页 130 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AO4854L_102	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,464	Logic Level Gate	30V	8A	19 mOhm @ 8A, 10V	2.4V @ 250µA	18nC @ 10V	888pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ECH8662-TL-H	ON Semiconductor	MOSFET 2N-CH 40V 6.5A ECH8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.5A Rds On (Max) @ Id, Vgs: 30 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 20V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	封装: 8-SMD, Flat Lead	库存4,096	Logic Level Gate	40V	6.5A	30 mOhm @ 3.5A, 4.5V	-	12nC @ 4.5V	1130pF @ 20V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
FDW2502P	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 4.4A 8-TSSO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.4A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 10V Power - Max: 600mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存237,648	Logic Level Gate	20V	4.4A	35 mOhm @ 4.4A, 4.5V	1.5V @ 250µA	21nC @ 5V	1465pF @ 10V	600mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
STC5NF30V	STMicroelectronics	MOSFET 2N-CH 30V 5A 8-TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 31 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存125,676	Logic Level Gate	30V	5A	31 mOhm @ 2.5A, 4.5V	600mV @ 250µA	11.5nC @ 4.5V	460pF @ 15V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
APTC60TAM35PG	Microsemi Corporation	MOSFET 6N-CH 600V 72A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Power - Max: 416W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	封装: SP6	库存6,176	Standard	600V	72A	35 mOhm @ 72A, 10V	3.9V @ 5.4mA	518nC @ 10V	14000pF @ 25V	416W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
APTC60HM70T3G	Microsemi Corporation	MOSFET 4N-CH 600V 39A SP3 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封装: SP3	库存5,520	Standard	600V	39A	70 mOhm @ 39A, 10V	3.9V @ 2.7mA	259nC @ 10V	7000pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTM50DHM65T3G	Microsemi Corporation	MOSFET 2N-CH 500V 51A SP3 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 51A Rds On (Max) @ Id, Vgs: 78 mOhm @ 42A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封装: SP3	库存7,664	Standard	500V	51A	78 mOhm @ 42A, 10V	5V @ 2.5mA	340nC @ 10V	10800pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
AON3818	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 24V 8A FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 12V Power - Max: 2.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-DFN (2.9x2.3)	封装: 8-SMD, Flat Lead	库存5,040	Logic Level Gate	24V	8A	13.5 mOhm @ 8A, 4.5V	1.2V @ 250µA	15nC @ 4.5V	840pF @ 12V	2.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-DFN (2.9x2.3)
NTMD6N02R2G	ON Semiconductor	MOSFET 2N-CH 20V 3.92A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.92A Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V Power - Max: 730mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存534,024	Logic Level Gate	20V	3.92A	35 mOhm @ 6A, 4.5V	1.2V @ 250µA	20nC @ 4.5V	1100pF @ 16V	730mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
ZXMD63C03XTA	Diodes Incorporated	MOSFET N/P-CH 30V 8-MSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Power - Max: 1.04W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	库存1,954,092	Logic Level Gate	30V	-	135 mOhm @ 1.7A, 10V	1V @ 250µA (Min)	8nC @ 10V	290pF @ 25V	1.04W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
DMN2023UCB4-7	Diodes Incorporated	MOSFET 2N-CH X1-WLB1818-4 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.45W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLBGA Supplier Device Package: X1-WLB1818-4	封装: 4-XFBGA, WLBGA	库存6,528	Logic Level Gate	-	-	-	-	29nC @ 4.5V	-	1.45W	-55°C ~ 150°C (TJ)	Surface Mount	4-XFBGA, WLBGA	X1-WLB1818-4
ZXMP6A16DN8TA	Diodes Incorporated	MOSFET 2P-CH 60V 2.9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V Power - Max: 1.81W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存512,964	Logic Level Gate	60V	2.9A	85 mOhm @ 2.9A, 10V	1V @ 250µA (Min)	24.2nC @ 10V	1021pF @ 30V	1.81W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FDMB2307NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 6-MLP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-MLP (2x3)	封装: 6-WDFN Exposed Pad	库存158,748	Logic Level Gate	-	-	-	-	28nC @ 5V	-	800mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-MLP (2x3)
DMN2016LFG-7	Diodes Incorporated	MOSFET 2N-CH 20V 5.2A 8UDFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1472pF @ 10V Power - Max: 770mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Supplier Device Package: U-DFN3030-8	封装: 8-PowerUDFN	库存25,908	Logic Level Gate	20V	5.2A	18 mOhm @ 6A, 4.5V	1.1V @ 250µA	16nC @ 4.5V	1472pF @ 10V	770mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerUDFN	U-DFN3030-8
MSCSM120AM02T6LIAG	Microchip Technology	SIC 2N-CH 1200V 947A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 947A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V Vgs(th) (Max) @ Id: 2.8V @ 36mA Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V Power - Max: 3.75kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	947A (Tc)	2.6mOhm @ 480A, 20V	2.8V @ 36mA	2784nC @ 20V	36200pF @ 1000V	3.75kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
