页 144 - Toshiba Semiconductor and Storage 产品 | 深圳黑森尔电子
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Toshiba Semiconductor and Storage 产品

记录 4,549
页  144/152
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TK7E80W,S1X
Toshiba Semiconductor and Storage

MOSFET N-CH 800V 6.5A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 300V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 950 mOhm @ 3.3A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封装: TO-220-3
库存9,276
TPN4R203NC,L1Q
Toshiba Semiconductor and Storage

MOSFET N CH 30V 23A 8TSON-ADV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 22W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 11.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.3x3.3)
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存47,772
2SC3665-Y(T2NSW,FM
Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V SC71

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-71
  • Supplier Device Package: MSTM
封装: SC-71
库存3,344
2SC2655-Y,F(J
Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封装: TO-226-3, TO-92-3 Long Body
库存6,080
2SA1020A,T6CSF(J
Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封装: TO-226-3, TO-92-3 Long Body
库存6,704
2SC5200N(S1,E,S)
Toshiba Semiconductor and Storage

TRANS NPN 230V 15A TO-3PL

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
  • Power - Max: 150W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
封装: TO-3P-3, SC-65-3
库存5,648
TBC847B,LM
Toshiba Semiconductor and Storage

X34 PB-F SOT-23 TRANSISTOR FOR L

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 5mA
  • Current - Collector Cutoff (Max): 30nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 320mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封装: TO-236-3, SC-59, SOT-23-3
库存73,800
RN1112CT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 50mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
封装: SC-101, SOT-883
库存5,280
hot CMH05A(TE12L,Q,M)
Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 1A MFLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: SOD-128
库存288,000
hot CRS06(TE85L,Q,M)
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 1A SFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Capacitance @ Vr, F: 60pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: -40°C ~ 125°C
封装: SOD-123F
库存3,276,000
CUS10F30,H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1A USC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 30V
  • Capacitance @ Vr, F: 170pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: USC
  • Operating Temperature - Junction: 125°C (Max)
封装: SC-76, SOD-323
库存6,304
TA48M033F(T6L1,SNQ
Toshiba Semiconductor and Storage

IC REG LINEAR 3.3V 500MA PW-MOLD

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 29V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.65V @ 500mA
  • Current - Output: 500mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 1.4mA ~ 25mA
  • PSRR: 70dB (120Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PW-MOLD
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,616
hot TC7S66FU,LF
Toshiba Semiconductor and Storage

IC GATE USV L-MOS SMV

  • Type: Bilateral, FET Switches
  • Circuit: 1 x 1:1
  • Independent Circuits: 1
  • Current - Output High, Low: -
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 2 V ~ 12 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
封装: SC-74A, SOT-753
库存31,200
TC7WPN3125FK(T5L,F
Toshiba Semiconductor and Storage

IC BUS SWITCH SPST DUAL US8

  • Type: Bus Switch
  • Circuit: 2 x 1:1
  • Independent Circuits: 1
  • Current - Output High, Low: -
  • Voltage Supply Source: Dual Supply
  • Voltage - Supply: 1.1 V ~ 2.7 V, 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFSOP (0.091", 2.30mm Width)
  • Supplier Device Package: US8
封装: 8-VFSOP (0.091", 2.30mm Width)
库存24,168
TC74VHC165FK(EL,K)
Toshiba Semiconductor and Storage

IC 8-BIT SHIFT REGISTER 16VSSOP

  • Logic Type: Shift Register
  • Output Type: Complementary
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Function: Parallel or Serial to Serial
  • Voltage - Supply: 2 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-VFSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 16-VSSOP
封装: 16-VFSOP (0.118", 3.00mm Width)
库存19,464
TC4S69F(TE85L,F)
Toshiba Semiconductor and Storage

IC GATE INVERTER SMV

  • Logic Type: Inverter
  • Number of Circuits: 1
  • Number of Inputs: 1
  • Features: -
  • Voltage - Supply: 3 V ~ 18 V
  • Current - Quiescent (Max): 1µA
  • Current - Output High, Low: 3.4mA, 3.4mA
  • Logic Level - Low: 1.5 V ~ 4 V
  • Logic Level - High: 3.5 V ~ 11 V
  • Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMV
  • Package / Case: SC-74A, SOT-753
封装: SC-74A, SOT-753
库存3,536
TC7PZ07FU,LJ(CT
Toshiba Semiconductor and Storage

