页 7 - IXYS 产品 - 晶体管 - FET，MOSFET - 单

IXTA32P05T-TRL

IXYS

MOSFET P-CH 50V 32A TO263

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50 V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
Vgs (Max): ±15V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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MOSFET (Metal Oxide)

50 V

32A (Tc)

10V

4.5V @ 250µA

46 nC @ 10 V

1975 pF @ 25 V

±15V

-

83W (Tc)

39mOhm @ 16A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTP20N65X2M

IXYS

MOSFET N-CH 650V 20A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Isolated Tab
Package / Case: TO-220-3 Full Pack, Isolated Tab

封装: -

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MOSFET (Metal Oxide)

650 V

20A (Tc)

10V

4.5V @ 250µA

27 nC @ 10 V

1450 pF @ 25 V

±30V

-

36W (Tc)

185mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220 Isolated Tab

TO-220-3 Full Pack, Isolated Tab

IXFH56N30X3

IXYS

MOSFET N-CH 300V 56A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

封装: -

库存4,026

MOSFET (Metal Oxide)

300 V

56A (Tc)

10V

4.5V @ 1.5mA

56 nC @ 10 V

3750 pF @ 25 V

±20V

-

320W (Tc)

27mOhm @ 28A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 (IXTH)

TO-247-3

IXTY03N90PHV

IXYS

MOSFET N-CH TO252AA

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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IXFQ80N25X3

IXYS

MOSFET N-CH 250V 80A TO3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3

封装: -

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MOSFET (Metal Oxide)

250 V

80A (Tc)

10V

4.5V @ 1.5mA

83 nC @ 10 V

5430 pF @ 25 V

±20V

-

390W (Tc)

16mOhm @ 40A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-3P

TO-3P-3, SC-65-3

IXTT1N250HV-TRL

IXYS

MOSFET N-CH 2500V 1.5A TO268HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 2500 V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268HV (IXTT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封装: -

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MOSFET (Metal Oxide)

2500 V

1.5A (Tc)

10V

4V @ 250µA

41 nC @ 10 V

1660 pF @ 25 V

±20V

-

250W (Tc)

40Ohm @ 750mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-268HV (IXTT)

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

IXFX400N15X3

IXYS

MOSFET N-CH 150V 400A PLUS247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1250W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 200A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
Package / Case: TO-247-3 Variant

封装: -

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MOSFET (Metal Oxide)

150 V

400A (Tc)

10V

4.5V @ 8mA

365 nC @ 10 V

23700 pF @ 25 V

±20V

-

1250W (Tc)

3mOhm @ 200A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS247™-3

TO-247-3 Variant

IXFT150N30X3HV

IXYS

MOSFET N-CH 300V 150A TO268HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268HV (IXFT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封装: -

库存2,265

MOSFET (Metal Oxide)

300 V

150A (Tc)

10V

4.5V @ 4mA

254 nC @ 10 V

13100 pF @ 25 V

±20V

-

890W (Tc)

8.3mOhm @ 75A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-268HV (IXFT)

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

IXFK90N65X3

IXYS

MOSFET 90A 650V X3 TO264K

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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IXFA14N60P-TRL

IXYS

MOSFET N-CH 600V 14A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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MOSFET (Metal Oxide)

600 V

14A (Tc)

10V

5.5V @ 2.5mA

36 nC @ 10 V

2500 pF @ 25 V

±30V

-

300W (Tc)

550mOhm @ 7A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTA36N30P-TRL

IXYS

MOSFET N-CH 300V 36A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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MOSFET (Metal Oxide)

300 V

36A (Tc)

10V

5.5V @ 250µA

70 nC @ 10 V

2250 pF @ 25 V

±30V

-

300W (Tc)

110mOhm @ 18A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTA3N100D2HV-TRL

IXYS

MOSFET N-CH 1000V 3A TO263HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263HV
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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MOSFET (Metal Oxide)

1000 V

3A (Tj)

0V

4.5V @ 250µA

37.5 nC @ 5 V

1020 pF @ 25 V

±20V

Depletion Mode

125W (Tc)

6Ohm @ 1.5A, 0V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263HV

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTA36N30P-PDP

IXYS

MOSFET N-CH TO263

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

IXTA05N100P

IXYS

MOSFET N-CH 1000V 750MA TO263

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

IXTA76N25T-TRL

IXYS

MOSFET N-CH 250V 76A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 38A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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MOSFET (Metal Oxide)

