页 5 - IXYS 产品 - 二极管 - 整流器 - 单 | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-87210559 ext.802
登入/注册
BOM
购物车 0

IXYS 产品 - 二极管 - 整流器 - 单

记录 504
页  5/17
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
E1780TG65E
IXYS

DIODE GEN PURP 3.6KV 1780A -

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3600 V
  • Current - Average Rectified (Io): 1780A
  • Voltage - Forward (Vf) (Max) @ If: 3.83 V @ 1780 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.22 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: TO-200AF
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 140°C
封装: -
Request a Quote
3600 V
1780A
3.83 V @ 1780 A
Standard Recovery >500ns, > 200mA (Io)
1.22 µs
100 mA @ 3600 V
-
Chassis Mount
TO-200AF
-
-40°C ~ 140°C
W1730JK280
IXYS

DIODE GEN PURP 2.8KV 1730A W113

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2800 V
  • Current - Average Rectified (Io): 1730A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 2800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W113
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
2800 V
1730A
1.2 V @ 1000 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 2800 V
-
Clamp On
DO-200AB, B-PUK
W113
-40°C ~ 160°C
W1730JK240
IXYS

DIODE GEN PURP 2.4KV 1730A W113

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2400 V
  • Current - Average Rectified (Io): 1730A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 2400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W113
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
2400 V
1730A
1.2 V @ 1000 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 2400 V
-
Clamp On
DO-200AB, B-PUK
W113
-40°C ~ 160°C
DSEI25-06AS-TRL
IXYS

DIODE GEN PURP 600V 25A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 25 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: 20pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
600 V
25A
1.31 V @ 25 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
100 µA @ 600 V
20pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-40°C ~ 150°C
DSEI25-06AS-TUB
IXYS

DIODE GEN PURP 600V 25A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 25 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: 20pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
600 V
25A
1.31 V @ 25 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
100 µA @ 600 V
20pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-40°C ~ 150°C
DLA20IM800PC-TRL
IXYS

DIODE GEN PURP 800V 20A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Capacitance @ Vr, F: 4pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
800 V
20A
1.2 V @ 20 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 800 V
4pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-55°C ~ 175°C
DSI30-12AS-TRL
IXYS

DIODE GEN PURP 1.2KV 30A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
  • Capacitance @ Vr, F: 10pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
库存22,089
1200 V
30A
1.29 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 1200 V
10pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-40°C ~ 175°C
DSEI19-06AS-TRL
IXYS

DIODE GEN PURP 600V 20A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
600 V
20A
1.7 V @ 16 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
50 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-40°C ~ 150°C
W3842MC240
IXYS

DIODE GEN PURP 2.4KV 3842A W54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2400 V
  • Current - Average Rectified (Io): 3842A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 34 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 2400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W54
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
2400 V
3842A
1.2 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
34 µs
50 mA @ 2400 V
-
Clamp On
DO-200AC, K-PUK
W54
-40°C ~ 160°C
W3842MC280
IXYS

DIODE GEN PURP 2.8KV 3842A W54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2800 V
  • Current - Average Rectified (Io): 3842A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 34 µs
  • Current - Reverse Leakage @ Vr: 50 mA @ 2800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W54
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
2800 V
3842A
1.2 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
34 µs
50 mA @ 2800 V
-
Clamp On
DO-200AC, K-PUK
W54
-40°C ~ 160°C
DSS10-01AS-TRL
IXYS

DIODE SCHOTTKY 100V 10A TO263AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
100 V
10A
840 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 100 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-55°C ~ 175°C
W1980JK180
IXYS

DIODE GEN PURP 1.8KV 1980A W113

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 1980A
  • Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 1000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W113
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
1800 V
1980A
1.12 V @ 1000 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 1800 V
-
Clamp On
DO-200AB, B-PUK
W113
-40°C ~ 175°C
M1565VF450
IXYS

DIODE GEN PURP 4.5KV 1565A W43

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 1565A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: W43
  • Operating Temperature - Junction: -40°C ~ 125°C
封装: -
Request a Quote
4500 V
1565A
1.8 V @ 2000 A
Standard Recovery >500ns, > 200mA (Io)
5 µs
100 mA @ 4500 V
-
Chassis Mount
DO-200AD
W43
-40°C ~ 125°C
DSEP29-06AS-TRL
IXYS

DIODE GEN PURP 600V 30A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 250 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
600 V
30A
1.61 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
250 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-55°C ~ 175°C
W6672TE320
IXYS

DIODE GEN PURP 1.75KV 6672A -

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1750 V
  • Current - Average Rectified (Io): 6672A
  • Voltage - Forward (Vf) (Max) @ If: 1.37 V @ 5000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 52 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 1750 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: TO-200AF
  • Supplier Device Package: TO-200AF
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
1750 V
6672A
1.37 V @ 5000 A
Standard Recovery >500ns, > 200mA (Io)
52 µs
100 mA @ 1750 V
-
Chassis Mount
TO-200AF
TO-200AF
-40°C ~ 160°C
W6672TE350
IXYS

