A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V, 250mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V, 17.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 50V, 1030pF @ 50V Power - Max: 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: -	Request a Quote	-	100V	1.7A (Ta)	220mOhm @ 1.6A, 10V, 250mOhm @ 1A, 10V	3V @ 250µA	8.3nC @ 10V, 17.5nC @ 10V	340pF @ 50V, 1030pF @ 50V	1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
UPA603T-T2-A	Renesas Electronics Corporation	MOSFET 2P-CH 50V 0.1A SC59 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 60Ohm @ 10mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 5V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-59-6 Supplier Device Package: SC-59	封装: -	Request a Quote	-	50V	100mA	60Ohm @ 10mA, 10V	2.5V @ 1µA	-	17pF @ 5V	300mW	150°C (TJ)	Surface Mount	SC-59-6	SC-59
PSMN013-60HLX	Nexperia USA Inc.	MOSFET 2N-CH 60V 40A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V Power - Max: 64W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封装: -	库存4,770	-	60V	40A (Ta)	12.5mOhm @ 10A, 5V	2.1V @ 1mA	22.4nC @ 5V	2953pF @ 25V	64W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
2N7002DWK-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.261A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 261mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 330mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	库存8,982	-	60V	261mA (Ta)	3Ohm @ 200mA, 10V	2V @ 250µA	1.04nC @ 10V	41pF @ 30V	330mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
PJQ1820_R1_00001	Panjit International Inc.	MOSFET 2N-CH 20V 0.8A 6DFN FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Power - Max: 400mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Supplier Device Package: DFN1010-6L	封装: -	Request a Quote	-	20V	800mA (Ta)	300mOhm @ 500mA, 4.5V	1V @ 250µA	1.1nC @ 4.5V	46pF @ 10V	400mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN	DFN1010-6L

AO6801E

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 2A 6TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 110 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

封装: SC-74, SOT-457

库存120,012

Logic Level Gate

30V

2A

110 mOhm @ 2A, 10V

1.5V @ 250µA

12nC @ 10V

305pF @ 15V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

SI5935DC-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 3A 1206-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 86 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

封装: 8-SMD, Flat Lead

库存36,000

Logic Level Gate

20V

3A

86 mOhm @ 3A, 4.5V

1V @ 250µA

8.5nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

SI4967DY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,856

Logic Level Gate

12V

-

23 mOhm @ 7.5A, 4.5V

450mV @ 250µA (Min)

55nC @ 10V

-

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI1563EDH-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 1.13A SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 570mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

封装: 6-TSSOP, SC-88, SOT-363

库存36,120

Logic Level Gate

20V

1.13A, 880mA

280 mOhm @ 1.13A, 4.5V

1V @ 100µA

1nC @ 4.5V

-

570mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

SI1563DH-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 1.13A SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA
Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 570mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

封装: 6-TSSOP, SC-88, SOT-363

库存259,200

Logic Level Gate

20V

1.13A, 880mA

280 mOhm @ 1.13A, 4.5V

1V @ 100µA

2nC @ 4.5V

-

570mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

HAT2038R-EL-E

Renesas Electronics America

MOSFET 2N-CH 60V 5A 8SOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 58 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Power - Max: 3W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存18,768

Logic Level Gate

60V

5A

58 mOhm @ 3A, 10V

2.2V @ 1mA

-

520pF @ 10V

3W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

ALD210814SCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 0.08A 16SOIC

FET Type: 4 N-Channel, Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

封装: 16-SOIC (0.154", 3.90mm Width)

库存7,216

Logic Level Gate

10.6V

80mA

-

20mV @ 10µA

-

500mW

-

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

AON6932A

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 22A/36A 8DFN

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22A, 36A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1037pF @ 15V
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)

封装: 8-PowerVDFN

库存31,224

Logic Level Gate

30V

22A, 36A

5 mOhm @ 20A, 10V

2.2V @ 250µA

22nC @ 10V

1037pF @ 15V

3.6W, 4.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (5x6)

