页 7 - Rohm Semiconductor 产品 - 晶体管 - UGBT，MOSFET - 单

图片	零件编号	制造商	描述	封装	库存	数量	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
	RGTH00TS65DGC11	Rohm Semiconductor	IGBT 650V 85A 277W TO-247N IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Power - Max: 277W Switching Energy: - Input Type: Standard Gate Charge: 94nC Td (on/off) @ 25°C: 39ns/143ns Test Condition: 400V, 50A, 10 Ohm, 15V Reverse Recovery Time (trr): 54ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	封装: TO-247-3	库存6,552		650V	85A	200A	2.1V @ 15V, 50A	277W	-	Standard	94nC	39ns/143ns	400V, 50A, 10 Ohm, 15V	54ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247N