页 34 - Toshiba Semiconductor and Storage 产品

零件编号	制造商	描述	封装	库存
TK20S04K3L(T6L1,NQ	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 20A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存5,168
2SC2229-Y(T6ONK1FM	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	封装: TO-226-3, TO-92-3 Long Body	库存4,400
HN1C01FE-GR,LF	Toshiba Semiconductor and Storage	TRANS 2NPN 50V 0.15A ES6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封装: SOT-563, SOT-666	库存28,986
RN2969FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封装: SOT-563, SOT-666	库存7,792
1SV277TPH3F	Toshiba Semiconductor and Storage	DIODE VARICAP VCO UHF USC Capacitance @ Vr, F: 2.35pF @ 4V, 1MHz Capacitance Ratio: 2.3 Capacitance Ratio Condition: C1/C4 Voltage - Peak Reverse (Max): 10V Diode Type: Single Q @ Vr, F: - Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC	封装: SC-76, SOD-323	库存26,088
TCR2LE10,LM(CT	Toshiba Semiconductor and Storage	IC REG LINEAR 1V 200MA ESV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 2µA PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	封装: SOT-553	库存32,256
TCK101G,LF	Toshiba Semiconductor and Storage	IC POWER DIST LOAD SWITCH 6WCSP Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: P-Channel Interface: On/Off Voltage - Load: 1.1 V ~ 5.5 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Rds On (Typ): 50 mOhm Input Type: Non-Inverting Features: Load Discharge, Slew Rate Controlled Fault Protection: Over Temperature Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 6-UFBGA Supplier Device Package: 6-BGA	封装: 6-UFBGA	库存3,200
TB62214AFG,8,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 28HSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: DMOS Step Resolution: 1, 1/2, 1/4 Applications: General Purpose Current - Output: 2A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 38 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs Supplier Device Package: 28-HSOP	封装: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs	库存7,344
TB67S102AFNG,EL	Toshiba Semiconductor and Storage	IC STEP MOTOR DRVR PAR 48HTSSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: Power MOSFET Step Resolution: 1, 1/2, 1/4 Applications: General Purpose Current - Output: 3A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 47 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad Supplier Device Package: 48-TSSOP	封装: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad	库存22,092
TC62D722CFNG,C,EL	Toshiba Semiconductor and Storage	IC LED DRIVER LIN 90MA 24HTSSOP Type: Linear Topology: Shift Register Internal Switch(s): Yes Number of Outputs: 16 Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Voltage - Output: 17V Current - Output / Channel: 90mA Frequency: - Dimming: - Applications: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad Supplier Device Package: 24-HTSSOP	封装: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad	库存28,554
TC58NYG2S0HBAI6	Toshiba Semiconductor and Storage	IC EEPROM 4GBIT 25NS 67FBGA Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	封装: 67-VFBGA	库存6,064
74VHCT573AFT(BE)	Toshiba Semiconductor and Storage	IC LATCH OCTAL D-TYPE 20-TSSOP Logic Type: D-Type Latch Circuit: 8:8 Output Type: Tri-State Voltage - Supply: 4.5 V ~ 5.5 V Independent Circuits: 1 Delay Time - Propagation: 8.5ns Current - Output High, Low: 8mA, 8mA Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	封装: 20-TSSOP (0.173", 4.40mm Width)	库存7,088
TC7WH00FU,LJ(CT	Toshiba Semiconductor and Storage	IC GATE NAND 2CH 2-INP SM8 Logic Type: NAND Gate Number of Circuits: 2 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5V Logic Level - High: 1.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: SM8 Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	封装: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	库存2,960
TLP220J(F)	Toshiba Semiconductor and Storage	PHOTORELAY SPST-NO 90MA 600V Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 60 Ohm Load Current: 90mA Voltage - Input: 1.63VDC Voltage - Load: 0 ~ 600 V Mounting Type: Through Hole Termination Style: PC Pin Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: 4-DIP Relay Type: Relay	封装: 4-DIP (0.300", 7.62mm)	库存8,010
TC74HC251AP(F)	Toshiba Semiconductor and Storage	IC MULTIPLEXER 1 X 8:1 16DIP Type: Multiplexer Circuit: 1 x 8:1 Independent Circuits: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage Supply Source: Single Supply Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	封装: 16-DIP (0.300", 7.62mm)	库存4,496
