图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 250V 64A TO220-3
|
封装: - |
库存18,099 |
|
MOSFET (Metal Oxide) | 250 V | 64A (Tc) | 10V | 4V @ 270µA | 86 nC @ 10 V | 7100 pF @ 100 V | ±20V | - | 300W (Tc) | 20mOhm @ 64A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 500V 9.9A TO220-3
|
封装: - |
库存1,500 |
|
MOSFET (Metal Oxide) | 500 V | 9.9A (Tc) | 13V | 3.5V @ 260µA | 24.8 nC @ 10 V | 584 pF @ 100 V | ±20V | - | 73W (Tc) | 380mOhm @ 3.2A, 13V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
||
Infineon Technologies |
SICFET N-CH 1.2KV 26A TO247-4
|
封装: - |
库存1,776 |
|
SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | 15V, 18V | 5.7V @ 3.7mA | 21 nC @ 18 V | 707 pF @ 800 V | +23V, -7V | - | 115W (Tc) | 117mOhm @ 8.5A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-1 | TO-247-4 |
||
Infineon Technologies |
MOSFET P-CH 60V SOT223
|
封装: - |
库存186 |
|
MOSFET (Metal Oxide) | 60 V | 1.9A (Ta) | - | - | - | - | ±20V | - | - | - | - | Surface Mount | PG-SOT223 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET_(120V 300V)
|
封装: - |
库存2,991 |
|
MOSFET (Metal Oxide) | 120 V | - | - | - | - | - | - | - | - | - | -55°C ~ 175°C | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
||
Infineon Technologies |
OPTIMOS 6 POWER-TRANSISTOR
|
封装: - |
库存25,020 |
|
MOSFET (Metal Oxide) | 40 V | 60A (Ta), 637A (Tc) | 4.5V, 10V | 2.3V @ 1.449mA | 129 nC @ 10 V | 12000 pF @ 20 V | ±20V | - | 3W (Ta), 333W (Tc) | 0.45mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TTFN-9-U02 | 9-PowerTDFN |
||
Infineon Technologies |
TRENCH >=100V
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 120 V | 11A (Ta), 62A (Tc) | 8V, 10V | 3.6V @ 35µA | 19.3 nC @ 10 V | 1400 pF @ 60 V | ±20V | - | 3W (Ta), 94W (Tc) | 11mOhm @ 26A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | SuperSO8 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 80V 32A/247A 8HSOF
|
封装: - |
库存11,970 |
|
MOSFET (Metal Oxide) | 80 V | 32A (Ta), 247A (Tc) | 6V, 10V | 3.8V @ 159µA | 127 nC @ 10 V | 9200 pF @ 40 V | ±20V | - | 231W (Tc) | 1.9mOhm @ 150A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
||
Infineon Technologies |
MOSFET N-CH 550V 23A TO263-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 550 V | 23A (Tc) | 10V | 3.5V @ 930µA | 64 nC @ 10 V | 2540 pF @ 100 V | ±20V | - | 192W (Tc) | 140mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 30V 40A TDSON-8
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 6V, 10V | 1.9V @ 105µA | 43.2 nC @ 10 V | 3190 pF @ 15 V | ±25V | - | 69W (Ta) | 8.6mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Infineon Technologies |
SMALL SIGNAL MOSFETS PG-SOT223-4
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 930mA (Ta), 1.55A (Tc) | 4.5V, 10V | 2V @ 165µA | 7.2 nC @ 10 V | 350 pF @ 50 V | ±20V | - | 1.8W (Ta), 5W (Tc) | 980mOhm @ 900mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 650V 39A TO247-3
|
封装: - |
库存720 |
|
MOSFET (Metal Oxide) | 650 V | 39A (Tc) | 10V | 3.5V @ 1.7mA | 116 nC @ 10 V | 4000 pF @ 100 V | ±20V | - | 313W (Tc) | 75mOhm @ 26A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 17A/57A TDSON
|
封装: - |
库存81,864 |
|
MOSFET (Metal Oxide) | 30 V | 17A (Ta), 57A (Tc) | 4.5V, 10V | 2V @ 250µA | 12 nC @ 10 V | 770 pF @ 15 V | ±20V | - | 2.5W (Ta), 28W (Tc) | 5.2mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
||
Infineon Technologies |
SILICON CARBIDE MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 60V 7A 8-SOIC
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 7A (Ta) | - | 3V @ 250µA | 31 nC @ 4.5 V | 1740 pF @ 25 V | - | - | - | 26mOhm @ 4.2A, 10V | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
HIGH POWER_NEW
|
封装: - |
库存1,107 |
|
MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 4.5V @ 320µA | 28 nC @ 10 V | 1283 pF @ 400 V | ±20V | - | 77W (Tc) | 155mOhm @ 6.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
||
Infineon Technologies |
SILICON CARBIDE MOSFET PG-TO263-
|
封装: - |
库存2,775 |
|
SiCFET (Silicon Carbide) | 650 V | 63A (Tc) | 18V | 5.7V @ 8.8mA | 49 nC @ 18 V | 1643 pF @ 400 V | +23V, -5V | - | 234W (Tc) | 42mOhm @ 29.5A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
Infineon Technologies |
MOSFET N-CH 60V 72A TO220
|
封装: - |
库存825 |
|
MOSFET (Metal Oxide) | 60 V | 72A (Tc) | 6V, 10V | 3.3V @ 50µA | 50 nC @ 10 V | 3500 pF @ 30 V | ±20V | - | 36W (Tc) | 4mOhm @ 72A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 100V 9A/40A TSDSON
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 9A (Ta), 40A (Tc) | 4.5V, 10V | 2.3V @ 23µA | 15 nC @ 10 V | 1300 pF @ 50 V | ±20V | - | 2.1W (Ta), 52W (Tc) | 14.6mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
||
Infineon Technologies |
TRENCH 40<-<100V
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
OPTIMOS 6 POWER-TRANSISTOR,120V
|
封装: - |
库存25,701 |
|
MOSFET (Metal Oxide) | 120 V | 11A (Ta), 63A (Tc) | 3.3V, 10V | 2.2V @ 35µA | 26 nC @ 10 V | 1800 pF @ 60 V | ±20V | - | 3W (Ta), 94W (Tc) | 10.4mOhm @ 28A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 950V 8.7A TO220-3
|
封装: - |
库存1,314 |
|
MOSFET (Metal Oxide) | 950 V | 8.7A (Tc) | 10V | 3.5V @ 520µA | 61 nC @ 10 V | 1765 pF @ 400 V | ±20V | - | 31W (Tc) | 310mOhm @ 10.4A, 10V | -55°C ~ 150°C | Through Hole | PG-TO220-3-313 | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 250V 15A TO220
|
封装: - |
库存1,182 |
|
MOSFET (Metal Oxide) | 250 V | 15A (Tc) | 10V | 4V @ 89µA | 29 nC @ 10 V | 2300 pF @ 100 V | ±20V | - | 38W (Tc) | 60mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 60V 180A TO263-7
|
封装: - |
库存28,404 |
|
MOSFET (Metal Oxide) | 60 V | 180A (Tc) | 4.5V, 10V | 2.2V @ 196µA | 166 nC @ 4.5 V | 28000 pF @ 30 V | ±20V | - | 250W (Tc) | 1.6mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D2PAK (6 Leads + Tab) |
||
Infineon Technologies |
SILICON CARBIDE MOSFET, PG-TO247
|
封装: - |
库存96 |
|
SiCFET (Silicon Carbide) | 650 V | 26A (Tc) | 18V | 5.7V @ 3.3mA | 19 nC @ 18 V | 624 pF @ 400 V | +20V, -2V | - | 104W (Tc) | 111mOhm @ 11.2A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-3 | TO-247-4 |
||
Infineon Technologies |
MOSFET N-CH 950V 4A SOT223
|
封装: - |
库存71,499 |
|
MOSFET (Metal Oxide) | 950 V | 4A (Tc) | 10V | 3.5V @ 80µA | 10 nC @ 10 V | 330 pF @ 400 V | ±20V | - | 7W (Tc) | 2Ohm @ 1.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 900V 6.9A TO220-3
|
封装: - |
库存1,470 |
|
MOSFET (Metal Oxide) | 900 V | 6.9A (Tc) | 10V | 3.5V @ 460µA | 42 nC @ 10 V | 1100 pF @ 100 V | ±20V | - | 104W (Tc) | 800mOhm @ 4.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 900V 6.9A TO220-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 900 V | 6.9A (Tc) | 10V | 3.5V @ 460µA | 42 nC @ 10 V | 1100 pF @ 100 V | ±20V | - | 104W (Tc) | 800mOhm @ 4.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 80V 180A TO263-7
|
封装: - |
库存22,866 |
|
MOSFET (Metal Oxide) | 80 V | 180A (Tc) | 6V, 10V | 3.5V @ 270µA | 206 nC @ 10 V | 14200 pF @ 40 V | ±20V | - | 300W (Tc) | 1.9mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D2PAK (6 Leads + Tab) |
||
Infineon Technologies |
MOSFET N-CH 40V 195A TO262
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 195A (Tc) | - | 3.9V @ 250µA | 324 nC @ 10 V | 10820 pF @ 25 V | - | - | 294W (Tc) | 1.6mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2PAK, TO-262AA |