IRF9362TRPBF

Infineon Technologies

MOSFET 2P-CH 30V 8A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存369,960

Logic Level Gate

30V

8A

21 mOhm @ 8A, 10V

2.4V @ 25µA

39nC @ 10V

1300pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7309TRPBF

Infineon Technologies

MOSFET N/P-CH 30V 4A/3A 8SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存460,920

Standard

30V

4A, 3A

50 mOhm @ 2.4A, 10V

1V @ 250µA

25nC @ 4.5V

520pF @ 15V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTHD3100CT1G

ON Semiconductor

MOSFET N/P-CH 20V CHIPFET

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 3.2A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

封装: 8-SMD, Flat Lead

库存32,040

Logic Level Gate

20V

2.9A, 3.2A

80 mOhm @ 2.9A, 4.5V

1.2V @ 250µA

2.3nC @ 4.5V

165pF @ 10V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

ZXMHN6A07T8TA

Diodes Incorporated

MOSFET 4N-CH 60V 1.4A SM8

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.4A
Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8

封装: SOT-223-8

库存46,800

Logic Level Gate

60V

1.4A

300 mOhm @ 1.8A, 10V

3V @ 250µA

3.2nC @ 10V

166pF @ 40V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223-8

SM8

SQJ990EP-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 100V SO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 6A, 10V, 19 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V, 650pF @ 25V
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric

封装: PowerPAK? SO-8 Dual

库存7,200

Standard

100V

34A (Tc)

40 mOhm @ 6A, 10V, 19 mOhm @ 10A, 10V

2.5V @ 250µA

30nC @ 10V, 15nC @ 10V

1390pF @ 25V, 650pF @ 25V

48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

PowerPAK? SO-8 Dual Asymmetric

CMRDM3575 TR

Central Semiconductor Corp

MOSFET N/P-CH 20V SOT963

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 160mA, 140mA
Rds On (Max) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.46nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V
Power - Max: 125mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

封装: SOT-963

库存5,856

Logic Level Gate

20V

160mA, 140mA

3 Ohm @ 100mA, 4.5V

1V @ 250µA

0.46nC @ 4.5V

9pF @ 15V

125mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-963

NTJD5121NT2G

ON Semiconductor

MOSFET 2N-CH 60V 0.295A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存108,012

Logic Level Gate

60V

295mA

1.6 Ohm @ 500mA, 10V

2.5V @ 250µA

0.9nC @ 4.5V

26pF @ 20V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

MCH6661-TL-W

ON Semiconductor

MOSFET 2N-CH 30V 1.8A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 188 mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V
Power - Max: 800mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: SC-88FL/ MCPH6

封装: 6-SMD, Flat Leads

库存21,666

Logic Level Gate, 4V Drive

30V

1.8A

188 mOhm @ 900mA, 10V

2.6V @ 1mA

2nC @ 10V

88pF @ 10V

800mW

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

SC-88FL/ MCPH6

CMLDM7003T TR

Central Semiconductor Corp

MOSFET 2N-CH 50V 0.28A SOT563

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.76nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: SOT-563, SOT-666

库存26,004

Standard

50V

280mA

1.5 Ohm @ 50mA, 5V

1.2V @ 250µA

0.76nC @ 4.5V

50pF @ 25V

350mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

FDMA1024NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 5A 6-MICROFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 54 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)

封装: 6-VDFN Exposed Pad

库存260,232

Logic Level Gate

20V

5A

54 mOhm @ 5A, 4.5V

1V @ 250µA

7.3nC @ 4.5V

500pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-MicroFET (2x2)

HUFA75321D3STQ

Fairchild Semiconductor

MOSFET N-CH 55V 20A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

SSM6N44FU-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A US6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Power - Max: 200mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: -

库存43,383

-

30V

100mA (Ta)

4Ohm @ 10mA, 4V

1.5V @ 100µA

-

8.5pF @ 3V

200mW (Ta)

150°C

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

AONP36320

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 26A/100A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc), 27A (Ta), 103A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V, 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V, 1650pF @ 15V
Power - Max: 3.3W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN-EP (3.3x3.3)

封装: -

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-

30V

26A (Ta), 100A (Tc), 27A (Ta), 103A (Tc)

3.2mOhm @ 20A, 10V, 3mOhm @ 20A, 10V

2.1V @ 250µA

40nC @ 10V

1700pF @ 15V, 1650pF @ 15V

3.3W (Ta), 50W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN-EP (3.3x3.3)

SSF2219Y

Good-Ark Semiconductor

MOSFET 2P-CH 20V 0.4A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Power - Max: 312mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

库存18,000

-

20V

400mA (Tc)

600mOhm @ 300mA, 4.5V

1V @ 250µA

2nC @ 4.5V

78pF @ 10V

312mW (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

FF6MR12W2M1HB11BPSA1

Infineon Technologies

SIC 2N-CH 1200V 145A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 145A (Tj)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 150A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 60mA
Gate Charge (Qg) (Max) @ Vgs: 446nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: -

库存87

-

1200V (1.2kV)

145A (Tj)

5.4mOhm @ 150A, 18V

5.15V @ 60mA

446nC @ 18V

13200pF @ 800V

-

-40°C ~ 175°C (TJ)

Chassis Mount

Module

GCMX020A120B2H1P

SemiQ

SIC 1200V 20M MOSFET FULL-BRIDGE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 222nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 800V
Power - Max: 333W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

库存30

-

1200V (1.2kV)

102A (Tc)

28mOhm @ 50A, 20V

4V @ 20mA

222nC @ 20V

5600pF @ 800V

333W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

SI1539CDL-T1-BE3

Vishay Siliconix

MOSFET N/P-CH 30V 0.7A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V, 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 34pF @ 15V
Power - Max: 290mW (Ta), 340mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

封装: -

Request a Quote

-

30V

700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)

388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V

2.5V @ 250µA

1.5nC @ 10V, 3nC @ 10V

28pF @ 15V, 34pF @ 15V

290mW (Ta), 340mW (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

DMC10H220LSD-13

Diodes Incorporated

MOSFET N/P-CH 100V 1.7A 8SO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V, 250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V, 17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 50V, 1030pF @ 50V
Power - Max: 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: -

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-

100V

1.7A (Ta)

220mOhm @ 1.6A, 10V, 250mOhm @ 1A, 10V

3V @ 250µA

8.3nC @ 10V, 17.5nC @ 10V

340pF @ 50V, 1030pF @ 50V

1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

UPA603T-T2-A

Renesas Electronics Corporation

MOSFET 2P-CH 50V 0.1A SC59

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 60Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 5V
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-59-6
Supplier Device Package: SC-59

封装: -

Request a Quote

-

50V

100mA

60Ohm @ 10mA, 10V

2.5V @ 1µA

-

17pF @ 5V

300mW

150°C (TJ)

Surface Mount

SC-59-6

SC-59

PSMN013-60HLX

Nexperia USA Inc.

MOSFET 2N-CH 60V 40A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V
Power - Max: 64W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封装: -

库存4,770

-

60V

40A (Ta)

12.5mOhm @ 10A, 5V

2.1V @ 1mA

22.4nC @ 5V

2953pF @ 25V

64W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

2N7002DWK-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.261A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 261mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 330mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

库存8,982

-

60V

261mA (Ta)

3Ohm @ 200mA, 10V

2V @ 250µA

1.04nC @ 10V

41pF @ 30V

330mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

PJQ1820_R1_00001

Panjit International Inc.

MOSFET 2N-CH 20V 0.8A 6DFN

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Power - Max: 400mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Supplier Device Package: DFN1010-6L

封装: -

Request a Quote

-

20V

800mA (Ta)

300mOhm @ 500mA, 4.5V

1V @ 250µA

1.1nC @ 4.5V

46pF @ 10V

400mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN

DFN1010-6L