页 4 - IXYS 产品 - 二极管 - 整流器 - 单 | 深圳黑森尔电子
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IXYS 产品 - 二极管 - 整流器 - 单

记录 504
页  4/17
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
DNA30ER2200IY
IXYS

DIODE GEN PURP 2.2KV 30A TO262

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
  • Capacitance @ Vr, F: 7pF @ 700V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-262-2, I2PAK
  • Supplier Device Package: TO-262 (I2PAK)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存156
2200 V
30A
1.26 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 2200 V
7pF @ 700V, 1MHz
Through Hole
TO-262-2, I2PAK
TO-262 (I2PAK)
-55°C ~ 175°C
M1583VF450
IXYS

DIODE GEN PURP 4.5KV 1583A W43

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 1583A
  • Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 2000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5 µs
  • Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: W43
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
4500 V
1583A
2.8 V @ 2000 A
Standard Recovery >500ns, > 200mA (Io)
5 µs
150 mA @ 4500 V
-
Chassis Mount
DO-200AD
W43
-40°C ~ 150°C
W6672TJ320
IXYS

DIODE GEN PURP 1.75KV 6672A -

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1750 V
  • Current - Average Rectified (Io): 6672A
  • Voltage - Forward (Vf) (Max) @ If: 1.37 V @ 5000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 52 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 1750 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: TO-200AF
  • Supplier Device Package: TO-200AF
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
1750 V
6672A
1.37 V @ 5000 A
Standard Recovery >500ns, > 200mA (Io)
52 µs
100 mA @ 1750 V
-
Chassis Mount
TO-200AF
TO-200AF
-40°C ~ 160°C
W6672TJ350
IXYS

DIODE GEN PURP 1.9KV 6672A -

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1900 V
  • Current - Average Rectified (Io): 6672A
  • Voltage - Forward (Vf) (Max) @ If: 1.37 V @ 5000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 52 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 1900 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: TO-200AF
  • Supplier Device Package: TO-200AF
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
1900 V
6672A
1.37 V @ 5000 A
Standard Recovery >500ns, > 200mA (Io)
52 µs
100 mA @ 1900 V
-
Chassis Mount
TO-200AF
TO-200AF
-40°C ~ 160°C
DSA15IM200UC-TUB
IXYS

DIODE SCHOTTKY 200V 15A TO252AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 940 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 200 V
  • Capacitance @ Vr, F: 67pF @ 24V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
200 V
15A
940 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
250 µA @ 200 V
67pF @ 24V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DSA15IM200UC-TRL
IXYS

DIODE SCHOTTKY 200V 15A TO252AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 940 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 200 V
  • Capacitance @ Vr, F: 67pF @ 24V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存1,230
200 V
15A
940 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
250 µA @ 200 V
67pF @ 24V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
W5715ED600
IXYS

DIODE GEN PURP 6KV 5750A W112

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6000 V
  • Current - Average Rectified (Io): 5750A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 73 µs
  • Current - Reverse Leakage @ Vr: 120 mA @ 6000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: W112
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
6000 V
5750A
1.4 V @ 4000 A
Standard Recovery >500ns, > 200mA (Io)
73 µs
120 mA @ 6000 V
-
Chassis Mount
DO-200AE
W112
-40°C ~ 150°C
DGS10-018AS-TUB
IXYS

DIODE SCHOTTKY 180V 15A TO263AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 180 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.3 mA @ 180 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
180 V
15A
1.1 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.3 mA @ 180 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-55°C ~ 175°C
DMA10P1600HR
IXYS

DIODE GEN PURP 1.6KV 10A ISO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
  • Capacitance @ Vr, F: 4pF @ 400V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: ISO247
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存90
1600 V
10A
1.23 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1600 V
4pF @ 400V, 1MHz
Through Hole
TO-247-3
ISO247
-55°C ~ 175°C
W2624NC240
IXYS

DIODE GEN PURP 2.4KV 2624A W5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2400 V
  • Current - Average Rectified (Io): 2624A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: W5
  • Operating Temperature - Junction: -
封装: -
Request a Quote
2400 V
2624A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Clamp On
DO-200AC, K-PUK
W5
-
W1748LC250
IXYS

DIODE GEN PURP 2.5KV 1748A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2500 V
  • Current - Average Rectified (Io): 1748A
  • Voltage - Forward (Vf) (Max) @ If: 1.93 V @ 3770 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 2500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
2500 V
1748A
1.93 V @ 3770 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 2500 V
-
Clamp On
DO-200AB, B-PUK
W4
-40°C ~ 175°C
W1748LC220
IXYS

DIODE GEN PURP 2.2KV 1748A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io): 1748A
  • Voltage - Forward (Vf) (Max) @ If: 1.93 V @ 3770 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 2200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
2200 V
1748A
1.93 V @ 3770 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 2200 V
-
Clamp On
DO-200AB, B-PUK
W4
-40°C ~ 175°C
W1748LC180
IXYS