IC BUFF/DVR NON-INVERT 6SSOP

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 2
  • Number of Bits per Element: 1
  • Input Type: -
  • Output Type: Open Drain
  • Current - Output High, Low: -, 32mA
  • Voltage - Supply: 1.65 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
封装: 6-TSSOP, SC-88, SOT-363
库存25,314
TC4W53FU,LF
Toshiba Semiconductor and Storage

IC MUX/DEMUX DUAL 1X1 8SOP

  • Applications: -
  • Multiplexer/Demultiplexer Circuit: -
  • Switch Circuit: -
  • Number of Channels: 2
  • On-State Resistance (Max): 160 Ohm
  • Voltage - Supply, Single (V+): 3 V ~ 18 V
  • Voltage - Supply, Dual (V±): -
  • -3db Bandwidth: -
  • Features: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
  • Supplier Device Package: 8-SSOP
封装: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
库存3,280
TLP2405(TP,F)
Toshiba Semiconductor and Storage

OPTOISO 3.75KV PSH PULL 8SOIC

  • Number of Channels: 1
  • Inputs - Side 1/Side 2: 1/0
  • Voltage - Isolation: 3750Vrms
  • Common Mode Transient Immunity (Min): 15kV/µs
  • Input Type: DC
  • Output Type: Push-Pull, Totem Pole
  • Current - Output / Channel: 25mA
  • Data Rate: 5Mbps
  • Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
  • Rise / Fall Time (Typ): 30ns, 30ns
  • Voltage - Forward (Vf) (Typ): 1.57V
  • Current - DC Forward (If) (Max): 25mA
  • Voltage - Supply: 4.5 V ~ 20 V
  • Operating Temperature: -40°C ~ 100°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存4,410
TLP7920(D4ALF1,F
Toshiba Semiconductor and Storage

ISO AMP ANALOG OUTPUT GAIN SAFE

  • Amplifier Type: Isolation
  • Number of Circuits: 1
  • Output Type: Differential
  • Slew Rate: -
  • Gain Bandwidth Product: -
  • -3db Bandwidth: 230kHz
  • Current - Input Bias: 5.5nA
  • Voltage - Input Offset: 730µV
  • Current - Supply: 12mA
  • Current - Output / Channel: -
  • Voltage - Supply, Single/Dual (±): 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Gull Wing
  • Supplier Device Package: -
封装: 8-SMD, Gull Wing
库存5,152
TCR2EF50,LM(CT
Toshiba Semiconductor and Storage

200MA LDO VOUT5.0V DROPOUT180MV

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: -
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: -
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,224
TB67S149AFTG-EL
Toshiba Semiconductor and Storage

UNIPOLAR STEPPER MOTOR DRIVER, 8

  • Motor Type - Stepper: Unipolar
  • Motor Type - AC, DC: -
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (2)
  • Interface: On/Off
  • Technology: NMOS
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: -
  • Voltage - Supply: 4.75V ~ 5.25V
  • Voltage - Load: 10V ~ 40V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 48-WFQFN Exposed Pad
  • Supplier Device Package: 48-WQFN (7x7)
封装: -
库存11,940
TCR2LN095-LF-SE
Toshiba Semiconductor and Storage

LDO REG VOUT=0.95V I=200MA

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 0.95V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 1.46V @ 150mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): 2 µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN Exposed Pad
  • Supplier Device Package: 4-SDFN (0.8x0.8)
封装: -
库存26,280
RN1104MFV-L3F-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 47 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
封装: -
库存71,556
CUHS15S30-H3F
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A US2H

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 30 V
  • Capacitance @ Vr, F: 200pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: US2H
  • Operating Temperature - Junction: 150°C
封装: -
库存124,530
CMS21-TE12L-Q-M
Toshiba Semiconductor and Storage

X35 PB-F DIODE M-FLAT MOQ=3000 V

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
库存9,000
RN1101MFV-L3F-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 4.7 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
封装: -
库存44,733
SSM3J378R-LXHF
Toshiba Semiconductor and Storage

AECQ MOSFET PCH -20V -6A SOT23F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
封装: -
库存66,507
TC7WHU04FU-TE12L
Toshiba Semiconductor and Storage

IC INVERTER TRIPLE 8-SSOP

  • Logic Type: Inverter
  • Number of Circuits: 3
  • Number of Inputs: 1
  • Features: -
  • Voltage - Supply: 2V ~ 5.5V
  • Current - Quiescent (Max): 2 µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.3V
  • Logic Level - High: 1.7V
  • Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SSOP
  • Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
封装: -
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RN2109-LXHF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 47 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
封装: -
库存18,000