图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 600V 16A HDSOP-10
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封装: - |
库存60 |
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MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 4V @ 260µA | 23 nC @ 10 V | 902 pF @ 400 V | ±20V | - | 95W (Tc) | 150mOhm @ 5.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
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Infineon Technologies |
MOSFET P-CH 60V 6.5A TO252-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 6.5A (Tc) | 10V | 4V @ 270µA | 10.6 nC @ 10 V | 420 pF @ 30 V | ±20V | - | 28W (Tc) | 250mOhm @ 6.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRENCH >=100V
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封装: - |
库存1,422 |
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MOSFET (Metal Oxide) | 100 V | 33A (Ta), 205A (Tc) | 6V, 10V | 3.8V @ 270µA | 210 nC @ 10 V | 16000 pF @ 50 V | ±20V | - | 3.8W (Ta), 375W (Tc) | 1.83mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
TRENCH >=100V
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封装: - |
库存2,358 |
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MOSFET (Metal Oxide) | 100 V | 227A (Tc) | 6V, 10V | 3.8V @ 169µA | 154 nC @ 10 V | 7300 pF @ 50 V | ±20V | - | 250W (Tc) | 2.4mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-14 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Infineon Technologies |
SICFET N-CH 1200V 52A TO247-4
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封装: - |
库存753 |
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SiCFET (Silicon Carbide) | 1200 V | 52A (Tc) | 15V | 5.7V @ 10mA | 52 nC @ 15 V | 1900 pF @ 800 V | +20V, -10V | Current Sensing | 228W (Tc) | 59mOhm @ 20A, 15V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-1 | TO-247-4 |
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Infineon Technologies |
SILICON CARBIDE MOSFET
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 650V 25A TO220
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封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 25A (Tc) | 10V | 4.5V @ 390µA | 36 nC @ 10 V | 1503 pF @ 400 V | ±20V | - | 32W (Tc) | 125mOhm @ 7.8A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 55V 2A SOT223
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 55 V | 2A (Ta) | - | 2V @ 250µA | 14 nC @ 10 V | 230 pF @ 25 V | - | - | - | 140mOhm @ 2A, 10V | - | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
TRENCH >=100V DIRECTFET
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
TRENCH >=100V
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封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 15.3A (Ta), 136A (Tc) | 10V, 15V | 4.5V @ 258µA | 110 nC @ 10 V | 7400 pF @ 100 V | ±20V | - | 3.8W (Ta), 300W (Tc) | 6.3mOhm @ 100A, 15V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
OPTIMOS 5 POWER MOSFET
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封装: - |
库存3,090 |
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MOSFET (Metal Oxide) | 100 V | 37A (Ta), 365A (Tc) | 6V, 10V | 3.8V @ 280µA | 211 nC @ 10 V | 16000 pF @ 50 V | ±20V | - | 3.8W (Ta), 375W (Tc) | 1.4mOhm @ 150A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HDSOP-16-2 | 16-PowerSOP Module |
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Infineon Technologies |
TRENCH <= 40V
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封装: - |
库存2,400 |
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MOSFET (Metal Oxide) | 40 V | 40A (Ta), 232A (Tc) | 6V, 10V | 3.4V @ 126µA | 159 nC @ 10 V | 7500 pF @ 20 V | ±20V | - | 3.8W (Ta), 188W (Tc) | 1.35mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-U02 | TO-263-7, D2PAK (6 Leads + Tab) |
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Infineon Technologies |
MOSFET_(20V 40V)
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封装: - |
库存3,000 |
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MOSFET (Metal Oxide) | 40 V | 222A (Tj) | 4.5V, 10V | 1.8V @ 45µA | 64 nC @ 10 V | 4240 pF @ 20 V | ±16V | - | 105W (Tc) | 1.13mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH DIE
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 60V 120A D2PAK
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封装: - |
库存88,266 |
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MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 4V @ 118µA | 165 nC @ 10 V | 13000 pF @ 30 V | ±20V | - | 188W (Tc) | 2.9mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
HIGH POWER_NEW PG-HDSOP-22
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封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 12V | 4.5V @ 790µA | 83 nC @ 12 V | 3127 pF @ 300 V | ±20V | - | 272W (Tc) | 40mOhm @ 13A, 12V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-22-1 | 22-PowerBSOP Module |
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Infineon Technologies |
80A, 30V, N-CHANNEL, MOSFET
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封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 2V @ 110µA | 89.7 nC @ 10 V | 3320 pF @ 25 V | ±20V | - | 167W (Tc) | 4.9mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
TRENCH <= 40V
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封装: - |
库存19,545 |
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MOSFET (Metal Oxide) | 30 V | 42A (Ta), 433A (Tc) | 4.5V, 10V | 2V @ 250µA | 122 nC @ 10 V | 8900 pF @ 15 V | ±20V | - | 3W (Ta), 188W (Tc) | 0.55mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 14 nC @ 10 V | 1500 pF @ 15 V | ±20V | - | 38W (Tc) | 10.5mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3-11 | TO-251-3 Stub Leads, IPAK |
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Infineon Technologies |
MOSFET 600V TO220 FULL PACK
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封装: - |
库存1,404 |
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MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 4V @ 280µA | 25 nC @ 10 V | 1081 pF @ 400 V | ±20V | - | 26W (Tc) | - | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 40V 120A D2PAK
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封装: - |
库存5,124 |
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MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 2V @ 200µA | 346 nC @ 10 V | 28000 pF @ 25 V | ±20V | - | 250W (Tc) | 1.5mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO252-3
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封装: - |
库存156,984 |
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MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 2.2V @ 90µA | 140 nC @ 10 V | 9750 pF @ 25 V | ±16V | - | 136W (Tc) | 2.2mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET_(20V 40V)
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封装: - |
库存3,000 |
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MOSFET (Metal Oxide) | 40 V | 100A | 10V | - | - | - | - | - | - | - | -55°C ~ 100°C | Surface Mount | PG-TDSON-8-33 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 800V 6A TO220-3
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封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 3.9V @ 250µA | 41 nC @ 10 V | 785 pF @ 100 V | ±20V | - | 83W (Tc) | 900mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 50 V | 58A (Tc) | 10V | 3.5V @ 1mA | - | 4300 pF @ 25 V | ±20V | - | 170W | 18mOhm @ 47A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO218-3-1 | TO-218-3 |
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Infineon Technologies |
MOSFET N-CH 60V 56A TO220
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封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 56A (Tc) | 6V, 10V | 3.3V @ 36µA | 36 nC @ 10 V | 2600 pF @ 30 V | ±20V | - | 33W (Tc) | 6mOhm @ 56A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 120V 12A/99A TDSON
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封装: - |
库存1,605 |
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MOSFET (Metal Oxide) | 120 V | 12A (Ta), 99A (Tc) | 4.5V, 10V | 2.4V @ 112µA | 79 nC @ 10 V | 7400 pF @ 60 V | ±20V | - | 156W (Tc) | 8mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO247-3
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封装: - |
库存510 |
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MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 3.5V @ 630µA | 63 nC @ 10 V | 1400 pF @ 100 V | ±20V | - | 151W (Tc) | 190mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 40V 58A/475A HSOF-5
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封装: - |
库存4,029 |
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MOSFET (Metal Oxide) | 40 V | 58A (Ta), 475A (Tc) | 6V, 10V | 3.3V @ 250µA | 178 nC @ 10 V | 8800 pF @ 20 V | ±20V | - | 3.8W (Ta), 250W (Tc) | 0.6mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-5-1 | 5-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 40V 42A DPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 42A (Tc) | - | 4V @ 250µA | 45 nC @ 10 V | 1510 pF @ 25 V | - | - | 90W (Tc) | 9mOhm @ 42A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |