页 147 - Toshiba Semiconductor and Storage 产品

零件编号	制造商	描述	封装	库存
SSM3K303T(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 2.9A TSM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 83 mOhm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSM Package / Case: TO-236-3, SC-59, SOT-23-3	封装: TO-236-3, SC-59, SOT-23-3	库存5,088
2SK2507(F)	Toshiba Semiconductor and Storage	MOSFET N-CH 50V 25A TO220NIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 12A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220NIS Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存6,464
TK7P60W,RVQ	Toshiba Semiconductor and Storage	MOSFET N CH 600V 7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存2,256,108
SSM6J511NU,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 12V 14A UDFN6B FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 6V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 4A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFNB (2x2) Package / Case: 6-WDFN Exposed Pad	封装: 6-WDFN Exposed Pad	库存3,056
RN2309(TE85L,F)	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 0.1W USM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	封装: SC-70, SOT-323	库存4,736
2SC5087YTE85LF	Toshiba Semiconductor and Storage	TRANS RF NPN 7GHZ 80MA SMQ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 13dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SMQ	封装: SC-61AA	库存6,112
RN2965(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: 6-TSSOP, SC-88, SOT-363	库存3,872
RN1905,LF(CT	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.2W US6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: 6-TSSOP, SC-88, SOT-363	库存48,798
CLH05(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 5A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 0.98V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 150°C	封装: L-FLAT?	库存7,312
TA78L015AP,6MURF(M	Toshiba Semiconductor and Storage	IC REG LINEAR 150MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -30°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	封装: TO-226-3, TO-92-3 Long Body	库存7,312
TCK106G,LF	Toshiba Semiconductor and Storage	IC POWER DIST LOAD SWITCH 4WCSP Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: P-Channel Interface: On/Off Voltage - Load: 1.1 V ~ 5.5 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Rds On (Typ): 49 mOhm Input Type: Non-Inverting Features: Slew Rate Controlled Fault Protection: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 4-UFBGA Supplier Device Package: 4-WCSP (0.79x0.79)	封装: 4-UFBGA	库存25,440
TC7SZ05F,LJ(CT	Toshiba Semiconductor and Storage	IC INVERTER OPEN-DRAIN 5-SSOP Logic Type: Inverter Number of Circuits: 1 Number of Inputs: 1 Features: Open Drain Voltage - Supply: 1.8 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: -, 32mA Logic Level - Low: - Logic Level - High: - Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: SMV Package / Case: SC-74A, SOT-753	封装: SC-74A, SOT-753	库存21,738
TC74VHCT574AFT(ELM	Toshiba Semiconductor and Storage	IC D-TYPE POS TRG SNGL 20TSSOP Function: Standard Type: D-Type Output Type: Tri-State, Non-Inverted Number of Elements: 1 Number of Bits per Element: 8 Clock Frequency: 130MHz Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5 V ~ 5.5 V Current - Quiescent (Iq): 4µA Input Capacitance: 4pF Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width)	封装: 20-TSSOP (0.173", 4.40mm Width)	库存4,768
TC75S59F,LF	Toshiba Semiconductor and Storage	IC C0MP GP CMOS OPEN DRAIN SMV Type: General Purpose Number of Elements: 1 Output Type: Open Drain Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 1pA Current - Output (Typ): 25mA Current - Quiescent (Max): 220µA CMRR, PSRR (Typ): - Propagation Delay (Max): 200ns Hysteresis: - Operating Temperature: -40°C ~ 85°C Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Supplier Device Package: SMV	封装: SC-74A, SOT-753	库存5,024
TMPM333FDFG(C,J)	Toshiba Semiconductor and Storage	IC MCU 32BIT 512KB FLASH 100LQFP Core Processor: ARM? Cortex?-M3 Core Size: 32-Bit Speed: 40MHz Connectivity: I2C, SIO, UART/USART Peripherals: POR, WDT Number of I/O: 78 Program Memory Size: 512KB (512K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 32K x 8 Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V Data Converters: A/D 12x10b Oscillator Type: External Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: - Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x14)	封装: 100-LQFP	库存7,908
TL1L4-NT0,L4A5B	Toshiba Semiconductor and Storage	POWER LED WHT 5700K 3535 Color: White, Cool CCT (K): 5700K Flux @ 85°C, Current - Test: 150 lm (140 lm ~ 160 lm) Flux @ 25°C, Current - Test: - Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.8V Lumens/Watt @ Current - Test: 153 lm/W CRI (Color Rendering Index): 70 Current - Max: 1.5A Viewing Angle: 120° Mounting Type: Surface Mount Package / Case: 1414 (3535 Metric) Supplier Device Package: 3535 Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm) Height - Seated (Max): 0.085" (2.15mm)	封装: 1414 (3535 Metric)	库存5,490
TLP109(V4,E	Toshiba Semiconductor and Storage	OPTOISO 3.75KV TRANS 6-SO 5 LEAD Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 20% @ 16mA Current Transfer Ratio (Max): - Turn On / Turn Off Time (Typ): 800ns, 800ns (Max) Rise / Fall Time (Typ): - Input Type: DC Output Type: Transistor Voltage - Output (Max): 20V Current - Output / Channel: 8mA Voltage - Forward (Vf) (Typ): 1.64V Current - DC Forward (If) (Max): 20mA Vce Saturation (Max): - Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads Supplier Device Package: 6-SO, 5 Lead	封装: 6-SOIC (0.179", 4.55mm Width) 5 Leads	库存7,296
TLP137(F)	Toshiba Semiconductor and Storage	OPTOISO 3.75KV TRANS 6-MFSOP Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 1mA Current Transfer Ratio (Max): 1200% @ 1mA Turn On / Turn Off Time (Typ): 10µs, 8µs Rise / Fall Time (Typ): 8µs, 8µs Input Type: DC Output Type: Transistor with Base Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.173", 4.40mm Width) 5 Leads Supplier Device Package: 6-MFSOP, 5 Lead	封装: 6-SOIC (0.173", 4.40mm Width) 5 Leads	库存22,296
TLP116A(TPL,E	Toshiba Semiconductor and Storage	OPTOISO 3.75KV PUSH PULL SO6-5 Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 10kV/µs Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 10mA Data Rate: 20MBd Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Rise / Fall Time (Typ): 15ns, 15ns Voltage - Forward (Vf) (Typ): 1.58V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads Supplier Device Package: 6-SO, 5 Lead	封装: 6-SOIC (0.179", 4.55mm Width) 5 Leads	库存36,000
74VHC9151FT	Toshiba Semiconductor and Storage	X34 PB-F SCHMITT BUFFER BUFFER V Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 9 Input Type: Schmitt Trigger Output Type: - Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOPB	封装: 20-TSSOP (0.173", 4.40mm Width)	库存19,710
TK090N65Z-S1F	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 30A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.27mA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	封装: -	库存81
RN1408-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V SMINI Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	封装: -	库存18,000
SSM6N17FU-TE85L-F	Toshiba Semiconductor and Storage	MOSFET 2N-CH 50V 0.1A US6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V Power - Max: 200mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: -	库存8,982
TCR3UF28A-LM-CT	Toshiba Semiconductor and Storage	IC REG LINEAR 2.8V 300MA SMV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.8V Voltage - Output (Max): - Voltage Dropout (Max): 0.342V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 680 nA Current - Supply (Max): - PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	封装: -	库存16,308
TC7WH00FK-LJ-CT	Toshiba Semiconductor and Storage	IC GATE NAND 2CH 4-INP 8SSOP Logic Type: NAND Gate Number of Circuits: 2 Number of Inputs: 4 Features: - Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Max): 2 µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: - Logic Level - High: - Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 8-SSOP Package / Case: 8-VFSOP (0.091", 2.30mm Width)	封装: -	Request a Quote
CUHS15F40-H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1.5A US2H Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 630 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 40 V Capacitance @ Vr, F: 130pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max)	封装: -	库存45,045
RFM01U7P-TE12L-F	Toshiba Semiconductor and Storage	RF MOSFET 7.2V PW-MINI Transistor Type: MOSFET (Metal Oxide) Frequency: 520MHz Gain: 10.8dB Voltage - Test: 7.2 V Current Rating: 1A Noise Figure: - Current - Test: 100 mA Power - Output: 1.2W Voltage - Rated: 20 V Package / Case: TO-243AA Supplier Device Package: PW-MINI	封装: -	Request a Quote
CMZ16-TE12L-Q-M	Toshiba Semiconductor and Storage	DIODE ZENER 16V 2W MFLAT Voltage - Zener (Nom) (Vz): 16 V Tolerance: ±10% Power - Max: 2 W Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 10 µA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8)	封装: -	库存17,736
SSM3K35CT-L3F	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 180MA CST3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: CST3 Package / Case: SC-101, SOT-883	封装: -	库存98,961
RN1411-LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V SMINI Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	封装: -	库存1,899

