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IXYS |
IGBT 1200V 70A 300W TO247AD
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 70A
- Current - Collector Pulsed (Icm): 140A
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
- Power - Max: 300W
- Switching Energy: 3mJ (off)
- Input Type: Standard
- Gate Charge: 170nC
- Td (on/off) @ 25°C: 50ns/150ns
- Test Condition: 960V, 35A, 5 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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封装: TO-247-3 |
库存4,016 |
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IXYS |
IGBT 1200V 38A 165W TO247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 38A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Power - Max: 165W
- Switching Energy: 1.55mJ (on), 1.7mJ (off)
- Input Type: Standard
- Gate Charge: 47nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 15A, 56 Ohm, 15V
- Reverse Recovery Time (trr): 350ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (HB)
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封装: TO-247-3 |
库存3,200 |
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IXYS |
IGBT 1400V TO-247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1400V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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封装: TO-247-3 |
库存7,568 |
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IXYS |
MOSFET N-CH TO-247AD
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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封装: - |
库存7,392 |
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IXYS |
MOSFET N-CH 100V 75A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 37.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存12,132 |
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IXYS |
MOSFET N-CH 250V 30A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存390,000 |
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IXYS |
MOSFET N-CH 500V 16A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 199nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 695W (Tc)
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 8A, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存3,312 |
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IXYS |
MOSFET N-CH 100V 110A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存6,544 |
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IXYS |
MOSFET N-CH 600V 24A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 175 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存2,896 |
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IXYS |
MOSFET N-CH 150V 90A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 455W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 45A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存390,000 |
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IXYS |
MOSFET N-CH 40V 300A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,888 |
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IXYS |
MOSFET N-CH 150V 44A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存49,200 |
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IXYS |
MOSFET N-CH 600V 22A TO3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 360 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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封装: TO-3P-3, SC-65-3 |
库存5,616 |
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IXYS |
MOSFET N-CH 250V 60A TO263AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 320W (Tc)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AA
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,632 |
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IXYS |
MOSFET N-CHANNEL 700V 8A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,312 |
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IXYS |
MOSFET N-CH 500V 53A SOT-227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 53A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 610nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 735W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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封装: SOT-227-4, miniBLOC |
库存12,894 |
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IXYS |
RECT BRIDGE 3PH 34A 1600V KAMM
- Structure: Bridge, 3-Phase - SCRs/Diodes
- Number of SCRs, Diodes: 3 SCRs, 3 Diodes
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 34A
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): 1V
- Current - Gate Trigger (Igt) (Max): 65mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 320A, 340A
- Current - Hold (Ih) (Max): 100mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: KAMM
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封装: KAMM |
库存4,000 |
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IXYS |
MOD THYRISTOR DUAL 1600V I4-PAC
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 30A
- Current - On State (It (RMS)) (Max): 47A
- Voltage - Gate Trigger (Vgt) (Max): 1V
- Current - Gate Trigger (Igt) (Max): 55mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 430A
- Current - Hold (Ih) (Max): 100mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac?-5
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封装: i4-Pac?-5 |
库存7,984 |
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IXYS |
DIODE ARRAY SCHOTTKY 100V TO220
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 820mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 100V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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封装: TO-220-3 |
库存51,600 |
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IXYS |
DIODE MODULE 1.8KV 165A Y4-M6
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800V
- Current - Average Rectified (Io) (per Diode): 165A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 300A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20mA @ 1800V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Y4-M6
- Supplier Device Package: Y4-M6
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封装: Y4-M6 |
库存3,920 |
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IXYS |
RECT BRIDGE 1200V 132A DPAK
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 132A
- Voltage - Forward (Vf) (Max) @ If: -
- Current - Reverse Leakage @ Vr: 10µA @ 1200V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 9-SMD Module
- Supplier Device Package: ISOPLUS-SMPD?.B
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封装: 9-SMD Module |
库存6,736 |
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IXYS |
DIODE BRIDGE 1600V 54A ECO-PAC1
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 54A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 20A
- Current - Reverse Leakage @ Vr: 40µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC1
- Supplier Device Package: ECO-PAC1
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封装: ECO-PAC1 |
库存5,936 |
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IXYS |
IC DRIVER HALF BRDG 600MA 16-SOI
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 35 V
- Logic Voltage - VIL, VIH: 6V, 7V
- Current - Peak Output (Source, Sink): 600mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 650V
- Rise / Fall Time (Typ): 23ns, 22ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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封装: 16-SOIC (0.295", 7.50mm Width) |
库存3,952 |
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IXYS |
MOSFET N-CH 1000V 1.6A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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封装: - |
Request a Quote |
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IXYS |
MOSFET N-CH 22A SOT-227B
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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封装: - |
Request a Quote |
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IXYS |
MOSFET N-CH 100V 72A TO268
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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封装: - |
Request a Quote |
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IXYS |
IGBT 1200V 110A GNX4 XPT PLUS247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 375 A
- Current - Collector Pulsed (Icm): 900 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
- Power - Max: 1360 W
- Switching Energy: 2.5mJ (on), 8.4mJ (off)
- Input Type: Standard
- Gate Charge: 305 nC
- Td (on/off) @ 25°C: 42ns/550ns
- Test Condition: 600V, 50A, 1.5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
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封装: - |
库存21 |
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IXYS |
IGBT 140A 1200V SOT227B MINIBLOC
- IGBT Type: PT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 380 A
- Power - Max: 1070 W
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
- Current - Collector Cutoff (Max): 25 µA
- Input Capacitance (Cies) @ Vce: 8.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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封装: - |
库存9 |
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IXYS |
MOSFET N-CH 650V 34A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 540W (Tc)
- Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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封装: - |
Request a Quote |
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IXYS |
MOSFET N-CH 150V 76A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 350W (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 38A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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