250 V

76A (Tc)

10V

5V @ 1mA

92 nC @ 10 V

4500 pF @ 25 V

±30V

-

460W (Tc)

39mOhm @ 38A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFH170N15X3

IXYS

MOSFET N-CH 150V 170A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7620 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 85A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3

封装: -

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MOSFET (Metal Oxide)

150 V

170A (Tc)

10V

4.5V @ 4mA

122 nC @ 10 V

7620 pF @ 25 V

±20V

-

520W (Tc)

6.7mOhm @ 85A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 (IXTH)

TO-247-3

IXTA80N075L2-TRL

IXYS

MOSFET N-CH 75V 80A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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MOSFET (Metal Oxide)

75 V

80A (Tc)

10V

4.5V @ 250µA

103 nC @ 10 V

3600 pF @ 25 V

±20V

-

357W (Tc)

24mOhm @ 40A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFK90N50P2

IXYS

MOSFET N-CH 90A TO264

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

MCB60I1200TZ-TUB

IXYS

SICFET N-CH 1.2KV 90A TO268AA

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
Vgs (Max): +20V, -5V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268AA (D3Pak-HV)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封装: -

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SiCFET (Silicon Carbide)

1200 V

90A (Tc)

20V

4V @ 15mA

160 nC @ 20 V

2790 pF @ 1000 V

+20V, -5V

-

34mOhm @ 50A, 20V

-40°C ~ 175°C (TJ)

Surface Mount

TO-268AA (D3Pak-HV)

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

IXTA3N100D2-TRL

IXYS

MOSFET N-CH 1000V 3A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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MOSFET (Metal Oxide)

1000 V

3A (Tj)

0V

4.5V @ 250µA

37.5 nC @ 5 V

1020 pF @ 25 V

±20V

Depletion Mode

125W (Tc)

6Ohm @ 1.5A, 0V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTY1R4N120P-TRL

IXYS

MOSFET N-CH 1200V 1.4A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 700mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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MOSFET (Metal Oxide)

1200 V

1.4A (Tc)

10V

4.5V @ 100µA

24.8 nC @ 10 V

666 pF @ 25 V

±30V

-

86W (Tc)

13Ohm @ 700mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252AA

TO-252-3, DPAK (2 Leads + Tab), SC-63

IXTA80N10T-TRL

IXYS

MOSFET N-CH 100V 80A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

Request a Quote

MOSFET (Metal Oxide)

100 V

80A (Tc)

10V

5V @ 100µA

60 nC @ 10 V

3040 pF @ 25 V

±20V

-

230W (Tc)

14mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTA86N20T-TRL

IXYS

MOSFET N-CH 200V 86A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 550W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 43A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

Request a Quote

MOSFET (Metal Oxide)

200 V

86A (Tc)

10V

5V @ 1mA

90 nC @ 10 V

4500 pF @ 25 V

±20V

-

550W (Tc)

33mOhm @ 43A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTA34N65X2

IXYS

MOSFET N-CH 650V 34A TO263AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

Request a Quote

MOSFET (Metal Oxide)

650 V

34A (Tc)

10V

5V @ 250µA

54 nC @ 10 V

3000 pF @ 25 V

±30V

-

540W (Tc)

96mOhm @ 17A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263AA

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFK40N50Q2

IXYS

MOSFET N-CH 40A TO264

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

IXTA220N04T2-TRL

IXYS

MOSFET N-CH 40V 220A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

Request a Quote

MOSFET (Metal Oxide)

40 V

220A (Tc)

10V

4V @ 250µA

112 nC @ 10 V

6820 pF @ 25 V

±20V

-

360W (Tc)

3.5mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXFP28N60X3

IXYS

DISCRETE MOSFET 28A 600V X3 TO22

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

IXTA64N10L2-TRL

IXYS

MOSFET N-CH 100V 64A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 32A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

Request a Quote

MOSFET (Metal Oxide)

100 V

64A (Tc)

10V

4.5V @ 250µA

100 nC @ 10 V

3620 pF @ 25 V

±20V

-

357W (Tc)

32mOhm @ 32A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-263 (D2PAK)

