页 6 - Microchip Technology 产品 - 晶体管 - FET，MOSFET - 阵列

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
LN100LA-G	Microchip Technology	MOSFET 2N-CH 1200V FET Type: 2 N-Channel (Cascoded) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 3000 Ohm @ 2mA, 2.8V Vgs(th) (Max) @ Id: 1.6V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 350mW Operating Temperature: -25°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VFLGA Supplier Device Package: 6-LFGA (3x3)	封装: 6-VFLGA	库存3,232	Standard	1200V (1.2kV)	-	3000 Ohm @ 2mA, 2.8V	1.6V @ 10µA	-	50pF @ 25V	350mW	-25°C ~ 125°C (TJ)	Surface Mount	6-VFLGA	6-LFGA (3x3)
LP1030DK1-G	Microchip Technology	MOSFET 2P-CH 300V SOT23-5 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 180 Ohm @ 20mA, 7V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 10.8pF @ 25V Power - Max: - Operating Temperature: -25°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SOT-23-5	封装: SC-74A, SOT-753	库存4,128	Standard	300V	-	180 Ohm @ 20mA, 7V	2.4V @ 1mA	-	10.8pF @ 25V	-	-25°C ~ 125°C (TJ)	Surface Mount	SC-74A, SOT-753	SOT-23-5
TC8020K6-G-M937	Microchip Technology	MOSFET 6N/6P-CH 200V 56VQFN FET Type: 6 N and 6 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 56-VFQFN Exposed Pad Supplier Device Package: 56-QFN (8x8)	封装: 56-VFQFN Exposed Pad	库存6,304	Standard	200V	-	8 Ohm @ 1A, 10V	2.4V @ 1mA	-	50pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	56-VFQFN Exposed Pad	56-QFN (8x8)
TC1550TG-G	Microchip Technology	MOSFET N/P-CH 500V 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 60 Ohm @ 50mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,472	Standard	500V	-	60 Ohm @ 50mA, 10V	4V @ 1mA	-	55pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
TC8220K6-G	Microchip Technology	MOSFET 2N/2P-CH 200V 12VDFN FET Type: 2 N and 2 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-VFDFN Exposed Pad Supplier Device Package: 12-DFN (4x4)	封装: 12-VFDFN Exposed Pad	库存5,376	Standard	200V	-	6 Ohm @ 1A, 10V	2.4V @ 1mA	-	56pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	12-VFDFN Exposed Pad	12-DFN (4x4)
TC7920K6-G	Microchip Technology	MOSFET 2N/2P-CH 200V 12VDFN FET Type: 2 N and 2 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 10 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 52pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-VFDFN Exposed Pad Supplier Device Package: 12-DFN (4x4)	封装: 12-VFDFN Exposed Pad	库存6,032	Standard	200V	-	10 Ohm @ 1A, 10V	2.4V @ 1mA	-	52pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	12-VFDFN Exposed Pad	12-DFN (4x4)
TC2320TG-G	Microchip Technology	MOSFET N/P-CH 200V 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,464	Standard	200V	-	7 Ohm @ 1A, 10V	2V @ 1mA	-	110pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
TD9944TG-G	Microchip Technology	MOSFET 2N-CH 240V 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,440	Standard	240V	-	6 Ohm @ 500mA, 10V	2V @ 1mA	-	125pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
TC6215TG-G	Microchip Technology	MOSFET N/P-CH 150V 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 4 Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存91,740	Standard	150V	-	4 Ohm @ 2A, 10V	2V @ 1mA	-	120pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
TC6320TG-G	Microchip Technology	MOSFET N/P-CH 200V 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存27,672	Standard	200V	-	7 Ohm @ 1A, 10V	2V @ 1mA	-	110pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
TC6320K6-G	Microchip Technology	MOSFET N/P-CH 200V 8VDFN FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN (4x4)	封装: 8-VDFN Exposed Pad	库存2,064	Standard	200V	-	7 Ohm @ 1A, 10V	2V @ 1mA	-	110pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-DFN (4x4)
TC6321T-V/9U	Microchip Technology	MOSFET ARRAY N/P-CH 200V 8VDFN FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V, 8 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA, 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 200pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-VDFN (6x5)	封装: 8-VDFN Exposed Pad	库存31,644	Logic Level Gate	200V	2A (Ta)	7 Ohm @ 1A, 10V, 8 Ohm @ 1A, 10V	2V @ 1mA, 2.4V @ 1mA	-	110pF @ 25V, 200pF @ 25V	-	-55°C ~ 175°C	Surface Mount	8-VDFN Exposed Pad	8-VDFN (6x5)
DN2625DK6-G	Microchip Technology	MOSFET 2N-CH 250V 1.1A 8VDFN FET Type: 2 N-Channel (Dual) FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 1.1A Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1A, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 1.5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN (5x5)	封装: 8-VDFN Exposed Pad	库存17,076	Depletion Mode	250V	1.1A	3.5 Ohm @ 1A, 0V	-	7.04nC @ 1.5V	1000pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-DFN (5x5)
