IXYS 产品 - 晶体管 - FET,MOSFET - 阵列 | 深圳黑森尔电子
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IXYS 产品 - 晶体管 - FET,MOSFET - 阵列

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零件编号
制造商
描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
FMM22-05PF
IXYS

MOSFET 2N-CH 500V 13A I4-PAC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 13A
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V
  • Power - Max: 132W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5
  • Supplier Device Package: ISOPLUS i4-PAC?
封装: i4-Pac?-5
库存3,264
Standard
500V
13A
270 mOhm @ 11A, 10V
5V @ 1mA
50nC @ 10V
2630pF @ 25V
132W
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5
ISOPLUS i4-PAC?
FMM150-0075X2F
IXYS

MOSFET 2N-CH 75V 120A I4-PAC-5

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 120A
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
  • Power - Max: 170W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5
  • Supplier Device Package: ISOPLUS i4-PAC?
封装: i4-Pac?-5
库存3,328
Standard
75V
120A
5.8 mOhm @ 100A, 10V
4V @ 250µA
178nC @ 10V
10500pF @ 25V
170W
-55°C ~ 175°C (TJ)
Through Hole
i4-Pac?-5
ISOPLUS i4-PAC?
FMM110-015X2F
IXYS

MOSFET 2N-CH 150V 53A I4-PAC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 53A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 55A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
  • Power - Max: 180W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5
  • Supplier Device Package: ISOPLUS i4-PAC?
封装: i4-Pac?-5
库存3,392
Standard
150V
53A
20 mOhm @ 55A, 10V
4.5V @ 250µA
150nC @ 10V
8600pF @ 25V
180W
-55°C ~ 175°C (TJ)
Through Hole
i4-Pac?-5
ISOPLUS i4-PAC?
FMP36-015P
IXYS

MOSFET N/P-CH 150V 36A/22A I4PAC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 36A, 22A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 31A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
  • Power - Max: 125W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5
  • Supplier Device Package: ISOPLUS i4-PAC?
封装: i4-Pac?-5
库存4,208
Standard
150V
36A, 22A
40 mOhm @ 31A, 10V
5.5V @ 250µA
70nC @ 10V
2250pF @ 25V
125W
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5
ISOPLUS i4-PAC?
FMM60-02TF
IXYS

MOSFET 2N-CH 200V 33A I4-PAC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 33A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
  • Power - Max: 125W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5
  • Supplier Device Package: ISOPLUS i4-PAC?
封装: i4-Pac?-5
库存5,040
Standard
200V
33A
40 mOhm @ 30A, 10V
4.5V @ 250µA
90nC @ 10V
3700pF @ 25V
125W
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5
ISOPLUS i4-PAC?
FMM50-025TF
IXYS

MOSFET 2N-CH 250V 30A I4-PAC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 30A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
  • Power - Max: 125W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5
  • Supplier Device Package: ISOPLUS i4-PAC?
封装: i4-Pac?-5
库存4,960
Standard
250V
30A
50 mOhm @ 25A, 10V
4.5V @ 250µA
78nC @ 10V
4000pF @ 25V
125W
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5
ISOPLUS i4-PAC?
FMP76-010T
IXYS

MOSFET N/P-CH 100V 62A/54A I4PAC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 62A, 54A
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
  • Power - Max: 89W, 132W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5
  • Supplier Device Package: ISOPLUS i4-PAC?
封装: i4-Pac?-5
库存3,520
Standard
100V
62A, 54A
11 mOhm @ 25A, 10V
4.5V @ 250µA
104nC @ 10V
5080pF @ 25V
89W, 132W
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5
ISOPLUS i4-PAC?
hot IXTL2X180N10T
IXYS

MOSFET 2N-CH 100V 100A I5-PAK

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A
  • Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
  • Power - Max: 150W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUSi5-Pak?
  • Supplier Device Package: ISOPLUSi5-Pak?
封装: ISOPLUSi5-Pak?
库存6,160
Standard
100V
100A
7.4 mOhm @ 50A, 10V
4.5V @ 250µA
151nC @ 10V
6900pF @ 25V
150W
-55°C ~ 175°C (TJ)
Through Hole
ISOPLUSi5-Pak?
ISOPLUSi5-Pak?
FMP26-02P
IXYS

MOSFET N/P-CH 200V 26A/17A I4PAC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 26A, 17A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
  • Power - Max: 125W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5
  • Supplier Device Package: ISOPLUS i4-PAC?
封装: i4-Pac?-5
库存4,320
Standard
200V
26A, 17A
60 mOhm @ 25A, 10V
5V @ 250µA
70nC @ 10V
2720pF @ 25V
125W
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5
ISOPLUS i4-PAC?
MTI200WX75GD-SMD
IXYS

MOSFET 6N-CH 75V 255A ISOPLUS

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 255A (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 275µA
  • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 38V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: ISOPLUS-DIL™
  • Supplier Device Package: ISOPLUS-DIL™
封装: -
Request a Quote
-
75V
255A (Tc)
1.3mOhm @ 100A, 10V
3.8V @ 275µA
155nC @ 10V
14400pF @ 38V
-
-55°C ~ 175°C (TJ)
Surface Mount
ISOPLUS-DIL™
ISOPLUS-DIL™
IXFN27N120SK
IXYS

SIC 2N-CH 1200V SOT227B

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封装: -
Request a Quote
-
1200V (1.2kV)
-
-
-
-
-
-
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
FMP76-01T
IXYS

MOSFET N/P-CH 100V 54A I4-PAC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc), 62A (Tc)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA, 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V, 104nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V, 5080pF @ 25V
  • Power - Max: 89W, 132W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUSi5-PAK™
  • Supplier Device Package: ISOPLUS i4-PAC™
封装: -
Request a Quote
-
100V
54A (Tc), 62A (Tc)
24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V
4V @ 250µA, 4.5V @ 250µA
197nC @ 10V, 104nC @ 10V
1370pF @ 25V, 5080pF @ 25V
89W, 132W
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUSi5-PAK™
ISOPLUS i4-PAC™
MTI145WX100GD-SMD
IXYS

MOSFET 6N-CH 100V 190A ISOPLUS

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 275µA
  • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 50V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: ISOPLUS-DIL™
  • Supplier Device Package: ISOPLUS-DIL™
封装: -
Request a Quote
-
100V
190A (Tc)
2.2mOhm @ 100A, 10V
3.5V @ 275µA
155nC @ 10V
11100pF @ 50V
-
-55°C ~ 175°C (TJ)
Surface Mount
ISOPLUS-DIL™
ISOPLUS-DIL™
MCB20P1200LB-TRR
IXYS

SIC 2N-CH 1200V 9SMPD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerSMD
  • Supplier Device Package: 9-SMPD-B
封装: -
Request a Quote
-
1200V (1.2kV)
-
-
-
-
-
-
-
Surface Mount
9-PowerSMD
9-SMPD-B
MCB20P1200LB-TUB
IXYS

SIC 2N-CH 1200V 9SMPD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerSMD
  • Supplier Device Package: 9-SMPD-B
封装: -
Request a Quote
-
1200V (1.2kV)
-
-
-
-
-
-
-
Surface Mount
9-PowerSMD
9-SMPD-B
MCB60P1200TLB-TUB
IXYS

SIC 2N-CH 1200V 9SMPD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerSMD
  • Supplier Device Package: 9-SMPD-B
封装: -
Request a Quote
-
1200V (1.2kV)
-
-
-
-
-
-
-
Surface Mount
9-PowerSMD
9-SMPD-B
MCB60P1200TLB-TRR
IXYS

SIC 2N-CH 1200V 9SMPD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerSMD
  • Supplier Device Package: 9-SMPD-B
封装: -
Request a Quote
-
1200V (1.2kV)
-
-
-
-
-
-
-
Surface Mount
9-PowerSMD
9-SMPD-B
MKE38P600TLB
IXYS

MOSFET 600V 50A ISOPLUS-SMPD

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-SMD Module
  • Supplier Device Package: ISOPLUS-SMPD™.B
封装: -
Request a Quote
-
600V
50A (Tc)
-
-
-
-
-
-
Surface Mount
9-SMD Module
ISOPLUS-SMPD™.B
MTC120WX55GD-SMD
IXYS

