页 36 - Toshiba Semiconductor and Storage 产品

零件编号	制造商	描述	封装	库存
TPCA8018-H(TE12LQM	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 30A SOP-8 ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2846pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	封装: 8-PowerVDFN	库存5,504
TK3A60DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 2.5A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 1.3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存2,656
SSM3K15AMFV,L3F	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 0.1A U-MOS III FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VESM Package / Case: SOT-723	封装: SOT-723	库存1,276,044
SSM6K202FE,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 2.3A ES6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ES6 (1.6x1.6) Package / Case: SOT-563, SOT-666	封装: SOT-563, SOT-666	库存115,236
SSM3K37MFV,L3F	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 0.25A VESM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: VESM Package / Case: SOT-723	封装: SOT-723	库存342,000
2SD2695,T6F(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 60V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	封装: TO-226-3, TO-92-3 Long Body	库存6,096
2SC2235-Y(T6ND,AF	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	封装: TO-226-3, TO-92-3 Long Body	库存3,312
2SA1869-Y(Q,M)	Toshiba Semiconductor and Storage	TRANS PNP 3A 50V TO220-3 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 10W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	封装: TO-220-3 Full Pack	库存5,808
2SA1587-BL,LF	Toshiba Semiconductor and Storage	TRANS PNP 120V 0.1A USM Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 100MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	封装: SC-70, SOT-323	库存2,640
2SC4738-BL(TE85L,F	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.15A SSM Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	封装: SC-75, SOT-416	库存25,926
RN1502(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.3W SMV Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	封装: SC-74A, SOT-753	库存36,000
RN4990(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100µA (ICBO) Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: 6-TSSOP, SC-88, SOT-363	库存28,392
1SS361,LJ(CT	Toshiba Semiconductor and Storage	DIODE ARRAY GP 80V 100MA SSM Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Operating Temperature - Junction: 125°C (Max) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	封装: SC-75, SOT-416	库存28,032
TB67S213FTAG,EL	Toshiba Semiconductor and Storage	IC STEP MOTOR DRVR PAR 36WQFN Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: BiCDMOS Step Resolution: 1, 1/2, 1/4 Applications: General Purpose Current - Output: 2A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 35 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 36-WFQFN Exposed Pad Supplier Device Package: 36-WQFN (6x6)	封装: 36-WFQFN Exposed Pad	库存30,714
TC7USB31FK(TE85L,F	Toshiba Semiconductor and Storage	DUAL SPST USB SWITCH US8 Type: SPST Switches Circuit: 1 x 1:1 Independent Circuits: 2 Current - Output High, Low: - Voltage Supply Source: Single Supply Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Supplier Device Package: US8	封装: 8-VFSOP (0.091", 2.30mm Width)	库存46,710
TC74VHC02FTELM	Toshiba Semiconductor and Storage	IC GATE NOR 4CH 2-INP 14-TSSOP Logic Type: NOR Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5V Logic Level - High: 1.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	封装: 14-TSSOP (0.173", 4.40mm Width)	库存4,944
TC74ACT14FTEL	Toshiba Semiconductor and Storage	IC INVERTER HEX 14TSSOP Logic Type: Inverter Number of Circuits: 6 Number of Inputs: 6 Features: Schmitt Trigger Voltage - Supply: 4.5 V ~ 5.5 V Current - Quiescent (Max): 4µA Current - Output High, Low: 24mA, 24mA Logic Level - Low: 0.8V Logic Level - High: 2V Max Propagation Delay @ V, Max CL: 11.4ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	封装: 14-TSSOP (0.173", 4.40mm Width)	库存19,248
TC7SH08F,LJ(CT	Toshiba Semiconductor and Storage	IC GATE AND 1CH 2-INPUT SMV Logic Type: AND Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5V Logic Level - High: 1.5V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: SMV Package / Case: SC-74A, SOT-753	封装: SC-74A, SOT-753	库存22,926
DF3A5.6LFV(TPL3,Z)	Toshiba Semiconductor and Storage	TVS DIODE 3.5VWM VESM Type: Zener Unidirectional Channels: 2 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 3.5V Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 8pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	封装: SOT-723	库存2,088
DF2S6.8FS,L3M	Toshiba Semiconductor and Storage	TVS DIODE 5VWM 9VC SOD923 Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5V (Max) Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9V (Typ) Current - Peak Pulse (10/1000µs): 1A (8/20µs) Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 25pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOD-923 Supplier Device Package: SOD-923	封装: SOD-923	库存289,440
TLP176G(F)	Toshiba Semiconductor and Storage	PHOTOCOUPLER GAAS IRED/FET 4-SOP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 35 Ohm Load Current: 120mA Voltage - Input: 1.15VDC Voltage - Load: 0 ~ 350 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 4-SOP (0.173", 4.40mm) Supplier Device Package: 4-SOP (2.54mm) Relay Type: Relay	封装: 4-SOP (0.173", 4.40mm)	库存8,694
TLP172G(TP,F)	Toshiba Semiconductor and Storage	PHOTORELAY MOSFET OUT 4-SOP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 35 Ohm Load Current: 110mA Voltage - Input: 1.15VDC Voltage - Load: 0 ~ 350 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 4-SOP (0.173", 4.40mm) Supplier Device Package: 4-SOP (2.54mm) Relay Type: Relay	封装: 4-SOP (0.173", 4.40mm)	库存20,094
TLP719(TP,F)	Toshiba Semiconductor and Storage	OPTOISOLATOR 5KV TRANS 6-SDIP GW Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 20% @ 16mA Current Transfer Ratio (Max): - Turn On / Turn Off Time (Typ): 800ns, 800ns (Max) Rise / Fall Time (Typ): - Input Type: DC Output Type: Transistor Voltage - Output (Max): 20V Current - Output / Channel: 8mA Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 25mA Vce Saturation (Max): - Operating Temperature: -55°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.268", 6.80mm Width) Supplier Device Package: 6-SDIP Gull Wing	封装: 6-SOIC (0.268", 6.80mm Width)	库存5,472
TLP2366(V4-TPL,E	Toshiba Semiconductor and Storage	OPTOISO 3.75KV PSH PULL SO6-5 Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 20kV/µs Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 10mA Data Rate: 20MBd Propagation Delay tpLH / tpHL (Max): 40ns, 40ns Rise / Fall Time (Typ): 15ns, 15ns Voltage - Forward (Vf) (Typ): 1.61V Current - DC Forward (If) (Max): 25mA Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads Supplier Device Package: 6-SO, 5 Lead	封装: 6-SOIC (0.179", 4.55mm Width) 5 Leads	库存3,546
TK099V65Z-LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 30A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.27mA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 5-DFN (8x8) Package / Case: 4-VSFN Exposed Pad	封装: -	库存44,424
TCR2LN19-LF-SE	Toshiba Semiconductor and Storage	LDO REG VOUT=1.9V I=200MA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.9V Voltage - Output (Max): - Voltage Dropout (Max): 0.6V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 2 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	封装: -	库存30,000
RN1103-LXHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SSM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	封装: -	库存18,000
SSM3K62TU-LF	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 800MA UFM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 800mA, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Lead	封装: -	库存19,170
RN1711JE-TE85L-F	Toshiba Semiconductor and Storage	TRANSISTOR NPN X2 BRT Q1BSR10KOH Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	封装: -	库存12,000
CRS14-TE85L-Q-M	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 2A S-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 30 V Capacitance @ Vr, F: 90pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	封装: -	Request a Quote

