Infineon Technologies 产品 - 二极管 - 整流器 - 单 | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-87210559 ext.802
登入/注册
BOM
购物车 0

Infineon Technologies 产品 - 二极管 - 整流器 - 单

记录 805
页  1/27
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
56DN06ELEMEVMITPRXPSA1
Infineon Technologies

DIODE GP 600V 6400A E-EUPEC-0

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6400A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: E-EUPEC-0
  • Operating Temperature - Junction: 180°C (Max)
封装: -
Request a Quote
600 V
6400A
1.15 V @ 10000 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 600 V
-
Clamp On
DO-200AB, B-PUK
E-EUPEC-0
180°C (Max)
IDWD75E120D7XKSA1
Infineon Technologies

INDUSTRY 14

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
库存720
-
-
-
-
-
-
-
-
-
-
-
SIDC42D60E6X1SA1
Infineon Technologies

DIODE GP 600V 100A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
600 V
100A
1.25 V @ 100 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
IDWD20E65E7XKSA1
Infineon Technologies

HOME APPLIANCES 14

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 42A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 74 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 650 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: PG-TO247-2-2
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
库存720
650 V
42A
2.1 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
74 ns
20 µA @ 650 V
-
Through Hole
TO-247-2
PG-TO247-2-2
-40°C ~ 175°C
D56S45CS02PRXPSA1
Infineon Technologies

DIODE GP 4.5KV 102A DSW272-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 102A
  • Voltage - Forward (Vf) (Max) @ If: 4.5 V @ 320 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3.3 µs
  • Current - Reverse Leakage @ Vr: 5 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: Stud
  • Supplier Device Package: BG-DSW272-1
  • Operating Temperature - Junction: 125°C (Max)
封装: -
Request a Quote
4500 V
102A
4.5 V @ 320 A
Standard Recovery >500ns, > 200mA (Io)
3.3 µs
5 mA @ 4500 V
-
Stud Mount
Stud
BG-DSW272-1
125°C (Max)
D400K16BXPSA1
Infineon Technologies

DIODE GEN PURP 1.6KV 450A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 450A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
封装: -
Request a Quote
1600 V
450A
-
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 1600 V
-
Stud Mount
DO-205AA, DO-8, Stud
-
-40°C ~ 180°C
DZ540N22KHPSA1
Infineon Technologies

DIODE GEN PURP 2.2KV 732A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io): 732A
  • Voltage - Forward (Vf) (Max) @ If: 1.64 V @ 2200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
2200 V
732A
1.64 V @ 2200 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 2200 V
-
Chassis Mount
Module
Module
-40°C ~ 150°C
SIDC23D120H8X1SA1
Infineon Technologies

DIODE GP 1.2KV 35A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 35 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
1200 V
35A
1.97 V @ 35 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1200 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
IDP06E60XKSA1
Infineon Technologies

DIODE GP 600V 14.7A TO220-2-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 14.7A
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
600 V
14.7A
2 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
70 ns
50 µA @ 600 V
-
Through Hole
TO-220-2
PG-TO220-2-1
-40°C ~ 175°C
SIDC09D60F6X1SA5
Infineon Technologies

DIODE GEN PURP 600V 30A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
600 V
30A
1.6 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
SIDC09D60F6X1SA4
Infineon Technologies

DIODE GEN PURP 600V 30A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
600 V
30A
1.6 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
SIDC09D60F6X1SA1
Infineon Technologies

DIODE GEN PURP 600V 30A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
600 V
30A
1.6 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
SIDC09D60F6X1SA2
Infineon Technologies

DIODE GP 600V 30A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
600 V
30A
1.6 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
ND350N16KHPSA1
Infineon Technologies

DIODE GP 1.6KV 350A PB50ND-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 350A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB50ND-1
  • Operating Temperature - Junction: -40°C ~ 135°C
封装: -
Request a Quote
1600 V
350A
-
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 1600 V
-
Chassis Mount
Module
BG-PB50ND-1
-40°C ~ 135°C
IDDD20G65C6XTMA1
Infineon Technologies

