页 6 - STMicroelectronics 产品 - 晶体管 - FET，MOSFET - 单 | 深圳黑森尔电子
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STMicroelectronics 产品 - 晶体管 - FET，MOSFET - 单

记录 2,492
页  6/84
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数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
STB30N65DM6AG
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 223W (Tc)
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存2,997
MOSFET (Metal Oxide)
650 V
28A (Tc)
10V
4.75V @ 250µA
46 nC @ 10 V
2000 pF @ 100 V
±25V
-
223W (Tc)
115mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STD13N60M6
STMicroelectronics

MOSFET N-CH 600V 10A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 92W (Tc)
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
Request a Quote
MOSFET (Metal Oxide)
600 V
10A (Tc)
10V
4.75V @ 250µA
13 nC @ 10 V
509 pF @ 100 V
±25V
-
92W (Tc)
380mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
STO67N60M6
STMicroelectronics

MOSFET N-CH 600V 34A TOLL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TOLL (HV)
  • Package / Case: 8-PowerSFN
封装: -
库存5,400
MOSFET (Metal Oxide)
600 V
34A (Tc)
10V
4.75V @ 250µA
72.5 nC @ 10 V
3400 pF @ 100 V
±25V
-
150W (Tc)
54mOhm @ 26A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TOLL (HV)
8-PowerSFN
STP46N60M6
STMicroelectronics

MOSFET N-CH 600V 36A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
600 V
36A (Tc)
10V
4.75V @ 250µA
53.5 nC @ 10 V
2340 pF @ 100 V
±25V
-
250W (Tc)
80mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
STL35N75LF3
STMicroelectronics

MOSFET N-CH 75V 32A POWERFLAT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (3.3x3.3)
  • Package / Case: 8-PowerVDFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
75 V
32A (Tc)
4.5V, 10V
2.4V @ 250µA
7.5 nC @ 4.5 V
800 pF @ 50 V
±20V
-
50W (Tc)
25mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (3.3x3.3)
8-PowerVDFN
STL305N4LF8AG
STMicroelectronics

POWERFLAT 5X6 WF

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
STO65N60DM6
STMicroelectronics

N-CHANNEL 600 V, 67 MOHM TYP., 4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 320W (Tc)
  • Rds On (Max) @ Id, Vgs: 76mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TOLL (HV)
  • Package / Case: 8-PowerSFN
封装: -
库存5,385
MOSFET (Metal Oxide)
600 V
46A (Tc)
10V
4.75V @ 250µA
65.2 nC @ 10 V
2500 pF @ 100 V
±25V
-
320W (Tc)
76mOhm @ 23A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TOLL (HV)
8-PowerSFN
SCT070HU120G3AG
STMicroelectronics

HU3PAK

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 4.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 223W (Tc)
  • Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: HU3PAK
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
封装: -
Request a Quote
SiC (Silicon Carbide Junction Transistor)
1200 V
30A (Tc)
15V, 18V
4.2V @ 1mA
37 nC @ 18 V
900 pF @ 850 V
+22V, -10V
-
223W (Tc)
87mOhm @ 15A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
HU3PAK
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
STF6N60DM2
STMicroelectronics

MOSFET N-CH 600V 5A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封装: -
Request a Quote
MOSFET (Metal Oxide)
600 V
5A (Tc)
10V
4.75V @ 250µA
6.2 nC @ 10 V
274 pF @ 100 V
±25V
-
20W (Tc)
1.1Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
STWA46N65DM6AG
STMicroelectronics

DISCRETE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3344 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 391W (Tc)
  • Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
650 V
50A (Tc)
10V
4.75V @ 250µA
80 nC @ 10 V
3344 pF @ 100 V
±25V
-
391W (Tc)
63mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
STWA70N65DM6
STMicroelectronics

MOSFET N-CH 650V 68A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 450W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
封装: -
库存45
MOSFET (Metal Oxide)
650 V
68A (Tc)
10V
4.75V @ 250µA
125 nC @ 10 V
4900 pF @ 100 V
±25V
-
450W (Tc)
40mOhm @ 34A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
STP22N60M6
STMicroelectronics

MOSFET N-CH 600V 15A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 230mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
600 V
15A (Tc)
10V
4.75V @ 250µA
20 nC @ 10 V
800 pF @ 100 V
±25V
-
130W (Tc)
230mOhm @ 7.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
STL19N3LLH6AG
STMicroelectronics

DISCRETE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (5x6)
  • Package / Case: 8-PowerVDFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
30 V
10A (Tc)
4.5V, 10V
2.5V @ 250µA
3.7 nC @ 4.5 V
321 pF @ 25 V
±20V
-
50W (Tc)
33mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerFlat™ (5x6)
8-PowerVDFN
STL320N4LF8
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 40 V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (5x6)
  • Package / Case: 8-PowerDFN
封装: -
库存17,961
MOSFET (Metal Oxide)
40 V
-
-
-
-
-
-
-
-
-
-
Surface Mount
PowerFlat™ (5x6)
8-PowerDFN
STFU9N65M2
STMicroelectronics

MOSFET N-CH 650V 5A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封装: -
Request a Quote
MOSFET (Metal Oxide)
650 V
5A (Tc)
10V
4V @ 250µA
10 nC @ 10 V
315 pF @ 100 V
±25V
-
20W (Tc)
900mOhm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
STP65N150M9
STMicroelectronics

N-CHANNEL 650 V, 128 MOHM TYP.,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封装: -
库存1,377
MOSFET (Metal Oxide)
650 V
20A (Tc)
10V
4.2V @ 250µA
32 nC @ 10 V
1239 pF @ 400 V
±30V
-
140W (Tc)
150mOhm @ 10A, 10V
150°C (TJ)
Through Hole
TO-220
TO-220-3
STF20N95DK5
STMicroelectronics

DISCRETE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 50.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封装: -
Request a Quote
MOSFET (Metal Oxide)
950 V
18A (Tc)
10V
5V @ 100µA
50.7 nC @ 10 V
1600 pF @ 100 V
±30V
-
28W (Tc)
330mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
STWA68N60M6
STMicroelectronics

MOSFET N-CH 600V 63A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 390W (Tc)
  • Rds On (Max) @ Id, Vgs: 41mOhm @ 31.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
封装: -
库存9
MOSFET (Metal Oxide)
600 V
63A (Tc)
10V
4.75V @ 250µA
106 nC @ 10 V
4360 pF @ 100 V
±25V
-
390W (Tc)
41mOhm @ 31.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
STL9P4LF6AG
STMicroelectronics

DISCRETE

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
  • Vgs (Max): ±18V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (3.3x3.3)
  • Package / Case: 8-PowerVDFN
封装: -
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MOSFET (Metal Oxide)
40 V
31A (Tc)
4.5V, 10V
2.5V @ 250µA
48 nC @ 4.5 V
2540 pF @ 25 V
±18V
-
50W (Tc)
26mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (3.3x3.3)
8-PowerVDFN
STW45N60DM6
STMicroelectronics

MOSFET N-CH 600V 30A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 210W (Tc)
  • Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
封装: -
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MOSFET (Metal Oxide)
600 V
30A (Tc)
10V
4.75V @ 250µA
44 nC @ 10 V
1920 pF @ 100 V
±25V
-
210W (Tc)
99mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
STB55NF03LT4
STMicroelectronics

MOSFET N-CH 30V 55A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 25 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 27.5A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
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MOSFET (Metal Oxide)
30 V
55A (Tc)
4.5V, 10V
1V @ 250µA
27 nC @ 4.5 V
1265 pF @ 25 V
±16V
-
80W (Tc)
13mOhm @ 27.5A, 10V
175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STF22N60DM6
STMicroelectronics

MOSFET N-CH 600V 15A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 230mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封装: -
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MOSFET (Metal Oxide)
600 V
15A (Tc)
10V
4.75V @ 250µA
20 nC @ 10 V
800 pF @ 100 V
±25V
-
30W (Tc)
230mOhm @ 7.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
STI24N60M6
STMicroelectronics

MOSFET N-CH 600V I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
封装: -
库存270
MOSFET (Metal Oxide)
600 V
17A (Tj)
10V
4.75V @ 250µA
23 nC @ 10 V
960 pF @ 100 V
±25V
-
130W (Tc)
190mOhm @ 8.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2PAK, TO-262AA
STU6N65M2-S
STMicroelectronics

MOSFET N-CH 650V 4A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 226 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.35Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: -
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MOSFET (Metal Oxide)
650 V
4A (Tc)
10V
4V @ 250µA
9.8 nC @ 10 V
226 pF @ 100 V
±25V
-
60W (Tc)
1.35Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
IPAK
TO-251-3 Short Leads, IPak, TO-251AA
SCTH40N120G2V-7
STMicroelectronics

SILICON CARBIDE POWER MOSFET 120

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.9V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1233 pF @ 800 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 238W (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: H2PAK-7
  • Package / Case: -
封装: -
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SiCFET (Silicon Carbide)
1200 V
36A (Tc)
18V
4.9V @ 1mA
61 nC @ 18 V
1233 pF @ 800 V
+22V, -10V
-
238W (Tc)
100mOhm @ 20A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
H2PAK-7
-
STW70N60DM6-4
STMicroelectronics

MOSFET N-CH 600V 62A TO247-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 390W (Tc)
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 31A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
封装: -
库存450
MOSFET (Metal Oxide)
600 V
62A (Tc)
10V
4.75V @ 250µA
99 nC @ 10 V
4360 pF @ 100 V
±25V
-
390W (Tc)
42mOhm @ 31A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-4
TO-247-4
STB47N60DM6AG
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 600 V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存3,027
MOSFET (Metal Oxide)
600 V
36A (Tc)
10V
4.75V @ 250µA
55 nC @ 10 V
2350 pF @ 100 V
±25V
-
250W (Tc)
80mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STW65N023M9-4
STMicroelectronics

N-CHANNEL 650 V, 19.9 MOHM TYP.,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8844 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 463W (Tc)
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 48A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
封装: -
库存192
MOSFET (Metal Oxide)
650 V
95A (Tc)
10V
4.2V @ 250µA
230 nC @ 10 V
8844 pF @ 400 V
±30V
-
463W (Tc)
23mOhm @ 48A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-4
TO-247-4
STD80N6F7
STMicroelectronics

MOSFET N-CH 60V 40A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
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MOSFET (Metal Oxide)
60 V
40A (Tc)
10V
4V @ 250µA
25 nC @ 10 V
1600 pF @ 30 V
±20V
-
100W (Tc)
8mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
STD10N60M6
STMicroelectronics

MOSFET N-CH 600V 6.4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 338 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 3.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
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MOSFET (Metal Oxide)
600 V
6.4A (Tc)
10V
4.75V @ 250µA
8.8 nC @ 10 V
338 pF @ 100 V
±25V
-
60W (Tc)
600mOhm @ 3.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63