页 54 - 晶体管 - 双极 (BJT) - 射频 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFP420E6433HTMA1	Infineon Technologies	TRANSISTOR RF NPN 4.5V SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 21dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	封装: SC-82A, SOT-343	库存2,432	5V	25GHz	1.1dB @ 1.8GHz	21dB	160mW	60 @ 20mA, 4V	35mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
MRF4427GR2	Microsemi Corporation	RF NPN TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,672	20V	-	-	20dB	1.5W	10 @ 10mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
2SC4957-T1-A	CEL	RF TRANSISTOR NPN SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 11dB Power - Max: 180mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	封装: TO-253-4, TO-253AA	库存3,344	6V	12GHz	1.5dB @ 2GHz	11dB	180mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
2SC3357-T1-A	CEL	RF TRANSISTOR NPN SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Gain: 10dB Power - Max: 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	封装: TO-243AA	库存3,705,984	12V	6.5GHz	1.8dB @ 1GHz	10dB	1.2W	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
MRF586	Microsemi Corporation	TRANS RF BIPO 1W 200MA TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 17V Frequency - Transition: 3GHz Noise Figure (dB Typ @ f): - Gain: 13.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	封装: TO-205AD, TO-39-3 Metal Can	库存11,112	17V	3GHz	-	13.5dB	1W	40 @ 50mA, 5V	200mA	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
2SC5231A-9-TL-E	ON Semiconductor	TRANS NPN BIPO 70MA 10V SMCP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Gain: 12dB ~ 8.5dB @ 1GHz Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Gull Wing Supplier Device Package: SMCP	封装: 3-SMD, Gull Wing	库存4,384	10V	7GHz	1dB @ 1GHz	12dB ~ 8.5dB @ 1GHz	100mW	135 @ 20mA, 5V	70mA	150°C (TJ)	Surface Mount	3-SMD, Gull Wing	SMCP
ZUMTS17HTA	Diodes Incorporated	TRANSISTOR RF NPN SC70-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.3GHz Noise Figure (dB Typ @ f): 4.5dB @ 500MHz Gain: - Power - Max: 330mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封装: SC-70, SOT-323	库存3,936	15V	1.3GHz	4.5dB @ 500MHz	-	330mW	70 @ 2mA, 1V	25mA	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
NE851M33-T3-A	CEL	TRANSISTOR NPN 2GHZ M33 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz Gain: - Power - Max: 130mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: 3-SuperMiniMold (M33)	封装: 3-SMD, Flat Leads	库存3,344	5.5V	4.5GHz	1.9dB ~ 2.5dB @ 2GHz	-	130mW	100 @ 5mA, 1V	100mA	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	3-SuperMiniMold (M33)
NE663M04-T2-A	CEL	RF TRANSISTOR NPN SOT-343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.3V Frequency - Transition: 15GHz Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Gain: 14dB Power - Max: 190mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: SOT-343F	封装: SOT-343F	库存6,128	3.3V	15GHz	1.2dB @ 2GHz	14dB	190mW	50 @ 10mA, 2V	100mA	150°C (TJ)	Surface Mount	SOT-343F	SOT-343F
MAX2601ESA	Maxim Integrated	IC TRANS 3.6V 1W RF PWR 8-SOIC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1GHz Noise Figure (dB Typ @ f): 3.3dB @ 836MHz Gain: 11.6dB Power - Max: 6.4W DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V Current - Collector (Ic) (Max): 1.2A Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	封装: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	库存3,760	15V	1GHz	3.3dB @ 836MHz	11.6dB	6.4W	100 @ 250mA, 3V	1.2A	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
BFR93AR,215	NXP	TRANS NPN 35MA 12V 6GHZ SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 1GHz ~ 2GHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V Current - Collector (Ic) (Max): 35mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	封装: TO-236-3, SC-59, SOT-23-3	库存2,048	12V	6GHz	1.9dB ~ 3dB @ 1GHz ~ 2GHz	-	300mW	40 @ 30mA, 5V	35mA	175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
1214-300M	Microsemi Corporation	TRANS RF BIPO 88W 4A 55ST1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 88W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55ST Supplier Device Package: 55ST	封装: 55ST	库存6,656	50V	1.2GHz ~ 1.4GHz	-	7dB	88W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	55ST	55ST
MS2554	Microsemi Corporation	TRANS RF BIPO 600W 17.8A SO42 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.2dB Power - Max: 600W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 17.8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218	封装: M218	库存4,688	65V	1.025GHz ~ 1.15GHz	-	6.2dB	600W	15 @ 1A, 5V	17.8A	200°C (TJ)	Chassis Mount	M218	M218
JANTX2N2857	Microsemi Corporation	TRANS NPN 15V 0.04A TO-72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 12.5dB ~ 21dB @ 450MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	封装: TO-72-3 Metal Can	库存3,712	15V	500MHz	4.5dB @ 450MHz	12.5dB ~ 21dB @ 450MHz	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
LPT16ED	Skyworks Solutions Inc.	TRANSISTOR NPN BIPOLAR SIGE Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4V Frequency - Transition: 16GHz Noise Figure (dB Typ @ f): - Gain: 5.2dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 2V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: Die	库存3,584	4V	16GHz	-	5.2dB	250mW	50 @ 20mA, 2V	80mA	150°C (TJ)	Surface Mount	Die	Die
CPH6020-TL-E	ON Semiconductor	TRANS NPN 8V 0.15A CPH6 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 16GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 13.5dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-CPH	封装: SOT-23-6 Thin, TSOT-23-6	库存6,864	8V	16GHz	1.2dB @ 1GHz	13.5dB	700mW	60 @ 50mA, 5V	150mA	150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-CPH
BFR 360L3 E6765	Infineon Technologies	TRANSISTOR NPN RF 6V TSLP-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz Gain: 11.5dB ~ 16dB Power - Max: 210mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	封装: SC-101, SOT-883	库存2,000	9V	14GHz	1dB ~ 1.3dB @ 1.8GHz ~ 3GHz	11.5dB ~ 16dB	210mW	90 @ 15mA, 3V	35mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3
BFU768F,115	NXP	TRANS RF NPN 2.8V 70MA DFP4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.8V Frequency - Transition: - Noise Figure (dB Typ @ f): 1.1dB @ 2.4GHz Gain: 13.1dB Power - Max: 220mW DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: 4-DFP	封装: SOT-343F	库存6,672	2.8V	-	1.1dB @ 2.4GHz	13.1dB	220mW	155 @ 10mA, 2V	70mA	150°C (TJ)	Surface Mount	SOT-343F	4-DFP
PBR941B,215	NXP	TRANSISTOR NPN UHF 50MA SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz Gain: - Power - Max: 360mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	封装: TO-236-3, SC-59, SOT-23-3	库存26,562	10V	9GHz	1.5dB ~ 2.5dB @ 1GHz	-	360mW	100 @ 5mA, 6V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
MMBT918	Fairchild/ON Semiconductor	TRANSISTOR RF NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 15dB Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	封装: TO-236-3, SC-59, SOT-23-3	库存69,672	15V	600MHz	6dB @ 60MHz	15dB	225mW	20 @ 3mA, 1V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
MAX2601ESA+	Maxim Integrated	TRANS RF NPN 900MHZ 15V 8SOIC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1GHz Noise Figure (dB Typ @ f): 3.3dB @ 836MHz Gain: 11.6dB Power - Max: 6.4W DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V Current - Collector (Ic) (Max): 1.2A Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	封装: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	库存9,840	15V	1GHz	3.3dB @ 836MHz	11.6dB	6.4W	100 @ 250mA, 3V	1.2A	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
NTE2688	NTE Electronics, Inc	RF TRANS NPN 450V 20MHZ TO220 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 450V Frequency - Transition: 20MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 60W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 4A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	封装: -	Request a Quote	450V	20MHz	-	-	60W	10 @ 4A, 5V	8A	150°C (TJ)	Through Hole	TO-220-3	TO-220
2SC5606-A	CEL	RF TRANS NPN 3.3V 21GHZ SOT523 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.3V Frequency - Transition: 21GHz Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Gain: 12.5dB Power - Max: 115mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: -	封装: -	Request a Quote	3.3V	21GHz	1.2dB @ 2GHz	12.5dB	115mW	60 @ 5mA, 2V	35mA	150°C (TJ)	Surface Mount	SOT-523	-
MRFC545	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NESG260234-T1-AZ	CEL	TRANS NPN 460MHZ SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9.2V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1.9W DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 3V Current - Collector (Ic) (Max): 600mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: 3-PowerMiniMold	封装: -	Request a Quote	9.2V	-	-	-	1.9W	80 @ 100mA, 3V	600mA	-	Surface Mount	TO-243AA	3-PowerMiniMold
61045	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC5751-A	CEL	RF TRANS NPN 6V 15GHZ SOT343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 15GHz Noise Figure (dB Typ @ f): 1.7dB @ 2GHz Gain: 16dB Power - Max: 205mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: -	封装: -	Request a Quote	6V	15GHz	1.7dB @ 2GHz	16dB	205mW	75 @ 20mA, 3V	50mA	150°C (TJ)	Surface Mount	SOT-343F	-
2SC5820WU-TL-E	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4V Frequency - Transition: 20GHz Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz Gain: 17.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: CMPAK-4	封装: -	Request a Quote	4V	20GHz	1.15dB @ 1.8GHz	17.5dB	100mW	70 @ 20mA, 2V	35mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	CMPAK-4
MS2502W	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MS2554A	Microsemi Corporation	RF TRANS NPN 65V 1.15GHZ M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.2dB Power - Max: 600W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 17.8A Operating Temperature: 200°C Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	封装: -	Request a Quote	65V	1.025GHz ~ 1.15GHz	-	6.2dB	600W	15 @ 1A, 5V	17.8A	200°C	Chassis Mount	M216	M216

BFP420E6433HTMA1

Infineon Technologies

TRANSISTOR RF NPN 4.5V SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 21dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

封装: SC-82A, SOT-343

库存2,432

5V

25GHz

1.1dB @ 1.8GHz

21dB

160mW

60 @ 20mA, 4V

35mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

MRF4427GR2

Microsemi Corporation

RF NPN TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 20dB
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,672

20V

-

20dB

1.5W

10 @ 10mA, 5V

400mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

2SC4957-T1-A

CEL

RF TRANSISTOR NPN SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 11dB
Power - Max: 180mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

封装: TO-253-4, TO-253AA

库存3,344

6V

12GHz

1.5dB @ 2GHz

11dB

180mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

2SC3357-T1-A

CEL

RF TRANSISTOR NPN SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Gain: 10dB
Power - Max: 1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

封装: TO-243AA

库存3,705,984

12V

6.5GHz

1.8dB @ 1GHz

10dB

1.2W

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

MRF586

Microsemi Corporation

TRANS RF BIPO 1W 200MA TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 17V
Frequency - Transition: 3GHz
Noise Figure (dB Typ @ f): -
Gain: 13.5dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

封装: TO-205AD, TO-39-3 Metal Can

库存11,112

17V

3GHz

-

13.5dB

1W

40 @ 50mA, 5V

200mA

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

2SC5231A-9-TL-E

ON Semiconductor

TRANS NPN BIPO 70MA 10V SMCP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Gain: 12dB ~ 8.5dB @ 1GHz
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Gull Wing
Supplier Device Package: SMCP

封装: 3-SMD, Gull Wing

库存4,384

10V

7GHz

1dB @ 1GHz

12dB ~ 8.5dB @ 1GHz

100mW

135 @ 20mA, 5V

70mA

150°C (TJ)

Surface Mount

3-SMD, Gull Wing

SMCP

ZUMTS17HTA

Diodes Incorporated

TRANSISTOR RF NPN SC70-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.3GHz
Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
Gain: -
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封装: SC-70, SOT-323

库存3,936

15V

1.3GHz

4.5dB @ 500MHz

-

330mW

70 @ 2mA, 1V

25mA

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

NE851M33-T3-A

CEL

TRANSISTOR NPN 2GHZ M33

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz
Gain: -
Power - Max: 130mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-SuperMiniMold (M33)

封装: 3-SMD, Flat Leads

库存3,344

5.5V

4.5GHz

1.9dB ~ 2.5dB @ 2GHz

-

130mW

100 @ 5mA, 1V

100mA

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

3-SuperMiniMold (M33)

NE663M04-T2-A

CEL

RF TRANSISTOR NPN SOT-343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.3V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Gain: 14dB
Power - Max: 190mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: SOT-343F

封装: SOT-343F

库存6,128

3.3V

15GHz

1.2dB @ 2GHz

14dB

190mW

50 @ 10mA, 2V

100mA

150°C (TJ)

Surface Mount

SOT-343F

MAX2601ESA

Maxim Integrated

IC TRANS 3.6V 1W RF PWR 8-SOIC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1GHz
Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
Gain: 11.6dB
Power - Max: 6.4W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
Current - Collector (Ic) (Max): 1.2A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOIC-EP

封装: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

库存3,760

15V

1GHz

3.3dB @ 836MHz

11.6dB

6.4W

100 @ 250mA, 3V

1.2A

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width) Exposed Pad

8-SOIC-EP

BFR93AR,215

NXP

TRANS NPN 35MA 12V 6GHZ SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 1GHz ~ 2GHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

封装: TO-236-3, SC-59, SOT-23-3

库存2,048

12V

6GHz

1.9dB ~ 3dB @ 1GHz ~ 2GHz

-

300mW

40 @ 30mA, 5V

35mA

175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

1214-300M

Microsemi Corporation

TRANS RF BIPO 88W 4A 55ST1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 88W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST
Supplier Device Package: 55ST

封装: 55ST

库存6,656

50V

1.2GHz ~ 1.4GHz

-

7dB

88W

20 @ 500mA, 5V

4A

200°C (TJ)

Chassis Mount

55ST

MS2554

Microsemi Corporation

TRANS RF BIPO 600W 17.8A SO42

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.2dB
Power - Max: 600W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 17.8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M218
Supplier Device Package: M218

封装: M218

库存4,688

65V

1.025GHz ~ 1.15GHz

-

6.2dB

600W

15 @ 1A, 5V

17.8A

200°C (TJ)

Chassis Mount

M218

JANTX2N2857

Microsemi Corporation

TRANS NPN 15V 0.04A TO-72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 12.5dB ~ 21dB @ 450MHz
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-72-3 Metal Can
Supplier Device Package: TO-72

封装: TO-72-3 Metal Can

库存3,712

15V

500MHz

4.5dB @ 450MHz

12.5dB ~ 21dB @ 450MHz

200mW

30 @ 3mA, 1V

40mA

-65°C ~ 200°C (TJ)

Through Hole

TO-72-3 Metal Can

TO-72

LPT16ED

Skyworks Solutions Inc.

TRANSISTOR NPN BIPOLAR SIGE

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4V
Frequency - Transition: 16GHz
Noise Figure (dB Typ @ f): -
Gain: 5.2dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 2V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: Die

库存3,584

4V

16GHz

-

5.2dB

250mW

50 @ 20mA, 2V

80mA

150°C (TJ)

Surface Mount

Die

CPH6020-TL-E

ON Semiconductor

TRANS NPN 8V 0.15A CPH6

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 16GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 13.5dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-CPH

封装: SOT-23-6 Thin, TSOT-23-6

库存6,864

8V

16GHz

1.2dB @ 1GHz

13.5dB

700mW

60 @ 50mA, 5V

150mA

150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-CPH

BFR 360L3 E6765

Infineon Technologies

TRANSISTOR NPN RF 6V TSLP-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Gain: 11.5dB ~ 16dB
Power - Max: 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

封装: SC-101, SOT-883

库存2,000

9V

14GHz

1dB ~ 1.3dB @ 1.8GHz ~ 3GHz

11.5dB ~ 16dB

210mW

90 @ 15mA, 3V

35mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3

BFU768F,115

NXP

TRANS RF NPN 2.8V 70MA DFP4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.8V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.1dB @ 2.4GHz
Gain: 13.1dB
Power - Max: 220mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: 4-DFP

封装: SOT-343F

库存6,672

2.8V

-

1.1dB @ 2.4GHz

13.1dB

220mW

155 @ 10mA, 2V

70mA

150°C (TJ)

Surface Mount

SOT-343F

4-DFP

PBR941B,215

NXP

TRANSISTOR NPN UHF 50MA SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz
Gain: -
Power - Max: 360mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

封装: TO-236-3, SC-59, SOT-23-3

库存26,562

10V

9GHz

1.5dB ~ 2.5dB @ 1GHz

-

360mW

100 @ 5mA, 6V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

MMBT918

Fairchild/ON Semiconductor

TRANSISTOR RF NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: 15dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

封装: TO-236-3, SC-59, SOT-23-3

库存69,672

15V

600MHz

6dB @ 60MHz

15dB

225mW

20 @ 3mA, 1V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

MAX2601ESA+

Maxim Integrated

TRANS RF NPN 900MHZ 15V 8SOIC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1GHz
Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
Gain: 11.6dB
Power - Max: 6.4W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
Current - Collector (Ic) (Max): 1.2A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOIC-EP

封装: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

库存9,840

15V

1GHz

3.3dB @ 836MHz

11.6dB

6.4W

100 @ 250mA, 3V

1.2A

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width) Exposed Pad

8-SOIC-EP

NTE2688

NTE Electronics, Inc

RF TRANS NPN 450V 20MHZ TO220

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 450V
Frequency - Transition: 20MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 60W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 4A, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

封装: -

Request a Quote

450V

20MHz

-

60W

10 @ 4A, 5V

8A

150°C (TJ)

Through Hole

TO-220-3

TO-220

2SC5606-A

CEL

RF TRANS NPN 3.3V 21GHZ SOT523

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.3V
Frequency - Transition: 21GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Gain: 12.5dB
Power - Max: 115mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 2V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: -

封装: -

Request a Quote

3.3V

21GHz

1.2dB @ 2GHz

12.5dB

115mW

60 @ 5mA, 2V

35mA

150°C (TJ)

Surface Mount

SOT-523

-

MRFC545

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

NESG260234-T1-AZ

CEL

TRANS NPN 460MHZ SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9.2V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1.9W
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 3V
Current - Collector (Ic) (Max): 600mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: 3-PowerMiniMold

封装: -

Request a Quote

9.2V

-

1.9W

80 @ 100mA, 3V

600mA

-

Surface Mount

TO-243AA

3-PowerMiniMold

61045

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

2SC5751-A

CEL

RF TRANS NPN 6V 15GHZ SOT343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Gain: 16dB
Power - Max: 205mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: -

封装: -

Request a Quote

6V

15GHz

1.7dB @ 2GHz

16dB

205mW

75 @ 20mA, 3V

50mA

150°C (TJ)

Surface Mount

SOT-343F

-

2SC5820WU-TL-E

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4V
Frequency - Transition: 20GHz
Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz
Gain: 17.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: CMPAK-4

封装: -

Request a Quote

4V

20GHz

1.15dB @ 1.8GHz

17.5dB

100mW

70 @ 20mA, 2V

35mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

CMPAK-4

MS2502W

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MS2554A

Microsemi Corporation

RF TRANS NPN 65V 1.15GHZ M216

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.2dB
Power - Max: 600W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 17.8A
Operating Temperature: 200°C
Mounting Type: Chassis Mount
Package / Case: M216
Supplier Device Package: M216

封装: -

Request a Quote

65V

1.025GHz ~ 1.15GHz

-

6.2dB

600W

15 @ 1A, 5V

17.8A

200°C

Chassis Mount

M216