TPCA8018-H(TE12LQM

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 30A SOP-8 ADV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2846pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 15A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

封装: 8-PowerVDFN

库存5,504

TK3A60DA(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 2.5A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 1.3A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存2,656

SSM3K15AMFV,L3F

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 0.1A U-MOS III

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 13.5pF @ 3V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: VESM
Package / Case: SOT-723

封装: SOT-723

库存1,276,044

SSM6K202FE,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 2.3A ES6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 4V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: ES6 (1.6x1.6)
Package / Case: SOT-563, SOT-666

封装: SOT-563, SOT-666

库存115,236

SSM3K37MFV,L3F

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 0.25A VESM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: VESM
Package / Case: SOT-723

封装: SOT-723

库存342,000

2SD2695,T6F(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 60V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

封装: TO-226-3, TO-92-3 Long Body

库存6,096

2SC2235-Y(T6ND,AF

Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 900mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

封装: TO-226-3, TO-92-3 Long Body

库存3,312

2SA1869-Y(Q,M)

Toshiba Semiconductor and Storage

TRANS PNP 3A 50V TO220-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 10W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

封装: TO-220-3 Full Pack

库存5,808

2SA1587-BL,LF

Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A USM

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 100MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

封装: SC-70, SOT-323

库存2,640

2SC4738-BL(TE85L,F

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A SSM

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

封装: SC-75, SOT-416

库存25,926

RN1502(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.3W SMV

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

封装: SC-74A, SOT-753

库存36,000

RN4990(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
Frequency - Transition: 250MHz, 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: 6-TSSOP, SC-88, SOT-363

库存28,392

1SS361,LJ(CT

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA SSM

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 500nA @ 80V
Operating Temperature - Junction: 125°C (Max)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

封装: SC-75, SOT-416

库存28,032

TB67S213FTAG,EL

Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 36WQFN

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: BiCDMOS
Step Resolution: 1, 1/2, 1/4
Applications: General Purpose
Current - Output: 2A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 35 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 36-WFQFN Exposed Pad
Supplier Device Package: 36-WQFN (6x6)