DMT32M6LDG-13	Diodes Incorporated	MOSFET 2N-CH 30V 21A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 2.2V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V Power - Max: 1.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type G)	封装: -	库存8,970	-	30V	21A (Ta), 47A (Tc)	2.5mOhm @ 18A, 10V	2.2V @ 400µA	15.6nC @ 4.5V	2101pF @ 15V	1.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type G)
APTMC120HRM40CT3AG	Microchip Technology	SIC 2N-CH 1200V 73A SP3 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 3V @ 12.5mA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V Power - Max: 375W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3	封装: -	Request a Quote	-	1200V (1.2kV)	73A (Tc)	34mOhm @ 50A, 20V	3V @ 12.5mA	161nC @ 5V	2788pF @ 1000V	375W	-40°C ~ 150°C (TJ)	Chassis Mount	Module	SP3
IRF7307QTRPBF	Infineon Technologies	MOSFET N/P-CH 20V 5.2A/4.3A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: -	Request a Quote	Logic Level Gate	20V	5.2A, 4.3A	50mOhm @ 2.6A, 4.5V	700mV @ 250µA	20nC @ 4.5V	660pF @ 15V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
G170P02D32	Goford Semiconductor	MOSFET P+P-CH 20V 20A 15W DFN3*3 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2193pF @ 10V Power - Max: 15W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (3.15x3.05) Dual	封装: -	库存15,000	-	20V	20A (Tc)	21mOhm @ 6A, 4.5V	1V @ 250µA	30nC @ 10V	2193pF @ 10V	15W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (3.15x3.05) Dual
MSCSM170TAM23CTPAG	Microchip Technology	SIC 6N-CH 1700V 122A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 122A (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V Power - Max: 588W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	库存15	-	1700V (1.7kV)	122A (Tc)	22.5mOhm @ 60A, 20V	3.2V @ 5mA	356nC @ 20V	6600pF @ 1000V	588W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
HP8JE5TB1	Rohm Semiconductor	-100V 12.5A, DUAL PCH+PCH, HSOP8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12.5A (Tc) Rds On (Max) @ Id, Vgs: 127mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 50V Power - Max: 3W (Ta), 21W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	封装: -	Request a Quote	-	100V	4.5A (Ta), 12.5A (Tc)	127mOhm @ 4.5A, 10V	2.5V @ 1mA	38nC @ 10V	1370pF @ 50V	3W (Ta), 21W (Tc)	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
MSCSM120AM03T6LIAG	Microchip Technology	SIC 2N-CH 1200V 805A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 805A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V Vgs(th) (Max) @ Id: 2.8V @ 30mA Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1000V Power - Max: 3.215kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	805A (Tc)	3.1mOhm @ 400A, 20V	2.8V @ 30mA	2320nC @ 20V	30200pF @ 1000V	3.215kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
TSM2537CQ	Taiwan Semiconductor Corporation	MOSFET N/P-CH 20V 11.6A/9A 6TDFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, 9.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V, 744pF @ 10V Power - Max: 6.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-TDFN (2x2)	封装: -	Request a Quote	Logic Level Gate, 1.8V Drive	20V	11.6A (Tc), 9A (Tc)	30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V	1V @ 250µA	9.1nC @ 4.5V, 9.8nC @ 4.5V	677pF @ 10V, 744pF @ 10V	6.25W	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-TDFN (2x2)
FDSS2407S_B82086	Fairchild Semiconductor	MOSFET 2N-CH 62V 3.3A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 62V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Power - Max: 2.27W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	Logic Level Gate	62V	3.3A (Ta)	110mOhm @ 3.3A, 10V	3V @ 250µA	4.3nC @ 5V	300pF @ 15V	2.27W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
TSM4953DCS	Taiwan Semiconductor Corporation	MOSFET 2P-CH 30V 4.9A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 15V Power - Max: 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	-	30V	4.9A (Ta)	60mOhm @ 4.9A, 10V	3V @ 250µA	28nC @ 10V	745pF @ 15V	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
PSMN6R1-40HLX	Nexperia USA Inc.	MOSFET 2N-CH 40V 40A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Power - Max: 64W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封装: -	库存4,788	Logic Level Gate	40V	40A (Ta)	6.1mOhm @ 10A, 10V	2.1V @ 1mA	22.2nC @ 5V	3000pF @ 25V	64W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
PJT7600_R1_00001	Panjit International Inc.	MOSFET N/P-CH 20V 1A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	库存41,052	-	20V	1A (Ta), 700mA (Ta)	150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V	1V @ 250µA	1.6nC @ 4.5V, 2.2nC @ 4.5V	92pF @ 10V, 151pF @ 10V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
KFC6B21B70L	Nuvoton Technology Corporation	DUAL NCH MOSFET 12V, 9.0A, 4.6MO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFLGA, CSP Supplier Device Package: 6-CSP (1.24x1.89)	封装: -	Request a Quote	-	12V	9A (Ta)	5.5mOhm @ 4.5A, 4.5V	1.4V @ 260µA	15nC @ 4V	1810pF @ 10V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-XFLGA, CSP	6-CSP (1.24x1.89)
MCH6631-TL-E	onsemi	MOSFET N/P-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SQ3989EV-T1_BE3	Vishay Siliconix	MOSFET 2P-CH 30V 2.5A 6TSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.67W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	封装: -	库存27,000	-	30V	2.5A (Tc)	155mOhm @ 400mA, 10V	1.5V @ 250µA	11.1nC @ 10V	-	1.67W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP

AO4854L_102

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,464

Logic Level Gate

30V

8A

19 mOhm @ 8A, 10V

2.4V @ 250µA

18nC @ 10V

888pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ECH8662-TL-H

ON Semiconductor

MOSFET 2N-CH 40V 6.5A ECH8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 20V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

封装: 8-SMD, Flat Lead

库存4,096

Logic Level Gate

40V

6.5A

30 mOhm @ 3.5A, 4.5V

-

12nC @ 4.5V

1130pF @ 20V

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-ECH

FDW2502P

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 4.4A 8-TSSO

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 10V
Power - Max: 600mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存237,648

Logic Level Gate

20V

4.4A

35 mOhm @ 4.4A, 4.5V

1.5V @ 250µA

21nC @ 5V

1465pF @ 10V

600mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

STC5NF30V

STMicroelectronics

MOSFET 2N-CH 30V 5A 8-TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 31 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存125,676

Logic Level Gate

30V

5A

31 mOhm @ 2.5A, 4.5V

600mV @ 250µA

11.5nC @ 4.5V

460pF @ 15V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

APTC60TAM35PG

Microsemi Corporation

MOSFET 6N-CH 600V 72A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Power - Max: 416W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

封装: SP6

库存6,176

Standard

600V

72A

35 mOhm @ 72A, 10V

3.9V @ 5.4mA

518nC @ 10V

14000pF @ 25V

416W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

APTC60HM70T3G

Microsemi Corporation

MOSFET 4N-CH 600V 39A SP3

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封装: SP3

库存5,520

Standard

600V

39A

70 mOhm @ 39A, 10V

3.9V @ 2.7mA

259nC @ 10V

7000pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTM50DHM65T3G

Microsemi Corporation

MOSFET 2N-CH 500V 51A SP3

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Rds On (Max) @ Id, Vgs: 78 mOhm @ 42A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封装: SP3

库存7,664

Standard

500V

51A

78 mOhm @ 42A, 10V

5V @ 2.5mA

340nC @ 10V

10800pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

AON3818

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 24V 8A

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 12V
Power - Max: 2.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-DFN (2.9x2.3)