DIODE GEN PURP 1.9KV 6672A -

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1900 V
  • Current - Average Rectified (Io): 6672A
  • Voltage - Forward (Vf) (Max) @ If: 1.37 V @ 5000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 52 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 1900 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: TO-200AF
  • Supplier Device Package: TO-200AF
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
1900 V
6672A
1.37 V @ 5000 A
Standard Recovery >500ns, > 200mA (Io)
52 µs
100 mA @ 1900 V
-
Chassis Mount
TO-200AF
TO-200AF
-40°C ~ 160°C
W1524LC300
IXYS

DIODE GEN PURP 3KV 1524A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3000 V
  • Current - Average Rectified (Io): 1524A
  • Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 3090 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 3000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -30°C ~ 160°C
封装: -
Request a Quote
3000 V
1524A
1.87 V @ 3090 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 3000 V
-
Clamp On
DO-200AB, B-PUK
W4
-30°C ~ 160°C
DSA15IM45UC-TUB
IXYS

DIODE SCHOTTKY 45V 15A TO252AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 45 V
  • Capacitance @ Vr, F: 227pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
45 V
15A
750 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
250 µA @ 45 V
227pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DSA15IM45UC-TRL
IXYS

DIODE SCHOTTKY 45V 15A TO252AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 45 V
  • Capacitance @ Vr, F: 227pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
45 V
15A
750 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
250 µA @ 45 V
227pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DMA10P1200UZ-TUB
IXYS

DIODE GEN PURP 1.2KV 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
  • Capacitance @ Vr, F: 1pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
1200 V
10A
1.55 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 1200 V
1pF @ 400V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DMA10P1200UZ-TRL
IXYS

DIODE GEN PURP 1.2KV 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
  • Capacitance @ Vr, F: 1pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存6,519
1200 V
10A
1.55 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 1200 V
1pF @ 400V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DSS16-0045A
IXYS

DIODE SCHOTTKY 45V 16A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -
封装: -
Request a Quote
45 V
16A
670 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 45 V
-
Through Hole
TO-220-2
TO-220AC
-
DSS6-015AS-TRL
IXYS

DIODE SCHOTTKY 150V 6A TO252AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 780 mV @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存7,161
150 V
6A
780 mV @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 150 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DSS6-015AS-TUB
IXYS

DIODE SCHOTTKY 150V 6A TO252AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 780 mV @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 150 V
  • Capacitance @ Vr, F: 82pF @ 24V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
150 V
6A
780 mV @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
-
250 µA @ 150 V
82pF @ 24V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DSEP40-03AS-TRL
IXYS

DIODE GEN PURP 300V 40A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 40 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 300 V
  • Capacitance @ Vr, F: 50pF @ 150V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存13,329
300 V
40A
1.44 V @ 40 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 300 V
50pF @ 150V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-55°C ~ 175°C
W3708MC350
IXYS

DIODE GEN PURP 3.5KV 3753A W54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3500 V
  • Current - Average Rectified (Io): 3753A
  • Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 37 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 3500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W54
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
3500 V
3753A
1.27 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
37 µs
100 mA @ 3500 V
-
Clamp On
DO-200AC, K-PUK
W54
-40°C ~ 160°C
W3708MC320
IXYS

DIODE GEN PURP 3.2KV 3753A W54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3200 V
  • Current - Average Rectified (Io): 3753A
  • Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 37 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 3200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W54
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
3200 V
3753A
1.27 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
37 µs
100 mA @ 3200 V
-
Clamp On
DO-200AC, K-PUK
W54
-40°C ~ 160°C
M2325HA450
IXYS

DIODE GEN PURP 4.5KV 2325A W121

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 2325A
  • Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5.4 µs
  • Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: W121
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
4500 V
2325A
2.6 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
5.4 µs
150 mA @ 4500 V
-
Chassis Mount
DO-200AD
W121
-40°C ~ 150°C
M2325HA400
IXYS

DIODE GEN PURP 4KV 2325A W121

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4000 V
  • Current - Average Rectified (Io): 2325A
  • Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5.4 µs
  • Current - Reverse Leakage @ Vr: 150 mA @ 4000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: W121
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
4000 V
2325A
2.6 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
5.4 µs
150 mA @ 4000 V
-
Chassis Mount
DO-200AD
W121
-40°C ~ 150°C
DSEP40-03AS-TUB
IXYS

DIODE GEN PURP 300V 40A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.46 V @ 40 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 300 V
  • Capacitance @ Vr, F: 50pF @ 150V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
300 V
40A
1.46 V @ 40 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 300 V
50pF @ 150V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-55°C ~ 175°C