MOSFET 6N-CH 55V 150A

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
55V
150A (Tc)
3.1mOhm @ 100A, 10V
4V @ 1mA
100nC @ 10V
6970pF @ 25V
-
-55°C ~ 175°C (TJ)
-
-
-
MCB30P1200LB-TUB
IXYS

SIC 2N-CH 1200V 9SMPD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerSMD
  • Supplier Device Package: 9-SMPD-B
封装: -
Request a Quote
-
1200V (1.2kV)
-
-
-
-
-
-
-
Surface Mount
9-PowerSMD
9-SMPD-B
MCB30P1200LB-TRR
IXYS

SIC 2N-CH 1200V 9SMPD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerSMD
  • Supplier Device Package: 9-SMPD-B
封装: -
Request a Quote
-
1200V (1.2kV)
-
-
-
-
-
-
-
Surface Mount
9-PowerSMD
9-SMPD-B
MTC120WX75GD-SMD
IXYS

MOSFET 6N-CH 75V 180A ISOPLUS

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: ISOPLUS-DIL™
  • Supplier Device Package: ISOPLUS-DIL™
封装: -
Request a Quote
-
75V
180A (Tc)
3.1mOhm @ 100A, 10V
4V @ 1mA
178nC @ 10V
10500pF @ 25V
-
-55°C ~ 175°C (TJ)
Surface Mount
ISOPLUS-DIL™
ISOPLUS-DIL™
MCB40P1200LB-TRR
IXYS

SIC 2N-CH 1200V 58A 9SMPD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 58A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerSMD
  • Supplier Device Package: 9-SMPD-B
封装: -
Request a Quote
-
1200V (1.2kV)
58A
-
-
-
-
-
-
Surface Mount
9-PowerSMD
9-SMPD-B
MCB40P1200LB-TUB
IXYS

SIC 2N-CH 1200V 58A SMPD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 58A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-SMD Power Module
  • Supplier Device Package: SMPD
封装: -
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1200V (1.2kV)
58A
-
-
-
-
-
-
Surface Mount
9-SMD Power Module
SMPD
MTI85W100GC-SMD
IXYS

MOSFET 6N-CH 100V 120A ISOPLUS

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Gull Wing
  • Supplier Device Package: ISOPLUS-DIL™
封装: -
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-
100V
120A (Tc)
4mOhm @ 80A, 10V
3.5V @ 150µA
88nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
17-SMD, Gull Wing
ISOPLUS-DIL™
MTC120W55GC-SMD
IXYS

MOSFET 6N-CH 55V 150A

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
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-
55V
150A (Tc)
3.1mOhm @ 100A, 10V
4V @ 1mA
100nC @ 10V
6970pF @ 25V
-
-55°C ~ 175°C (TJ)
-
-
-
MMPA60P1000TLA
IXYS

MOSFET 2N-CH 1000V Y3-LI

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Y3-Li
  • Supplier Device Package: Y3-Li
封装: -
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1000V (1kV)
-
-
-
-
-
-
-
Chassis Mount
Y3-Li
Y3-Li
IXFN130N90SK
IXYS

SIC 2N-CH 900V SOT227B

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封装: -
Request a Quote
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900V
-
-
-
-
-
-
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
MMIX2F60N50P3
IXYS

MOSFET 2N-CH 500V 30A 24SMPD

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V
  • Power - Max: 320W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SMD Module, 9 Leads
  • Supplier Device Package: 24-SMPD
封装: -
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-
500V
30A (Tc)
110mOhm @ 30A, 10V
5V @ 4mA
96nC @ 10V
6250pF @ 25V
320W
-55°C ~ 150°C (TJ)
Surface Mount
24-SMD Module, 9 Leads
24-SMPD
MKE38P600TLB-TRR
IXYS

MOSFET ISOPLUS-SMPD

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 9-SMD Module
  • Supplier Device Package: ISOPLUS-SMPD™.B
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
Surface Mount
9-SMD Module
ISOPLUS-SMPD™.B