封装: 8-SMD, Flat Lead

库存5,040

Logic Level Gate

24V

8A

13.5 mOhm @ 8A, 4.5V

1.2V @ 250µA

15nC @ 4.5V

840pF @ 12V

2.7W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-DFN (2.9x2.3)

NTMD6N02R2G

ON Semiconductor

MOSFET 2N-CH 20V 3.92A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.92A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 16V
Power - Max: 730mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存534,024

Logic Level Gate

20V

3.92A

35 mOhm @ 6A, 4.5V

1.2V @ 250µA

20nC @ 4.5V

1100pF @ 16V

730mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

ZXMD63C03XTA

Diodes Incorporated

MOSFET N/P-CH 30V 8-MSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Power - Max: 1.04W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

库存1,954,092

Logic Level Gate

30V

-

135 mOhm @ 1.7A, 10V

1V @ 250µA (Min)

8nC @ 10V

290pF @ 25V

1.04W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

DMN2023UCB4-7

Diodes Incorporated

MOSFET 2N-CH X1-WLB1818-4

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.45W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLBGA
Supplier Device Package: X1-WLB1818-4

封装: 4-XFBGA, WLBGA

库存6,528

Logic Level Gate

-

29nC @ 4.5V

-

1.45W

-55°C ~ 150°C (TJ)

Surface Mount

4-XFBGA, WLBGA

X1-WLB1818-4

ZXMP6A16DN8TA

Diodes Incorporated

MOSFET 2P-CH 60V 2.9A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
Power - Max: 1.81W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存512,964

Logic Level Gate

60V

2.9A

85 mOhm @ 2.9A, 10V

1V @ 250µA (Min)

24.2nC @ 10V

1021pF @ 30V

1.81W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

FDMB2307NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 6-MLP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-MLP (2x3)

封装: 6-WDFN Exposed Pad

库存158,748

Logic Level Gate

-

28nC @ 5V

-

800mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-MLP (2x3)

DMN2016LFG-7

Diodes Incorporated

MOSFET 2N-CH 20V 5.2A 8UDFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1472pF @ 10V
Power - Max: 770mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Supplier Device Package: U-DFN3030-8

封装: 8-PowerUDFN

库存25,908

Logic Level Gate

20V

5.2A

18 mOhm @ 6A, 4.5V

1.1V @ 250µA

16nC @ 4.5V

1472pF @ 10V

770mW

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerUDFN

U-DFN3030-8

MSCSM120AM02T6LIAG

Microchip Technology

SIC 2N-CH 1200V 947A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 36mA
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V
Power - Max: 3.75kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

Request a Quote

-

1200V (1.2kV)

947A (Tc)

2.6mOhm @ 480A, 20V

2.8V @ 36mA

2784nC @ 20V

36200pF @ 1000V

3.75kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

DMT32M6LDG-13

Diodes Incorporated

MOSFET 2N-CH 30V 21A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V
Power - Max: 1.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type G)

封装: -

库存8,970

-

30V

21A (Ta), 47A (Tc)

2.5mOhm @ 18A, 10V

2.2V @ 400µA

15.6nC @ 4.5V

2101pF @ 15V

1.1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type G)

APTMC120HRM40CT3AG

Microchip Technology

SIC 2N-CH 1200V 73A SP3

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 3V @ 12.5mA
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V
Power - Max: 375W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3

封装: -

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-

1200V (1.2kV)

73A (Tc)

34mOhm @ 50A, 20V

3V @ 12.5mA

161nC @ 5V

2788pF @ 1000V

375W

-40°C ~ 150°C (TJ)

Chassis Mount

Module

SP3

IRF7307QTRPBF

Infineon Technologies

MOSFET N/P-CH 20V 5.2A/4.3A 8SO

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: -

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Logic Level Gate

20V

5.2A, 4.3A

50mOhm @ 2.6A, 4.5V

700mV @ 250µA

20nC @ 4.5V

660pF @ 15V

2W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

G170P02D32

Goford Semiconductor

MOSFET P+P-CH 20V 20A 15W DFN3*3

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2193pF @ 10V
Power - Max: 15W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (3.15x3.05) Dual

封装: -

库存15,000

-

20V

20A (Tc)

21mOhm @ 6A, 4.5V

1V @ 250µA

30nC @ 10V

2193pF @ 10V

15W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (3.15x3.05) Dual

MSCSM170TAM23CTPAG

Microchip Technology

SIC 6N-CH 1700V 122A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 122A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
Power - Max: 588W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

库存15

-

1700V (1.7kV)

122A (Tc)

22.5mOhm @ 60A, 20V

3.2V @ 5mA

356nC @ 20V

6600pF @ 1000V

588W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

HP8JE5TB1

Rohm Semiconductor

-100V 12.5A, DUAL PCH+PCH, HSOP8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 127mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 50V
Power - Max: 3W (Ta), 21W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-HSOP

封装: -

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-

100V

4.5A (Ta), 12.5A (Tc)

127mOhm @ 4.5A, 10V

2.5V @ 1mA

38nC @ 10V

1370pF @ 50V

3W (Ta), 21W (Tc)

150°C (TJ)

Surface Mount

8-PowerTDFN

8-HSOP

MSCSM120AM03T6LIAG

Microchip Technology

SIC 2N-CH 1200V 805A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 805A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 30mA
Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1000V
Power - Max: 3.215kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

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-

1200V (1.2kV)

805A (Tc)

3.1mOhm @ 400A, 20V

2.8V @ 30mA

2320nC @ 20V

30200pF @ 1000V

3.215kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

TSM2537CQ

Taiwan Semiconductor Corporation

MOSFET N/P-CH 20V 11.6A/9A 6TDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, 9.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V, 744pF @ 10V
Power - Max: 6.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-TDFN (2x2)

封装: -

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Logic Level Gate, 1.8V Drive

20V

11.6A (Tc), 9A (Tc)

30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V

1V @ 250µA

9.1nC @ 4.5V, 9.8nC @ 4.5V

677pF @ 10V, 744pF @ 10V

6.25W

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-TDFN (2x2)

FDSS2407S_B82086

Fairchild Semiconductor

MOSFET 2N-CH 62V 3.3A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 62V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Power - Max: 2.27W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

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Logic Level Gate

62V

3.3A (Ta)

110mOhm @ 3.3A, 10V

3V @ 250µA

4.3nC @ 5V

300pF @ 15V

2.27W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

TSM4953DCS

Taiwan Semiconductor Corporation

MOSFET 2P-CH 30V 4.9A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 15V
Power - Max: 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

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-

30V

4.9A (Ta)

60mOhm @ 4.9A, 10V

3V @ 250µA

28nC @ 10V

745pF @ 15V

2.5W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

PSMN6R1-40HLX

Nexperia USA Inc.

MOSFET 2N-CH 40V 40A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Power - Max: 64W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封装: -

库存4,788

Logic Level Gate

40V

40A (Ta)

6.1mOhm @ 10A, 10V

2.1V @ 1mA

22.2nC @ 5V

3000pF @ 25V

64W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

PJT7600_R1_00001

Panjit International Inc.

MOSFET N/P-CH 20V 1A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 700mA (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V, 2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V, 151pF @ 10V
Power - Max: 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

库存41,052

-

20V

1A (Ta), 700mA (Ta)

150mOhm @ 1A, 4.5V , 325mOhm @ 700mA, 4.5V

1V @ 250µA

1.6nC @ 4.5V, 2.2nC @ 4.5V

92pF @ 10V, 151pF @ 10V

350mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

KFC6B21B70L

Nuvoton Technology Corporation

DUAL NCH MOSFET 12V, 9.0A, 4.6MO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 260µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFLGA, CSP
Supplier Device Package: 6-CSP (1.24x1.89)

封装: -

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-

12V

9A (Ta)

5.5mOhm @ 4.5A, 4.5V

1.4V @ 260µA

15nC @ 4V

1810pF @ 10V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-XFLGA, CSP

6-CSP (1.24x1.89)

MCH6631-TL-E

onsemi

MOSFET N/P-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

SQ3989EV-T1_BE3

Vishay Siliconix

MOSFET 2P-CH 30V 2.5A 6TSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.67W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

封装: -

库存27,000

-

30V

2.5A (Tc)

155mOhm @ 400mA, 10V

1.5V @ 250µA

11.1nC @ 10V

-

1.67W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP