页 65 - Infineon Technologies 产品 - 晶体管 - FET，MOSFET - 单

IPB65R310CFDATMA2

Infineon Technologies

MOSFET N-CH 650V 11.4A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 104.2W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存2,997

MOSFET (Metal Oxide)

650 V

11.4A (Tc)

10V

4.5V @ 400µA

41 nC @ 10 V

1100 pF @ 100 V

±20V

-

104.2W (Tc)

310mOhm @ 4.4A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IRFU2405PBFAKLA1

Infineon Technologies

MOSFET N-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

BSC040N10NS5SCATMA1

Infineon Technologies

MOSFET N-CH 100V 140A WSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-WSON-8-2
Package / Case: 8-PowerWDFN

封装: -

库存25,530

MOSFET (Metal Oxide)

100 V

140A (Tc)

6V, 10V

3.8V @ 95µA

72 nC @ 10 V

5300 pF @ 50 V

±20V

-

3W (Ta), 167W (Tc)

4mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-WSON-8-2

8-PowerWDFN

IPP65R310CFDXKSA1

Infineon Technologies

MOSFET N-CH 650V 11.4A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 104.2W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

封装: -

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MOSFET (Metal Oxide)

650 V

11.4A (Tc)

10V

4.5V @ 440µA

41 nC @ 10 V

1100 pF @ 100 V

±20V

-

104.2W (Tc)

310mOhm @ 4.4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IPP65R310CFDXKSA2

Infineon Technologies

MOSFET N-CH 650V 11.4A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 104.2W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

封装: -

库存1,368

MOSFET (Metal Oxide)

650 V

11.4A (Tc)

10V

4.5V @ 400µA

41 nC @ 10 V

1100 pF @ 100 V

±20V

-

104.2W (Tc)

310mOhm @ 4.4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IAUA210N10S5N024AUMA1

Infineon Technologies

MOSFET_(75V 120V( PG-HSOF-5

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 210A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8696 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 238W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-5-4
Package / Case: 5-PowerSFN

封装: -

库存11,460

MOSFET (Metal Oxide)

100 V

210A (Tj)

6V, 10V

3.8V @ 150µA

119 nC @ 10 V

8696 pF @ 50 V

±20V

-

238W (Tc)

2.4mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-5-4

5-PowerSFN

IRFHS8242TR2PBF

Infineon Technologies

MOSFET N-CH 25V 9.9A PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 6-PQFN (2x2)
Package / Case: 6-PowerVDFN

封装: -

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MOSFET (Metal Oxide)

25 V

9.9A (Ta), 21A (Tc)

-

2.35V @ 25µA

10.4 nC @ 10 V

653 pF @ 10 V

-

13mOhm @ 8.5A, 10V

-

Surface Mount

6-PQFN (2x2)

6-PowerVDFN

SPU08N05L

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

IRF100P219AKMA1

Infineon Technologies

MOSFET N-CH 100V TO247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

封装: -

库存1,008

MOSFET (Metal Oxide)

100 V

203A (Tc)

6V, 10V

3.8V @ 278µA

210 nC @ 10 V

12020 pF @ 50 V

±20V

-

3.8W (Ta), 341W (Tc)

1.7mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IRF7811AVTRPBF-1

Infineon Technologies

MOSFET N-CH 30V 10.8A 8SO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: -

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MOSFET (Metal Oxide)

30 V

10.8A (Ta)

4.5V

3V @ 250µA

26 nC @ 5 V

1801 pF @ 10 V

±20V

-

2.5W (Ta)

14mOhm @ 15A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

IPD60R520C6BTMA1

Infineon Technologies

MOSFET N-CH 600V 8.1A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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MOSFET (Metal Oxide)

600 V

8.1A (Tc)

10V

3.5V @ 230µA

23.4 nC @ 10 V

512 pF @ 100 V

±20V

-

66W (Tc)

520mOhm @ 2.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPAK (2 Leads + Tab), SC-63

IAUC120N06S5L022ATMA1

Infineon Technologies

MOSFET_)40V 60V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 65µA
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5651 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-34
Package / Case: 8-PowerTDFN

封装: -

库存14,874

MOSFET (Metal Oxide)

60 V

170A (Tj)

4.5V, 10V

2.2V @ 65µA

77 nC @ 10 V

5651 pF @ 30 V

±20V

-

136W (Tc)

2.2mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-34

8-PowerTDFN

IPP051N15N5XKSA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: -

库存882

MOSFET (Metal Oxide)

150 V

120A (Tc)

8V, 10V

4.6V @ 264µA

100 nC @ 10 V

7800 pF @ 75 V

±20V

-

300W (Tc)

5.1mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IRLH5034TR2PBF

Infineon Technologies

MOSFET N-CH 40V 100A 5X6 PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerVDFN

封装: -

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MOSFET (Metal Oxide)

40 V

29A (Ta), 100A (Tc)

-

2.5V @ 150µA

82 nC @ 10 V

4730 pF @ 25 V

-

2.4mOhm @ 50A, 10V

-

Surface Mount

8-PQFN (5x6)

8-PowerVDFN

AIMBG120R030M1XTMA1

Infineon Technologies

SIC_DISCRETE

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Vgs (Max): +23V, -5V
FET Feature: -
Power Dissipation (Max): 333W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-12
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

封装: -

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SiC (Silicon Carbide Junction Transistor)

1200 V

70A (Tc)

18V, 20V

5.1V @ 8.6mA

57 nC @ 20 V

1738 pF @ 800 V

+23V, -5V

-

333W (Tc)

38mOhm @ 27A, 20V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-12

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

IPB60R040CFD7ATMA1

Infineon Technologies

MOSFET N-CH 600V 50A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存12,753

MOSFET (Metal Oxide)

600 V

50A (Tc)

10V

4.5V @ 1.25mA

108 nC @ 10 V

4351 pF @ 400 V

±20V

-

227W (Tc)

40mOhm @ 24.9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

BSC105N15LS5ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 91µA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封装: -

库存10,500

MOSFET (Metal Oxide)

150 V

10.7A (Ta), 76A (Tc)

4.5V, 10V

2.3V @ 91µA

23 nC @ 4.5 V

3000 pF @ 75 V

±20V

-

2.5W (Ta), 125W (Tc)

10.5mOhm @ 40A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

IPC60R160C6UNSAWNX6SA1

Infineon Technologies

MOSFET N-CH BARE DIE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

IPW90R1K2C3FKSA1

Infineon Technologies

MOSFET N-CH 900V 5.1A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

封装: -

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MOSFET (Metal Oxide)

900 V

5.1A (Tc)

10V

3.5V @ 310µA

28 nC @ 10 V

710 pF @ 100 V

±20V

-

83W (Tc)

1.2Ohm @ 2.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-1

TO-247-3

ISC025N08NM5LF2ATMA1

Infineon Technologies

OPTIMOSTM5LINEARFET80V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 198A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.6V @ 115µA
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Rds On (Max) @ Id, Vgs: 2.55mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

封装: -

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MOSFET (Metal Oxide)

80 V

23A (Ta), 198A (Tc)

10V

3.6V @ 115µA

96 nC @ 10 V

6800 pF @ 40 V

±20V

-

3W (Ta), 217W (Tc)

2.55mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8 FL

8-PowerTDFN

IPZA60R060P7XKSA1

Infineon Technologies

MOSFET N-CH 600V 48A TO247-4

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 164W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4
Package / Case: TO-247-4

封装: -

Request a Quote

MOSFET (Metal Oxide)

600 V

48A (Tc)

10V

4V @ 800µA

67 nC @ 10 V

2895 pF @ 400 V

±20V

-

164W (Tc)

60mOhm @ 15.9A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-4

TO-247-4

BSZ097N04LSGATMA1

Infineon Technologies

MOSFET N-CH 40V 12A/40A 8TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8
Package / Case: 8-PowerTDFN

封装: -

库存24,936

MOSFET (Metal Oxide)

40 V

12A (Ta), 40A (Tc)

4.5V, 10V

2V @ 14µA

24 nC @ 10 V

1900 pF @ 20 V

±20V

-

2.1W (Ta), 35W (Tc)

9.7mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSDSON-8

8-PowerTDFN

SPP80N06S209

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 125µA
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3140 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: -

Request a Quote

MOSFET (Metal Oxide)

55 V

80A (Tc)

10V

4V @ 125µA

80 nC @ 10 V

3140 pF @ 25 V

±20V

-

190W (Tc)

9.1mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPA65R150CFDXKSA2

Infineon Technologies

MOSFET N-CH 650V 22.4A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 34.7W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

封装: -

库存1,497

MOSFET (Metal Oxide)

650 V

22.4A (Tc)

10V

4.5V @ 900µA

86 nC @ 10 V

2340 pF @ 100 V

±20V

-

34.7W (Tc)

150mOhm @ 9.3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

IPP055N08NF2SAKMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 99A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 55µA
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

封装: -

库存1,089

MOSFET (Metal Oxide)

80 V

18.5A (Ta), 99A (Tc)

6V, 10V

3.8V @ 55µA

54 nC @ 10 V

2500 pF @ 40 V

±20V

-

3.8W (Ta), 107W (Tc)

5.5mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IMBG65R009M1HXTMA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

IPL65R065CFD7AUMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 860µA
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 195W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16.4A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-4-1
Package / Case: 4-PowerTSFN

封装: -

Request a Quote

MOSFET (Metal Oxide)

650 V

33A (Tc)

10V

4.5V @ 860µA

68 nC @ 10 V

3288 pF @ 400 V

±20V

-

195W (Tc)

65mOhm @ 16.4A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-VSON-4-1

4-PowerTSFN

BSZ018NE2LSIATMA1

Infineon Technologies

MOSFET N-CH 25V 22A/40A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-FL
Package / Case: 8-PowerTDFN

封装: -

库存74,508

MOSFET (Metal Oxide)

25 V

22A (Ta), 40A (Tc)

4.5V, 10V

2V @ 250µA

36 nC @ 10 V

2500 pF @ 12 V

±20V

-

2.1W (Ta), 69W (Tc)

1.8mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSDSON-8-FL

8-PowerTDFN

SPW16N50C3FKSA1

Infineon Technologies

MOSFET N-CH 560V 16A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 560 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

封装: -

库存558

MOSFET (Metal Oxide)

560 V

16A (Tc)

10V

3.9V @ 675µA

66 nC @ 10 V

1600 pF @ 25 V

±20V

-

160W (Tc)

280mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-1

TO-247-3

IPTG007N06NM5ATMA1

Infineon Technologies

MOSFET N-CH 60V 53A/454A HSOG-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 280µA
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOG-8-1
Package / Case: 8-PowerSMD, Gull Wing

封装: -

库存10,728

MOSFET (Metal Oxide)

60 V

53A (Ta), 454A (Tc)

6V, 10V

3.3V @ 280µA

261 nC @ 10 V

21000 pF @ 30 V

±20V

-

3.8W (Ta), 375W (Tc)

0.75mOhm @ 150A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOG-8-1

8-PowerSMD, Gull Wing

零件编号	制造商	描述	封装	库存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPB65R310CFDATMA2	Infineon Technologies	MOSFET N-CH 650V 11.4A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104.2W (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	库存2,997	MOSFET (Metal Oxide)	650 V	11.4A (Tc)	10V	4.5V @ 400µA	41 nC @ 10 V	1100 pF @ 100 V	±20V	-	104.2W (Tc)	310mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFU2405PBFAKLA1	Infineon Technologies	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC040N10NS5SCATMA1	Infineon Technologies	MOSFET N-CH 100V 140A WSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 95µA Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-WSON-8-2 Package / Case: 8-PowerWDFN	封装: -	库存25,530	MOSFET (Metal Oxide)	100 V	140A (Tc)	6V, 10V	3.8V @ 95µA	72 nC @ 10 V	5300 pF @ 50 V	±20V	-	3W (Ta), 167W (Tc)	4mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-WSON-8-2	8-PowerWDFN
IPP65R310CFDXKSA1	Infineon Technologies	MOSFET N-CH 650V 11.4A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104.2W (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	650 V	11.4A (Tc)	10V	4.5V @ 440µA	41 nC @ 10 V	1100 pF @ 100 V	±20V	-	104.2W (Tc)	310mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IPP65R310CFDXKSA2	Infineon Technologies	MOSFET N-CH 650V 11.4A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104.2W (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	封装: -	库存1,368	MOSFET (Metal Oxide)	650 V	11.4A (Tc)	10V	4.5V @ 400µA	41 nC @ 10 V	1100 pF @ 100 V	±20V	-	104.2W (Tc)	310mOhm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IAUA210N10S5N024AUMA1	Infineon Technologies	MOSFET_(75V 120V( PG-HSOF-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 210A (Tj) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8696 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 238W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-5-4 Package / Case: 5-PowerSFN	封装: -	库存11,460	MOSFET (Metal Oxide)	100 V	210A (Tj)	6V, 10V	3.8V @ 150µA	119 nC @ 10 V	8696 pF @ 50 V	±20V	-	238W (Tc)	2.4mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-5-4	5-PowerSFN
IRFHS8242TR2PBF	Infineon Technologies	MOSFET N-CH 25V 9.9A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 6-PQFN (2x2) Package / Case: 6-PowerVDFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	25 V	9.9A (Ta), 21A (Tc)	-	2.35V @ 25µA	10.4 nC @ 10 V	653 pF @ 10 V	-	-	-	13mOhm @ 8.5A, 10V	-	Surface Mount	6-PQFN (2x2)	6-PowerVDFN
SPU08N05L	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF100P219AKMA1	Infineon Technologies	MOSFET N-CH 100V TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 203A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 278µA Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 341W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	封装: -	库存1,008	MOSFET (Metal Oxide)	100 V	203A (Tc)	6V, 10V	3.8V @ 278µA	210 nC @ 10 V	12020 pF @ 50 V	±20V	-	3.8W (Ta), 341W (Tc)	1.7mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IRF7811AVTRPBF-1	Infineon Technologies	MOSFET N-CH 30V 10.8A 8SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10.8A (Ta)	4.5V	3V @ 250µA	26 nC @ 5 V	1801 pF @ 10 V	±20V	-	2.5W (Ta)	14mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IPD60R520C6BTMA1	Infineon Technologies	MOSFET N-CH 600V 8.1A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	8.1A (Tc)	10V	3.5V @ 230µA	23.4 nC @ 10 V	512 pF @ 100 V	±20V	-	66W (Tc)	520mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IAUC120N06S5L022ATMA1	Infineon Technologies	MOSFET_)40V 60V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 65µA Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5651 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-34 Package / Case: 8-PowerTDFN	封装: -	库存14,874	MOSFET (Metal Oxide)	60 V	170A (Tj)	4.5V, 10V	2.2V @ 65µA	77 nC @ 10 V	5651 pF @ 30 V	±20V	-	136W (Tc)	2.2mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-34	8-PowerTDFN
IPP051N15N5XKSA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.6V @ 264µA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封装: -	库存882	MOSFET (Metal Oxide)	150 V	120A (Tc)	8V, 10V	4.6V @ 264µA	100 nC @ 10 V	7800 pF @ 75 V	±20V	-	300W (Tc)	5.1mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IRLH5034TR2PBF	Infineon Technologies	MOSFET N-CH 40V 100A 5X6 PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	40 V	29A (Ta), 100A (Tc)	-	2.5V @ 150µA	82 nC @ 10 V	4730 pF @ 25 V	-	-	-	2.4mOhm @ 50A, 10V	-	Surface Mount	8-PQFN (5x6)	8-PowerVDFN
