图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
DIODE GEN PURP 1.2KV 100A WAFER
|
封装: Die |
库存3,424 |
|
1200V | 100A (DC) | 2.1V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 100A WAFER
|
封装: Die |
库存5,296 |
|
1200V | 100A (DC) | 1.9V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.7KV 150A WAFER
|
封装: Die |
库存3,536 |
|
1700V | 150A (DC) | 1.8V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.7KV 100A WAFER
|
封装: Die |
库存6,528 |
|
1700V | 100A (DC) | 2.15V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 1.7KV 100A WAFER
|
封装: Die |
库存4,448 |
|
1700V | 100A (DC) | 1.8V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 150A WAFER
|
封装: Die |
库存6,832 |
|
600V | 150A (DC) | 1.25V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.7KV 75A WAFER
|
封装: Die |
库存3,872 |
|
1700V | 75A (DC) | 2.15V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 75A WAFER
|
封装: Die |
库存7,472 |
|
1200V | 75A (DC) | 2.1V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 75A WAFER
|
封装: Die |
库存3,456 |
|
1200V | 75A (DC) | 1.9V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 100A WAFER
|
封装: Die |
库存4,432 |
|
1200V | 100A (DC) | 1.6V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 200A WAFER
|
封装: Die |
库存2,896 |
|
600V | 200A (DC) | 1.9V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 1.7KV 75A WAFER
|
封装: Die |
库存3,984 |
|
1700V | 75A (DC) | 1.8V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 100A WAFER
|
封装: Die |
库存6,512 |
|
600V | 100A (DC) | 1.25V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.7KV 50A WAFER
|
封装: Die |
库存6,992 |
|
1700V | 50A (DC) | 2.15V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 75A WAFER
|
封装: Die |
库存7,184 |
|
1200V | 75A (DC) | 1.6V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 50A WAFER
|
封装: Die |
库存6,960 |
|
1200V | 50A (DC) | 2.1V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 50A WAFER
|
封装: Die |
库存2,416 |
|
1200V | 50A (DC) | 1.9V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 150A WAFER
|
封装: Die |
库存4,672 |
|
600V | 150A (DC) | 1.9V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 1.7KV 50A WAFER
|
封装: Die |
库存5,760 |
|
1700V | 50A (DC) | 1.8V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 75A WAFER
|
封装: Die |
库存6,624 |
|
600V | 75A (DC) | 1.25V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 50A WAFER
|
封装: Die |
库存4,448 |
|
1200V | 50A (DC) | 1.6V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 35A WAFER
|
封装: Die |
库存7,232 |
|
1200V | 35A (DC) | 2.1V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 35A WAFER
|
封装: Die |
库存4,832 |
|
1200V | 35A (DC) | 1.9V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 100A WAFER
|
封装: Die |
库存6,288 |
|
600V | 100A (DC) | 1.9V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
||
Infineon Technologies |
DIODE SILICON 300V 10A WAFER
|
封装: Die |
库存6,688 |
|
300V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 300V | 600pF @ 1V, 1MHz | Surface Mount | Die | Sawn on foil | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 50A WAFER
|
封装: Die |
库存7,136 |
|
600V | 50A (DC) | 1.25V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 50A WAFER
|
封装: Die |
库存5,456 |
|
600V | 50A (DC) | 1.25V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 35A WAFER
|
封装: Die |
库存5,088 |
|
1200V | 35A (DC) | 1.6V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 25A WAFER
|
封装: Die |
库存2,416 |
|
1200V | 25A (DC) | 2.1V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 25A WAFER
|
封装: Die |
库存4,960 |
|
1200V | 25A (DC) | 1.9V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |