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IXYS |
IGBT 1200V 30A 192W TO247AD
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 30A
- Current - Collector Pulsed (Icm): 60A
- Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 15A
- Power - Max: 192W
- Switching Energy: 1.4mJ (off)
- Input Type: Standard
- Gate Charge: 86nC
- Td (on/off) @ 25°C: 25ns/165ns
- Test Condition: 960V, 15A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 165ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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封装: TO-247-3 |
库存3,568 |
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IXYS |
IGBT 600V 190A 830W TO247AD
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 190A
- Current - Collector Pulsed (Icm): 380A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
- Power - Max: 830W
- Switching Energy: 2mJ (on), 950µJ (off)
- Input Type: Standard
- Gate Charge: 150nC
- Td (on/off) @ 25°C: 30ns/90ns
- Test Condition: 360V, 70A, 2 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXXH)
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封装: TO-247-3 |
库存5,456 |
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IXYS |
IGBT 1200V 75A 300W TO268
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 180A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 45A
- Power - Max: 300W
- Switching Energy: 14mJ (off)
- Input Type: Standard
- Gate Charge: 170nC
- Td (on/off) @ 25°C: 55ns/370ns
- Test Condition: 960V, 45A, 5 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存3,312 |
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IXYS |
MODULE IGBT CBI E1
- IGBT Type: -
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 30A
- Power - Max: 130W
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 30A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 1.18nF @ 25V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E1
- Supplier Device Package: E1
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封装: E1 |
库存3,328 |
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IXYS |
MOSFET N-CH 4000V .3A PLUS 220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 4000V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Rds On (Max) @ Id, Vgs: 290 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PLUS-220SMD
- Package / Case: PLUS-220SMD
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封装: PLUS-220SMD |
库存2,992 |
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IXYS |
MOSFET N-CH 300V 73A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 73A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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封装: SOT-227-4, miniBLOC |
库存2,800 |
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IXYS |
MOSFET N-CH 650V 12A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存7,024 |
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IXYS |
MOSFET N-CH 1000V 6A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 3A, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存7,104 |
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IXYS |
SCR THYRISTOR SGL 1800V WC-800
- Structure: Single
- Number of SCRs, Diodes: 1 SCR
- Voltage - Off State: 1800V
- Current - On State (It (AV)) (Max): -
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): -
- Current - Hold (Ih) (Max): -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: WC-800
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封装: WC-800 |
库存4,944 |
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IXYS |
SCR THYRISTOR CA 2000V WC-500
- Structure: Common Cathode - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 2000V
- Current - On State (It (AV)) (Max): 545A
- Current - On State (It (RMS)) (Max): 1294A
- Voltage - Gate Trigger (Vgt) (Max): 3V
- Current - Gate Trigger (Igt) (Max): 300mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
- Current - Hold (Ih) (Max): 1A
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: WC-500
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封装: WC-500 |
库存3,024 |
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IXYS |
MOD THYRISTOR DUAL 1200V WC-500
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 545A
- Current - On State (It (RMS)) (Max): 1294A
- Voltage - Gate Trigger (Vgt) (Max): 3V
- Current - Gate Trigger (Igt) (Max): 300mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
- Current - Hold (Ih) (Max): 1A
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: WC-500
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封装: WC-500 |
库存3,904 |
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IXYS |
MOD THYRISTOR/DIODE 800V Y2-DCB
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 800V
- Current - On State (It (AV)) (Max): 250A
- Current - On State (It (RMS)) (Max): 400A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 9000A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y2-DCB
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封装: Y2-DCB |
库存5,344 |
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IXYS |
DIODE GEN PURP 800V 30A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40µA @ 800V
- Capacitance @ Vr, F: 10pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
- Operating Temperature - Junction: -40°C ~ 175°C
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,560 |
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IXYS |
DIODE MODULE 1.2KV 305A Y2-DCB
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 305A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 600A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40mA @ 1200V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Y2-DCB
- Supplier Device Package: Y2-DCB
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封装: Y2-DCB |
库存5,472 |
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IXYS |
DIODE MODULE 1.6KV 60A SOT227B
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io) (per Diode): 60A
- Voltage - Forward (Vf) (Max) @ If: 2.01V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 230ns
- Current - Reverse Leakage @ Vr: 200µA @ 1600V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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封装: SOT-227-4, miniBLOC |
库存2,928 |
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IXYS |
DIODE ARRAY GP 1600V 28A TO268AA
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io) (per Diode): 28A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 55A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 1600V
- Operating Temperature - Junction: -40°C ~ 180°C
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存4,512 |
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IXYS |
DIODE BRIDGE 45A 1800V FO-T-A
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1800V
- Current - Average Rectified (Io): 45A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
- Current - Reverse Leakage @ Vr: 500µA @ 1800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: FO-T-A
- Supplier Device Package: FO-T-A
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封装: FO-T-A |
库存7,232 |
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IXYS |
DIODE RECTIFER TRIPLE 1800V SMPD
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1800V
- Current - Average Rectified (Io): 90A
- Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
- Current - Reverse Leakage @ Vr: 40µA @ 1800V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 9-SMD Module
- Supplier Device Package: ISOPLUS-SMPD?.B
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封装: 9-SMD Module |
库存6,960 |
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IXYS |
MDNA360UB2200PTED-PC
- Structure: -
- Number of SCRs, Diodes: -
- Voltage - Off State: -
- Current - On State (It (AV)) (Max): -
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): -
- Current - Hold (Ih) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
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封装: - |
Request a Quote |
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IXYS |
MOSFET ULTRA X4 200V 60A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 (IXTP)
- Package / Case: TO-220-3
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封装: - |
库存1,056 |
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IXYS |
DIODE ARR SCHOTT 30V 25A TO263AA
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io) (per Diode): 25A
- Voltage - Forward (Vf) (Max) @ If: 440 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 30 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AA
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封装: - |
Request a Quote |
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IXYS |
MOSFET N-CH 1000V 44A SOT227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 830W (Tc)
- Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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封装: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 1.4KV 859A W4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400 V
- Current - Average Rectified (Io): 859A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1750 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3 µs
- Current - Reverse Leakage @ Vr: 50 mA @ 1400 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: W4
- Operating Temperature - Junction: -40°C ~ 125°C
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封装: - |
Request a Quote |
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IXYS |
MOSFET P-CH 100V 26A TO252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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封装: - |
Request a Quote |
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IXYS |
SCR 2KV 5922A W13
- Voltage - Off State: 2 kV
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 300 mA
- Voltage - On State (Vtm) (Max): 1.4 V
- Current - On State (It (AV)) (Max): 3012 A
- Current - On State (It (RMS)) (Max): 5922 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 200 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 49700A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: TO-200AF
- Supplier Device Package: W13
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封装: - |
Request a Quote |
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IXYS |
MOSFET P-CH 50V 32A TO263
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 39mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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封装: - |
Request a Quote |
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IXYS |
DISC IGBT NPT VERY HI VOLTAGE TO
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 2500 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 105 A
- Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
- Power - Max: 150 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 53 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
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封装: - |
Request a Quote |
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IXYS |
DIODE MOD GP 1600V 700A COMPACK
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io) (per Diode): 700A
- Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 700 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 1600 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: ComPack
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封装: - |
Request a Quote |
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IXYS |
SCR 2KV 2313A WP1
- Voltage - Off State: 2 kV
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 300 mA
- Voltage - On State (Vtm) (Max): 2.46 V
- Current - On State (It (AV)) (Max): 1174 A
- Current - On State (It (RMS)) (Max): 2313 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 100 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: TO-200AB, B-PuK
- Supplier Device Package: WP1
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封装: - |
Request a Quote |
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IXYS |
MOSFET N-CH 200V 36A TO263AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AA (IXFA)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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封装: - |
库存555 |
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