页 50 - Toshiba Semiconductor and Storage 产品

零件编号	制造商	描述	封装	库存
TK45P03M1,RQ(S	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 45A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 22.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存3,792
TPC6104(TE85L,F,M)	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 4.5A VS6 2-3T1A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 2.8A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-6 (2.9x2.8) Package / Case: SOT-23-6 Thin, TSOT-23-6	封装: SOT-23-6 Thin, TSOT-23-6	库存19,200
TPC8134,LQ(S	Toshiba Semiconductor and Storage	MOSFET P-CH 40V 5A 8SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 10V Vgs (Max): +20V, -25V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 52 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,736
SSM3K36MFV,L3F	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 500MA VESM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VESM Package / Case: SOT-723	封装: SOT-723	库存568,950
2SD2406-Y(F)	Toshiba Semiconductor and Storage	TRANS NPN 80V 4A TO220NIS Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A Current - Collector Cutoff (Max): 30µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V Power - Max: 25W Frequency - Transition: 8MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	封装: TO-220-3 Full Pack	库存7,280
2SA1312-BL(TE85L,F	Toshiba Semiconductor and Storage	TRANS PNP 120V 0.1A S-MINI Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	封装: TO-236-3, SC-59, SOT-23-3	库存237,066
HN2A01FE-GR(TE85LF	Toshiba Semiconductor and Storage	TRANS 2PNP 50V 0.15A ES6 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 800MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封装: SOT-563, SOT-666	库存2,176
RN4984FE,LF(CB	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.1W ES6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封装: SOT-563, SOT-666	库存2,800
CCS15S30,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 1.5A CST2C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: 200pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: CST2C Operating Temperature - Junction: 125°C (Max)	封装: 2-SMD, No Lead	库存6,880
1SS308(TE85L,F	Toshiba Semiconductor and Storage	DIODE ARRAY GP 80V 100MA SC74A Diode Configuration: 4 Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Operating Temperature - Junction: 125°C (Max) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SC-74A, 5-Mini Mold	封装: SC-74A, SOT-753	库存5,808
TA58M06S,MTDQ(M	Toshiba Semiconductor and Storage	IC REG LINEAR 500MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 105°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: LSTM	封装: TO-220-3 Full Pack	库存7,392
TCR2EN34,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 3.4V 200MA 4-SDFN Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.4V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 60µA PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	封装: 4-XFDFN Exposed Pad	库存95,448
TC7WB66CFK,LF	Toshiba Semiconductor and Storage	IC DUAL BUS SWITCH US8 Type: Bus Switch Circuit: 2 x 1:1 Independent Circuits: 1 Current - Output High, Low: - Voltage Supply Source: Single Supply Voltage - Supply: 1.65 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Supplier Device Package: US8	封装: 8-VFSOP (0.091", 2.30mm Width)	库存7,632
TC74LCX540FT(EL,M)	Toshiba Semiconductor and Storage	IC INVERTER 8-INPUT 20TSSOP Logic Type: Buffer, Inverting Number of Elements: 1 Number of Bits per Element: 8 Input Type: - Output Type: Push-Pull Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	封装: 20-TSSOP (0.173", 4.40mm Width)	库存4,784
74LCX245FT(AE)	Toshiba Semiconductor and Storage	IC BUS TRANSCEIVER 8BIT 20TSSOP Logic Type: Transceiver, Non-Inverting Number of Elements: 1 Number of Bits per Element: 8 Input Type: - Output Type: Push-Pull Current - Output High, Low: 24mA, 24mA Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	封装: 20-TSSOP (0.173", 4.40mm Width)	库存5,280
TL1L2-NW0,L	Toshiba Semiconductor and Storage	LED LETERAS COOL WHT 5000K 2SMD Color: White, Cool CCT (K): 5000K Flux @ 85°C, Current - Test: - Flux @ 25°C, Current - Test: 133 lm (120 lm ~ 145 lm) Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.85V Lumens/Watt @ Current - Test: 133 lm/W CRI (Color Rendering Index): 70 Current - Max: 1A Viewing Angle: 120° Mounting Type: Surface Mount Package / Case: 1414 (3535 Metric) Supplier Device Package: 3535 Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm) Height - Seated (Max): 0.080" (2.03mm)	封装: 1414 (3535 Metric)	库存6,714
DF3D6.8MFV(TL3,T)	Toshiba Semiconductor and Storage	TVS DIODE 5VWM 15VC VESM Type: Steering (Rail to Rail) Unidirectional Channels: 2 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5V (Max) Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 15V (Typ) Current - Peak Pulse (10/1000µs): 1A (8/20µs) Power - Peak Pulse: - Power Line Protection: Yes Applications: General Purpose Capacitance @ Frequency: 0.5pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	封装: SOT-723	库存4,428
TLP3546(F)	Toshiba Semiconductor and Storage	PHOTOCOUPLER PHOTORELAY 6-DIP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 200 mOhm Load Current: 2A Voltage - Input: 1.33VDC Voltage - Load: 0 ~ 100 V Mounting Type: Through Hole Termination Style: PC Pin Package / Case: 6-DIP (0.300", 7.62mm) Supplier Device Package: 6-DIP Relay Type: Relay	封装: 6-DIP (0.300", 7.62mm)	库存7,188
TLP290-4(GB-TP,E)	Toshiba Semiconductor and Storage	OPTOISOLTR 2.5KV 4CH TRANS 16-SO Number of Channels: 4 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 400% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.2V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	封装: 16-SOIC (0.179", 4.55mm Width)	库存5,238
TB6585FG,8,EL	Toshiba Semiconductor and Storage	BRUSHLESS MOTOR DRIVER IC, SENSO Motor Type - Stepper: - Motor Type - AC, DC: - Function: - Output Configuration: - Interface: - Technology: - Step Resolution: - Applications: - Current - Output: - Voltage - Supply: - Voltage - Load: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,368
74HCT02D	Toshiba Semiconductor and Storage	IC GATE NOR 4CH 2-INP 14SOIC Logic Type: NOR Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 4.5 V ~ 5.5 V Current - Quiescent (Max): 1µA Current - Output High, Low: 4mA, 4mA Logic Level - Low: 0.8V Logic Level - High: 2V Max Propagation Delay @ V, Max CL: 16ns @ 5.5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-SOIC Package / Case: 14-SOIC (0.154", 3.90mm Width)	封装: 14-SOIC (0.154", 3.90mm Width)	库存5,168
TC7SET34FU,LJ(CT	Toshiba Semiconductor and Storage	IC BUFFER NON-INVERT 5.5V USV Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	封装: 5-TSSOP, SC-70-5, SOT-353	库存4,960
TPH6R30ANL-L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 66A/45A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	封装: -	库存33,678
TJ60S06M3L-LXHQ	Toshiba Semiconductor and Storage	MOSFET P-CH 60V 60A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	库存2,115
TC78B011FTG-EL	Toshiba Semiconductor and Storage	3-PHASE BRUSHLESS MOTOR CONTROLL Motor Type - Stepper: Multiphase Motor Type - AC, DC: Brushless DC (BLDC) Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Pre-Driver - Half Bridge (3) Interface: I2C Technology: NMOS Step Resolution: - Applications: General Purpose Current - Output: 240mA Voltage - Supply: 5.5V ~ 27V Voltage - Load: - Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 36-WFQFN Exposed Pad Supplier Device Package: 36-WQFN (5x5)	封装: -	库存22,260
TJ200F04M3L-LXHQ	Toshiba Semiconductor and Storage	MOSFET P-CH 40V 200A TO220SM FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: TO-220SM(W) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote
TCR8BM085A-L3F	Toshiba Semiconductor and Storage	800MA LDO, VOUT=0.85V, DROPOUT=1 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 0.85V Voltage - Output (Max): - Voltage Dropout (Max): 0.215V @ 800mA Current - Output: 800mA Current - Quiescent (Iq): 36 µA Current - Supply (Max): - PSRR: - Control Features: Current Limit, Enable Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: 5-DFNB (1.2x1.2)	封装: -	库存29,826
RN4903-LF-CT	Toshiba Semiconductor and Storage	PNP + NPN BRT Q1BSR22KOHM Q1BER2 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: -	库存9,000
RN1711-LF	Toshiba Semiconductor and Storage	NPNX2 BRT Q1BSR10KOHM Q1BERINF.K Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	封装: -	库存9,000
TCR8BM30A-L3F	Toshiba Semiconductor and Storage	800MA LDO, VOUT=3.0V, DROPOUT=17 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3V Voltage - Output (Max): - Voltage Dropout (Max): 0.285V @ 800mA Current - Output: 800mA Current - Quiescent (Iq): 36 µA Current - Supply (Max): - PSRR: - Control Features: Current Limit, Enable Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: 5-DFNB (1.2x1.2)	封装: -	库存29,910

TK45P03M1,RQ(S

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 45A DPAK-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 22.5A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存3,792

TPC6104(TE85L,F,M)

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 4.5A VS6 2-3T1A

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 2.8A, 4.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: VS-6 (2.9x2.8)
Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

库存19,200

TPC8134,LQ(S

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 5A 8SOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 10V
Vgs (Max): +20V, -25V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 52 mOhm @ 2.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,736

SSM3K36MFV,L3F

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 500MA VESM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: VESM
Package / Case: SOT-723

封装: SOT-723

库存568,950

2SD2406-Y(F)

Toshiba Semiconductor and Storage

TRANS NPN 80V 4A TO220NIS

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A
Current - Collector Cutoff (Max): 30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 5V
Power - Max: 25W
Frequency - Transition: 8MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

封装: TO-220-3 Full Pack

库存7,280

2SA1312-BL(TE85L,F

Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A S-MINI

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 100MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

封装: TO-236-3, SC-59, SOT-23-3

库存237,066

HN2A01FE-GR(TE85LF

Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A ES6

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 800MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封装: SOT-563, SOT-666

库存2,176

RN4984FE,LF(CB

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封装: SOT-563, SOT-666

库存2,800

CCS15S30,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 1.5A CST2C

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: CST2C
Operating Temperature - Junction: 125°C (Max)

封装: 2-SMD, No Lead

库存6,880

1SS308(TE85L,F

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SC74A

Diode Configuration: 4 Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Operating Temperature - Junction: 125°C (Max)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SC-74A, 5-Mini Mold

封装: SC-74A, SOT-753

库存5,808

TA58M06S,MTDQ(M

Toshiba Semiconductor and Storage

IC REG LINEAR 500MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 500mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: LSTM

封装: TO-220-3 Full Pack

库存7,392

TCR2EN34,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 3.4V 200MA 4-SDFN

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.4V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 60µA
PSRR: 73dB (1kHz)
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

封装: 4-XFDFN Exposed Pad

库存95,448

TC7WB66CFK,LF

Toshiba Semiconductor and Storage

IC DUAL BUS SWITCH US8

Type: Bus Switch
Circuit: 2 x 1:1
Independent Circuits: 1
Current - Output High, Low: -
Voltage Supply Source: Single Supply
Voltage - Supply: 1.65 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Supplier Device Package: US8

封装: 8-VFSOP (0.091", 2.30mm Width)

库存7,632

TC74LCX540FT(EL,M)

Toshiba Semiconductor and Storage

IC INVERTER 8-INPUT 20TSSOP

Logic Type: Buffer, Inverting
Number of Elements: 1
Number of Bits per Element: 8
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

封装: 20-TSSOP (0.173", 4.40mm Width)

库存4,784

74LCX245FT(AE)

Toshiba Semiconductor and Storage

IC BUS TRANSCEIVER 8BIT 20TSSOP

Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 8
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

封装: 20-TSSOP (0.173", 4.40mm Width)

库存5,280

TL1L2-NW0,L

Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 5000K 2SMD

Color: White, Cool
CCT (K): 5000K
Flux @ 85°C, Current - Test: -
Flux @ 25°C, Current - Test: 133 lm (120 lm ~ 145 lm)
Current - Test: 350mA
Voltage - Forward (Vf) (Typ): 2.85V
Lumens/Watt @ Current - Test: 133 lm/W
CRI (Color Rendering Index): 70
Current - Max: 1A
Viewing Angle: 120°
Mounting Type: Surface Mount
Package / Case: 1414 (3535 Metric)
Supplier Device Package: 3535
Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
Height - Seated (Max): 0.080" (2.03mm)

封装: 1414 (3535 Metric)

库存6,714

DF3D6.8MFV(TL3,T)

Toshiba Semiconductor and Storage

TVS DIODE 5VWM 15VC VESM

Type: Steering (Rail to Rail)
Unidirectional Channels: 2
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5V (Max)
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V (Typ)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Power - Peak Pulse: -
Power Line Protection: Yes
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

封装: SOT-723

库存4,428

TLP3546(F)

Toshiba Semiconductor and Storage

PHOTOCOUPLER PHOTORELAY 6-DIP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 200 mOhm
Load Current: 2A
Voltage - Input: 1.33VDC
Voltage - Load: 0 ~ 100 V
Mounting Type: Through Hole
Termination Style: PC Pin
Package / Case: 6-DIP (0.300", 7.62mm)
Supplier Device Package: 6-DIP
Relay Type: Relay

封装: 6-DIP (0.300", 7.62mm)

库存7,188

TLP290-4(GB-TP,E)

Toshiba Semiconductor and Storage

OPTOISOLTR 2.5KV 4CH TRANS 16-SO

Number of Channels: 4
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Current Transfer Ratio (Max): 400% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.2V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Supplier Device Package: 16-SO

封装: 16-SOIC (0.179", 4.55mm Width)

库存5,238

TB6585FG,8,EL

Toshiba Semiconductor and Storage

BRUSHLESS MOTOR DRIVER IC, SENSO

Motor Type - Stepper: -
Motor Type - AC, DC: -
Function: -
Output Configuration: -
Interface: -
Technology: -
Step Resolution: -
Applications: -
Current - Output: -
Voltage - Supply: -
Voltage - Load: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,368

74HCT02D

Toshiba Semiconductor and Storage

IC GATE NOR 4CH 2-INP 14SOIC

Logic Type: NOR Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 4.5 V ~ 5.5 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 4mA, 4mA
Logic Level - Low: 0.8V
Logic Level - High: 2V
Max Propagation Delay @ V, Max CL: 16ns @ 5.5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)

封装: 14-SOIC (0.154", 3.90mm Width)

库存5,168

TC7SET34FU,LJ(CT

Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 5.5V USV

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

封装: 5-TSSOP, SC-70-5, SOT-353

库存4,960

TPH6R30ANL-L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 66A/45A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

封装: -

库存33,678

TJ60S06M3L-LXHQ

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 60A DPAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V
Vgs (Max): +10V, -20V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存2,115

TC78B011FTG-EL

Toshiba Semiconductor and Storage

3-PHASE BRUSHLESS MOTOR CONTROLL

Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Pre-Driver - Half Bridge (3)
Interface: I2C
Technology: NMOS
Step Resolution: -
Applications: General Purpose
Current - Output: 240mA
Voltage - Supply: 5.5V ~ 27V
Voltage - Load: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 36-WFQFN Exposed Pad
Supplier Device Package: 36-WQFN (5x5)

封装: -

库存22,260

TJ200F04M3L-LXHQ

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 200A TO220SM

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Vgs (Max): +10V, -20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: TO-220SM(W)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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TCR8BM085A-L3F

Toshiba Semiconductor and Storage

800MA LDO, VOUT=0.85V, DROPOUT=1

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 0.85V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.215V @ 800mA
Current - Output: 800mA
Current - Quiescent (Iq): 36 µA
Current - Supply (Max): -
PSRR: -
Control Features: Current Limit, Enable
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XDFN Exposed Pad
Supplier Device Package: 5-DFNB (1.2x1.2)

封装: -

库存29,826

RN4903-LF-CT

Toshiba Semiconductor and Storage

PNP + NPN BRT Q1BSR22KOHM Q1BER2

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz, 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: -

库存9,000

RN1711-LF

Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR10KOHM Q1BERINF.K

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

封装: -

库存9,000

TCR8BM30A-L3F

Toshiba Semiconductor and Storage

800MA LDO, VOUT=3.0V, DROPOUT=17

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.285V @ 800mA
Current - Output: 800mA
Current - Quiescent (Iq): 36 µA
Current - Supply (Max): -
PSRR: -
Control Features: Current Limit, Enable
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XDFN Exposed Pad
Supplier Device Package: 5-DFNB (1.2x1.2)

封装: -

库存29,910