页 47 - 晶体管 - 双极 (BJT) - 射频 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFP450E6433BTMA1	Infineon Technologies	TRANSISTOR NPN RF 4.5V SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 24GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 15.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	封装: SC-82A, SOT-343	库存2,384	5V	24GHz	1.25dB @ 1.8GHz	15.5dB	450mW	60 @ 50mA, 4V	100mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
NE67718-T1-A	CEL	RF TRANSISTOR NPN SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 15GHz Noise Figure (dB Typ @ f): 1.7dB @ 2GHz Gain: 15dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	封装: SC-82A, SOT-343	库存6,128	6V	15GHz	1.7dB @ 2GHz	15dB	200mW	75 @ 20mA, 3V	50mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
MS2321	Microsemi Corporation	TRANS RF BIPO 87.5W 1.5A M104 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 87.5W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 1.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M105 Supplier Device Package: M105	封装: M105	库存2,768	65V	1.025GHz ~ 1.15GHz	-	10dB	87.5W	-	1.5A	200°C (TJ)	Chassis Mount	M105	M105
2225-4L	Microsemi Corporation	TRANS RF BIPO 10W 600MA 55LV1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 2.2GHz ~ 2.5GHz Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 10W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V Current - Collector (Ic) (Max): 600mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55LV Supplier Device Package: 55LV	封装: 55LV	库存3,712	40V	2.2GHz ~ 2.5GHz	-	8.5dB	10W	20 @ 200mA, 5V	600mA	200°C (TJ)	Chassis Mount	55LV	55LV
NE68030-T1-R45-A	CEL	RF TRANSISTOR NPN SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Gain: 9.4dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封装: SC-70, SOT-323	库存2,720	10V	10GHz	1.9dB @ 2GHz	9.4dB	150mW	125 @ 5mA, 3V	35mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
MRF555T	Microsemi Corporation	TRANS NPN 16V 500MA POWERMACRO Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 11dB ~ 12.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: Power Macro Supplier Device Package: Power Macro	封装: Power Macro	库存2,192	16V	-	-	11dB ~ 12.5dB	3W	50 @ 100mA, 5V	500mA	-	Surface Mount	Power Macro	Power Macro
PN3563_D74Z	Fairchild/ON Semiconductor	TRANS RF NPN 15V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.5GHz Noise Figure (dB Typ @ f): - Gain: 14dB ~ 26dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	库存7,088	15V	1.5GHz	-	14dB ~ 26dB	350mW	20 @ 8mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BF959ZL1	ON Semiconductor	TRANS RF NPN 20V 100MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Gain: - Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	库存6,416	20V	700MHz	3dB @ 200MHz	-	625mW	40 @ 20mA, 10V	100mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BFG590,215	NXP	TRANS NPN 15V 200MA SOT143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	封装: TO-253-4, TO-253AA	库存7,632	15V	5GHz	-	-	400mW	60 @ 70mA, 8V	200mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
NESG2030M04-A	CEL	TRANS NPN 2GHZ SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.3V Frequency - Transition: 60GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.1dB @ 2GHz Gain: 16dB Power - Max: 80mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: M04	封装: SOT-343F	库存3,408	2.3V	60GHz	0.9dB ~ 1.1dB @ 2GHz	16dB	80mW	200 @ 5mA, 2V	35mA	150°C (TJ)	Surface Mount	SOT-343F	M04
CA3127M	Intersil	TRANSISTOR ARRAY NPN 16-SOIC Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.15GHz Noise Figure (dB Typ @ f): 3.5dB @ 100MHz Gain: 27dB ~ 30dB Power - Max: 85mW DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封装: 16-SOIC (0.154", 3.90mm Width)	库存3,536	15V	1.15GHz	3.5dB @ 100MHz	27dB ~ 30dB	85mW	35 @ 5mA, 6V	20mA	150°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
KSC2786YTA	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 20MA TO-92S Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Gain: 18dB ~ 22dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads) Supplier Device Package: TO-92S	封装: TO-226-3, TO-92-3 Short Body (Formed Leads)	库存6,928	20V	600MHz	3dB ~ 5dB @ 100MHz	18dB ~ 22dB	250mW	120 @ 1mA, 6V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Short Body (Formed Leads)	TO-92S
BF494_D74Z	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 20V TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	库存3,824	20V	-	-	-	350mW	67 @ 1mA, 10V	30mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
MPSH17	ON Semiconductor	TRANS NPN RF SS 15V TO92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): 6dB @ 200MHz Gain: 24dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 (TO-226AA)	库存36,000	15V	800MHz	6dB @ 200MHz	24dB	350mW	25 @ 5mA, 10V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BFM520,115	NXP	TRANS NPN DUAL 70MA 8V 6TSSOP Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Current - Collector (Ic) (Max): 70mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封装: 6-TSSOP, SC-88, SOT-363	库存7,584	8V	9GHz	1.2dB ~ 2.1dB @ 900MHz	-	1W	60 @ 20mA, 6V	70mA	175°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
