Intersil 产品 - 晶体管 - FET,MOSFET - 阵列 | 深圳黑森尔电子
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Intersil 产品 - 晶体管 - FET,MOSFET - 阵列

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零件编号
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描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
GWS9294
Intersil

MOSFET 2N-CH 20V 10.1A 4QFN

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
  • Power - Max: 3.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-VDFN
  • Supplier Device Package: 4-QFN (2x2)
封装: 4-VDFN
库存7,552
Standard
20V
10.1A (Ta)
13 mOhm @ 6.5A, 4.5V
1.5V @ 1mA
11nC @ 4V
900pF @ 10V
3.6W
-55°C ~ 150°C (TJ)
Surface Mount
4-VDFN
4-QFN (2x2)
GWS9293
Intersil

MOSFET 2N-CH 20V 9.4A 4QFN

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
  • Power - Max: 3.6W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-VDFN
  • Supplier Device Package: 4-QFN (2x2)
封装: 4-VDFN
库存7,840
Standard
20V
9.4A (Ta)
17 mOhm @ 3A, 4.5V
1.5V @ 1mA
3.5nC @ 4V
400pF @ 10V
3.6W
-55°C ~ 150°C (TJ)
Surface Mount
4-VDFN
4-QFN (2x2)