TBD62381APG	Toshiba Semiconductor and Storage	TRANSISTOR ARRAY INTERFACE DRIVE Switch Type: General Purpose Number of Outputs: 8 Ratio - Input:Output: 8:8 Output Configuration: High Side Output Type: N-Channel Interface: - Voltage - Load: 0 ~ 50 V Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V Current - Output (Max): 500mA Rds On (Typ): 1 Ohm Input Type: Inverting Features: - Fault Protection: - Operating Temperature: -40°C ~ 85°C Package / Case: 18-DIP (0.300", 7.62mm) Supplier Device Package: 18-DIP	封装: 18-DIP (0.300", 7.62mm)	库存16,278
74VHCT00AFT	Toshiba Semiconductor and Storage	IC GATE NAND 4CH 2-INP 14TSSOP Logic Type: NAND Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 4.5 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.8V Logic Level - High: 2V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	封装: 14-TSSOP (0.173", 4.40mm Width)	库存12,288
74LCX14FT	Toshiba Semiconductor and Storage	IC INVERTER SCHMITT 6CH 14TSSOP Logic Type: Inverter Number of Circuits: 6 Number of Inputs: 6 Features: Schmitt Trigger Voltage - Supply: 1.65 V ~ 3.6 V Current - Quiescent (Max): 10µA Current - Output High, Low: 24mA, 24mA Logic Level - Low: 0.3 V ~ 0.6 V Logic Level - High: 1.35 V ~ 2.2 V Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	封装: 14-TSSOP (0.173", 4.40mm Width)	库存35,292
TCR2LE21,LM(CT	Toshiba Semiconductor and Storage	200MA LDO VOUT2.1V DROPOUT220MV Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,200
TMPM4G6FDFG(DBB)	Toshiba Semiconductor and Storage	TXZ FAMILY MCU Core Processor: ARM® Cortex®-M4F Core Size: 32-Bit Speed: 160MHz Connectivity: CEC, EBI/EMI, I²C, IrDA, SIO, SPI, SMIF, UART/USART Peripherals: DMA, LVD, POR, WDT Number of I/O: 86 Program Memory Size: 512KB (512K x 8) Program Memory Type: FLASH EEPROM Size: 32K x 8 RAM Size: 128K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Data Converters: A/D 16x12b; D/A 2x8b Oscillator Type: Internal Operating Temperature: -40°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x14)	封装: 100-LQFP	库存6,272
GT15J341-S4X	Toshiba Semiconductor and Storage	IGBT 600V 15A TO220SIS IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Power - Max: 30 W Switching Energy: 300µJ (on), 300µJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 60ns/170ns Test Condition: 300V, 15A, 33Ohm, 15V Reverse Recovery Time (trr): 80 ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220SIS	封装: -	库存60
RN2305-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SC70 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	封装: -	库存18,000
1SS385FV-L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 10V 100MA VESM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 10 V Capacitance @ Vr, F: 20pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM Operating Temperature - Junction: 125°C (Max)	封装: -	库存23,991
7UL1G04NX-ELF-S	Toshiba Semiconductor and Storage	L-MOS LVP IC XSON6 VCC:0.9V-3.6 Logic Type: Inverter Number of Circuits: 1 Number of Inputs: 1 Features: - Voltage - Supply: 0.9V ~ 3.6V Current - Quiescent (Max): 1 µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.7V ~ 0.8V Logic Level - High: 1.7V ~ 2V Max Propagation Delay @ V, Max CL: 5.3ns @ 3.3V, 30pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 6-MP6D (1.45x1) Package / Case: 6-XFDFN	封装: -	库存30,000
RN2131MFV-L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 100 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	封装: -	库存23,700
CUHS15F60-H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 60V 1.5A US2H Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 60 V Capacitance @ Vr, F: 130pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: US2H Operating Temperature - Junction: 150°C	封装: -	库存8,970
TK2R4E08QM-S1X	Toshiba Semiconductor and Storage	UMOS10 TO-220AB 80V 2.4MOHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 2.2mA Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	封装: -	库存528
RN1303-LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SC70 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	封装: -	库存6,660
RN4906-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: -	库存8,100
RN4907-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: -	库存9,000

TK20S04K3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 20A DPAK-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 10V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存5,168

2SC2229-Y(T6ONK1FM

Toshiba Semiconductor and Storage

TRANS NPN 50MA 150V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

封装: TO-226-3, TO-92-3 Long Body

库存4,400

HN1C01FE-GR,LF

Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A ES6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封装: SOT-563, SOT-666

库存28,986

RN2969FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封装: SOT-563, SOT-666

库存7,792

1SV277TPH3F

Toshiba Semiconductor and Storage

DIODE VARICAP VCO UHF USC

Capacitance @ Vr, F: 2.35pF @ 4V, 1MHz
Capacitance Ratio: 2.3
Capacitance Ratio Condition: C1/C4
Voltage - Peak Reverse (Max): 10V
Diode Type: Single
Q @ Vr, F: -
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC

封装: SC-76, SOD-323

库存26,088

TCR2LE10,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1V 200MA ESV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 2µA
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

封装: SOT-553

库存32,256

TCK101G,LF

Toshiba Semiconductor and Storage

IC POWER DIST LOAD SWITCH 6WCSP

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 1.1 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Rds On (Typ): 50 mOhm
Input Type: Non-Inverting
Features: Load Discharge, Slew Rate Controlled
Fault Protection: Over Temperature
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 6-UFBGA
Supplier Device Package: 6-BGA

封装: 6-UFBGA

库存3,200

TB62214AFG,8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 28HSOP

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: DMOS
Step Resolution: 1, 1/2, 1/4
Applications: General Purpose
Current - Output: 2A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 38 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs
Supplier Device Package: 28-HSOP

封装: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs

库存7,344

TB67S102AFNG,EL

Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 48HTSSOP

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: 1, 1/2, 1/4
Applications: General Purpose
Current - Output: 3A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 47 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Supplier Device Package: 48-TSSOP

封装: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad

库存22,092

TC62D722CFNG,C,EL

Toshiba Semiconductor and Storage

IC LED DRIVER LIN 90MA 24HTSSOP

Type: Linear
Topology: Shift Register
Internal Switch(s): Yes
Number of Outputs: 16
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Voltage - Output: 17V
Current - Output / Channel: 90mA
Frequency: -
Dimming: -
Applications: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Supplier Device Package: 24-HTSSOP

封装: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad

库存28,554

TC58NYG2S0HBAI6

Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 67FBGA

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 67-VFBGA
Supplier Device Package: 67-VFBGA (6.5x8)

封装: 67-VFBGA

库存6,064

74VHCT573AFT(BE)

Toshiba Semiconductor and Storage

IC LATCH OCTAL D-TYPE 20-TSSOP

Logic Type: D-Type Latch
Circuit: 8:8
Output Type: Tri-State
Voltage - Supply: 4.5 V ~ 5.5 V
Independent Circuits: 1
Delay Time - Propagation: 8.5ns
Current - Output High, Low: 8mA, 8mA
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

封装: 20-TSSOP (0.173", 4.40mm Width)

库存7,088

TC7WH00FU,LJ(CT

Toshiba Semiconductor and Storage

IC GATE NAND 2CH 2-INP SM8

Logic Type: NAND Gate
Number of Circuits: 2
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.5V
Logic Level - High: 1.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: SM8
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

封装: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

库存2,960

TLP220J(F)

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 90MA 600V

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 60 Ohm
Load Current: 90mA
Voltage - Input: 1.63VDC
Voltage - Load: 0 ~ 600 V
Mounting Type: Through Hole
Termination Style: PC Pin
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP
Relay Type: Relay

封装: 4-DIP (0.300", 7.62mm)

库存8,010

TC74HC251AP(F)

Toshiba Semiconductor and Storage

IC MULTIPLEXER 1 X 8:1 16DIP

Type: Multiplexer
Circuit: 1 x 8:1
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-DIP

封装: 16-DIP (0.300", 7.62mm)

库存4,496

TBD62381APG

Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

Switch Type: General Purpose
Number of Outputs: 8
Ratio - Input:Output: 8:8
Output Configuration: High Side
Output Type: N-Channel
Interface: -
Voltage - Load: 0 ~ 50 V
Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
Current - Output (Max): 500mA
Rds On (Typ): 1 Ohm
Input Type: Inverting
Features: -
Fault Protection: -
Operating Temperature: -40°C ~ 85°C
Package / Case: 18-DIP (0.300", 7.62mm)
Supplier Device Package: 18-DIP

封装: 18-DIP (0.300", 7.62mm)

库存16,278

74VHCT00AFT

Toshiba Semiconductor and Storage

IC GATE NAND 4CH 2-INP 14TSSOP

Logic Type: NAND Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 4.5 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.8V
Logic Level - High: 2V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

封装: 14-TSSOP (0.173", 4.40mm Width)

库存12,288

74LCX14FT

Toshiba Semiconductor and Storage

IC INVERTER SCHMITT 6CH 14TSSOP

Logic Type: Inverter
Number of Circuits: 6
Number of Inputs: 6
Features: Schmitt Trigger
Voltage - Supply: 1.65 V ~ 3.6 V
Current - Quiescent (Max): 10µA
Current - Output High, Low: 24mA, 24mA
Logic Level - Low: 0.3 V ~ 0.6 V
Logic Level - High: 1.35 V ~ 2.2 V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

封装: 14-TSSOP (0.173", 4.40mm Width)

库存35,292

TCR2LE21,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT2.1V DROPOUT220MV

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,200

TMPM4G6FDFG(DBB)

Toshiba Semiconductor and Storage

TXZ FAMILY MCU

Core Processor: ARM® Cortex®-M4F
Core Size: 32-Bit
Speed: 160MHz
Connectivity: CEC, EBI/EMI, I²C, IrDA, SIO, SPI, SMIF, UART/USART
Peripherals: DMA, LVD, POR, WDT
Number of I/O: 86
Program Memory Size: 512KB (512K x 8)
Program Memory Type: FLASH
EEPROM Size: 32K x 8
RAM Size: 128K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Data Converters: A/D 16x12b; D/A 2x8b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x14)

封装: 100-LQFP

库存6,272

GT15J341-S4X

Toshiba Semiconductor and Storage

IGBT 600V 15A TO220SIS

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Power - Max: 30 W
Switching Energy: 300µJ (on), 300µJ (off)
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 60ns/170ns
Test Condition: 300V, 15A, 33Ohm, 15V
Reverse Recovery Time (trr): 80 ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220SIS

封装: -

库存60

RN2305-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

封装: -

库存18,000

1SS385FV-L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 100MA VESM

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 10 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM
Operating Temperature - Junction: 125°C (Max)

封装: -

库存23,991

7UL1G04NX-ELF-S

Toshiba Semiconductor and Storage

L-MOS LVP IC XSON6 VCC:0.9V-3.6

Logic Type: Inverter
Number of Circuits: 1
Number of Inputs: 1
Features: -
Voltage - Supply: 0.9V ~ 3.6V
Current - Quiescent (Max): 1 µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.7V ~ 0.8V
Logic Level - High: 1.7V ~ 2V
Max Propagation Delay @ V, Max CL: 5.3ns @ 3.3V, 30pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 6-MP6D (1.45x1)
Package / Case: 6-XFDFN

封装: -

库存30,000

RN2131MFV-L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 100 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: -
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

封装: -

库存23,700

CUHS15F60-H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 1.5A US2H

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C

封装: -

库存8,970

TK2R4E08QM-S1X

Toshiba Semiconductor and Storage

UMOS10 TO-220AB 80V 2.4MOHM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
Operating Temperature: 175°C
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

封装: -

库存528

RN1303-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

封装: -

库存6,660

RN4906-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz, 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: -

库存8,100

RN4907-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz, 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: -

库存9,000