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IXTX240N075L2

IXYS

MOSFET N-CH 75V 240A PLUS247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75 V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 546 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
Package / Case: TO-247-3 Variant

封装: -

库存21

MOSFET (Metal Oxide)

75 V

240A (Tc)

10V

4.5V @ 3mA

546 nC @ 10 V

19000 pF @ 25 V

±20V

-

960W (Tc)

7mOhm @ 120A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PLUS247™-3

TO-247-3 Variant

IXFP38N30X3M

IXYS

MOSFET N-CH 300V 38A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Isolated Tab
Package / Case: TO-220-3 Full Pack, Isolated Tab

封装: -

库存7,095

MOSFET (Metal Oxide)

300 V

38A (Tc)

-

35 nC @ 10 V

2440 pF @ 25 V

±20V

-

34W (Tc)

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220 Isolated Tab

TO-220-3 Full Pack, Isolated Tab

零件编号	制造商	描述	封装	库存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXTA32P05T-TRL	IXYS	MOSFET P-CH 50V 32A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	MOSFET (Metal Oxide)	50 V	32A (Tc)	10V	4.5V @ 250µA	46 nC @ 10 V	1975 pF @ 25 V	±15V	-	83W (Tc)	39mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTP20N65X2M	IXYS	MOSFET N-CH 650V 20A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	封装: -	Request a Quote	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	4.5V @ 250µA	27 nC @ 10 V	1450 pF @ 25 V	±30V	-	36W (Tc)	185mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
IXFH56N30X3	IXYS	MOSFET N-CH 300V 56A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	封装: -	库存4,026	MOSFET (Metal Oxide)	300 V	56A (Tc)	10V	4.5V @ 1.5mA	56 nC @ 10 V	3750 pF @ 25 V	±20V	-	320W (Tc)	27mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTY03N90PHV	IXYS	MOSFET N-CH TO252AA FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFQ80N25X3	IXYS	MOSFET N-CH 250V 80A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	250 V	80A (Tc)	10V	4.5V @ 1.5mA	83 nC @ 10 V	5430 pF @ 25 V	±20V	-	390W (Tc)	16mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTT1N250HV-TRL	IXYS	MOSFET N-CH 2500V 1.5A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2500 V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXTT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封装: -	Request a Quote	MOSFET (Metal Oxide)	2500 V	1.5A (Tc)	10V	4V @ 250µA	41 nC @ 10 V	1660 pF @ 25 V	±20V	-	250W (Tc)	40Ohm @ 750mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268HV (IXTT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXFX400N15X3	IXYS	MOSFET N-CH 150V 400A PLUS247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 400A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 200A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3 Variant	封装: -	Request a Quote	MOSFET (Metal Oxide)	150 V	400A (Tc)	10V	4.5V @ 8mA	365 nC @ 10 V	23700 pF @ 25 V	±20V	-	1250W (Tc)	3mOhm @ 200A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3 Variant
IXFT150N30X3HV	IXYS	MOSFET N-CH 300V 150A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXFT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封装: -	库存2,265	MOSFET (Metal Oxide)	300 V	150A (Tc)	10V	4.5V @ 4mA	254 nC @ 10 V	13100 pF @ 25 V	±20V	-	890W (Tc)	8.3mOhm @ 75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268HV (IXFT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXFK90N65X3	IXYS	MOSFET 90A 650V X3 TO264K FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFA14N60P-TRL	IXYS	MOSFET N-CH 600V 14A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	14A (Tc)	10V	5.5V @ 2.5mA	36 nC @ 10 V	2500 pF @ 25 V	±30V	-	300W (Tc)	550mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA36N30P-TRL	IXYS	MOSFET N-CH 300V 36A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	MOSFET (Metal Oxide)	300 V	36A (Tc)	10V	5.5V @ 250µA	70 nC @ 10 V	2250 pF @ 25 V	±30V	-	300W (Tc)	110mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA3N100D2HV-TRL	IXYS	MOSFET N-CH 1000V 3A TO263HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 3A (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263HV Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	3A (Tj)	0V	4.5V @ 250µA	37.5 nC @ 5 V	1020 pF @ 25 V	±20V	Depletion Mode	125W (Tc)	6Ohm @ 1.5A, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263HV	