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IXYS |
IGBT 600V 75A 830W PLUS TO-247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 500A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
- Power - Max: 830W
- Switching Energy: 1.7mJ (on), 1mJ (off)
- Input Type: Standard
- Gate Charge: 370nC
- Td (on/off) @ 25°C: 40ns/120ns
- Test Condition: 400V, 80A, 1 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PLUS247?-3
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封装: TO-247-3 |
库存7,040 |
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IXYS |
IGBT 600V 75A 300W TO247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 200A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
- Power - Max: 300W
- Switching Energy: 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 110nC
- Td (on/off) @ 25°C: 50ns/200ns
- Test Condition: 480V, 50A, 2.7 Ohm, 15V
- Reverse Recovery Time (trr): 50ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PLUS247?-3
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封装: TO-247-3 |
库存6,944 |
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IXYS |
IGBT 1700V 170A 830W PLUS247
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Current - Collector (Ic) (Max): 170A
- Current - Collector Pulsed (Icm): 600A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
- Power - Max: 830W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 425nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PLUS247?-3
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封装: TO-247-3 |
库存3,424 |
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IXYS |
IGBT 600V ISOPLUS247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: ISOPLUS247?
- Supplier Device Package: ISOPLUS247?
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封装: ISOPLUS247? |
库存7,872 |
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IXYS |
MOD IGBT SIXPACK RBSOA 1200V E1
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 29A
- Power - Max: 130W
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 20A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 1.18nF @ 25V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E1
- Supplier Device Package: E1
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封装: E1 |
库存4,480 |
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IXYS |
MOSFET N-CH
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: Die
- Package / Case: Die
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封装: Die |
库存3,424 |
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IXYS |
MOSFET N-CH 85V 230A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 550W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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封装: TO-3P-3, SC-65-3 |
库存3,600 |
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IXYS |
MOSFET N-CH 800V 25A ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
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封装: ISOPLUS247? |
库存7,392 |
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IXYS |
MOSFET N-CH 1500V 12A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1500V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 890W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存3,088 |
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IXYS |
MOSFET N-CH 500V 30A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 460W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存5,264 |
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IXYS |
MOSFET N-CH 650V 52A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 660W (Tc)
- Rds On (Max) @ Id, Vgs: 68 mOhm @ 26A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存5,040 |
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IXYS |
MOSFET N-CH 500V 55A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 560W (Tc)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 27.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存9,948 |
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IXYS |
MOSFET N-CH 600V 50A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1040W (Tc)
- Rds On (Max) @ Id, Vgs: 145 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存103,464 |
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IXYS |
RF MOSFET N-CHANNEL DE275
- Transistor Type: N-Channel
- Frequency: 100MHz
- Gain: -
- Voltage - Test: -
- Current Rating: 1mA
- Noise Figure: -
- Current - Test: -
- Power - Output: 590W
- Voltage - Rated: 1000V
- Package / Case: 6-SMD, Flat Lead Exposed Pad
- Supplier Device Package: DE275
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封装: 6-SMD, Flat Lead Exposed Pad |
库存5,616 |
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IXYS |
RECT BRIDGE 3PH 120V 1200V V2
- Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
- Number of SCRs, Diodes: 3 SCRs, 3 Diodes
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 120A
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 750A @ 50MHz
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: V2-PAK
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封装: V2-PAK |
库存2,256 |
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IXYS |
THYRISTOR MODULE 1600V TO-240AA
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 116A
- Current - On State (It (RMS)) (Max): 180A
- Voltage - Gate Trigger (Vgt) (Max): 2.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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封装: TO-240AA |
库存4,304 |
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IXYS |
MOD THYRISTOR DUAL 1200V TO240AA
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 32A
- Current - On State (It (RMS)) (Max): 50A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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封装: TO-240AA |
库存5,280 |
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IXYS |
DIODE MODULE 51KV 2A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 51000V
- Current - Average Rectified (Io) (per Diode): 2A
- Voltage - Forward (Vf) (Max) @ If: 36.8V @ 12A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 51000V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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封装: Module |
库存5,440 |
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IXYS |
DIODE MODULE 1.2KV 60A SOT227B
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 60A
- Voltage - Forward (Vf) (Max) @ If: 2.42V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 1mA @ 1200V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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封装: SOT-227-4, miniBLOC |
库存6,784 |
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IXYS |
DIODE ARRAY SCHOTTKY 600V DE150
- Diode Configuration: 3 Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Lead Exposed Pad
- Supplier Device Package: DE150
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封装: 6-SMD, Flat Lead Exposed Pad |
库存5,840 |
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IXYS |
RECT BRIDGE 3PH 70A 800V FO-T-A
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
- Current - Reverse Leakage @ Vr: 500µA @ 800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: FO-T-A
- Supplier Device Package: FO-T-A
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封装: FO-T-A |
库存2,448 |
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IXYS |
RECT BRIDGE 3PH 88A 1800V PWS-D
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1800V
- Current - Average Rectified (Io): 88A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
- Current - Reverse Leakage @ Vr: 300µA @ 1800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-D
- Supplier Device Package: PWS-D
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封装: PWS-D |
库存5,088 |
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IXYS |
IC GATE DRIVER 14A 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 1V, 2.5V
- Current - Peak Output (Source, Sink): 14A, 14A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 22ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存7,616 |
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IXYS |
THYRISTOR RADIAL
- Voltage - Breakover: 1500V
- Voltage - Off State: -
- Voltage - On State: -
- Current - Peak Pulse (8/20µs): -
- Current - Peak Pulse (10/1000µs): -
- Current - Hold (Ih): 20mA
- Number of Elements: 1
- Capacitance: -
- Mounting Type: Through Hole
- Package / Case: Radial
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封装: Radial |
库存5,634 |
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IXYS |
MONO SOLAR CELL 22MM X 35MM
- Power (Watts) - Max: 109mW
- Current @ Pmpp: 18mA
- Voltage @ Pmpp: 6.06V
- Current Short Circuit (Isc): 20mA
- Type: Monocrystalline
- Voltage - Open Circuit: 7.56V
- Operating Temperature: -
- Package / Case: Cell (12)
- Size / Dimension: 1.378" L x 0.276" W x 0.079" H (35.00mm x 22.00mm x 2.00mm)
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封装: Cell (12) |
库存6,984 |
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IXYS |
DIODE ARRAY GP 1200V 28A TO268AA
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 28A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 55 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2 mA @ 1200 V
- Operating Temperature - Junction: -40°C ~ 180°C
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
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封装: - |
Request a Quote |
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IXYS |
MOSFET N-CH 200V 36A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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封装: - |
库存483 |
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IXYS |
IGBT
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 105 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: 230 W
- Switching Energy: 430µJ (on), 650µJ (off)
- Input Type: Standard
- Gate Charge: 30 nC
- Td (on/off) @ 25°C: 19ns/80ns
- Test Condition: 400V, 20A, 20Ohm, 15V
- Reverse Recovery Time (trr): 34 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AA
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封装: - |
Request a Quote |
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IXYS |
MOSFET N-CH TO263
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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封装: - |
Request a Quote |
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IXYS |
SCR 3.8KV 1228A W10
- Voltage - Off State: 3.8 kV
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 300 mA
- Voltage - On State (Vtm) (Max): 2.8 V
- Current - On State (It (AV)) (Max): 634 A
- Current - On State (It (RMS)) (Max): 1228 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 100 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 7700A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: TO-200AB, B-PuK
- Supplier Device Package: W10
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封装: - |
Request a Quote |
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