页 84 - STMicroelectronics 产品 - 晶体管 - FET，MOSFET - 单

图片	零件编号	制造商	描述	封装	库存	数量	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
	STY100NS20FD	STMicroelectronics	MOSFET N-CH 200V 100A MAX247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: MAX247? Package / Case: TO-247-3	封装: TO-247-3	库存7,792		MOSFET (Metal Oxide)	200V	100A (Tc)	10V	4V @ 250µA	360nC @ 10V	7900pF @ 25V	±20V	-	450W (Tc)	24 mOhm @ 50A, 10V	150°C (TJ)	Through Hole	MAX247?	TO-247-3
	STE45NK80ZD	STMicroelectronics	MOSFET N-CH 800V 45A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 45A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 781nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 26000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 22.5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: ISOTOP	封装: ISOTOP	库存5,520		MOSFET (Metal Oxide)	800V	45A	10V	4.5V @ 150µA	781nC @ 10V	26000pF @ 25V	±30V	-	600W (Tc)	130 mOhm @ 22.5A, 10V	-65°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	ISOTOP