TC8020K6-G	Microchip Technology	MOSFET 6N/6P-CH 200V 56VQFN FET Type: 6 N and 6 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 56-VFQFN Exposed Pad Supplier Device Package: 56-QFN (8x8)	封装: 56-VFQFN Exposed Pad	库存22,200	Standard	200V	-	8 Ohm @ 1A, 10V	2.4V @ 1mA	-	50pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	56-VFQFN Exposed Pad	56-QFN (8x8)
MSCSM120VR1M16CT3AG	Microchip Technology	SIC 2N-CH 1200V 173A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 745W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	173A (Tc)	16mOhm @ 80A, 20V	2.8V @ 6mA	464nC @ 20V	6040pF @ 1000V	745W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120DUM16T3AG	Microchip Technology	SIC 2N-CH 1200V 173A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 745W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	封装: -	Request a Quote	-	1200V (1.2kV)	173A (Tc)	16mOhm @ 80A, 20V	2.8V @ 2mA	464nC @ 20V	6040pF @ 1000V	745W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM120AM02T6LIAG	Microchip Technology	SIC 2N-CH 1200V 947A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 947A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V Vgs(th) (Max) @ Id: 2.8V @ 36mA Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V Power - Max: 3.75kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	947A (Tc)	2.6mOhm @ 480A, 20V	2.8V @ 36mA	2784nC @ 20V	36200pF @ 1000V	3.75kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120HM31T3AG	Microchip Technology	SIC 4N-CH 1200V 89A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 395W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	89A (Tc)	31mOhm @ 40A, 20V	2.8V @ 3mA	232nC @ 20V	3020pF @ 1000V	395W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120DHM31CTBL2NG	Microchip Technology	SIC 2N-CH 1200V 79A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 79A Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 310W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	79A	31mOhm @ 40A, 20V	2.8V @ 1mA	232nC @ 20V	3020pF @ 1000V	310W	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120HRM052NG	Microchip Technology	SIC 4N-CH 1200V/700V 472A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V Current - Continuous Drain (Id) @ 25°C: 472A (Tc), 442A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V Vgs(th) (Max) @ Id: 2.8V @ 18mA, 2.4V @ 16mA Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V, 860nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V, 18000pF @ 700V Power - Max: 1.846kW (Tc), 1.161kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV), 700V	472A (Tc), 442A (Tc)	5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V	2.8V @ 18mA, 2.4V @ 16mA	1392nC @ 20V, 860nC @ 20V	18100pF @ 1000V, 18000pF @ 700V	1.846kW (Tc), 1.161kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120VR1M16CTPAG	Microchip Technology	SIC 6N-CH 1200V 171A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 728W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	171A (Tc)	16mOhm @ 80A, 20V	2.8V @ 6mA	464nC @ 20V	6040pF @ 1000V	728W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
APTMC120HRM40CT3AG	Microchip Technology	SIC 2N-CH 1200V 73A SP3 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 3V @ 12.5mA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V Power - Max: 375W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3	封装: -	Request a Quote	-	1200V (1.2kV)	73A (Tc)	34mOhm @ 50A, 20V	3V @ 12.5mA	161nC @ 5V	2788pF @ 1000V	375W	-40°C ~ 150°C (TJ)	Chassis Mount	Module	SP3
MSCSM170DUM23T3AG	Microchip Technology	SIC 2N-CH 1700V 124A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V Power - Max: 602W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	封装: -	Request a Quote	-	1700V (1.7kV)	124A (Tc)	22.5mOhm @ 60A, 20V	3.2V @ 5mA	356nC @ 20V	6600pF @ 1000V	602W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM170AM029T6LIAG	Microchip Technology	SIC MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM170AM029CT6LIAG	Microchip Technology	SIC 2N-CH 1700V 676A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 676A (Tc) Rds On (Max) @ Id, Vgs: 3.75mOhm @ 360A, 20V Vgs(th) (Max) @ Id: 3.3V @ 30mA Gate Charge (Qg) (Max) @ Vgs: 2136nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 1000V Power - Max: 3kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1700V (1.7kV)	676A (Tc)	3.75mOhm @ 360A, 20V	3.3V @ 30mA	2136nC @ 20V	39600pF @ 1000V	3kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120AM042CT6AG	Microchip Technology	SIC 2N-CH 1200V 495A SP6C FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V Power - Max: 2.031kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C	封装: -	Request a Quote	-	1200V (1.2kV)	495A (Tc)	5.2mOhm @ 240A, 20V	2.8V @ 6mA	1392nC @ 20V	18.1pF @ 1000V	2.031kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C

LN100LA-G

Microchip Technology

MOSFET 2N-CH 1200V

FET Type: 2 N-Channel (Cascoded)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 3000 Ohm @ 2mA, 2.8V
Vgs(th) (Max) @ Id: 1.6V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 350mW
Operating Temperature: -25°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VFLGA
Supplier Device Package: 6-LFGA (3x3)

封装: 6-VFLGA

库存3,232

Standard

1200V (1.2kV)

-

3000 Ohm @ 2mA, 2.8V

1.6V @ 10µA

-

50pF @ 25V

350mW

-25°C ~ 125°C (TJ)

Surface Mount

6-VFLGA

6-LFGA (3x3)

LP1030DK1-G

Microchip Technology

MOSFET 2P-CH 300V SOT23-5

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 180 Ohm @ 20mA, 7V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 10.8pF @ 25V
Power - Max: -
Operating Temperature: -25°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SOT-23-5

封装: SC-74A, SOT-753

库存4,128

Standard

300V

-

180 Ohm @ 20mA, 7V

2.4V @ 1mA

-

10.8pF @ 25V

-

-25°C ~ 125°C (TJ)

Surface Mount

SC-74A, SOT-753

SOT-23-5

TC8020K6-G-M937

Microchip Technology

MOSFET 6N/6P-CH 200V 56VQFN

FET Type: 6 N and 6 P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Supplier Device Package: 56-QFN (8x8)

封装: 56-VFQFN Exposed Pad

库存6,304

Standard

200V

-

8 Ohm @ 1A, 10V

2.4V @ 1mA

-

50pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

56-VFQFN Exposed Pad

56-QFN (8x8)

TC1550TG-G

Microchip Technology

MOSFET N/P-CH 500V 8SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 60 Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,472

Standard

500V

-

60 Ohm @ 50mA, 10V

4V @ 1mA

-

55pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

TC8220K6-G

Microchip Technology

MOSFET 2N/2P-CH 200V 12VDFN

FET Type: 2 N and 2 P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-VFDFN Exposed Pad
Supplier Device Package: 12-DFN (4x4)

封装: 12-VFDFN Exposed Pad

库存5,376

Standard

200V

-

6 Ohm @ 1A, 10V

2.4V @ 1mA

-

56pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

12-VFDFN Exposed Pad

12-DFN (4x4)

TC7920K6-G

Microchip Technology

MOSFET 2N/2P-CH 200V 12VDFN

FET Type: 2 N and 2 P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 10 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 52pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-VFDFN Exposed Pad
Supplier Device Package: 12-DFN (4x4)

封装: 12-VFDFN Exposed Pad

库存6,032

Standard

200V

-

10 Ohm @ 1A, 10V

2.4V @ 1mA

-

52pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

12-VFDFN Exposed Pad

12-DFN (4x4)

TC2320TG-G

Microchip Technology

MOSFET N/P-CH 200V 8SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,464

Standard

200V

-

7 Ohm @ 1A, 10V

2V @ 1mA

-

110pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

TD9944TG-G

Microchip Technology

MOSFET 2N-CH 240V 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 240V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,440

Standard

240V

-

6 Ohm @ 500mA, 10V

2V @ 1mA

-

125pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

TC6215TG-G

Microchip Technology

MOSFET N/P-CH 150V 8SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 4 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存91,740

Standard

150V

-

4 Ohm @ 2A, 10V

2V @ 1mA

-

120pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

TC6320TG-G

Microchip Technology

MOSFET N/P-CH 200V 8SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存27,672

Standard

200V

-

7 Ohm @ 1A, 10V

2V @ 1mA

-

110pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

TC6320K6-G

Microchip Technology

MOSFET N/P-CH 200V 8VDFN

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN (4x4)

封装: 8-VDFN Exposed Pad

库存2,064

Standard

200V

-

7 Ohm @ 1A, 10V

2V @ 1mA

-

110pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

8-DFN (4x4)

TC6321T-V/9U

Microchip Technology

MOSFET ARRAY N/P-CH 200V 8VDFN

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V, 8 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA, 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 200pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-VDFN (6x5)

封装: 8-VDFN Exposed Pad

库存31,644

Logic Level Gate

200V

2A (Ta)

7 Ohm @ 1A, 10V, 8 Ohm @ 1A, 10V

2V @ 1mA, 2.4V @ 1mA

-

110pF @ 25V, 200pF @ 25V

-

-55°C ~ 175°C

Surface Mount

8-VDFN Exposed Pad

8-VDFN (6x5)

DN2625DK6-G

Microchip Technology

MOSFET 2N-CH 250V 1.1A 8VDFN

FET Type: 2 N-Channel (Dual)
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1A, 0V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 1.5V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN (5x5)

封装: 8-VDFN Exposed Pad

库存17,076

Depletion Mode

250V

1.1A

3.5 Ohm @ 1A, 0V

-

7.04nC @ 1.5V

1000pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

8-DFN (5x5)

TC8020K6-G

Microchip Technology

MOSFET 6N/6P-CH 200V 56VQFN

FET Type: 6 N and 6 P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Supplier Device Package: 56-QFN (8x8)

封装: 56-VFQFN Exposed Pad

库存22,200

Standard

200V

-

8 Ohm @ 1A, 10V

2.4V @ 1mA

-

50pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

56-VFQFN Exposed Pad

56-QFN (8x8)

MSCSM120VR1M16CT3AG

Microchip Technology

SIC 2N-CH 1200V 173A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 745W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

Request a Quote

-

1200V (1.2kV)

173A (Tc)

16mOhm @ 80A, 20V

2.8V @ 6mA

464nC @ 20V

6040pF @ 1000V

745W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120DUM16T3AG

Microchip Technology

SIC 2N-CH 1200V 173A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 745W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

封装: -

Request a Quote

-

1200V (1.2kV)

173A (Tc)

16mOhm @ 80A, 20V

2.8V @ 2mA

464nC @ 20V

6040pF @ 1000V

745W (Tc)

-55°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

MSCSM120AM02T6LIAG

Microchip Technology

SIC 2N-CH 1200V 947A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 36mA
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V
Power - Max: 3.75kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

Request a Quote

-

1200V (1.2kV)

947A (Tc)

2.6mOhm @ 480A, 20V

2.8V @ 36mA

2784nC @ 20V

36200pF @ 1000V

3.75kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120HM31T3AG

Microchip Technology

SIC 4N-CH 1200V 89A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Power - Max: 395W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

Request a Quote

-

1200V (1.2kV)

89A (Tc)

31mOhm @ 40A, 20V

2.8V @ 3mA

232nC @ 20V

3020pF @ 1000V

395W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120DHM31CTBL2NG

Microchip Technology

SIC 2N-CH 1200V 79A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 79A
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Power - Max: 310W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

Request a Quote

-

1200V (1.2kV)

79A

31mOhm @ 40A, 20V

2.8V @ 1mA

232nC @ 20V

3020pF @ 1000V

310W

-55°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120HRM052NG

Microchip Technology

SIC 4N-CH 1200V/700V 472A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V
Current - Continuous Drain (Id) @ 25°C: 472A (Tc), 442A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 18mA, 2.4V @ 16mA
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V, 860nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V, 18000pF @ 700V
Power - Max: 1.846kW (Tc), 1.161kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

Request a Quote

-

1200V (1.2kV), 700V

472A (Tc), 442A (Tc)

5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V

2.8V @ 18mA, 2.4V @ 16mA

1392nC @ 20V, 860nC @ 20V

18100pF @ 1000V, 18000pF @ 700V

1.846kW (Tc), 1.161kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120VR1M16CTPAG

Microchip Technology

SIC 6N-CH 1200V 171A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 728W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

Request a Quote

-

1200V (1.2kV)

171A (Tc)

16mOhm @ 80A, 20V

2.8V @ 6mA

464nC @ 20V

6040pF @ 1000V

728W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

APTMC120HRM40CT3AG

Microchip Technology

SIC 2N-CH 1200V 73A SP3

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 3V @ 12.5mA
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V
Power - Max: 375W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3

封装: -

Request a Quote

-

1200V (1.2kV)

73A (Tc)

34mOhm @ 50A, 20V

3V @ 12.5mA

161nC @ 5V

2788pF @ 1000V

375W

-40°C ~ 150°C (TJ)

Chassis Mount

Module

SP3

MSCSM170DUM23T3AG

Microchip Technology

SIC 2N-CH 1700V 124A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
Power - Max: 602W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

封装: -

Request a Quote

-

1700V (1.7kV)

124A (Tc)

22.5mOhm @ 60A, 20V

3.2V @ 5mA

356nC @ 20V

6600pF @ 1000V

602W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

MSCSM170AM029T6LIAG

Microchip Technology

SIC MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MSCSM170AM029CT6LIAG

Microchip Technology

SIC 2N-CH 1700V 676A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 676A (Tc)
Rds On (Max) @ Id, Vgs: 3.75mOhm @ 360A, 20V
Vgs(th) (Max) @ Id: 3.3V @ 30mA
Gate Charge (Qg) (Max) @ Vgs: 2136nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 1000V
Power - Max: 3kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

Request a Quote

-

1700V (1.7kV)

676A (Tc)

3.75mOhm @ 360A, 20V

3.3V @ 30mA

2136nC @ 20V

39600pF @ 1000V

3kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

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MSCSM120AM042CT6AG

Microchip Technology

SIC 2N-CH 1200V 495A SP6C

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Power - Max: 2.031kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C

封装: -

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1200V (1.2kV)

495A (Tc)

5.2mOhm @ 240A, 20V

2.8V @ 6mA

1392nC @ 20V

18.1pF @ 1000V

2.031kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C