页 47 - Infineon Technologies 产品 - 晶体管 - UGBT，MOSFET - 单

零件编号	制造商	描述	封装	库存	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG8CH42K10D	Infineon Technologies	IGBT 1200V 40A DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,128	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG8CH29K10F	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 160nC Td (on/off) @ 25°C: 40ns/245ns Test Condition: 600V, 25A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: Die	库存4,960	1200V	-	-	2V @ 15V, 25A	-	-	Standard	160nC	40ns/245ns	600V, 25A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IRG8CH29K10D	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,976	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG8CH20K10F	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: 20ns/170ns Test Condition: 600V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: Die	库存4,304	1200V	-	-	2V @ 15V, 15A	-	-	Standard	90nC	20ns/170ns	600V, 15A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IRG8CH20K10D	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,896	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG8CH15K10F	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25°C: 15ns/170ns Test Condition: 600V, 10A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: Die	库存7,024	1200V	-	-	2V @ 15V, 10A	-	-	Standard	65nC	15ns/170ns	600V, 10A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IRG8CH15K10D	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,864	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG8CH10K10F	Infineon Technologies	IGBT 1200V 5A DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 30nC Td (on/off) @ 25°C: 20ns/160ns Test Condition: 600V, 5A, 47 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: Die	库存2,512	1200V	-	-	2V @ 15V, 5A	-	-	Standard	30nC	20ns/160ns	600V, 5A, 47 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IRG8CH106K10F	Infineon Technologies	IGBT 1200V 110A DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 110A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 700nC Td (on/off) @ 25°C: 80ns/380ns Test Condition: 600V, 110A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: Die	库存6,112	1200V	-	-	2V @ 15V, 110A	-	-	Standard	700nC	80ns/380ns	600V, 110A, 1 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IRG7PK42UD1PBF	Infineon Technologies	IGBT 1200V DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,952	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG7PK42UD1MPBF	Infineon Technologies	IGBT 1200V DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,528	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG7PK42UD1-EPBF	Infineon Technologies	IGBT 1200V ULTRA FAST TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,696	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG7PK35UD1MPBF	Infineon Technologies	IGBT 1200V ULTRA FAST TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,384	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG7PH50U-EP	Infineon Technologies	IGBT 1200V ULTRA FAST TO247 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 140A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 556W Switching Energy: 4.6mJ (on), 3.2mJ (off) Input Type: Standard Gate Charge: 440nC Td (on/off) @ 25°C: 35ns/430ns Test Condition: 600V, 50A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247AD	封装: TO-247-3	库存3,392	1200V	140A	150A	2V @ 15V, 50A	556W	4.6mJ (on), 3.2mJ (off)	Standard	440nC	35ns/430ns	600V, 50A, 5 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247AD
IRG7PH42UD-EPBF	Infineon Technologies	IGBT 1200V ULTRA FAST TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,528	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG7PH35U-EPBF	Infineon Technologies	IGBT 1200V ULTRA FAST TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,728	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG7CH81K10EF-R	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 745nC Td (on/off) @ 25°C: 70ns/330ns Test Condition: 600V, 150A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: Die	库存2,976	1200V	-	-	2.3V @ 15V, 150A	-	-	Standard	745nC	70ns/330ns	600V, 150A, 1 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IRG7CH81K10EF	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,640	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG7CH75UEF-R	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 770nC Td (on/off) @ 25°C: 120ns/890ns Test Condition: 600V, 100A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: Die	库存3,376	1200V	-	-	2V @ 15V, 100A	-	-	Standard	770nC	120ns/890ns	600V, 100A, 5 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IRG7CH75UED-R	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,240	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG7CH75K10EF-R	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.53V @ 15V, 20A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 500nC Td (on/off) @ 25°C: 120ns/445ns Test Condition: 600V, 100A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: Die	库存6,064	1200V	-	-	1.53V @ 15V, 20A	-	-	Standard	500nC	120ns/445ns	600V, 100A, 5 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IRG7CH75K10EF	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,320	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG7CH73UEF-R	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 540nC Td (on/off) @ 25°C: 90ns/580ns Test Condition: 600V, 75A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: Die	库存3,872	1200V	-	-	2V @ 15V, 75A	-	-	Standard	540nC	90ns/580ns	600V, 75A, 5 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IRG7CH73UED-R	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,920	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG7CH73K10EF-R	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 20A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 420nC Td (on/off) @ 25°C: 105ns/45ns Test Condition: 600V, 75A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: Die	库存5,008	1200V	-	-	1.6V @ 15V, 20A	-	-	Standard	420nC	105ns/45ns	600V, 75A, 5 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IRG7CH73K10EF	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 20A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 360nC Td (on/off) @ 25°C: 63ns/267ns Test Condition: 600V, 75A, 4.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: Die	库存2,560	1200V	-	-	1.6V @ 15V, 20A	-	-	Standard	360nC	63ns/267ns	600V, 75A, 4.7 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IRG7CH50UEF	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,128	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG7CH50UED	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,848	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG7CH46UEF	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,104	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG7CH46UED	Infineon Technologies	IGBT 1200V ULTRA FAST DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,456	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-