1214-300	Microsemi Corporation	TRANS RF BIPO 88W 4A 55KT Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 88W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	封装: 55KT	库存4,368	50V	1.2GHz ~ 1.4GHz	-	7dB	88W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	55KT	55KT
UTV005	Microsemi Corporation	TRANS RF BIPO 8W 750MA 55FT-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 24V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 11dB Power - Max: 8W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 750mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	封装: 55FT	库存7,296	24V	470MHz ~ 860MHz	-	11dB	8W	20 @ 100mA, 5V	750mA	200°C (TJ)	Chassis, Stud Mount	55FT	55FT
AT-32033-BLKG	Broadcom Limited	TRANS NPN BIPO 5.5V 32MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz Gain: 11dB ~ 12.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V Current - Collector (Ic) (Max): 32mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	封装: TO-236-3, SC-59, SOT-23-3	库存7,584	5.5V	-	1dB ~ 1.3dB @ 900MHz	11dB ~ 12.5dB	200mW	70 @ 2mA, 2.7V	32mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
BFU530WF	NXP	TRANS RF NPN 12V 40MA SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 12.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V Current - Collector (Ic) (Max): 40mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	封装: SC-70, SOT-323	库存6,752	12V	11GHz	1.1dB @ 1.8GHz	12.5dB	450mW	60 @ 10mA, 8V	40mA	-40°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
NSVMMBTH10LT1G	ON Semiconductor	TRANS SS VHF MIXER NPN 25V SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	封装: TO-236-3, SC-59, SOT-23-3	库存5,504	25V	650MHz	-	-	225mW	60 @ 4mA, 10V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
PH1090-175L	M/A-Com Technology Solutions	TRANSISTOR BIPOLAR 175W 1090MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 80V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8.58dB Power - Max: 188W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 10.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	封装: -	库存3,904	80V	-	-	8.58dB	188W	-	10.5A	200°C (TJ)	Chassis Mount	-	-
2N3866	Central Semiconductor Corp	TRANS RF NPN 30V 400MA TO-39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	封装: TO-205AD, TO-39-3 Metal Can	库存32,508	30V	500MHz	-	-	5W	10 @ 50mA, 5V	400mA	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
MMBTH10LT1G	ON Semiconductor	TRANS SS VHF MIXER NPN 25V SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	封装: TO-236-3, SC-59, SOT-23-3	库存2,540,220	25V	650MHz	-	-	225mW	60 @ 4mA, 10V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
4MP10CH-TL-E	onsemi	BIP NPN 0.1A 200V Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 200V Frequency - Transition: 400MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-96 Supplier Device Package: 3-CPH	封装: -	Request a Quote	200V	400MHz	-	-	600mW	60 @ 10mA, 10V	100mA	-	Surface Mount	SC-96	3-CPH
2SC5455-A	CEL	RF TRANS NPN 6V 12GHZ SOT143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 10dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: -	封装: -	Request a Quote	6V	12GHz	1.5dB @ 2GHz	10dB	200mW	75 @ 30mA, 3V	100mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	-
SS9018HBU-FS	Fairchild Semiconductor	RF 0.05A, VERY HIGH FREQUENCY BA Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 28 @ 1mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封装: -	Request a Quote	15V	1.1GHz	-	-	400mW	28 @ 1mA, 5V	50mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
NTE77	NTE Electronics, Inc	RF TRANS NPN 30V 1.8GHZ TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 1.8GHz Noise Figure (dB Typ @ f): 2.7dB ~ 7dB @ 200MHz ~ 216MHz Gain: 7.2dB Power - Max: 3.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 15V Current - Collector (Ic) (Max): 400mA Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	封装: -	Request a Quote	30V	1.8GHz	2.7dB ~ 7dB @ 200MHz ~ 216MHz	7.2dB	3.5W	30 @ 50mA, 15V	400mA	200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
PH1214-220M	MACOM Technology Solutions	TRANSISTOR,220W,1.2-1.4GHZ,150US Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7.4dB Power - Max: 700W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 21A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 2L-FLG Supplier Device Package: 2L-FLG	封装: -	Request a Quote	70V	1.4GHz	-	7.4dB	700W	-	21A	200°C (TJ)	Chassis Mount	2L-FLG	2L-FLG
MAPR-001090-350S00	MACOM Technology Solutions	TRANSISTOR,350WPK,1.09GHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 1100W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 25A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 2L-FLG Supplier Device Package: 2L-FLG	封装: -	Request a Quote	65V	-	-	9dB	1100W	-	25A	200°C (TJ)	Chassis Mount	2L-FLG	2L-FLG
MSC1450A	Microsemi Corporation	RF TRANS 65V M216 Transistor Type: - Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 910W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 28A Operating Temperature: 250°C Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	封装: -	Request a Quote	65V	-	-	7dB	910W	15 @ 1A, 5V	28A	250°C	Chassis Mount	M216	M216