AIMBG120R030M1XTMA1	Infineon Technologies	SIC_DISCRETE FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs(th) (Max) @ Id: 5.1V @ 8.6mA Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 333W (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-12 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	封装: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1200 V	70A (Tc)	18V, 20V	5.1V @ 8.6mA	57 nC @ 20 V	1738 pF @ 800 V	+23V, -5V	-	333W (Tc)	38mOhm @ 27A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPB60R040CFD7ATMA1	Infineon Technologies	MOSFET N-CH 600V 50A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.25mA Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	库存12,753	MOSFET (Metal Oxide)	600 V	50A (Tc)	10V	4.5V @ 1.25mA	108 nC @ 10 V	4351 pF @ 400 V	±20V	-	227W (Tc)	40mOhm @ 24.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSC105N15LS5ATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 91µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	封装: -	库存10,500	MOSFET (Metal Oxide)	150 V	10.7A (Ta), 76A (Tc)	4.5V, 10V	2.3V @ 91µA	23 nC @ 4.5 V	3000 pF @ 75 V	±20V	-	2.5W (Ta), 125W (Tc)	10.5mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPC60R160C6UNSAWNX6SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPW90R1K2C3FKSA1	Infineon Technologies	MOSFET N-CH 900V 5.1A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 310µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	900 V	5.1A (Tc)	10V	3.5V @ 310µA	28 nC @ 10 V	710 pF @ 100 V	±20V	-	83W (Tc)	1.2Ohm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
ISC025N08NM5LF2ATMA1	Infineon Technologies	OPTIMOSTM5LINEARFET80V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 198A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.6V @ 115µA Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 217W (Tc) Rds On (Max) @ Id, Vgs: 2.55mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	80 V	23A (Ta), 198A (Tc)	10V	3.6V @ 115µA	96 nC @ 10 V	6800 pF @ 40 V	±20V	-	3W (Ta), 217W (Tc)	2.55mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
IPZA60R060P7XKSA1	Infineon Technologies	MOSFET N-CH 600V 48A TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 164W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	封装: -	Request a Quote	MOSFET (Metal Oxide)	600 V	48A (Tc)	10V	4V @ 800µA	67 nC @ 10 V	2895 pF @ 400 V	±20V	-	164W (Tc)	60mOhm @ 15.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4	TO-247-4
BSZ097N04LSGATMA1	Infineon Technologies	MOSFET N-CH 40V 12A/40A 8TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	封装: -	库存24,936	MOSFET (Metal Oxide)	40 V	12A (Ta), 40A (Tc)	4.5V, 10V	2V @ 14µA	24 nC @ 10 V	1900 pF @ 20 V	±20V	-	2.1W (Ta), 35W (Tc)	9.7mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
SPP80N06S209	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 125µA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3140 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封装: -	Request a Quote	MOSFET (Metal Oxide)	55 V	80A (Tc)	10V	4V @ 125µA	80 nC @ 10 V	3140 pF @ 25 V	±20V	-	190W (Tc)	9.1mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPA65R150CFDXKSA2	Infineon Technologies	MOSFET N-CH 650V 22.4A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 900µA Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34.7W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	封装: -	库存1,497	MOSFET (Metal Oxide)	650 V	22.4A (Tc)	10V	4.5V @ 900µA	86 nC @ 10 V	2340 pF @ 100 V	±20V	-	34.7W (Tc)	150mOhm @ 9.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPP055N08NF2SAKMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 99A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 55µA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	封装: -	库存1,089	MOSFET (Metal Oxide)	80 V	18.5A (Ta), 99A (Tc)	6V, 10V	3.8V @ 55µA	54 nC @ 10 V	2500 pF @ 40 V	±20V	-	3.8W (Ta), 107W (Tc)	5.5mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IMBG65R009M1HXTMA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPL65R065CFD7AUMA1	Infineon Technologies	HIGH POWER_NEW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 860µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 195W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4-1 Package / Case: 4-PowerTSFN	封装: -	Request a Quote	MOSFET (Metal Oxide)	650 V	33A (Tc)	10V	4.5V @ 860µA	68 nC @ 10 V	3288 pF @ 400 V	±20V	-	195W (Tc)	65mOhm @ 16.4A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4-1	4-PowerTSFN
BSZ018NE2LSIATMA1	Infineon Technologies	MOSFET N-CH 25V 22A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	封装: -	库存74,508	MOSFET (Metal Oxide)	25 V	22A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	36 nC @ 10 V	2500 pF @ 12 V	±20V	-	2.1W (Ta), 69W (Tc)	1.8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
SPW16N50C3FKSA1	Infineon Technologies	MOSFET N-CH 560V 16A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 675µA Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	封装: -	库存558	MOSFET (Metal Oxide)	560 V	16A (Tc)	10V	3.9V @ 675µA	66 nC @ 10 V	1600 pF @ 25 V	±20V	-	160W (Tc)	280mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IPTG007N06NM5ATMA1	Infineon Technologies	MOSFET N-CH 60V 53A/454A HSOG-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOG-8-1 Package / Case: 8-PowerSMD, Gull Wing	封装: -	库存10,728	MOSFET (Metal Oxide)	60 V	53A (Ta), 454A (Tc)	6V, 10V	3.3V @ 280µA	261 nC @ 10 V	21000 pF @ 30 V	±20V	-	3.8W (Ta), 375W (Tc)	0.75mOhm @ 150A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOG-8-1	8-PowerSMD, Gull Wing