DIODE SIL CARB 650V 51A HDSOP-10

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 51A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 67 µA @ 420 V
  • Capacitance @ Vr, F: 970pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 10-PowerSOP Module
  • Supplier Device Package: PG-HDSOP-10-1
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存4,782
650 V
51A
-
No Recovery Time > 500mA (Io)
0 ns
67 µA @ 420 V
970pF @ 1V, 1MHz
Surface Mount
10-PowerSOP Module
PG-HDSOP-10-1
-55°C ~ 175°C
D2450N04TXPSA1
Infineon Technologies

DIODE GEN PURP 400V 2450A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 2450A
  • Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
封装: -
Request a Quote
400 V
2450A
880 mV @ 2000 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 400 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 180°C
SIDC23D60E6X1SA5
Infineon Technologies

DIODE GEN PURP 600V 50A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
600 V
50A
1.25 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-55°C ~ 150°C
SIDC23D60E6X1SA4
Infineon Technologies

DIODE GP 600V 50A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
600 V
50A
1.25 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC23D60E6X1SA1
Infineon Technologies

DIODE GEN PURP 600V 50A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
600 V
50A
1.25 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-55°C ~ 150°C
ND89N12KHPSA1
Infineon Technologies

DIODE GEN PURP 1.2KV 89A PB20-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 89A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB20-1
  • Operating Temperature - Junction: -40°C ~ 135°C
封装: -
库存48
1200 V
89A
-
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1200 V
-
Chassis Mount
Module
BG-PB20-1
-40°C ~ 135°C
PX8746JDNG029XTMA1
Infineon Technologies

LED PX8746JDNG029XTMA1

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
D3041N58TXPSA1
Infineon Technologies

DIODE GEN PURP 5.8KV 4090A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 5800 V
  • Current - Average Rectified (Io): 4090A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 5800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
5800 V
4090A
1.7 V @ 4000 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 5800 V
-
Chassis Mount
DO-200AE
-
-40°C ~ 160°C
D4201N18TS01VFXPSA1
Infineon Technologies

DIODE GP 2.2KV 6010A D12035K-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io): 6010A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 mA @ 2200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: BG-D12035K-1
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
2200 V
6010A
1 V @ 4000 A
Standard Recovery >500ns, > 200mA (Io)
-
200 mA @ 2200 V
-
Chassis Mount
DO-200AE
BG-D12035K-1
-40°C ~ 160°C
D6001N50TS05XPSA1
Infineon Technologies

DIODE GP 5KV 8010A D15026K-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 5000 V
  • Current - Average Rectified (Io): 8010A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400 mA @ 5000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: BG-D15026K-1
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
5000 V
8010A
1.3 V @ 6000 A
Standard Recovery >500ns, > 200mA (Io)
-
400 mA @ 5000 V
-
Chassis Mount
DO-200AE
BG-D15026K-1
-40°C ~ 160°C
D1800N48TVFXPSA1
Infineon Technologies

DIODE GEN PURP 4.8KV 1800A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4800 V
  • Current - Average Rectified (Io): 1800A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 4800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
4800 V
1800A
1.32 V @ 1500 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 4800 V
-
Clamp On
DO-200AC, K-PUK
-
-40°C ~ 160°C
IDW75E60FKSA1
Infineon Technologies

DIODE GP 600V 120A TO247-3-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 2 V @ 75 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 121 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-1
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
600 V
120A
2 V @ 75 A
Fast Recovery =< 500ns, > 200mA (Io)
121 ns
40 µA @ 600 V
-
Through Hole
TO-247-3
PG-TO247-3-1
-55°C ~ 175°C
PX3746HDNSM1386XTMA1
Infineon Technologies

LED PX3746HDNSM1386XTMA1

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
BAS3005B02VH6327XTSA1
Infineon Technologies

DIODE SCHOTTKY 30V 500MA SC79-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 µA @ 30 V
  • Capacitance @ Vr, F: 10pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: PG-SC79-2
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: -
库存722,334
30 V
500mA
620 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
25 µA @ 30 V
10pF @ 5V, 1MHz
Surface Mount
SC-79, SOD-523
PG-SC79-2
-55°C ~ 125°C
D629N44TPR
Infineon Technologies

RECTIFIER DIODE MODULE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
IDWD50E120D7XKSA1
Infineon Technologies

INDUSTRY 14

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
库存720
-
-
-
-
-
-
-
-
-
-
-