BFP450E6433BTMA1

Infineon Technologies

TRANSISTOR NPN RF 4.5V SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Gain: 15.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

封装: SC-82A, SOT-343

库存2,384

5V

24GHz

1.25dB @ 1.8GHz

15.5dB

450mW

60 @ 50mA, 4V

100mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

NE67718-T1-A

CEL

RF TRANSISTOR NPN SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Gain: 15dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

封装: SC-82A, SOT-343

库存6,128

6V

15GHz

1.7dB @ 2GHz

15dB

200mW

75 @ 20mA, 3V

50mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

MS2321

Microsemi Corporation

TRANS RF BIPO 87.5W 1.5A M104

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 87.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 1.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M105
Supplier Device Package: M105

封装: M105

库存2,768

65V

1.025GHz ~ 1.15GHz

-

10dB

87.5W

-

1.5A

200°C (TJ)

Chassis Mount

M105

2225-4L

Microsemi Corporation

TRANS RF BIPO 10W 600MA 55LV1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 2.2GHz ~ 2.5GHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB
Power - Max: 10W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Current - Collector (Ic) (Max): 600mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55LV
Supplier Device Package: 55LV

封装: 55LV

库存3,712

40V

2.2GHz ~ 2.5GHz

-

8.5dB

10W

20 @ 200mA, 5V

600mA

200°C (TJ)

Chassis Mount

55LV

NE68030-T1-R45-A

CEL

RF TRANSISTOR NPN SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
Gain: 9.4dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封装: SC-70, SOT-323

库存2,720

10V

10GHz

1.9dB @ 2GHz

9.4dB

150mW

125 @ 5mA, 3V

35mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

MRF555T

Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 11dB ~ 12.5dB
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Power Macro
Supplier Device Package: Power Macro

封装: Power Macro

库存2,192

16V

-

11dB ~ 12.5dB

3W

50 @ 100mA, 5V

500mA

-

Surface Mount

Power Macro

PN3563_D74Z

Fairchild/ON Semiconductor

TRANS RF NPN 15V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.5GHz
Noise Figure (dB Typ @ f): -
Gain: 14dB ~ 26dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

库存7,088

15V

1.5GHz

-

14dB ~ 26dB

350mW

20 @ 8mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BF959ZL1

ON Semiconductor

TRANS RF NPN 20V 100MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: -
Power - Max: 625mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

库存6,416

20V

700MHz

3dB @ 200MHz

-

625mW

40 @ 20mA, 10V

100mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BFG590,215

NXP

TRANS NPN 15V 200MA SOT143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

封装: TO-253-4, TO-253AA

库存7,632

15V

5GHz

-

400mW

60 @ 70mA, 8V

200mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

NESG2030M04-A

CEL

TRANS NPN 2GHZ SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.3V
Frequency - Transition: 60GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.1dB @ 2GHz
Gain: 16dB
Power - Max: 80mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: M04

封装: SOT-343F

库存3,408

2.3V

60GHz

0.9dB ~ 1.1dB @ 2GHz

16dB

80mW

200 @ 5mA, 2V

35mA

150°C (TJ)

Surface Mount

SOT-343F

M04

CA3127M

Intersil

TRANSISTOR ARRAY NPN 16-SOIC

Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.15GHz
Noise Figure (dB Typ @ f): 3.5dB @ 100MHz
Gain: 27dB ~ 30dB
Power - Max: 85mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

封装: 16-SOIC (0.154", 3.90mm Width)

库存3,536

15V

1.15GHz

3.5dB @ 100MHz

27dB ~ 30dB

85mW

35 @ 5mA, 6V

20mA

150°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

KSC2786YTA

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92S

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: 18dB ~ 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Supplier Device Package: TO-92S

封装: TO-226-3, TO-92-3 Short Body (Formed Leads)

库存6,928

20V

600MHz

3dB ~ 5dB @ 100MHz

18dB ~ 22dB

250mW

120 @ 1mA, 6V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Short Body (Formed Leads)

TO-92S

BF494_D74Z

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 20V TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

库存3,824

20V

-

350mW

67 @ 1mA, 10V

30mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

MPSH17

ON Semiconductor

TRANS NPN RF SS 15V TO92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 6dB @ 200MHz
Gain: 24dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA)

库存36,000

15V

800MHz

6dB @ 200MHz

24dB

350mW

25 @ 5mA, 10V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BFM520,115

NXP

TRANS NPN DUAL 70MA 8V 6TSSOP

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封装: 6-TSSOP, SC-88, SOT-363

库存7,584

8V

9GHz

1.2dB ~ 2.1dB @ 900MHz

-

1W

60 @ 20mA, 6V

70mA

175°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

1214-300

Microsemi Corporation

TRANS RF BIPO 88W 4A 55KT

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 88W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KT
Supplier Device Package: 55KT

封装: 55KT

库存4,368

50V

1.2GHz ~ 1.4GHz

-

7dB

88W

20 @ 500mA, 5V

4A

200°C (TJ)

Chassis Mount

55KT

UTV005

Microsemi Corporation

TRANS RF BIPO 8W 750MA 55FT-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 24V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): -
Gain: 11dB
Power - Max: 8W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
Current - Collector (Ic) (Max): 750mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT

封装: 55FT

库存7,296

24V

470MHz ~ 860MHz

-

11dB

8W

20 @ 100mA, 5V

750mA

200°C (TJ)

Chassis, Stud Mount

55FT

AT-32033-BLKG

Broadcom Limited

TRANS NPN BIPO 5.5V 32MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
Gain: 11dB ~ 12.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
Current - Collector (Ic) (Max): 32mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