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA36N30P-PDP	IXYS	MOSFET N-CH TO263 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA05N100P	IXYS	MOSFET N-CH 1000V 750MA TO263 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA76N25T-TRL	IXYS	MOSFET N-CH 250V 76A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	MOSFET (Metal Oxide)	250 V	76A (Tc)	10V	5V @ 1mA	92 nC @ 10 V	4500 pF @ 25 V	±30V	-	460W (Tc)	39mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFH170N15X3	IXYS	MOSFET N-CH 150V 170A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7620 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 85A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	150 V	170A (Tc)	10V	4.5V @ 4mA	122 nC @ 10 V	7620 pF @ 25 V	±20V	-	520W (Tc)	6.7mOhm @ 85A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTA80N075L2-TRL	IXYS	MOSFET N-CH 75V 80A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	MOSFET (Metal Oxide)	75 V	80A (Tc)	10V	4.5V @ 250µA	103 nC @ 10 V	3600 pF @ 25 V	±20V	-	357W (Tc)	24mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFK90N50P2	IXYS	MOSFET N-CH 90A TO264 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCB60I1200TZ-TUB	IXYS	SICFET N-CH 1.2KV 90A TO268AA FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V Vgs (Max): +20V, -5V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268AA (D3Pak-HV) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封装: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	90A (Tc)	20V	4V @ 15mA	160 nC @ 20 V	2790 pF @ 1000 V	+20V, -5V	-	-	34mOhm @ 50A, 20V	-40°C ~ 175°C (TJ)	Surface Mount	TO-268AA (D3Pak-HV)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXTA3N100D2-TRL	IXYS	MOSFET N-CH 1000V 3A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 3A (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	3A (Tj)	0V	4.5V @ 250µA	37.5 nC @ 5 V	1020 pF @ 25 V	±20V	Depletion Mode	125W (Tc)	6Ohm @ 1.5A, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTY1R4N120P-TRL	IXYS	MOSFET N-CH 1200V 1.4A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 13Ohm @ 700mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	1.4A (Tc)	10V	4.5V @ 100µA	24.8 nC @ 10 V	666 pF @ 25 V	±30V	-	86W (Tc)	13Ohm @ 700mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTA80N10T-TRL	IXYS	MOSFET N-CH 100V 80A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	MOSFET (Metal Oxide)	100 V	80A (Tc)	10V	5V @ 100µA	60 nC @ 10 V	3040 pF @ 25 V	±20V	-	230W (Tc)	14mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA86N20T-TRL	IXYS	MOSFET N-CH 200V 86A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	MOSFET (Metal Oxide)	200 V	86A (Tc)	10V	5V @ 1mA	90 nC @ 10 V	4500 pF @ 25 V	±20V	-	550W (Tc)	33mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA34N65X2	IXYS	MOSFET N-CH 650V 34A TO263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	MOSFET (Metal Oxide)	650 V	34A (Tc)	10V	5V @ 250µA	54 nC @ 10 V	3000 pF @ 25 V	±30V	-	540W (Tc)	96mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFK40N50Q2	IXYS	MOSFET N-CH 40A TO264 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA220N04T2-TRL	IXYS	MOSFET N-CH 40V 220A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	MOSFET (Metal Oxide)	40 V	220A (Tc)	10V	4V @ 250µA	112 nC @ 10 V	6820 pF @ 25 V	±20V	-	360W (Tc)	3.5mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFP28N60X3	IXYS	DISCRETE MOSFET 28A 600V X3 TO22 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA64N10L2-TRL	IXYS	MOSFET N-CH 100V 64A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote	MOSFET (Metal Oxide)	100 V	64A (Tc)	10V	4.5V @ 250µA	100 nC @ 10 V	3620 pF @ 25 V	±20V	-	357W (Tc)	32mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTX240N075L2	IXYS	MOSFET N-CH 75V 240A PLUS247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 546 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3 Variant	封装: -	库存21	MOSFET (Metal Oxide)	75 V	240A (Tc)	10V	4.5V @ 3mA	546 nC @ 10 V	19000 pF @ 25 V	±20V	-	960W (Tc)	7mOhm @ 120A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3 Variant
IXFP38N30X3M	IXYS	MOSFET N-CH 300V 38A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	封装: -	库存7,095	MOSFET (Metal Oxide)	300 V	38A (Tc)	-	-	35 nC @ 10 V	2440 pF @ 25 V	±20V	-	34W (Tc)	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab