页 8 - IXYS 产品 - 晶体管 - FET，MOSFET - 单

IXFN170N65X2

IXYS

MOSFET N-CH 650V 170A SOT227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27000 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1170W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

封装: -

库存60

MOSFET (Metal Oxide)

650 V

170A (Tc)

10V

5V @ 8mA

434 nC @ 10 V

27000 pF @ 25 V

±30V

-

1170W (Tc)

13mOhm @ 85A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXFQ8N85X

IXYS

MOSFET N-CH 850V 8A TO3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

封装: -

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MOSFET (Metal Oxide)

850 V

8A (Tc)

10V

5.5V @ 250µA

17 nC @ 10 V

654 pF @ 25 V

±30V

-

200W (Tc)

850mOhm @ 4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-3P

TO-3P-3, SC-65-3

IXFY13N60X3

IXYS

DISCRETE MOSFET 13A 600V X3 TO25

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

IXFK140N60X3

IXYS

DISCRETE MOSFET 140A 600V X3 TO2

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

IXFH90N65X3

IXYS

MOSFET 90A 650V X3 TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.2V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXFH)
Package / Case: TO-247-3

封装: -

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MOSFET (Metal Oxide)

650 V

90A (Tc)

10V

5.2V @ 4mA

95 nC @ 10 V

6080 pF @ 25 V

±20V

-

960W (Tc)

33mOhm @ 45A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 (IXFH)

TO-247-3

IXFP36N55X2

IXYS

IXFP36N55X2

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

IXFN220N20X3

IXYS

MOSFET N-CH 200V 160A SOT227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

封装: -

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MOSFET (Metal Oxide)

200 V

160A (Tc)

10V

4.5V @ 4mA

204 nC @ 10 V

13600 pF @ 25 V

±20V

-

390W (Tc)

6.2mOhm @ 110A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXTY2N100P-TRL

IXYS

MOSFET N-CH 1000V 2A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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MOSFET (Metal Oxide)

1000 V

2A (Tc)

10V

4.5V @ 100µA

24.3 nC @ 10 V

655 pF @ 25 V

±20V

-

86W (Tc)

7.5Ohm @ 1A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPAK (2 Leads + Tab), SC-63

IXFK240N25X3

IXYS

MOSFET N-CH 250V 240A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 120A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264
Package / Case: TO-264-3, TO-264AA

封装: -

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MOSFET (Metal Oxide)

250 V

240A (Tc)

10V

4.5V @ 8mA

345 nC @ 10 V

23800 pF @ 25 V

±20V

-

1250W (Tc)

5mOhm @ 120A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-264

TO-264-3, TO-264AA

IXFP4N100PM

IXYS

MOSFET N-CH 1000V 2.1A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Isolated Tab
Package / Case: TO-220-3 Full Pack, Isolated Tab

封装: -

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MOSFET (Metal Oxide)

1000 V

2.1A (Tc)

10V

6V @ 250µA

26 nC @ 10 V

1456 pF @ 25 V

±20V

-

40W (Tc)

3.3Ohm @ 2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220 Isolated Tab

TO-220-3 Full Pack, Isolated Tab

IXFP8N85XM

IXYS

MOSFET N-CH 850V 8A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 850 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Isolated Tab
Package / Case: TO-220-3 Full Pack, Isolated Tab

封装: -

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MOSFET (Metal Oxide)

850 V

8A (Tc)

10V

5.5V @ 250µA

17 nC @ 10 V

654 pF @ 25 V

±30V

-

33W (Tc)

850mOhm @ 4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220 Isolated Tab

TO-220-3 Full Pack, Isolated Tab

IXTA36P15P-TRL

IXYS

MOSFET P-CH 150V 36A TO263

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存5,556

MOSFET (Metal Oxide)

150 V

36A (Tc)

10V

4.5V @ 250µA

55 nC @ 10 V

3100 pF @ 25 V

±20V

-

300W (Tc)

110mOhm @ 18A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTQ34N65X2M

IXYS

DISCRETE MOSFET 34A 650V X2 TO3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

封装: -

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MOSFET (Metal Oxide)

650 V

34A (Tc)

10V

5V @ 250µA

54 nC @ 10 V

3000 pF @ 25 V

±30V

-

43W (Tc)

96mOhm @ 17A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-3P

TO-3P-3, SC-65-3

IXFN120N60X3

IXYS

DISCRETE MOSFET 120A 600V X3 SOT

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

IXFP36N60X3

IXYS

MOSFET ULTRA JCT 600V 36A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

封装: -

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MOSFET (Metal Oxide)