DIODE GEN PURP 1.8KV 1748A W4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 1748A
  • Voltage - Forward (Vf) (Max) @ If: 1.93 V @ 3770 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W4
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
1800 V
1748A
1.93 V @ 3770 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 1800 V
-
Clamp On
DO-200AB, B-PUK
W4
-40°C ~ 175°C
DSEP12-12AZ-TRL
IXYS

DIODE GEN PURP 1.2KV 12A TO263HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 2.62 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Capacitance @ Vr, F: 5pF @ 600V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存2,400
1200 V
12A
2.62 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
40 ns
100 µA @ 1200 V
5pF @ 600V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
-55°C ~ 175°C
DSI30-08AS-TRL
IXYS

DIODE GEN PURP 800V 30A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 800 V
  • Capacitance @ Vr, F: 10pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
800 V
30A
1.29 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
40 µA @ 800 V
10pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-40°C ~ 175°C
DSA15IM150UC-TUB
IXYS

DIODE SCHOTTKY 150V 15A TO252AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 150 V
  • Capacitance @ Vr, F: 82pF @ 24V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
150 V
15A
890 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
250 µA @ 150 V
82pF @ 24V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DSA15IM150UC-TRL
IXYS

DIODE SCHOTTKY 150V 15A TO252

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 150 V
  • Capacitance @ Vr, F: 82pF @ 24V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
150 V
15A
890 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
250 µA @ 150 V
82pF @ 24V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DSEI8-06AS-TUB
IXYS

DIODE GEN PURP 600V 8A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
600 V
8A
1.5 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
20 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-40°C ~ 150°C
DSEI8-06AS-TRL
IXYS

DIODE GEN PURP 600V 8A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
600 V
8A
1.5 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
20 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-40°C ~ 150°C
W3090HA600
IXYS

DIODE GEN PURP 6KV 3110A W121

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6000 V
  • Current - Average Rectified (Io): 3110A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 41 µs
  • Current - Reverse Leakage @ Vr: 100 mA @ 6000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: W121
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
6000 V
3110A
1.7 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
41 µs
100 mA @ 6000 V
-
Chassis Mount
DO-200AD
W121
-40°C ~ 150°C
DSB15IM30UC-TUB
IXYS

DIODE SCHOTTKY 30V 15A TO252AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 510 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 mA @ 30 V
  • Capacitance @ Vr, F: 292pF @ 24V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
30 V
15A
510 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5 mA @ 30 V
292pF @ 24V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 150°C
DSB15IM30UC-TRL
IXYS

DIODE SCHOTTKY 30V 15A TO252AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 510 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 mA @ 30 V
  • Capacitance @ Vr, F: 292pF @ 24V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
30 V
15A
510 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5 mA @ 30 V
292pF @ 24V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 150°C
DMA10IM1200UZ-TRL
IXYS

DIODE GEN PURP 1.2KV 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
  • Capacitance @ Vr, F: 4pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
1200 V
10A
1.26 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1200 V
4pF @ 400V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DMA10IM1200UZ-TUB
IXYS

DIODE GEN PURP 1.2KV 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
  • Capacitance @ Vr, F: 4pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
1200 V
10A
1.26 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1200 V
4pF @ 400V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
W2340JK120
IXYS

DIODE GEN PURP 1.2KV 2340A W113

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 2340A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W113
  • Operating Temperature - Junction: -
封装: -
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1200 V
2340A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Clamp On
DO-200AB, B-PUK
W113
-
W2340JK150
IXYS

DIODE GEN PURP 1.5KV 2340A W113

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1500 V
  • Current - Average Rectified (Io): 2340A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: W113
  • Operating Temperature - Junction: -
封装: -
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1500 V
2340A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Clamp On
DO-200AB, B-PUK
W113
-
DSEP12-12AZ-TUB
IXYS

DIODE GEN PURP 1.2KV 12A TO263HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 2.62 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Capacitance @ Vr, F: 5pF @ 600V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存12
1200 V
12A
2.62 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
40 ns
100 µA @ 1200 V
5pF @ 600V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
-55°C ~ 175°C
DLA10IM800UC-TRL
IXYS

DIODE GEN PURP 800V 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
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800 V
10A
1.1 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 800 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DLA10IM800UC-TUB
IXYS

DIODE GEN PURP 800V 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.22 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 3pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
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800 V
10A
1.22 V @ 10 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 800 V
3pF @ 400V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
DLA40IM800PC-TRL
IXYS

DIODE GEN PURP 800V 40A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Capacitance @ Vr, F: 10pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存2,400
800 V
40A
1.3 V @ 40 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 800 V
10pF @ 400V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AA
-55°C ~ 175°C