图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 13A/56A TSDSON
|
封装: - |
库存54,984 |
|
MOSFET (Metal Oxide) | 60 V | 13A (Ta), 56A (Tc) | 4.5V, 10V | 2.3V @ 15µA | 23 nC @ 10 V | 1400 pF @ 30 V | ±20V | - | 2.5W (Ta), 44W (Tc) | 7.3mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8-25 | 8-PowerTDFN |
||
Infineon Technologies |
TRENCH >=100V
|
封装: - |
库存15,000 |
|
MOSFET (Metal Oxide) | 100 V | 26A (Ta), 276A (Tc) | 6V, 10V | 3.8V @ 159µA | 134 nC @ 10 V | 9500 pF @ 50 V | ±20V | - | 3W (Ta), 333W (Tc) | 2.05mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSON-8-U04 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET 100V 57A DIE
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 57A | 10V | - | - | - | - | - | - | 23mOhm @ 57A, 10V | - | Surface Mount | Die | Die |
||
Infineon Technologies |
TRENCH >=100V PG-TSON-8
|
封装: - |
库存20,016 |
|
MOSFET (Metal Oxide) | 100 V | 25A (Ta), 230A (Tc) | 8V, 10V | 3.3V @ 147µA | 91 nC @ 10 V | 6880 pF @ 50 V | ±20V | - | 3W (Ta), 254W (Tc) | 2.24mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSON-8-3 | 8-PowerTDFN |
||
Infineon Technologies |
TRENCH 40<-<100V
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 4V @ 250µA | 220 nC @ 10 V | 9400 pF @ 50 V | ±20V | - | 370W (Tc) | 3.3mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-904 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 600V 38A TO263-3
|
封装: - |
库存3,150 |
|
MOSFET (Metal Oxide) | 600 V | 38A (Tc) | 10V | 4.5V @ 900µA | 79 nC @ 10 V | 3194 pF @ 400 V | ±20V | - | 178W (Tc) | 55mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 20V 6.7A 8-SOIC
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 6.7A (Ta) | - | 700mV @ 250µA (Min) | 50 nC @ 4.5 V | 1500 pF @ 15 V | - | - | - | 40mOhm @ 3.2A, 4.5V | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 560V 7.6A TO220-FP
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 560 V | 7.6A (Tc) | 10V | 3.9V @ 350µA | 32 nC @ 10 V | 750 pF @ 25 V | ±20V | - | 32W (Tc) | 600mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-31 | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET_(75V 120V(
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 4V @ 240µA | 176 nC @ 10 V | 11570 pF @ 25 V | ±20V | - | 300W (Tc) | 5.1mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 55 V | 35A (Tc) | 4.5V, 10V | 2V @ 130µA | 130 nC @ 10 V | 2660 pF @ 25 V | ±20V | - | 170W (Tc) | 13mOhm @ 19A, 10V | -40°C ~ 175°C (TJ) | Surface Mount | PG-TO263-5-2 | TO-263-5, D2PAK (4 Leads + Tab), TO-263BB |
||
Infineon Technologies |
MOSFET N-CH 40V 40A/100A TDSON
|
封装: - |
库存31,635 |
|
MOSFET (Metal Oxide) | 40 V | 40A (Ta), 100A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 67 nC @ 4.5 V | 4600 pF @ 20 V | ±20V | - | 3W (Ta), 150W (Tc) | 1mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N CH 100V 180A TO262
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 180A (Tc) | - | 4V @ 250µA | 215 nC @ 10 V | 9575 pF @ 50 V | - | - | 375W (Tc) | 4.7mOhm @ 106A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2PAK, TO-262AA |
||
Infineon Technologies |
TRENCH >=100V
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 25A (Tc) | 10V | 5V @ 100µA | 38 nC @ 10 V | 1710 pF @ 50 V | ±20V | - | 144W (Tc) | 72.5mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-904 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 20A PQFN
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 20A (Ta), 40A (Tc) | - | 2.35V @ 50µA | 27 nC @ 10 V | 1797 pF @ 25 V | - | - | - | 4.3mOhm @ 20A, 10V | - | Surface Mount | PQFN (3x3) | 8-VQFN Exposed Pad |
||
Infineon Technologies |
TRENCH <= 40V
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 162 nC @ 4.5 V | 10315 pF @ 25 V | ±20V | - | 375W (Tc) | 1.7mOhm @ 195A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
TRENCH >=100V PG-TDSON-8
|
封装: - |
库存13,302 |
|
MOSFET (Metal Oxide) | 100 V | 21A (Ta), 179A (Tc) | 8V, 10V | 3.3V @ 109µA | 69 nC @ 10 V | 5200 pF @ 50 V | ±20V | - | 3W (Ta), 208W (Tc) | 3mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 950V 2A TO251-3
|
封装: - |
库存1,581 |
|
MOSFET (Metal Oxide) | 950 V | 2A (Tc) | 10V | 3.5V @ 40µA | 6 nC @ 10 V | 196 pF @ 400 V | ±20V | - | 22W (Tc) | 3.7Ohm @ 800mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 600V 8A 8HSOF
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 8A (Tc) | 12V | 4.5V @ 490µA | 51 nC @ 12 V | 1932 pF @ 300 V | ±20V | - | 167W (Tc) | 65mOhm @ 8A, 12V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-2 | 8-PowerSFN |
||
Infineon Technologies |
MOSFET N-CH 30V 28A/100A TDSON
|
封装: - |
库存97,470 |
|
MOSFET (Metal Oxide) | 30 V | 28A (Ta), 100A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 44 nC @ 10 V | 2800 pF @ 15 V | ±20V | - | 2.5W (Ta), 69W (Tc) | 1.9mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 700V 6A TO252-3-313
|
封装: - |
库存5,481 |
|
MOSFET (Metal Oxide) | 700 V | 6A (Tc) | 10V | 4.5V @ 200µA | 22 nC @ 10 V | 615 pF @ 100 V | ±20V | - | 63W (Tc) | 660mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
TRENCH 40<-<100V
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 6V, 10V | 3.8V @ 208µA | 166 nC @ 10 V | 12100 pF @ 40 V | ±20V | - | 300W (Tc) | 2.3mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 40V 24A/40A TSDSON
|
封装: - |
库存269,583 |
|
MOSFET (Metal Oxide) | 40 V | 24A (Ta), 40A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 25 nC @ 10 V | 1800 pF @ 20 V | ±20V | - | 2.5W (Ta), 75W (Tc) | 2.4mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH TO220-3
|
封装: - |
Request a Quote |
|
- | - | 80A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET P-CH 60V 3.44A 8DSO
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 3.44A (Ta) | 10V | 4V @ 1mA | 30 nC @ 10 V | 875 pF @ 25 V | ±20V | - | 2.5W (Ta) | 130mOhm @ 3.44A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
TRENCH >=100V
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 11A (Ta), 87A (Tc) | 10V, 15V | 4.5V @ 129µA | 56 nC @ 10 V | 3800 pF @ 100 V | ±20V | - | 3.8W (Ta), 234W (Tc) | 12mOhm @ 65A, 15V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
||
Infineon Technologies |
MOSFET N-CH 30V 21A/40A TSDSON
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 21A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 24 nC @ 10 V | 1500 pF @ 15 V | ±20V | - | 2.5W (Ta), 48W (Tc) | 2.8mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
||
Infineon Technologies |
TRENCH >=100V
|
封装: - |
库存210 |
|
MOSFET (Metal Oxide) | 100 V | 205A (Tc) | 6V, 10V | 3.8V @ 270µA | 210 nC @ 10 V | 16000 pF @ 50 V | ±20V | - | 3.8W (Ta), 375W (Tc) | 1.83mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 500V 13A TO252-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 13V | 3.5V @ 350µA | 32.6 nC @ 10 V | 773 pF @ 100 V | ±20V | - | 92W (Tc) | 280mOhm @ 4.2A, 13V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
TRENCH 40<-<100V PG-TO220-3
|
封装: - |
库存660 |
|
MOSFET (Metal Oxide) | 60 V | 39A (Ta), 198A (Tc) | 6V, 10V | 3.3V @ 246µA | 305 nC @ 10 V | 13800 pF @ 30 V | ±20V | - | 3.8W (Ta), 300W (Tc) | 1.4mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-U05 | TO-220-3 |
||
Infineon Technologies |
TRENCH 40<-<100V
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 39A (Ta), 198A (Tc) | 6V, 10V | 3.3V @ 246µA | 305 nC @ 10 V | 13800 pF @ 30 V | ±20V | - | 3.8W (Ta), 300W (Tc) | 1.4mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-U05 | TO-220-3 |