600 V

36A (Tc)

10V

5V @ 2.5mA

29 nC @ 10 V

2030 pF @ 25 V

±20V

-

446W (Tc)

90mOhm @ 18A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220

TO-220-3

IXFA8N65X2

IXYS

MOSFET N-CH 650V 8A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 150W (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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MOSFET (Metal Oxide)

650 V

8A (Tc)

10V

5V @ 250µA

11 nC @ 10 V

790 pF @ 25 V

±30V

-

150W (Ta)

450mOhm @ 4A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFP12N65X3

IXYS

DISCRETE MOSFET 12A 650V X3 TO22

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

IXFP12N65X2

IXYS

MOSFET N-CH 650V 12A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

封装: -

库存870

MOSFET (Metal Oxide)

650 V

12A (Tc)

10V

5V @ 250µA

18.5 nC @ 10 V

1134 pF @ 25 V

±30V

-

180W (Tc)

310mOhm @ 6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

MKE38RK600DFEL-TUB

IXYS

MOSFET N-CH 600V 50A SMPD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: ISOPLUS-SMPD™.B
Package / Case: 9-SMD Module

封装: -

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MOSFET (Metal Oxide)

600 V

50A (Tc)

10V

3.5V @ 3mA

190 nC @ 10 V

6800 pF @ 100 V

±20V

-

45mOhm @ 44A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

ISOPLUS-SMPD™.B

9-SMD Module

MKE38RK600DFEL-TRR

IXYS

MOSFET N-CH 600V 50A SMPD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: ISOPLUS-SMPD™.B
Package / Case: 9-SMD Module

封装: -

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MOSFET (Metal Oxide)

600 V

50A (Tc)

10V

3.5V @ 3mA

190 nC @ 10 V

6800 pF @ 100 V

±20V

-

45mOhm @ 44A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

ISOPLUS-SMPD™.B

9-SMD Module

IXFH40N80XA

IXYS

MOSFET N-CH 4A TO247

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

IXTA60N20X4

IXYS

MOSFET ULTRA X4 200V 60A TO-263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (IXTA)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存2,301

MOSFET (Metal Oxide)

200 V

60A (Tc)

10V

4.5V @ 250µA

33 nC @ 10 V

2450 pF @ 25 V

±20V

-

250W (Tc)

21mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-263 (IXTA)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFX52N100X

IXYS

MOSFET N-CH 1000V 52A PLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
Package / Case: TO-247-3 Variant

封装: -

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MOSFET (Metal Oxide)

1000 V

52A (Tc)

10V

6V @ 4mA

245 nC @ 10 V

6725 pF @ 25 V

±30V

-

1250W (Tc)

125mOhm @ 26A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS247™-3

TO-247-3 Variant

IXTA120P065T-TRL

IXYS

MOSFET P-CH 65V 120A TO263

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 65 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 298W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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MOSFET (Metal Oxide)

65 V

120A (Tc)

10V

4V @ 250µA

185 nC @ 10 V

13200 pF @ 25 V

±15V

-

298W (Tc)

10mOhm @ 60A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFX300N20X3

IXYS

MOSFET N-CH 200V 300A PLUS247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 150A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
Package / Case: TO-247-3 Variant

封装: -

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MOSFET (Metal Oxide)

200 V

300A (Tc)

10V

4.5V @ 8mA

375 nC @ 10 V

23800 pF @ 25 V

±20V

-

1250W (Tc)

4mOhm @ 150A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS247™-3

TO-247-3 Variant

IXTY90N055T2-TRL

IXYS

MOSFET N-CH 55V 90A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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MOSFET (Metal Oxide)

55 V

90A (Tc)

10V

4V @ 250µA

42 nC @ 10 V

2770 pF @ 25 V

±20V

-

150W (Tc)

8.4mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPAK (2 Leads + Tab), SC-63

IXFP8N65X2M

IXYS

MOSFET N-CH 650V 8A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Isolated Tab
Package / Case: TO-220-3 Full Pack, Isolated Tab

封装: -

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MOSFET (Metal Oxide)

650 V

8A (Tc)

10V

5V @ 250µA

11 nC @ 10 V

790 pF @ 25 V

±30V

-

150W (Tc)

450mOhm @ 4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220 Isolated Tab

TO-220-3 Full Pack, Isolated Tab

IXTF2N300P3

IXYS

MOSFET N-CH 3000V 1.6A I4PAC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 3000 V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS i4-PAC™
Package / Case: ISOPLUSi5-PAK™