封装: TO-236-3, SC-59, SOT-23-3

库存7,584

5.5V

-

1dB ~ 1.3dB @ 900MHz

11dB ~ 12.5dB

200mW

70 @ 2mA, 2.7V

32mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

BFU530WF

NXP

TRANS RF NPN 12V 40MA SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 12.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

封装: SC-70, SOT-323

库存6,752

12V

11GHz

1.1dB @ 1.8GHz

12.5dB

450mW

60 @ 10mA, 8V

40mA

-40°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

NSVMMBTH10LT1G

ON Semiconductor

TRANS SS VHF MIXER NPN 25V SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

封装: TO-236-3, SC-59, SOT-23-3

库存5,504

25V

650MHz

-

225mW

60 @ 4mA, 10V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

PH1090-175L

M/A-Com Technology Solutions

TRANSISTOR BIPOLAR 175W 1090MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 80V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 8.58dB
Power - Max: 188W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 10.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

封装: -

库存3,904

80V

-

8.58dB

188W

-

10.5A

200°C (TJ)

Chassis Mount

-

2N3866

Central Semiconductor Corp

TRANS RF NPN 30V 400MA TO-39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

封装: TO-205AD, TO-39-3 Metal Can

库存32,508

30V

500MHz

-

5W

10 @ 50mA, 5V

400mA

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

MMBTH10LT1G

ON Semiconductor

TRANS SS VHF MIXER NPN 25V SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

封装: TO-236-3, SC-59, SOT-23-3

库存2,540,220

25V

650MHz

-

225mW

60 @ 4mA, 10V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

4MP10CH-TL-E

onsemi

BIP NPN 0.1A 200V

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 200V
Frequency - Transition: 400MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-96
Supplier Device Package: 3-CPH

封装: -

Request a Quote

200V

400MHz

-

600mW

60 @ 10mA, 10V

100mA

-

Surface Mount

SC-96

3-CPH

2SC5455-A

CEL

RF TRANS NPN 6V 12GHZ SOT143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 10dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: -

封装: -

Request a Quote

6V

12GHz

1.5dB @ 2GHz

10dB

200mW

75 @ 30mA, 3V

100mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

-

SS9018HBU-FS

Fairchild Semiconductor

RF 0.05A, VERY HIGH FREQUENCY BA

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 28 @ 1mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封装: -

Request a Quote

15V

1.1GHz

-

400mW

28 @ 1mA, 5V

50mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

NTE77

NTE Electronics, Inc

RF TRANS NPN 30V 1.8GHZ TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 1.8GHz
Noise Figure (dB Typ @ f): 2.7dB ~ 7dB @ 200MHz ~ 216MHz
Gain: 7.2dB
Power - Max: 3.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 15V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

封装: -

Request a Quote

30V

1.8GHz

2.7dB ~ 7dB @ 200MHz ~ 216MHz

7.2dB

3.5W

30 @ 50mA, 15V

400mA

200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

PH1214-220M

MACOM Technology Solutions

TRANSISTOR,220W,1.2-1.4GHZ,150US

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7.4dB
Power - Max: 700W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 21A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 2L-FLG
Supplier Device Package: 2L-FLG

封装: -

Request a Quote

70V

1.4GHz

-

7.4dB

700W

-

21A

200°C (TJ)

Chassis Mount

2L-FLG

MAPR-001090-350S00

MACOM Technology Solutions

TRANSISTOR,350WPK,1.09GHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 1100W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 25A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 2L-FLG
Supplier Device Package: 2L-FLG

封装: -

Request a Quote

65V

-

9dB

1100W

-

25A

200°C (TJ)

Chassis Mount

2L-FLG

MSC1450A

Microsemi Corporation

RF TRANS 65V M216

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 910W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 28A
Operating Temperature: 250°C
Mounting Type: Chassis Mount
Package / Case: M216
Supplier Device Package: M216

封装: -

Request a Quote

65V

-

7dB

910W

15 @ 1A, 5V

28A

250°C

Chassis Mount

M216