页 19 - Infineon Technologies 产品 - 二极管 - 整流器 - 单

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BAS 52-02V E6327	Infineon Technologies	DIODE SCHOTTKY 45V 750MA SC79-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 750mA (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 45V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: 150°C (Max)	封装: SC-79, SOD-523	库存173,892	45V	750mA (DC)	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 45V	10pF @ 10V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	150°C (Max)
BAS5202VE6127XT	Infineon Technologies	DIODE SCHOTTKY 45V 750MA SC79-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 750mA (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 45V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: 150°C (Max)	封装: SC-79, SOD-523	库存5,072	45V	750mA (DC)	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 45V	10pF @ 10V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	150°C (Max)
BAS16WE6433HTMA1	Infineon Technologies	DIODE GEN PURP 80V 250MA SOT323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Operating Temperature - Junction: 150°C (Max)	封装: SC-70, SOT-323	库存7,040	80V	250mA (DC)	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	PG-SOT323-3	150°C (Max)
BAS 16-02W E6327	Infineon Technologies	DIODE GEN PURP 80V 200MA SCD80-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-80 Supplier Device Package: PG-SCD80-2 Operating Temperature - Junction: 150°C (Max)	封装: SC-80	库存3,680	80V	200mA (DC)	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-80	PG-SCD80-2	150°C (Max)
BAS 16-02V E6327	Infineon Technologies	DIODE GEN PURP 80V 200MA SC79-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: 150°C (Max)	封装: SC-79, SOD-523	库存4,864	80V	200mA (DC)	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	150°C (Max)
SDT12S60	Infineon Technologies	DIODE SCHOTTKY 600V 12A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 400µA @ 600V Capacitance @ Vr, F: 450pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存32,232	600V	12A (DC)	1.7V @ 12A	No Recovery Time > 500mA (Io)	0ns	400µA @ 600V	450pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
SDT10S30	Infineon Technologies	DIODE SCHOTTKY 300V 10A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 300V Capacitance @ Vr, F: 600pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存9,876	300V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	200µA @ 300V	600pF @ 0V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
SDT06S60	Infineon Technologies	DIODE SCHOTTKY 600V 6A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 300pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存30,096	600V	6A (DC)	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	300pF @ 0V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
SDT04S60	Infineon Technologies	DIODE SCHOTTKY 600V 4A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 150pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存52,524	600V	4A (DC)	1.9V @ 4A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	150pF @ 0V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
SDP06S60	Infineon Technologies	DIODE SCHOTTKY 600V 6A TO220AB Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 300pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: P-TO220AB Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-3	库存15,756	600V	6A (DC)	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	300pF @ 0V, 1MHz	Through Hole	TO-220-3	P-TO220AB	-55°C ~ 175°C
BAW78DE6327HTSA1	Infineon Technologies	DIODE GEN PURP 400V 1A SOT89 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1µs Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 10pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PG-SOT89 Operating Temperature - Junction: 150°C (Max)	封装: TO-243AA	库存2,656	400V	1A (DC)	1.6V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1µs	1µA @ 400V	10pF @ 0V, 1MHz	Surface Mount	TO-243AA	PG-SOT89	150°C (Max)
IDC20S120C5X1SA1	Infineon Technologies	IC DIODE EMITTER CTLR WAFER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存3,008	-	-	-	-	-	-	-	-	-	-	-
IDW40G65C5FKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 40A TO247-3 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 40A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 40A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 1.4mA @ 650V Capacitance @ Vr, F: 1140pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-247-3	库存7,360	650V	40A (DC)	1.7V @ 40A	No Recovery Time > 500mA (Io)	0ns	1.4mA @ 650V	1140pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
IDC08S120EX1SA3	Infineon Technologies	DIODE SCHOTTKY 1200V 7.5A DIE Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 7.5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 7.5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 180µA @ 1200V Capacitance @ Vr, F: 380pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 175°C	封装: Die	库存7,488	1200V	7.5A (DC)	1.8V @ 7.5A	No Recovery Time > 500mA (Io)	0ns	180µA @ 1200V	380pF @ 1V, 1MHz	Surface Mount	Die	Sawn on foil	-55°C ~ 175°C
IDW40G65C5BXKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 40A TO247-3 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 210µA @ 650V Capacitance @ Vr, F: 590pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-247-3	库存3,488	650V	20A (DC)	1.7V @ 20A	No Recovery Time > 500mA (Io)	0ns	210µA @ 650V	590pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
IDC15S120C5X1SA1	Infineon Technologies	IC DIODE EMITTER CTLR WAFER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存5,440	-	-	-	-	-	-	-	-	-	-	-
IDW32G65C5BXKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 32A TO247-3 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 16A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 16A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 650V Capacitance @ Vr, F: 470pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-247-3	库存2,032	650V	16A (DC)	1.7V @ 16A	No Recovery Time > 500mA (Io)	0ns	200µA @ 650V	470pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
IDC10S120C5X1SA1	Infineon Technologies	IC DIODE EMITTER CTLR WAFER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存3,152	-	-	-	-	-	-	-	-	-	-	-
IDW24G65C5BXKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 24A TO247-3 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 190µA @ 650V Capacitance @ Vr, F: 360pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-247-3	库存7,824	650V	12A (DC)	1.7V @ 12A	No Recovery Time > 500mA (Io)	0ns	190µA @ 650V	360pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
IDW16G65C5FKSA1	Infineon Technologies	DIODE SCHOTTKY 650V 16A TO247-3 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 16A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 16A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 600µA @ 650V Capacitance @ Vr, F: 470pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-247-3	库存7,568	650V	16A (DC)	1.7V @ 16A	No Recovery Time > 500mA (Io)	0ns	600µA @ 650V	470pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
IDW20G65C5BXKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 20A TO247-3 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 180µA @ 650V Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-247-3	库存3,984	650V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	180µA @ 650V	300pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
IDH20G65C6XKSA1	Infineon Technologies	SIC DIODES Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存2,848	-	-	-	-	-	-	-	-	-	-	-
IDC05S120C5X1SA1	Infineon Technologies	IC DIODE EMITTER CTLR WAFER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存6,816	-	-	-	-	-	-	-	-	-	-	-
IDH16G65C6XKSA1	Infineon Technologies	SIC DIODES Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存7,920	-	-	-	-	-	-	-	-	-	-	-
IDH12G65C6XKSA1	Infineon Technologies	SIC DIODES Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存4,480	-	-	-	-	-	-	-	-	-	-	-
IDD12SG60CXTMA2	Infineon Technologies	SIC DIODES Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存2,304	-	-	-	-	-	-	-	-	-	-	-
IDD12SG60CXTMA1	Infineon Technologies	DIODE SCHOTTKY 600V 12A TO252-3 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: 310pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存3,504	600V	12A (DC)	2.1V @ 12A	No Recovery Time > 500mA (Io)	0ns	100µA @ 600V	310pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDH10G65C6XKSA1	Infineon Technologies	SIC DIODES Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存2,944	-	-	-	-	-	-	-	-	-	-	-
IDK09G65C5XTMA2	Infineon Technologies	DIODE SCHOTTKY 650V 9A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 9A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 9A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 1.6mA @ 650V Capacitance @ Vr, F: 270pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存5,984	650V	9A (DC)	1.8V @ 9A	No Recovery Time > 500mA (Io)	0ns	1.6mA @ 650V	270pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDH08G65C6XKSA1	Infineon Technologies	SIC DIODES Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存3,920	-	-	-	-	-	-	-	-	-	-	-

BAS 52-02V E6327

Infineon Technologies

DIODE SCHOTTKY 45V 750MA SC79-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 750mA (DC)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 45V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)

封装: SC-79, SOD-523

库存173,892

45V

750mA (DC)

600mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 45V

10pF @ 10V, 1MHz

Surface Mount

SC-79, SOD-523

PG-SC79-2

150°C (Max)

BAS5202VE6127XT

Infineon Technologies

DIODE SCHOTTKY 45V 750MA SC79-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 750mA (DC)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 45V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)

封装: SC-79, SOD-523

库存5,072

45V

750mA (DC)

600mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 45V

10pF @ 10V, 1MHz

Surface Mount

SC-79, SOD-523

PG-SC79-2

150°C (Max)

BAS16WE6433HTMA1

Infineon Technologies

DIODE GEN PURP 80V 250MA SOT323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C (Max)

封装: SC-70, SOT-323

库存7,040

80V

250mA (DC)

1.25V @ 150mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

1µA @ 75V

2pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

PG-SOT323-3

150°C (Max)

BAS 16-02W E6327

Infineon Technologies

DIODE GEN PURP 80V 200MA SCD80-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-80
Supplier Device Package: PG-SCD80-2
Operating Temperature - Junction: 150°C (Max)

封装: SC-80

库存3,680

80V

200mA (DC)

1.25V @ 150mA

Small Signal =< 200mA (Io), Any Speed

4ns

1µA @ 75V

2pF @ 0V, 1MHz

Surface Mount

SC-80

PG-SCD80-2

150°C (Max)

BAS 16-02V E6327

Infineon Technologies

DIODE GEN PURP 80V 200MA SC79-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)

封装: SC-79, SOD-523

库存4,864

80V

200mA (DC)

1.25V @ 150mA

Small Signal =< 200mA (Io), Any Speed

4ns

1µA @ 75V

2pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

PG-SC79-2

150°C (Max)

SDT12S60

Infineon Technologies

DIODE SCHOTTKY 600V 12A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 400µA @ 600V
Capacitance @ Vr, F: 450pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存32,232

600V

12A (DC)

1.7V @ 12A

No Recovery Time > 500mA (Io)

0ns

400µA @ 600V

450pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C

SDT10S30

Infineon Technologies

DIODE SCHOTTKY 300V 10A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 300V
Capacitance @ Vr, F: 600pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存9,876

300V

10A (DC)

1.7V @ 10A

No Recovery Time > 500mA (Io)

0ns

200µA @ 300V

600pF @ 0V, 1MHz

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C

SDT06S60

Infineon Technologies

DIODE SCHOTTKY 600V 6A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存30,096

600V

6A (DC)

1.7V @ 6A

No Recovery Time > 500mA (Io)

0ns

200µA @ 600V

300pF @ 0V, 1MHz

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C

SDT04S60

Infineon Technologies

DIODE SCHOTTKY 600V 4A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 150pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存52,524

600V

4A (DC)

1.9V @ 4A

No Recovery Time > 500mA (Io)

0ns

200µA @ 600V

150pF @ 0V, 1MHz

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C

SDP06S60

Infineon Technologies

DIODE SCHOTTKY 600V 6A TO220AB

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: P-TO220AB
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-3

库存15,756

600V

6A (DC)

1.7V @ 6A

No Recovery Time > 500mA (Io)

0ns

200µA @ 600V

300pF @ 0V, 1MHz

Through Hole

TO-220-3

P-TO220AB

-55°C ~ 175°C

BAW78DE6327HTSA1

Infineon Technologies

DIODE GEN PURP 400V 1A SOT89

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1µs
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PG-SOT89
Operating Temperature - Junction: 150°C (Max)

封装: TO-243AA

库存2,656

400V

1A (DC)

1.6V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1µs

1µA @ 400V

10pF @ 0V, 1MHz

Surface Mount

TO-243AA

PG-SOT89

150°C (Max)

IDC20S120C5X1SA1

Infineon Technologies

IC DIODE EMITTER CTLR WAFER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存3,008

-

IDW40G65C5FKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 40A TO247-3

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 40A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 40A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1.4mA @ 650V
Capacitance @ Vr, F: 1140pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-247-3

库存7,360

650V

40A (DC)

1.7V @ 40A

No Recovery Time > 500mA (Io)

0ns

1.4mA @ 650V

1140pF @ 1V, 1MHz

Through Hole

TO-247-3

PG-TO247-3

-55°C ~ 175°C

IDC08S120EX1SA3

Infineon Technologies

DIODE SCHOTTKY 1200V 7.5A DIE

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 7.5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 7.5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 180µA @ 1200V
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C

封装: Die

库存7,488

1200V

7.5A (DC)

1.8V @ 7.5A

No Recovery Time > 500mA (Io)

0ns

180µA @ 1200V

380pF @ 1V, 1MHz

Surface Mount

Die

Sawn on foil

-55°C ~ 175°C

IDW40G65C5BXKSA2

Infineon Technologies

DIODE SCHOTTKY 650V 40A TO247-3

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 20A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 210µA @ 650V
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-247-3

库存3,488

650V

20A (DC)

1.7V @ 20A

No Recovery Time > 500mA (Io)

0ns

210µA @ 650V

590pF @ 1V, 1MHz

Through Hole

TO-247-3

PG-TO247-3

-55°C ~ 175°C

IDC15S120C5X1SA1

Infineon Technologies

IC DIODE EMITTER CTLR WAFER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存5,440

-

IDW32G65C5BXKSA2

Infineon Technologies

DIODE SCHOTTKY 650V 32A TO247-3

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 16A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 16A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 650V
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-247-3

库存2,032

650V

16A (DC)

1.7V @ 16A

No Recovery Time > 500mA (Io)

0ns

200µA @ 650V

470pF @ 1V, 1MHz

Through Hole

TO-247-3

PG-TO247-3

-55°C ~ 175°C

IDC10S120C5X1SA1

Infineon Technologies

IC DIODE EMITTER CTLR WAFER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存3,152

-

IDW24G65C5BXKSA2

Infineon Technologies

DIODE SCHOTTKY 650V 24A TO247-3

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 190µA @ 650V
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-247-3

库存7,824

650V

12A (DC)

1.7V @ 12A

No Recovery Time > 500mA (Io)

0ns

190µA @ 650V

360pF @ 1V, 1MHz

Through Hole

TO-247-3

PG-TO247-3

-55°C ~ 175°C

IDW16G65C5FKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 16A TO247-3

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 16A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 16A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 600µA @ 650V
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-247-3

库存7,568

650V

16A (DC)

1.7V @ 16A

No Recovery Time > 500mA (Io)

0ns

600µA @ 650V

470pF @ 1V, 1MHz

Through Hole

TO-247-3

PG-TO247-3

-55°C ~ 175°C

IDW20G65C5BXKSA2

Infineon Technologies

DIODE SCHOTTKY 650V 20A TO247-3

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 180µA @ 650V
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-247-3

库存3,984

650V

10A (DC)

1.7V @ 10A

No Recovery Time > 500mA (Io)

0ns

180µA @ 650V

300pF @ 1V, 1MHz

Through Hole

TO-247-3

PG-TO247-3

-55°C ~ 175°C

IDH20G65C6XKSA1

Infineon Technologies

SIC DIODES

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存2,848

-

IDC05S120C5X1SA1

Infineon Technologies

IC DIODE EMITTER CTLR WAFER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存6,816

-

IDH16G65C6XKSA1

Infineon Technologies

SIC DIODES

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存7,920

-

IDH12G65C6XKSA1

Infineon Technologies

SIC DIODES

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存4,480

-

IDD12SG60CXTMA2

Infineon Technologies

SIC DIODES

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存2,304

-

IDD12SG60CXTMA1

Infineon Technologies

DIODE SCHOTTKY 600V 12A TO252-3

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 12A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存3,504

600V

12A (DC)

2.1V @ 12A

No Recovery Time > 500mA (Io)

0ns

100µA @ 600V

310pF @ 1V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

PG-TO252-3

-55°C ~ 175°C

IDH10G65C6XKSA1

Infineon Technologies

SIC DIODES

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存2,944

-

IDK09G65C5XTMA2

Infineon Technologies

DIODE SCHOTTKY 650V 9A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 9A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 9A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1.6mA @ 650V
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存5,984

650V

9A (DC)

1.8V @ 9A

No Recovery Time > 500mA (Io)

0ns

1.6mA @ 650V

270pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-2

-55°C ~ 175°C

IDH08G65C6XKSA1

Infineon Technologies

SIC DIODES

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存3,920

-