SSM3K303T(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 2.9A TSM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 83 mOhm @ 1.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSM
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

库存5,088

2SK2507(F)

Toshiba Semiconductor and Storage

MOSFET N-CH 50V 25A TO220NIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 46 mOhm @ 12A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220NIS
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存6,464

TK7P60W,RVQ

Toshiba Semiconductor and Storage

MOSFET N CH 600V 7A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V
Vgs (Max): ±30V
FET Feature: Super Junction
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存2,256,108

SSM6J511NU,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 12V 14A UDFN6B

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 6V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 4A, 8V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-UDFNB (2x2)
Package / Case: 6-WDFN Exposed Pad

封装: 6-WDFN Exposed Pad

库存3,056

RN2309(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W USM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

封装: SC-70, SOT-323

库存4,736

2SC5087YTE85LF

Toshiba Semiconductor and Storage

TRANS RF NPN 7GHZ 80MA SMQ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 13dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-61AA
Supplier Device Package: SMQ

封装: SC-61AA

库存6,112

RN2965(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: 6-TSSOP, SC-88, SOT-363

库存3,872

RN1905,LF(CT

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: 6-TSSOP, SC-88, SOT-363

库存48,798

CLH05(TE16R,Q)

Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 5A L-FLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.98V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 150°C

封装: L-FLAT?

库存7,312

TA78L015AP,6MURF(M

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -30°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

封装: TO-226-3, TO-92-3 Long Body

库存7,312

TCK106G,LF

Toshiba Semiconductor and Storage

IC POWER DIST LOAD SWITCH 4WCSP

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 1.1 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Rds On (Typ): 49 mOhm
Input Type: Non-Inverting
Features: Slew Rate Controlled
Fault Protection: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 4-UFBGA
Supplier Device Package: 4-WCSP (0.79x0.79)

封装: 4-UFBGA

库存25,440

TC7SZ05F,LJ(CT

Toshiba Semiconductor and Storage

IC INVERTER OPEN-DRAIN 5-SSOP

Logic Type: Inverter
Number of Circuits: 1
Number of Inputs: 1
Features: Open Drain
Voltage - Supply: 1.8 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: -, 32mA
Logic Level - Low: -
Logic Level - High: -
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: SMV
Package / Case: SC-74A, SOT-753

封装: SC-74A, SOT-753

库存21,738

TC74VHCT574AFT(ELM

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 20TSSOP

Function: Standard
Type: D-Type
Output Type: Tri-State, Non-Inverted
Number of Elements: 1
Number of Bits per Element: 8
Clock Frequency: 130MHz
Max Propagation Delay @ V, Max CL: 10.4ns @ 5V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5 V ~ 5.5 V
Current - Quiescent (Iq): 4µA
Input Capacitance: 4pF
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)

封装: 20-TSSOP (0.173", 4.40mm Width)

库存4,768

TC75S59F,LF

Toshiba Semiconductor and Storage

IC C0MP GP CMOS OPEN DRAIN SMV

Type: General Purpose
Number of Elements: 1
Output Type: Open Drain
Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 25mA
Current - Quiescent (Max): 220µA
CMRR, PSRR (Typ): -
Propagation Delay (Max): 200ns
Hysteresis: -
Operating Temperature: -40°C ~ 85°C
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Supplier Device Package: SMV

封装: SC-74A, SOT-753

库存5,024

TMPM333FDFG(C,J)

Toshiba Semiconductor and Storage

IC MCU 32BIT 512KB FLASH 100LQFP

Core Processor: ARM? Cortex?-M3
Core Size: 32-Bit
Speed: 40MHz
Connectivity: I2C, SIO, UART/USART
Peripherals: POR, WDT
Number of I/O: 78
Program Memory Size: 512KB (512K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 32K x 8
Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V
Data Converters: A/D 12x10b
Oscillator Type: External
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x14)

