NXP 产品 - 晶体管 - 双极 (BJT) - 阵列 | 深圳黑森尔电子
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NXP 产品 - 晶体管 - 双极 (BJT) - 阵列

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Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BC847QASX
NXP

TRANS NPN/PNP 45V 0.1A 6DFN

  • Transistor Type: NPN, PNP Complementary
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 230mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-XFDFN Exposed Pad
  • Supplier Device Package: DFN1010B-6
封装: 10-XFDFN Exposed Pad
库存2,368
100mA
45V
100mV @ 500µA, 10mA
15nA (ICBO)
200 @ 2mA, 5V
230mW
100MHz
150°C (TJ)
Surface Mount
10-XFDFN Exposed Pad
DFN1010B-6