页 52 - Toshiba Semiconductor and Storage 产品 | 深圳黑森尔电子
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Toshiba Semiconductor and Storage 产品

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2SK2989,T6F(J
Toshiba Semiconductor and Storage

MOSFET N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92MOD
  • Package / Case: TO-226-3, TO-92-3 Long Body
封装: TO-226-3, TO-92-3 Long Body
库存3,648
2SD2206A(T6SEP,F,M
Toshiba Semiconductor and Storage

TRANS NPN 2A 120V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
  • Power - Max: 900mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封装: TO-226-3, TO-92-3 Long Body
库存4,384
2SB1457(TE6,F,M)
Toshiba Semiconductor and Storage

TRANS PNP 2A 100V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封装: TO-226-3, TO-92-3 Long Body
库存2,160
2SA1428-Y,T2F(J
Toshiba Semiconductor and Storage

TRANS PNP 2A 50V SC71

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-71
  • Supplier Device Package: MSTM
封装: SC-71
库存5,072
RN2707JE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ESV

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV
封装: SOT-553
库存3,696
RN2510(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SMV

  • Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
封装: SC-74A, SOT-753
库存22,548
RN1907,LF(CT
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
封装: 6-TSSOP, SC-88, SOT-363
库存2,100
TA78L075AP,F(J
Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 150mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -30°C ~ 85°C
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
封装: TO-226-3, TO-92-3 Long Body
库存5,344
TA58L05S,ALPSAQ(M
Toshiba Semiconductor and Storage

IC REG LINEAR 250MA 3HSIP

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 250mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: 3-HSIP
封装: TO-220-3 Full Pack
库存2,032
TCR2DG28,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 2.8V 200MA 4WCSP

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 2.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 200mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 70µA
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA, WLCSP
  • Supplier Device Package: 4-WCSP (0.79x0.79)
封装: 4-XFBGA, WLCSP
库存26,082
TBD62084APG
Toshiba Semiconductor and Storage

IC LOAD SWITCH 8CH 0.5A 18DIP

  • Switch Type: General Purpose
  • Number of Outputs: 8
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 50V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 2.8A
  • Rds On (Typ): -
  • Input Type: Inverting
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 18-DIP (0.300", 7.62mm)
  • Supplier Device Package: 18-DIP
封装: 18-DIP (0.300", 7.62mm)
库存7,992
74LCX573FT(AJ)
Toshiba Semiconductor and Storage

X34 PB-F LCX TSSOP 20 CMOS LOGIC

  • Logic Type: D-Type Latch
  • Circuit: 8:8
  • Output Type: Tri-State
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Independent Circuits: 1
  • Delay Time - Propagation: 8ns
  • Current - Output High, Low: 24mA, 24mA
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 20-TSSOPB
封装: 20-TSSOP (0.173", 4.40mm Width)
库存48,420
TC7SZ00FE,LJ(CT
Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP ESV

  • Logic Type: NAND Gate
  • Number of Circuits: 1
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 1.65 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 32mA, 32mA
  • Logic Level - Low: -
  • Logic Level - High: -
  • Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: ESV
  • Package / Case: SOT-553
封装: SOT-553
库存31,782
TC74VHC174FTELM
Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 16TSSOP

  • Function: Master Reset
  • Type: D-Type
  • Output Type: Non-Inverted
  • Number of Elements: 1
  • Number of Bits per Element: 6
  • Clock Frequency: 120MHz
  • Max Propagation Delay @ V, Max CL: 9.2ns @ 5V, 50pF
  • Trigger Type: Positive Edge
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 2 V ~ 5.5 V
  • Current - Quiescent (Iq): 4µA
  • Input Capacitance: 4pF
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
封装: 16-TSSOP (0.173", 4.40mm Width)
库存5,888
TC74LVX240FTEL
Toshiba Semiconductor and Storage

IC INVERTER DUAL 4-INPUT 20TSSOP

  • Logic Type: Buffer, Inverting
  • Number of Elements: 2
  • Number of Bits per Element: 4
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 4mA, 4mA
  • Voltage - Supply: 2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 20-TSSOP
封装: 20-TSSOP (0.173", 4.40mm Width)
库存5,008
TC75W56FU,LF
Toshiba Semiconductor and Storage

IC COMP GP CMOS DUAL SM8

  • Type: General Purpose
  • Number of Elements: 2
  • Output Type: Push-Pull
  • Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
  • Voltage - Input Offset (Max): 7mV @ 5V
  • Current - Input Bias (Max): 1pA @ 5V
  • Current - Output (Typ): 25mA
  • Current - Quiescent (Max): 40µA
  • CMRR, PSRR (Typ): -
  • Propagation Delay (Max): 680ns
  • Hysteresis: -
  • Operating Temperature: -40°C ~ 85°C
  • Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SM8
封装: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
库存5,328
TD62308AFG,S,EL
Toshiba Semiconductor and Storage

IC DRIVER DARL SNK 16HSOP

  • Type: Driver
  • Protocol: -
  • Number of Drivers/Receivers: 4/0
  • Duplex: -
  • Receiver Hysteresis: -
  • Data Rate: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
  • Supplier Device Package: 16-HSOP
封装: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
库存7,200
TLP176A(F)
Toshiba Semiconductor and Storage

PHOTOCOUPLER GAAS IRED/FET 4-SOP

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 2 Ohm
  • Load Current: 400mA
  • Voltage - Input: 1.15VDC
  • Voltage - Load: 0 ~ 60 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 4-SOP (0.173", 4.40mm)
  • Supplier Device Package: 4-SOP (2.54mm)
  • Relay Type: Relay
封装: 4-SOP (0.173", 4.40mm)
库存8,724
TLP292-4(4LGBTRE
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

  • Number of Channels: 4
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 100% @ 500µA
  • Current Transfer Ratio (Max): 600% @ 500µA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.179", 4.55mm Width)
  • Supplier Device Package: 16-SO
封装: 16-SOIC (0.179", 4.55mm Width)
库存5,310
TBD62786AFWG,EL
Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

  • Switch Type: -
  • Number of Outputs: -
  • Ratio - Input:Output: -
  • Output Configuration: -
  • Output Type: -
  • Interface: -
  • Voltage - Load: -
  • Voltage - Supply (Vcc/Vdd): -
  • Current - Output (Max): -
  • Rds On (Typ): -
  • Input Type: -
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -
  • Package / Case: 18-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 18-SOP
封装: 18-SOIC (0.295", 7.50mm Width)
库存16,944
TB67H450FNG,EL
Toshiba Semiconductor and Storage

3A/50V 1CH BRUSHED

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver
  • Output Configuration: Half Bridge
  • Interface: -
  • Technology: -
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 3.5A
  • Voltage - Supply: -
  • Voltage - Load: 4.5V ~ 44V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-HSOP
封装: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
库存2,224
TPN1200APL-L1Q
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 630mW (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.1x3.1)
  • Package / Case: 8-PowerVDFN
封装: -
库存17,007
TK1R5R04PB-LXGQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 160A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 205W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK+
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存5,937
2SA1162-Y-LXHF
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A SMINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 200 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
封装: -
库存53,166
CRS10I40A-TE85L-QM
Toshiba Semiconductor and Storage

DIODE GEN PURP 40V 1A S-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 60 µA @ 40 V
  • Capacitance @ Vr, F: 35pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: 150°C (Max)
封装: -
库存8,562
CMF02A-LQ-M
Toshiba Semiconductor and Storage

DIODE GEN PURP 600V 1A M-FLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: 150°C
封装: -
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TK8A25DA-S4X
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 3.8A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
封装: -
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7UL2G125FK-LF
Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 3.6V US8

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 1
  • Number of Bits per Element: 2
  • Input Type: -
  • Output Type: 3-State
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 0.9V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFSOP (0.091", 2.30mm Width)
  • Supplier Device Package: US8
封装: -
库存17,877
RN1911-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q TR NPNX2 BRT, Q1BSR=1

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
封装: -
库存18,000
RN1316-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 4.7 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
封装: -
Request a Quote