页 132 - 晶体管 - FET,MOSFET - 阵列 | 分立半导体产品 | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-87210559 ext.802

晶体管 - FET,MOSFET - 阵列

记录 5,684
页  132/190
图片
零件编号
制造商
描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AO4812L_101
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 6A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存3,328
Standard
30V
6A
30 mOhm @ 6A, 10V
2.4V @ 250µA
6.3nC @ 10V
310pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
RJM0306JSP-01#J0
Renesas Electronics America

MOSFET 2N/2P-CH 30V 3.5A 8-SOP

  • FET Type: 2 N and 2 P-Channel (H-Bridge)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
  • Power - Max: 2.2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存4,192
Logic Level Gate, 4V Drive
30V
3.5A
65 mOhm @ 2A, 10V
-
5nC @ 10V
290pF @ 10V
2.2W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
GWM120-0075X1-SMD
IXYS

MOSFET 6N-CH 75V 110A ISOPLUS

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 110A
  • Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Gull Wing
  • Supplier Device Package: ISOPLUS-DIL?
封装: 17-SMD, Gull Wing
库存2,208
Standard
75V
110A
4.9 mOhm @ 60A, 10V
4V @ 1mA
115nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
17-SMD, Gull Wing
ISOPLUS-DIL?
NTLJD3181PZTBG
ON Semiconductor

MOSFET 2P-CH 20V 2.2A 6WDFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
  • Power - Max: 710mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-WDFN (2x2)
封装: 6-WDFN Exposed Pad
库存4,096
Logic Level Gate
20V
2.2A
100 mOhm @ 2A, 4.5V
1V @ 250µA
7.8nC @ 4.5V
450pF @ 10V
710mW
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-WDFN (2x2)
hot SI6969BDQ-T1-E3
Vishay Siliconix

MOSFET 2P-CH 12V 4A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: 8-TSSOP (0.173", 4.40mm Width)
库存10,824
Logic Level Gate
12V
4A
30 mOhm @ 4.6A, 4.5V
800mV @ 250µA
25nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot FDG6302P
Fairchild/ON Semiconductor

MOSFET 2P-CH 25V 0.14A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 140mA
  • Rds On (Max) @ Id, Vgs: 10 Ohm @ 140mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
封装: 6-TSSOP, SC-88, SOT-363
库存450,276
Logic Level Gate
25V
140mA
10 Ohm @ 140mA, 4.5V
1.5V @ 250µA
0.31nC @ 4.5V
12pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
PMWD26UN,518
NXP

MOSFET 2N-CH 20V 7.8A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1366pF @ 16V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: 8-TSSOP (0.173", 4.40mm Width)
库存3,824
Logic Level Gate
20V
7.8A
30 mOhm @ 3.5A, 4.5V
700mV @ 1mA
23.6nC @ 4.5V
1366pF @ 16V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
IRF6802SDTRPBF
Infineon Technologies

MOSFET 2N-CH 25V 16A SA

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 16A
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 13V
  • Power - Max: 1.7W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DirectFET? Isometric SA
  • Supplier Device Package: DIRECTFET? SA
封装: DirectFET? Isometric SA
库存2,208
Logic Level Gate
25V
16A
4.2 mOhm @ 16A, 10V
2.1V @ 35µA
13nC @ 4.5V
1350pF @ 13V
1.7W
-40°C ~ 150°C (TJ)
Surface Mount
DirectFET? Isometric SA
DIRECTFET? SA
APTM50H15FT1G
Microsemi Corporation

MOSFET 4N-CH 500V 25A SP1

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 21A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V
  • Power - Max: 208W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
封装: SP1
库存2,976
Standard
500V
25A
180 mOhm @ 21A, 10V
5V @ 1mA
170nC @ 10V
5448pF @ 25V
208W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
hot SP8M3FU6TB
Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
  • Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存4,864
Logic Level Gate
30V
5A, 4.5A
51 mOhm @ 5A, 10V
2.5V @ 1mA
5.5nC @ 5V
230pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
MCH6604-TL-E
ON Semiconductor

MOSFET 2N-CH 50V 0.25A MCPH6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6.6pF @ 10V
  • Power - Max: 800mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-MCPH
封装: 6-SMD, Flat Leads
库存7,264
Logic Level Gate
50V
250mA
7.8 Ohm @ 50mA, 4V
-
1.57nC @ 10V
6.6pF @ 10V
800mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
6-MCPH
SSM6L39TU,LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.8A UF6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA
  • Rds On (Max) @ Id, Vgs: 143 mOhm @ 600MA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
封装: 6-SMD, Flat Leads
库存2,256
Logic Level Gate, 1.8V Drive
20V
800mA
143 mOhm @ 600MA, 4V
1V @ 1mA
-
268pF @ 10V
500mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
UF6
hot NTJD1155LT1G
ON Semiconductor

MOSFET N/P-CH 8V 1.3A SOT-363

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A
  • Rds On (Max) @ Id, Vgs: 175 mOhm @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 400mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
封装: 6-TSSOP, SC-88, SOT-363
库存1,457,844
Standard
8V
1.3A
175 mOhm @ 1.2A, 4.5V
1V @ 250µA
-
-
400mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
hot SI4539ADY-T1-E3
Vishay Siliconix

MOSFET N/P-CH 30V 4.4A 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A, 3.7A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存117,456
Logic Level Gate
30V
4.4A, 3.7A
36 mOhm @ 5.9A, 10V
1V @ 250µA (Min)
20nC @ 10V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SIZ902DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 16A POWERPAIR

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 13.8A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
  • Power - Max: 29W, 66W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PowerPair?
封装: 8-PowerWDFN
库存137,400
Logic Level Gate
30V
16A
12 mOhm @ 13.8A, 10V
2.2V @ 250µA
21nC @ 10V
790pF @ 15V
29W, 66W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PowerPair?
EPC2100ENGRT
EPC

MOSFET ARRAY 2N-CH 30V DIE

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Tj), 38A (Tj)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 5V, 2 mOhm @ 25A, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 15V, 15nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V, 1700pF @ 15V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: Die
库存51,732
GaNFET (Gallium Nitride)
30V
9.5A (Tj), 38A (Tj)
8 mOhm @ 25A, 5V, 2 mOhm @ 25A, 5V
2.5V @ 4mA, 2.5V @ 16mA
3.5nC @ 15V, 15nC @ 15V
380pF @ 15V, 1700pF @ 15V
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
FDS8935
Fairchild/ON Semiconductor

MOSFET 2P-CH 80V 2.1A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A
  • Rds On (Max) @ Id, Vgs: 183 mOhm @ 2.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 40V
  • Power - Max: 1.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存21,516
Logic Level Gate
80V
2.1A
183 mOhm @ 2.1A, 10V
3V @ 250µA
19nC @ 10V
879pF @ 40V
1.6W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
FW261-TL-E
onsemi

NCH+NCH 4V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
F445MR12W1M1B76BPSA1
Infineon Technologies

SIC 4N-CH 1200V 25A AG-EASY1B

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
  • Vgs(th) (Max) @ Id: 5.55V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1B-2
封装: -
Request a Quote
-
1200V (1.2kV)
25A (Tj)
45mOhm @ 25A, 15V
5.55V @ 10mA
62nC @ 15V
1840pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-EASY1B-2
HAT2218R0T-EL-E
Renesas

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MCACD20N10YHE3-TP
Micro Commercial Co

MOSFET

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
  • Power - Max: 50W (Tj)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: PDFN5060-8D
封装: -
Request a Quote
-
100V
20A (Tc)
22mOhm @ 20A, 10V
2.5V @ 250µA
17nC @ 10V
1240pF @ 25V
50W (Tj)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerLDFN
PDFN5060-8D
DF14MR12W1M1HFB67BPSA1
Infineon Technologies

SIC 1200V AG-EASY1B

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1B
封装: -
库存72
-
1200V (1.2kV)
-
-
-
-
-
-
-
Chassis Mount
Module
AG-EASY1B
IRFI4212H-117PXKMA1
Infineon Technologies

MOSFET 2N-CH 100V 11A TO220-5

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Rds On (Max) @ Id, Vgs: 72.5mOhm @ 6.6A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 50V
  • Power - Max: 18W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5 Full Pack, Formed Leads
  • Supplier Device Package: TO-220-5 Full-Pak
封装: -
库存2,817
-
100V
11A (Tc)
72.5mOhm @ 6.6A, 10V
5V @ 250µA
18nC @ 10V
490pF @ 50V
18W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5 Full Pack, Formed Leads
TO-220-5 Full-Pak
HUF76113DK8T
Fairchild Semiconductor

MOSFET 2N-CH 30V 6A US8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 25V
  • Power - Max: 2.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFSOP (0.091", 2.30mm Width)
  • Supplier Device Package: US8
封装: -
Request a Quote
Logic Level Gate
30V
6A (Ta)
32mOhm @ 6A, 10V
3V @ 250µA
19.2nC @ 10V
605pF @ 25V
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-VFSOP (0.091", 2.30mm Width)
US8
CAS110M12BM2
Wolfspeed, Inc.

SIC 1200V 110A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 110A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
封装: -
Request a Quote
-
1200V (1.2kV)
110A
-
-
-
-
-
-
Chassis Mount
Module
-
AONP36336
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 50A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V
  • Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-DFN-EP (3.3x3.3)
封装: -
库存42,618
-
30V
50A (Tc)
4.7mOhm @ 20A, 10V
1.9V @ 250µA
29nC @ 10V
1330pF @ 15V
3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-DFN-EP (3.3x3.3)
MCQD09P04-TP
Micro Commercial Co

MOSFET 2P-CH 40V 9A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3302pF @ 30V
  • Power - Max: 1.7W (Tj)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: -
库存23,940
-
40V
9A (Tc)
23mOhm @ 9A, 10V
2.5V @ 250µA
75nC @ 10V
3302pF @ 30V
1.7W (Tj)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SIL2322A-TP
Micro Commercial Co

MOSFET 2N-CH 20V 3A SOT23-6L

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6L
封装: -
库存25,362
-
20V
3A
30mOhm @ 3.6A, 4.5V
1.25V @ 250µA
10nC @ 4.5V
500pF @ 10V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6L
2N7002KDW-G
Comchip Technology

DIODE

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
  • Power - Max: 150mW (Ta)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封装: -
Request a Quote
-
60V
340mA (Ta)
5Ohm @ 500mA, 10V
2.5V @ 1mA
-
40pF @ 10V
150mW (Ta)
-40°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
SSF3714
Good-Ark Semiconductor

MOSFET N/P-CH 30V 4A/3A SOT23-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc), 3A (Tc)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V, 65mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
  • Power - Max: 2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6L
封装: -
库存16,320
-
30V
4A (Tc), 3A (Tc)
30mOhm @ 4A, 10V, 65mOhm @ 3A, 10V
2.5V @ 250µA
8nC @ 4.5V
500pF @ 25V
2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6L