封装: 36-WFQFN Exposed Pad

库存30,714

TC7USB31FK(TE85L,F

Toshiba Semiconductor and Storage

DUAL SPST USB SWITCH US8

Type: SPST Switches
Circuit: 1 x 1:1
Independent Circuits: 2
Current - Output High, Low: -
Voltage Supply Source: Single Supply
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Supplier Device Package: US8

封装: 8-VFSOP (0.091", 2.30mm Width)

库存46,710

TC74VHC02FTELM

Toshiba Semiconductor and Storage

IC GATE NOR 4CH 2-INP 14-TSSOP

Logic Type: NOR Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.5V
Logic Level - High: 1.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

封装: 14-TSSOP (0.173", 4.40mm Width)

库存4,944

TC74ACT14FTEL

Toshiba Semiconductor and Storage

IC INVERTER HEX 14TSSOP

Logic Type: Inverter
Number of Circuits: 6
Number of Inputs: 6
Features: Schmitt Trigger
Voltage - Supply: 4.5 V ~ 5.5 V
Current - Quiescent (Max): 4µA
Current - Output High, Low: 24mA, 24mA
Logic Level - Low: 0.8V
Logic Level - High: 2V
Max Propagation Delay @ V, Max CL: 11.4ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

封装: 14-TSSOP (0.173", 4.40mm Width)

库存19,248

TC7SH08F,LJ(CT

Toshiba Semiconductor and Storage

IC GATE AND 1CH 2-INPUT SMV

Logic Type: AND Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.5V
Logic Level - High: 1.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: SMV
Package / Case: SC-74A, SOT-753

封装: SC-74A, SOT-753

库存22,926

DF3A5.6LFV(TPL3,Z)

Toshiba Semiconductor and Storage

TVS DIODE 3.5VWM VESM

Type: Zener
Unidirectional Channels: 2
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 3.5V
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

封装: SOT-723

库存2,088

DF2S6.8FS,L3M

Toshiba Semiconductor and Storage

TVS DIODE 5VWM 9VC SOD923

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5V (Max)
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOD-923
Supplier Device Package: SOD-923

封装: SOD-923

库存289,440

TLP176G(F)

Toshiba Semiconductor and Storage

PHOTOCOUPLER GAAS IRED/FET 4-SOP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 35 Ohm
Load Current: 120mA
Voltage - Input: 1.15VDC
Voltage - Load: 0 ~ 350 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 4-SOP (0.173", 4.40mm)
Supplier Device Package: 4-SOP (2.54mm)
Relay Type: Relay

封装: 4-SOP (0.173", 4.40mm)

库存8,694

TLP172G(TP,F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUT 4-SOP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 35 Ohm
Load Current: 110mA
Voltage - Input: 1.15VDC
Voltage - Load: 0 ~ 350 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 4-SOP (0.173", 4.40mm)
Supplier Device Package: 4-SOP (2.54mm)
Relay Type: Relay

封装: 4-SOP (0.173", 4.40mm)

库存20,094

TLP719(TP,F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 5KV TRANS 6-SDIP GW

Number of Channels: 1
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Current Transfer Ratio (Max): -
Turn On / Turn Off Time (Typ): 800ns, 800ns (Max)
Rise / Fall Time (Typ): -
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 20V
Current - Output / Channel: 8mA
Voltage - Forward (Vf) (Typ): 1.65V
Current - DC Forward (If) (Max): 25mA
Vce Saturation (Max): -
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Supplier Device Package: 6-SDIP Gull Wing

封装: 6-SOIC (0.268", 6.80mm Width)

库存5,472

TLP2366(V4-TPL,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV PSH PULL SO6-5

Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 3750Vrms
Common Mode Transient Immunity (Min): 20kV/µs
Input Type: DC
Output Type: Push-Pull, Totem Pole
Current - Output / Channel: 10mA
Data Rate: 20MBd
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Rise / Fall Time (Typ): 15ns, 15ns
Voltage - Forward (Vf) (Typ): 1.61V
Current - DC Forward (If) (Max): 25mA
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
Supplier Device Package: 6-SO, 5 Lead

封装: 6-SOIC (0.179", 4.55mm Width) 5 Leads

库存3,546

TK099V65Z-LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 30A 5DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (8x8)
Package / Case: 4-VSFN Exposed Pad

封装: -

库存44,424

TCR2LN19-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=1.9V I=200MA

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.9V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.6V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 2 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

封装: -

库存30,000

RN1103-LXHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

封装: -

库存18,000

SSM3K62TU-LF

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 800MA UFM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 800mA, 4.5V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: UFM
Package / Case: 3-SMD, Flat Lead

封装: -

库存19,170

RN1711JE-TE85L-F

Toshiba Semiconductor and Storage

TRANSISTOR NPN X2 BRT Q1BSR10KOH

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

封装: -

库存12,000

CRS14-TE85L-Q-M

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 2A S-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Capacitance @ Vr, F: 90pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C

封装: -

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