封装: 100-LQFP

库存7,908

TL1L4-NT0,L4A5B

Toshiba Semiconductor and Storage

POWER LED WHT 5700K 3535

Color: White, Cool
CCT (K): 5700K
Flux @ 85°C, Current - Test: 150 lm (140 lm ~ 160 lm)
Flux @ 25°C, Current - Test: -
Current - Test: 350mA
Voltage - Forward (Vf) (Typ): 2.8V
Lumens/Watt @ Current - Test: 153 lm/W
CRI (Color Rendering Index): 70
Current - Max: 1.5A
Viewing Angle: 120°
Mounting Type: Surface Mount
Package / Case: 1414 (3535 Metric)
Supplier Device Package: 3535
Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
Height - Seated (Max): 0.085" (2.15mm)

封装: 1414 (3535 Metric)

库存5,490

TLP109(V4,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 5 LEAD

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Current Transfer Ratio (Max): -
Turn On / Turn Off Time (Typ): 800ns, 800ns (Max)
Rise / Fall Time (Typ): -
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 20V
Current - Output / Channel: 8mA
Voltage - Forward (Vf) (Typ): 1.64V
Current - DC Forward (If) (Max): 20mA
Vce Saturation (Max): -
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
Supplier Device Package: 6-SO, 5 Lead

封装: 6-SOIC (0.179", 4.55mm Width) 5 Leads

库存7,296

TLP137(F)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-MFSOP

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Current Transfer Ratio (Max): 1200% @ 1mA
Turn On / Turn Off Time (Typ): 10µs, 8µs
Rise / Fall Time (Typ): 8µs, 8µs
Input Type: DC
Output Type: Transistor with Base
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.173", 4.40mm Width) 5 Leads
Supplier Device Package: 6-MFSOP, 5 Lead

封装: 6-SOIC (0.173", 4.40mm Width) 5 Leads

库存22,296

TLP116A(TPL,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV PUSH PULL SO6-5

Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 3750Vrms
Common Mode Transient Immunity (Min): 10kV/µs
Input Type: DC
Output Type: Push-Pull, Totem Pole
Current - Output / Channel: 10mA
Data Rate: 20MBd
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Rise / Fall Time (Typ): 15ns, 15ns
Voltage - Forward (Vf) (Typ): 1.58V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
Supplier Device Package: 6-SO, 5 Lead

封装: 6-SOIC (0.179", 4.55mm Width) 5 Leads

库存36,000

74VHC9151FT

Toshiba Semiconductor and Storage

X34 PB-F SCHMITT BUFFER BUFFER V

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 9
Input Type: Schmitt Trigger
Output Type: -
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOPB

封装: 20-TSSOP (0.173", 4.40mm Width)

库存19,710

TK090N65Z-S1F

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 30A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

封装: -

库存81

RN1408-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

封装: -

库存18,000

SSM6N17FU-TE85L-F

Toshiba Semiconductor and Storage

MOSFET 2N-CH 50V 0.1A US6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
Power - Max: 200mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: -

库存8,982

TCR3UF28A-LM-CT

Toshiba Semiconductor and Storage

IC REG LINEAR 2.8V 300MA SMV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.342V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): 680 nA
Current - Supply (Max): -
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

封装: -

库存16,308

TC7WH00FK-LJ-CT

Toshiba Semiconductor and Storage

IC GATE NAND 2CH 4-INP 8SSOP

Logic Type: NAND Gate
Number of Circuits: 2
Number of Inputs: 4
Features: -
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Max): 2 µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: -
Logic Level - High: -
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SSOP
Package / Case: 8-VFSOP (0.091", 2.30mm Width)

封装: -

Request a Quote

CUHS15F40-H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1.5A US2H

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)

封装: -

库存45,045

RFM01U7P-TE12L-F

Toshiba Semiconductor and Storage

RF MOSFET 7.2V PW-MINI

Transistor Type: MOSFET (Metal Oxide)
Frequency: 520MHz
Gain: 10.8dB
Voltage - Test: 7.2 V
Current Rating: 1A
Noise Figure: -
Current - Test: 100 mA
Power - Output: 1.2W
Voltage - Rated: 20 V
Package / Case: TO-243AA
Supplier Device Package: PW-MINI

封装: -

Request a Quote

CMZ16-TE12L-Q-M

Toshiba Semiconductor and Storage

DIODE ZENER 16V 2W MFLAT

Voltage - Zener (Nom) (Vz): 16 V
Tolerance: ±10%
Power - Max: 2 W
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)

封装: -

库存17,736

SSM3K35CT-L3F

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 180MA CST3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 100mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: CST3
Package / Case: SC-101, SOT-883

封装: -

库存98,961

RN1411-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SMINI

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

封装: -

库存1,899