页 52 - IXYS 产品 | 深圳黑森尔电子
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IXYS 产品

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页  52/183
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IXST30N60B2D1
IXYS

IGBT 600V 48A 250W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 30ns/130ns
  • Test Condition: 400V, 24A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存4,928
IXGP2N100
IXYS

IGBT 1000V 4A 25W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 4A
  • Current - Collector Pulsed (Icm): 8A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 2A
  • Power - Max: 25W
  • Switching Energy: 560µJ (off)
  • Input Type: Standard
  • Gate Charge: 7.8nC
  • Td (on/off) @ 25°C: 15ns/300ns
  • Test Condition: 800V, 2A, 150 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存2,320
IXYH50N65C3
IXYS

IGBT 650V 130A 600W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 130A
  • Current - Collector Pulsed (Icm): 250A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
  • Power - Max: 600W
  • Switching Energy: 1.3mJ (on), 370µJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 22ns/80ns
  • Test Condition: 400V, 36A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
封装: TO-247-3
库存2,100
MID150-12A4
IXYS

MOD IGBT RBSOA 1200V 180A Y3-DCB

  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 180A
  • Power - Max: 760W
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
  • Current - Collector Cutoff (Max): 7.5mA
  • Input Capacitance (Cies) @ Vce: 6.6nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y3-DCB
  • Supplier Device Package: Y3-DCB
封装: Y3-DCB
库存6,304
IXGN120N60A3D1
IXYS

IGBT 200A 600V SOT-227B

  • IGBT Type: PT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 595W
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
  • Current - Collector Cutoff (Max): 650µA
  • Input Capacitance (Cies) @ Vce: 14.8nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封装: SOT-227-4, miniBLOC
库存2,400
IXFK260N17T
IXYS

MOSFET N-CH 170V 260A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 170V
  • Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1670W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
封装: TO-264-3, TO-264AA
库存6,160
hot IXKR40N60C
IXYS

MOSFET N-CH 600V 38A ISOPLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 25A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247?
  • Package / Case: ISOPLUS247?
封装: ISOPLUS247?
库存5,248
IXTT10P50
IXYS

MOSFET P-CH 500V 10A TO-268

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存3,264
IXFX120N30P3
IXYS

MOSFET N-CH 300V 120A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8630pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1130W (Tc)
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
封装: TO-247-3
库存4,416
IXFA270N06T3
IXYS

60V/270A TRENCHT3 HIPERFET MOSFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AA
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,264
IXTA52P10P
IXYS

MOSFET P-CH 100V 52A TO-263

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2845pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存17,112
VHFD37-14IO1
IXYS

RECT BRIDGE 1PH 1400V V1A-PAK

  • Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
  • Number of SCRs, Diodes: 2 SCRs, 4 Diodes
  • Voltage - Off State: 1400V
  • Current - On State (It (AV)) (Max): 36A
  • Current - On State (It (RMS)) (Max): -
  • Voltage - Gate Trigger (Vgt) (Max): 1V
  • Current - Gate Trigger (Igt) (Max): 65mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 320A, 350A
  • Current - Hold (Ih) (Max): 100mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: V1A-PAK
封装: V1A-PAK
库存3,488
MCO100-16IO1
IXYS

MOD THYRISTOR SGL 1600V SOT-227B

  • Structure: Single
  • Number of SCRs, Diodes: 1 SCR
  • Voltage - Off State: 1600V
  • Current - On State (It (AV)) (Max): 99A
  • Current - On State (It (RMS)) (Max): 156A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1500A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
封装: SOT-227-4, miniBLOC
库存4,256
hot DSEI60-12A
IXYS

DIODE GEN PURP 1.2KV 52A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 52A
  • Voltage - Forward (Vf) (Max) @ If: 2.55V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 2.2mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-247-2
库存15,132
DSA60C45PB
IXYS

DIODE ARRAY SCHOTTKY 45V TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 790mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 900µA @ 45V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存3,392
hot DSEK60-06A
IXYS

DIODE ARRAY GP 600V 30A TO247AD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 37A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-247AD
封装: TO-3P-3 Full Pack
库存6,144
VBO19-12NO7
IXYS

DIODE BRIDGE 21A 1200V SLIM-PAC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 21A
  • Voltage - Forward (Vf) (Max) @ If: 1.12V @ 7A
  • Current - Reverse Leakage @ Vr: 300µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Slim-PAC
  • Supplier Device Package: Slim-PAC
封装: Slim-PAC
库存5,856
VUE75-06NO7
IXYS

DIODE BRIDGE FAST 600V ECO-PAC1

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 86A
  • Voltage - Forward (Vf) (Max) @ If: 1.57V @ 30A
  • Current - Reverse Leakage @ Vr: 250µA @ 600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC1
  • Supplier Device Package: ECO-PAC1
封装: ECO-PAC1
库存6,036
hot IXDN409YI
IXYS

IC MOSFET DRVR 9A LOSIDE TO263-5

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 10ns, 10ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
  • Supplier Device Package: TO-263 (D2Pak)
封装: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
库存17,052
IXDD509SIAT/R
IXYS

IC GATE DRIVER 9A 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 30 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 23ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存2,608
IXFA12N65X2
IXYS

MOSFET N-CH 650V 12A TO263AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AA (IXFA)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存864
M1022LC120
IXYS

DIODE GEN PURP 1.2KV 1022A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 1022A
  • Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -40°C ~ 125°C
封装: -
Request a Quote
IXFA12N50P-TRL
IXYS

MOSFET N-CH 500V 12A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
Request a Quote
IXGT6N170-TRL
IXYS

IGBT 1700V 12A TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 12 A
  • Current - Collector Pulsed (Icm): 24 A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 6A
  • Power - Max: 75 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 20 nC
  • Td (on/off) @ 25°C: 40ns/250ns
  • Test Condition: 1360V, 6A, 33Ohm, 15V
  • Reverse Recovery Time (trr): 36 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封装: -
Request a Quote
M0437WC140
IXYS

DIODE GEN PURP 1.4KV 437A W1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 437A
  • Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 635 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, A-PUK
  • Supplier Device Package: W1
  • Operating Temperature - Junction: -40°C ~ 125°C
封装: -
Request a Quote
MDNA50P2200TG
IXYS

DIODE MOD GP 2.2KV 50A TO240AA

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io) (per Diode): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 2200 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
  • Supplier Device Package: TO-240AA
封装: -
Request a Quote
IXTY90N055T2-TRL
IXYS

MOSFET N-CH 55V 90A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
Request a Quote
MCNA40P2200TA
IXYS

BIPOLAR MODULE - THYRISTOR TO-2

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 2.2 kV
  • Current - On State (It (AV)) (Max): 40 A
  • Current - On State (It (RMS)) (Max): 63 A
  • Voltage - Gate Trigger (Vgt) (Max): 1.4 V
  • Current - Gate Trigger (Igt) (Max): 70 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 540A
  • Current - Hold (Ih) (Max): 100 mA
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
封装: -
Request a Quote
IXGA48N60A3-TRL
IXYS

IXGA48N60A3 TRL

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 120 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
  • Power - Max: 300 W
  • Switching Energy: 950µJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 25ns/334ns
  • Test Condition: 480V, 32A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 30 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
封装: -
库存11,865
W5984TE360
IXYS

DIODE GEN PURP 3.6KV 5984A W94

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3600 V
  • Current - Average Rectified (Io): 5984A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 47 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W94
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
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