封装: -

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MOSFET (Metal Oxide)

3000 V

1.6A (Tc)

10V

5V @ 250µA

73 nC @ 10 V

1890 pF @ 25 V

±20V

-

160W (Tc)

21Ohm @ 1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUS i4-PAC™

ISOPLUSi5-PAK™

IXFH32N100X

IXYS

MOSFET N-CH 1000V 32A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

封装: -

库存3

MOSFET (Metal Oxide)

1000 V

32A (Tc)

10V

6V @ 4mA

130 nC @ 10 V

4075 pF @ 25 V

±30V

-

890W (Tc)

220mOhm @ 16A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247

TO-247-3

IXFP30N25X3

IXYS

MOSFET N-CHANNEL 250V 30A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

封装: -

库存297

MOSFET (Metal Oxide)

250 V

30A (Tc)

10V

4.5V @ 500µA

21 nC @ 10 V

1450 pF @ 25 V

±20V

-

176W (Tc)

60mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

零件编号	制造商	描述	封装	库存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFN170N65X2	IXYS	MOSFET N-CH 650V 170A SOT227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27000 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1170W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	封装: -	库存60	MOSFET (Metal Oxide)	650 V	170A (Tc)	10V	5V @ 8mA	434 nC @ 10 V	27000 pF @ 25 V	±30V	-	1170W (Tc)	13mOhm @ 85A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFQ8N85X	IXYS	MOSFET N-CH 850V 8A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	850 V	8A (Tc)	10V	5.5V @ 250µA	17 nC @ 10 V	654 pF @ 25 V	±30V	-	200W (Tc)	850mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXFY13N60X3	IXYS	DISCRETE MOSFET 13A 600V X3 TO25 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFK140N60X3	IXYS	DISCRETE MOSFET 140A 600V X3 TO2 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFH90N65X3	IXYS	MOSFET 90A 650V X3 TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.2V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXFH) Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	650 V	90A (Tc)	10V	5.2V @ 4mA	95 nC @ 10 V	6080 pF @ 25 V	±20V	-	960W (Tc)	33mOhm @ 45A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXFH)	TO-247-3
IXFP36N55X2	IXYS	IXFP36N55X2 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFN220N20X3	IXYS	MOSFET N-CH 200V 160A SOT227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	封装: -	Request a Quote	MOSFET (Metal Oxide)	200 V	160A (Tc)	10V	4.5V @ 4mA	204 nC @ 10 V	13600 pF @ 25 V	±20V	-	390W (Tc)	6.2mOhm @ 110A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTY2N100P-TRL	IXYS	MOSFET N-CH 1000V 2A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	2A (Tc)	10V	4.5V @ 100µA	24.3 nC @ 10 V	655 pF @ 25 V	±20V	-	86W (Tc)	7.5Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXFK240N25X3	IXYS	MOSFET N-CH 250V 240A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 120A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	250 V	240A (Tc)	10V	4.5V @ 8mA	345 nC @ 10 V	23800 pF @ 25 V	±20V	-	1250W (Tc)	5mOhm @ 120A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
IXFP4N100PM	IXYS	MOSFET N-CH 1000V 2.1A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	封装: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	2.1A (Tc)	10V	6V @ 250µA	26 nC @ 10 V	1456 pF @ 25 V	±20V	-	40W (Tc)	3.3Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
IXFP8N85XM	IXYS	MOSFET N-CH 850V 8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	封装: -	Request a Quote	MOSFET (Metal Oxide)	850 V	8A (Tc)	10V	5.5V @ 250µA	17 nC @ 10 V	654 pF @ 25 V	±30V	-	33W (Tc)	850mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
IXTA36P15P-TRL	IXYS	MOSFET P-CH 150V 36A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	库存5,556	MOSFET (Metal Oxide)	150 V	36A (Tc)	10V	4.5V @ 250µA	55 nC @ 10 V	3100 pF @ 25 V	±20V	-	300W (Tc)	110mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTQ34N65X2M	IXYS	DISCRETE MOSFET 34A 650V X2 TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	650 V	34A (Tc)	10V	5V @ 250µA	54 nC @ 10 V	3000 pF @ 25 V	±30V	-	43W (Tc)	96mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXFN120N60X3	IXYS	DISCRETE MOSFET 120A 600V X3 SOT FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFP36N60X3	IXYS	MOSFET ULTRA JCT 600V 36A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	36A (Tc)	10V	5V @ 2.5mA	29 nC @ 10 V	2030 pF @ 