图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 30A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,632 |
|
MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 2V @ 20µA | 11nC @ 5V | 1355pF @ 15V | ±20V | - | 52W (Tc) | 12.5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | P-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 25V 30A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,632 |
|
MOSFET (Metal Oxide) | 25V | 30A (Tc) | 4.5V, 10V | 2V @ 20µA | 11nC @ 5V | 1358pF @ 15V | ±20V | - | 52W (Tc) | 11.2 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 25V 30A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,872 |
|
MOSFET (Metal Oxide) | 25V | 30A (Tc) | 4.5V, 10V | 2V @ 20µA | 11nC @ 5V | 1358pF @ 15V | ±20V | - | 52W (Tc) | 11.2 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 50A D2PAK
|
封装: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
库存4,800 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2V @ 20µA | 13nC @ 5V | 1639pF @ 15V | ±20V | - | 58W (Tc) | 9.6 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
||
Infineon Technologies |
MOSFET N-CH 30V 50A D2PAK
|
封装: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
库存240,000 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2V @ 20µA | 13nC @ 5V | 1639pF @ 15V | ±20V | - | 58W (Tc) | 9.6 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
||
Infineon Technologies |
MOSFET N-CH 55V 100A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,536 |
|
MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 4V @ 230µA | 480nC @ 10V | 21620pF @ 25V | ±20V | - | 300W (Tc) | 3 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 25V 50A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,296 |
|
MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 2V @ 20µA | 13nC @ 5V | 1642pF @ 15V | ±20V | - | 63W (Tc) | 8.9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 50A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存240,000 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2V @ 40µA | 22nC @ 5V | 2782pF @ 15V | ±20V | - | 83W (Tc) | 6.3 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 50A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,616 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2V @ 40µA | 22nC @ 5V | 2782pF @ 15V | ±20V | - | 83W (Tc) | 6.3 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | P-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 25V 50A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,552 |
|
MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 2V @ 40µA | 22nC @ 5V | 2653pF @ 15V | ±20V | - | 83W (Tc) | 5.9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 60V 80A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存390,000 |
|
MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 2V @ 180µA | 157nC @ 10V | 5100pF @ 30V | ±20V | - | 250W (Tc) | 6.2 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 80A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,640 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2V @ 40µA | 25nC @ 5V | 3209pF @ 15V | ±20V | - | 94W (Tc) | 5 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 25V 80A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,384 |
|
MOSFET (Metal Oxide) | 25V | 80A (Tc) | 4.5V, 10V | 2V @ 50µA | 25nC @ 5V | 3110pF @ 15V | ±20V | - | 94W (Tc) | 4.6 mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 80A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,288 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2V @ 70µA | 40nC @ 5V | 5203pF @ 15V | ±20V | - | 107W (Tc) | 3.5 mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 80A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,504 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2V @ 70µA | 40nC @ 5V | 5203pF @ 15V | ±20V | - | 107W (Tc) | 3.5 mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 80A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,560 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2V @ 100µA | 59nC @ 5V | 7624pF @ 15V | ±20V | - | 150W (Tc) | 2.8 mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 25V 80A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存242,508 |
|
MOSFET (Metal Oxide) | 25V | 80A (Tc) | 4.5V, 10V | 2V @ 100µA | 57nC @ 5V | 7027pF @ 15V | ±20V | - | 150W (Tc) | 2.7 mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 200V 7A TO-220AB
|
封装: TO-220-3 |
库存6,348 |
|
MOSFET (Metal Oxide) | 200V | 7A (Tc) | 5V | 2V @ 1mA | - | 840pF @ 25V | ±20V | - | 40W (Tc) | 400 mOhm @ 3.5A, 5V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 200V 5.5A TO-220AB
|
封装: TO-220-3 |
库存130,956 |
|
MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 5V | 2V @ 1mA | - | 840pF @ 25V | ±20V | - | 40W (Tc) | 600 mOhm @ 3.5A, 5V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 200V 5.5A TO-220
|
封装: TO-220-3 |
库存3,456 |
|
MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 10V | 4V @ 1mA | - | 530pF @ 25V | ±20V | - | 40W (Tc) | 600 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 200V 5.5A TO-220AB
|
封装: TO-220-3 |
库存423,732 |
|
MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 10V | 4V @ 1mA | - | 530pF @ 25V | ±20V | - | 40W (Tc) | 600 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 200V 7A TO-220AB
|
封装: TO-220-3 |
库存7,888 |
|
MOSFET (Metal Oxide) | 200V | 7A (Tc) | 10V | 4V @ 1mA | - | 530pF @ 25V | ±20V | - | 40W (Tc) | 400 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 200V 9.5A TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,112 |
|
MOSFET (Metal Oxide) | 200V | 9.5A (Tc) | 10V | 4V @ 1mA | - | 530pF @ 25V | ±20V | - | 75W (Tc) | 400 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 200V 9.5A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,656 |
|
MOSFET (Metal Oxide) | 200V | 9.5A (Tc) | 10V | 4V @ 1mA | - | 530pF @ 25V | ±20V | - | 75W (Tc) | 400 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 200V 9.5A TO220AB
|
封装: TO-220-3 |
库存59,784 |
|
MOSFET (Metal Oxide) | 200V | 9.5A (Tc) | 10V | 4V @ 1mA | - | 530pF @ 25V | ±20V | - | 75W (Tc) | 400 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 200V 13.5A TO-220
|
封装: TO-220-3 |
库存168,000 |
|
MOSFET (Metal Oxide) | 200V | 13.5A (Tc) | 5V | 2V @ 1mA | - | 1600pF @ 25V | ±20V | - | 95W (Tc) | 200 mOhm @ 7A, 5V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 200V 13.5A TO220AB
|
封装: TO-220-3 |
库存3,536 |
|
MOSFET (Metal Oxide) | 200V | 13.5A (Tc) | 5V | 2V @ 1mA | - | 1600pF @ 25V | ±20V | - | 95W (Tc) | 200 mOhm @ 7A, 5V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 200V 14.5A TO262-3
|
封装: TO-220-3 |
库存4,320 |
|
MOSFET (Metal Oxide) | 200V | 14.5A (Tc) | 5V | 4V @ 1mA | - | 1120pF @ 25V | ±20V | - | 95W (Tc) | 200 mOhm @ 9A, 5V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 200V 14.5A TO263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存228,000 |
|
MOSFET (Metal Oxide) | 200V | 14.5A (Tc) | 10V | 4V @ 1mA | - | 1120pF @ 25V | ±20V | - | 95W (Tc) | 200 mOhm @ 9A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 200V 14.5A TO220AB
|
封装: TO-220-3 |
库存118,380 |
|
MOSFET (Metal Oxide) | 200V | 14.5A (Tc) | 5V | 4V @ 1mA | - | 1120pF @ 25V | ±20V | - | 95W (Tc) | 200 mOhm @ 9A, 5V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |