页 49 - 晶体管 - 双极 (BJT) - 射频 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFR 183T E6327	Infineon Technologies	TRANSISTOR RF NPN 12V SC-75 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 900MHz ~ 1.8GHz Gain: 19.5dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	封装: SC-75, SOT-416	库存5,808	12V	8GHz	1.2dB ~ 2dB @ 900MHz ~ 1.8GHz	19.5dB	250mW	50 @ 15mA, 8V	65mA	150°C (TJ)	Surface Mount	SC-75, SOT-416	PG-SC-75
MRF8372R1	Microsemi Corporation	TRANS NPN 16V 200MA SO8 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 9.5dB Power - Max: 2.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存304,092	16V	870MHz	-	8dB ~ 9.5dB	2.2W	30 @ 50mA, 5V	200mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MRF8372GR1	Microsemi Corporation	TRANS NPN 16V 200MA SO8 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 9.5dB Power - Max: 2.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,216	16V	870MHz	-	8dB ~ 9.5dB	2.2W	30 @ 50mA, 5V	200mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
JANTXV2N2857	Microsemi Corporation	TRANS NPN 15V 0.04A TO-72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 12.5dB ~ 21dB @ 450MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	封装: TO-72-3 Metal Can	库存3,856	15V	500MHz	4.5dB @ 450MHz	12.5dB ~ 21dB @ 450MHz	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
2307	Microsemi Corporation	TRANS BIPO 20V 7W 55BT Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 42V Frequency - Transition: 2.3GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 20.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	封装: 55BT	库存360,000	42V	2.3GHz	-	8dB	20.5W	10 @ 500mA, 5V	1A	200°C (TJ)	Chassis Mount	55BT	55BT
AT-42086-TR1G	Broadcom Limited	TRANS NPN BIPO 12V 80MA 86-SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.9dB ~ 3.5dB @ 2GHz ~ 4GHz Gain: 9dB ~ 13dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-86 Supplier Device Package: 86 Plastic	封装: SOT-86	库存208,332	12V	8GHz	1.9dB ~ 3.5dB @ 2GHz ~ 4GHz	9dB ~ 13dB	500mW	30 @ 35mA, 8V	80mA	150°C (TJ)	Surface Mount	SOT-86	86 Plastic
AT-41586-TR2G	Broadcom Limited	TRANS NPN BIPO 12V 60MA 86-SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz Gain: 8dB ~ 17dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V Current - Collector (Ic) (Max): 60mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-86 Supplier Device Package: 86 Plastic	封装: SOT-86	库存3,216	12V	8GHz	1.4dB ~ 3dB @ 1GHz ~ 4GHz	8dB ~ 17dB	500mW	30 @ 10mA, 8V	60mA	150°C (TJ)	Surface Mount	SOT-86	86 Plastic
PN5179	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 12V TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): 5dB @ 200MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 (TO-226AA)	库存4,496	12V	2GHz	5dB @ 200MHz	15dB	350mW	25 @ 3mA, 1V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
AT-41533-TR1	Broadcom Limited	IC TRANS NPN GP BIPOLAR SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz Gain: 9dB ~ 14.5dB Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	封装: TO-236-3, SC-59, SOT-23-3	库存85,500	12V	-	1dB ~ 1.6dB @ 900MHz ~ 2.4GHz	9dB ~ 14.5dB	225mW	30 @ 5mA, 5V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
AT-32033-TR1	Broadcom Limited	IC TRANS NPN BIPOLAR SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz Gain: 11dB ~ 12.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V Current - Collector (Ic) (Max): 32mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	封装: TO-236-3, SC-59, SOT-23-3	库存685,440	5.5V	-	1dB ~ 1.3dB @ 900MHz	11dB ~ 12.5dB	200mW	70 @ 2mA, 2.7V	32mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
BFQ591,115	NXP	TRANS NPN 15V 7GHZ SOT89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 2.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	封装: TO-243AA	库存4,848	15V	7GHz	-	-	2.25W	60 @ 70mA, 8V	200mA	175°C (TJ)	Surface Mount	TO-243AA	SOT-89-3
PRF949,115	NXP	TRANSISTOR NPN 10V 9GHZ SOT416 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75	封装: SC-75, SOT-416	库存7,120	10V	9GHz	1.5dB ~ 2.5dB @ 1GHz	-	150mW	100 @ 5mA, 6V	50mA	150°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75
BFG97,115	NXP	TRANS NPN 15V 5.5GHZ SOT223 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	封装: TO-261-4, TO-261AA	库存7,488	15V	5.5GHz	-	-	1W	25 @ 70mA, 10V	100mA	175°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BFR540,215	NXP	TRANS NPN 120MA 15V 9GHZ SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz Gain: - Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V Current - Collector (Ic) (Max): 120mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	封装: TO-236-3, SC-59, SOT-23-3	库存2,800	15V	9GHz	1.3dB ~ 2.4dB @ 900MHz	-	500mW	100 @ 40mA, 8V	120mA	175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
BFG93A,215	NXP	TRANS NPN 12V 35MA SOT143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1.7dB ~ 2.3dB @ 1GHz ~ 2GHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V Current - Collector (Ic) (Max): 35mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	封装: TO-253-4, TO-253AA	库存4,992	12V	6GHz	1.7dB ~ 2.3dB @ 1GHz ~ 2GHz	-	300mW	40 @ 30mA, 5V	35mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
TAN500	Microsemi Corporation	TRANS RF BIPO 2500W 50A 55ST-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 2500W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 50A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55ST Supplier Device Package: 55ST	封装: 55ST	库存5,792	75V	960MHz ~ 1.215GHz	-	9dB	2500W	20 @ 1A, 5V	50A	200°C (TJ)	Chassis Mount	55ST	55ST
HN3C10FUTE85LF	Toshiba Semiconductor and Storage	TRANSISTOR NPN US6 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: 6-TSSOP, SC-88, SOT-363	库存3,120	12V	7GHz	1.1dB @ 1GHz	11.5dB	200mW	80 @ 20mA, 10V	80mA	-	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
MRF321	M/A-Com Technology Solutions	TRANS RF NPN 33V 1.1A 244-04 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 33V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 13dB Power - Max: 10W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 1.1A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 244-04 Supplier Device Package: 244-04, STYLE 1	封装: 244-04	库存5,840	33V	-	-	13dB	10W	20 @ 500mA, 5V	1.1A	-	Chassis Mount	244-04	244-04, STYLE 1
KSC1674YBU	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 20MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Gain: - Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 (TO-226AA)	库存57,534	20V	600MHz	3dB ~ 5dB @ 100MHz	-	250mW	120 @ 1mA, 6V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BFP760H6327XTSA1	Infineon Technologies	TRANSISTOR RF NPN AMP SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz Gain: 16.5dB ~ 29dB Power - Max: 240mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 35mA, 3V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	封装: SC-82A, SOT-343	库存22,542	4V	45GHz	0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz	16.5dB ~ 29dB	240mW	160 @ 35mA, 3V	70mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
BFY90	Central Semiconductor Corp	TRANS NPN 30V TO72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 5.5dB @ 800MHz Gain: 23dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	封装: TO-206AF, TO-72-4 Metal Can	库存14,844	15V	1.4GHz	5.5dB @ 800MHz	23dB	200mW	20 @ 25mA, 1V	25mA	-65°C ~ 200°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
2SC4308TZ-E	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 2.5GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	封装: -	Request a Quote	20V	2.5GHz	-	-	600mW	50 @ 50mA, 5V	300mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
MS2275	Microsemi Corporation	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC5336-AZ	CEL	RF TRANS NPN 12V 6.5GHZ SOT89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Gain: 12dB Power - Max: 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: -	封装: -	Request a Quote	12V	6.5GHz	1.8dB @ 1GHz	12dB	1.2W	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-243AA	-
2SC5337-AZ	CEL	RF TRANS NPN 15V SOT89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 2dB @ 1GHz Gain: 8.3dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: -	封装: -	Request a Quote	15V	-	2dB @ 1GHz	8.3dB	2W	60 @ 50mA, 10V	250mA	150°C (TJ)	Surface Mount	TO-243AA	-
MT3S113-TE85L-F	Toshiba Semiconductor and Storage	RF TRANS NPN 5.3V 12.5GHZ SMINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.3V Frequency - Transition: 12.5GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Gain: 11.8dB Power - Max: 800mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	封装: -	库存8,601	5.3V	12.5GHz	1.45dB @ 1GHz	11.8dB	800mW	200 @ 30mA, 5V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
2SC4536-AZ	CEL	RF TRANS NPN 15V SOT89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 2dB @ 1GHz Gain: 7.2dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	封装: -	Request a Quote	15V	-	2dB @ 1GHz	7.2dB	2W	60 @ 50mA, 10V	250mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
NTE316	NTE Electronics, Inc	RF TRANS NPN 15V 1.4GHZ TO72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 15dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	封装: -	Request a Quote	15V	1.4GHz	4.5dB @ 450MHz	15dB	200mW	25 @ 2mA, 5V	50mA	-	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
NTE295	NTE Electronics, Inc	RF TRANS NPN 75V 250MHZ TO126 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Frequency - Transition: 250MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 750mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	封装: -	Request a Quote	75V	250MHz	-	-	750mW	60 @ 500mA, 5V	1A	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
MPSH10-AP	Micro Commercial Co	TRANSISTOR TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92	封装: -	Request a Quote	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92

BFR 183T E6327

Infineon Technologies

TRANSISTOR RF NPN 12V SC-75

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain: 19.5dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 15mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: PG-SC-75

封装: SC-75, SOT-416

库存5,808

12V

8GHz

1.2dB ~ 2dB @ 900MHz ~ 1.8GHz

19.5dB

250mW

50 @ 15mA, 8V

65mA

150°C (TJ)

Surface Mount

SC-75, SOT-416

PG-SC-75

MRF8372R1

Microsemi Corporation

TRANS NPN 16V 200MA SO8

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 870MHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 9.5dB
Power - Max: 2.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存304,092

16V

870MHz

-

8dB ~ 9.5dB

2.2W

30 @ 50mA, 5V

200mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MRF8372GR1

Microsemi Corporation

TRANS NPN 16V 200MA SO8

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 870MHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 9.5dB
Power - Max: 2.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,216

16V

870MHz

-

8dB ~ 9.5dB

2.2W

30 @ 50mA, 5V

200mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

JANTXV2N2857

Microsemi Corporation

TRANS NPN 15V 0.04A TO-72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 12.5dB ~ 21dB @ 450MHz
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-72-3 Metal Can
Supplier Device Package: TO-72

封装: TO-72-3 Metal Can

库存3,856

15V

500MHz

4.5dB @ 450MHz

12.5dB ~ 21dB @ 450MHz

200mW

30 @ 3mA, 1V

40mA

-65°C ~ 200°C (TJ)

Through Hole

TO-72-3 Metal Can

TO-72

2307

Microsemi Corporation

TRANS BIPO 20V 7W 55BT

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 42V
Frequency - Transition: 2.3GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 20.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55BT
Supplier Device Package: 55BT

封装: 55BT

库存360,000

42V

2.3GHz

-

8dB

20.5W

10 @ 500mA, 5V

1A

200°C (TJ)

Chassis Mount

55BT

AT-42086-TR1G

Broadcom Limited

TRANS NPN BIPO 12V 80MA 86-SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 3.5dB @ 2GHz ~ 4GHz
Gain: 9dB ~ 13dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-86
Supplier Device Package: 86 Plastic

封装: SOT-86

库存208,332

12V

8GHz

1.9dB ~ 3.5dB @ 2GHz ~ 4GHz

9dB ~ 13dB

500mW

30 @ 35mA, 8V

80mA

150°C (TJ)

Surface Mount

SOT-86

86 Plastic

AT-41586-TR2G

Broadcom Limited

TRANS NPN BIPO 12V 60MA 86-SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
Gain: 8dB ~ 17dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
Current - Collector (Ic) (Max): 60mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-86
Supplier Device Package: 86 Plastic

封装: SOT-86

库存3,216

12V

8GHz

1.4dB ~ 3dB @ 1GHz ~ 4GHz

8dB ~ 17dB

500mW

30 @ 10mA, 8V

60mA

150°C (TJ)

Surface Mount

SOT-86

86 Plastic

PN5179

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 12V TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA)

库存4,496

12V

2GHz

5dB @ 200MHz

15dB

350mW

25 @ 3mA, 1V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

AT-41533-TR1

Broadcom Limited

IC TRANS NPN GP BIPOLAR SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz
Gain: 9dB ~ 14.5dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

封装: TO-236-3, SC-59, SOT-23-3

库存85,500

12V

-

1dB ~ 1.6dB @ 900MHz ~ 2.4GHz

9dB ~ 14.5dB

225mW

30 @ 5mA, 5V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

AT-32033-TR1

Broadcom Limited

IC TRANS NPN BIPOLAR SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
Gain: 11dB ~ 12.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
Current - Collector (Ic) (Max): 32mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

封装: TO-236-3, SC-59, SOT-23-3

库存685,440

5.5V

-

1dB ~ 1.3dB @ 900MHz

11dB ~ 12.5dB

200mW

70 @ 2mA, 2.7V

32mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

BFQ591,115

NXP

TRANS NPN 15V 7GHZ SOT89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 2.25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

封装: TO-243AA

库存4,848

15V

7GHz

-

2.25W

60 @ 70mA, 8V

200mA

175°C (TJ)

Surface Mount

TO-243AA

SOT-89-3

PRF949,115

NXP

TRANSISTOR NPN 10V 9GHZ SOT416

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75

封装: SC-75, SOT-416

库存7,120

10V

9GHz

1.5dB ~ 2.5dB @ 1GHz

-

150mW

100 @ 5mA, 6V

50mA

150°C (TJ)

Surface Mount

SC-75, SOT-416

SC-75

BFG97,115

NXP

TRANS NPN 15V 5.5GHZ SOT223

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

封装: TO-261-4, TO-261AA

库存7,488

15V

5.5GHz

-

1W

25 @ 70mA, 10V

100mA

175°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BFR540,215

NXP

TRANS NPN 120MA 15V 9GHZ SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
Gain: -
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
Current - Collector (Ic) (Max): 120mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

封装: TO-236-3, SC-59, SOT-23-3

库存2,800

15V

9GHz

1.3dB ~ 2.4dB @ 900MHz

-

500mW

100 @ 40mA, 8V

120mA

175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

BFG93A,215

NXP

TRANS NPN 12V 35MA SOT143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.7dB ~ 2.3dB @ 1GHz ~ 2GHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

封装: TO-253-4, TO-253AA

库存4,992

12V

6GHz

1.7dB ~ 2.3dB @ 1GHz ~ 2GHz

-

300mW

40 @ 30mA, 5V

35mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

TAN500

Microsemi Corporation

TRANS RF BIPO 2500W 50A 55ST-1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 2500W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 50A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST
Supplier Device Package: 55ST

封装: 55ST

库存5,792

75V

960MHz ~ 1.215GHz

-

9dB

2500W

20 @ 1A, 5V

50A

200°C (TJ)

Chassis Mount

55ST

HN3C10FUTE85LF

Toshiba Semiconductor and Storage

TRANSISTOR NPN US6

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: 6-TSSOP, SC-88, SOT-363

库存3,120

12V

7GHz

1.1dB @ 1GHz

11.5dB

200mW

80 @ 20mA, 10V

80mA

-

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

MRF321

M/A-Com Technology Solutions

TRANS RF NPN 33V 1.1A 244-04

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 33V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 13dB
Power - Max: 10W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 1.1A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 244-04
Supplier Device Package: 244-04, STYLE 1

封装: 244-04

库存5,840

33V

-

13dB

10W

20 @ 500mA, 5V

1.1A

-

Chassis Mount

244-04

244-04, STYLE 1

KSC1674YBU

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: -
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA)

库存57,534

20V

600MHz

3dB ~ 5dB @ 100MHz

-

250mW

120 @ 1mA, 6V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BFP760H6327XTSA1

Infineon Technologies

TRANSISTOR RF NPN AMP SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz
Gain: 16.5dB ~ 29dB
Power - Max: 240mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 35mA, 3V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

封装: SC-82A, SOT-343

库存22,542

4V

45GHz

0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz

16.5dB ~ 29dB

240mW

160 @ 35mA, 3V

70mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

BFY90

Central Semiconductor Corp

TRANS NPN 30V TO72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 5.5dB @ 800MHz
Gain: 23dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

封装: TO-206AF, TO-72-4 Metal Can

库存14,844

15V

1.4GHz

5.5dB @ 800MHz

23dB

200mW

20 @ 25mA, 1V

25mA

-65°C ~ 200°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

2SC4308TZ-E

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 2.5GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

封装: -

Request a Quote

20V

2.5GHz

-

600mW

50 @ 50mA, 5V

300mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

MS2275

Microsemi Corporation

TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

2SC5336-AZ

CEL

RF TRANS NPN 12V 6.5GHZ SOT89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Gain: 12dB
Power - Max: 1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: -

封装: -

Request a Quote

12V

6.5GHz

1.8dB @ 1GHz

12dB

1.2W

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-243AA

-

2SC5337-AZ

CEL

RF TRANS NPN 15V SOT89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 2dB @ 1GHz
Gain: 8.3dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: -

封装: -

Request a Quote

15V

-

2dB @ 1GHz

8.3dB

2W

60 @ 50mA, 10V

250mA

150°C (TJ)

Surface Mount

TO-243AA

-

MT3S113-TE85L-F

Toshiba Semiconductor and Storage

RF TRANS NPN 5.3V 12.5GHZ SMINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.3V
Frequency - Transition: 12.5GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Gain: 11.8dB
Power - Max: 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

封装: -

库存8,601

5.3V

12.5GHz

1.45dB @ 1GHz

11.8dB

800mW

200 @ 30mA, 5V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

S-Mini

2SC4536-AZ

CEL

RF TRANS NPN 15V SOT89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 2dB @ 1GHz
Gain: 7.2dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 10V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

封装: -

Request a Quote

15V

-

2dB @ 1GHz

7.2dB

2W

60 @ 50mA, 10V

250mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

NTE316

NTE Electronics, Inc

RF TRANS NPN 15V 1.4GHZ TO72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 15dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

封装: -

Request a Quote

15V

1.4GHz

4.5dB @ 450MHz

15dB

200mW

25 @ 2mA, 5V

50mA

-

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

NTE295

NTE Electronics, Inc

RF TRANS NPN 75V 250MHZ TO126

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: 250MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 750mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

封装: -

Request a Quote

75V

250MHz

-

750mW

60 @ 500mA, 5V

1A

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

MPSH10-AP

Micro Commercial Co

TRANSISTOR TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92

封装: -

Request a Quote

25V

650MHz

-

350mW

60 @ 4mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92