25 V	±20V	-	446W (Tc)	90mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IXFA8N65X2	IXYS	MOSFET N-CH 650V 8A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	MOSFET (Metal Oxide)	650 V	8A (Tc)	10V	5V @ 250µA	11 nC @ 10 V	790 pF @ 25 V	±30V	-	150W (Ta)	450mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFP12N65X3	IXYS	DISCRETE MOSFET 12A 650V X3 TO22 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFP12N65X2	IXYS	MOSFET N-CH 650V 12A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	封装: -	库存870	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	5V @ 250µA	18.5 nC @ 10 V	1134 pF @ 25 V	±30V	-	180W (Tc)	310mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
MKE38RK600DFEL-TUB	IXYS	MOSFET N-CH 600V 50A SMPD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ISOPLUS-SMPD™.B Package / Case: 9-SMD Module	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	50A (Tc)	10V	3.5V @ 3mA	190 nC @ 10 V	6800 pF @ 100 V	±20V	-	-	45mOhm @ 44A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	ISOPLUS-SMPD™.B	9-SMD Module
MKE38RK600DFEL-TRR	IXYS	MOSFET N-CH 600V 50A SMPD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ISOPLUS-SMPD™.B Package / Case: 9-SMD Module	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	50A (Tc)	10V	3.5V @ 3mA	190 nC @ 10 V	6800 pF @ 100 V	±20V	-	-	45mOhm @ 44A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	ISOPLUS-SMPD™.B	9-SMD Module
IXFH40N80XA	IXYS	MOSFET N-CH 4A TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA60N20X4	IXYS	MOSFET ULTRA X4 200V 60A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	库存2,301	MOSFET (Metal Oxide)	200 V	60A (Tc)	10V	4.5V @ 250µA	33 nC @ 10 V	2450 pF @ 25 V	±20V	-	250W (Tc)	21mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFX52N100X	IXYS	MOSFET N-CH 1000V 52A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3 Variant	封装: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	52A (Tc)	10V	6V @ 4mA	245 nC @ 10 V	6725 pF @ 25 V	±30V	-	1250W (Tc)	125mOhm @ 26A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3 Variant
IXTA120P065T-TRL	IXYS	MOSFET P-CH 65V 120A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 65 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	MOSFET (Metal Oxide)	65 V	120A (Tc)	10V	4V @ 250µA	185 nC @ 10 V	13200 pF @ 25 V	±15V	-	298W (Tc)	10mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFX300N20X3	IXYS	MOSFET N-CH 200V 300A PLUS247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 150A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3 Variant	封装: -	Request a Quote	MOSFET (Metal Oxide)	200 V	300A (Tc)	10V	4.5V @ 8mA	375 nC @ 10 V	23800 pF @ 25 V	±20V	-	1250W (Tc)	4mOhm @ 150A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3 Variant
IXTY90N055T2-TRL	IXYS	MOSFET N-CH 55V 90A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	Request a Quote	MOSFET (Metal Oxide)	55 V	90A (Tc)	10V	4V @ 250µA	42 nC @ 10 V	2770 pF @ 25 V	±20V	-	150W (Tc)	8.4mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXFP8N65X2M	IXYS	MOSFET N-CH 650V 8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	封装: -	Request a Quote	MOSFET (Metal Oxide)	650 V	8A (Tc)	10V	5V @ 250µA	11 nC @ 10 V	790 pF @ 25 V	±30V	-	150W (Tc)	450mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
IXTF2N300P3	IXYS	MOSFET N-CH 3000V 1.6A I4PAC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 3000 V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 21Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS i4-PAC™ Package / Case: ISOPLUSi5-PAK™	封装: -	Request a Quote	MOSFET (Metal Oxide)	3000 V	1.6A (Tc)	10V	5V @ 250µA	73 nC @ 10 V	1890 pF @ 25 V	±20V	-	160W (Tc)	21Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS i4-PAC™	ISOPLUSi5-PAK™
IXFH32N100X	IXYS	MOSFET N-CH 1000V 32A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	封装: -	库存3	MOSFET (Metal Oxide)	1000 V	32A (Tc)	10V	6V @ 4mA	130 nC @ 10 V	4075 pF @ 25 V	±30V	-	890W (Tc)	220mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
IXFP30N25X3	IXYS	MOSFET N-CHANNEL 250V 30A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	封装: -	库存297	MOSFET (Metal Oxide)	250 V	30A (Tc)	10V	4.5V @ 500µA	21 nC @ 10 V	1450 pF @ 25 V	±20V	-	176W (Tc)	60mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3