Alpha & Omega Semiconductor Inc. 产品

AOT15B60D

Alpha & Omega Semiconductor Inc.

IGBT 600V 30A 167W TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A
• Power - Max: 167W
• Switching Energy: 420µJ (on), 110µJ (off)
• Input Type: Standard
• Gate Charge: 25.4nC
• Td (on/off) @ 25°C: 21ns/73ns
• Test Condition: 400V, 15A, 20 Ohm, 15V
• Reverse Recovery Time (trr): 196ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

封装: TO-220-3

AON6372

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V DFN

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

AOD474

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 75V 10A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 37.5V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 28.5W (Tc)
• Rds On (Max) @ Id, Vgs: 130 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

AOD2610

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 10A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 71.5W (Tc)
• Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

AO4440

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 5A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 55 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

AOT20C60PL

Alpha & Omega Semiconductor Inc.

MOSFET N-CH

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3607pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 463W (Tc)
• Rds On (Max) @ Id, Vgs: 260 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

封装: TO-220-3

AOT2916L

Alpha & Omega Semiconductor Inc.

MOSFET N CH 100V 5A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 23A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 41.5W (Tc)
• Rds On (Max) @ Id, Vgs: 34 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

封装: TO-220-3

AON7408

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 10A 8DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 448pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 11W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFN (3x3)
• Package / Case: 8-PowerSMD, Flat Leads

封装: 8-PowerSMD, Flat Leads

AO4425

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 38V 14A 8SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 38V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V, 20V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 20V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 14A, 20V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

AO4485

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 40V 10A 8SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.7W (Ta)
• Rds On (Max) @ Id, Vgs: 15 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

AO4854L_102

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A 8SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8A
• Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

AON3818

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 24V 8A

• FET Type: 2 N-Channel (Dual) Common Drain
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 24V
• Current - Continuous Drain (Id) @ 25°C: 8A
• Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 8A, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 12V
• Power - Max: 2.7W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: 8-DFN (2.9x2.3)

封装: 8-SMD, Flat Lead

AOZ1336DI

Alpha & Omega Semiconductor Inc.

4A 5.5V LOAD SWITCH

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 0.8 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 4A
• Rds On (Typ): 27 mOhm
• Input Type: -
• Features: Load Discharge, Slew Rate Controlled
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-WFDFN Exposed Pad
• Supplier Device Package: 8-DFN-EP (2x2)

封装: 8-WFDFN Exposed Pad

AOZ6115CI

Alpha & Omega Semiconductor Inc.

IC ANLG SWITCH SPST SOT23-5

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 1
• On-State Resistance (Max): 3 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 1.65 V ~ 5.5 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 40ns, 20ns
• -3db Bandwidth: 300MHz
• Charge Injection: 2pC
• Channel Capacitance (CS(off), CD(off)): 7.5pF
• Current - Leakage (IS(off)) (Max): 100nA
• Crosstalk: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: SOT-23-5 Thin, TSOT-23-5
• Supplier Device Package: SOT-23-5

封装: SOT-23-5 Thin, TSOT-23-5

AOZ1321DI-06

Alpha & Omega Semiconductor Inc.

IC LOAD SW HI SIDE P-CH 4DFN

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 1.6 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2A
• Rds On (Typ): 60 mOhm
• Input Type: Non-Inverting
• Features: Load Discharge, Slew Rate Controlled
• Fault Protection: -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Package / Case: 4-UFDFN Exposed Pad
• Supplier Device Package: 4-DFN-EP (1.2x1.6)

封装: 4-UFDFN Exposed Pad

AOZ6232QI#A

Alpha & Omega Semiconductor Inc.

IC USB 2.0 SWITCH 10QFN

• Switch Circuit: SPDT
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 2
• On-State Resistance (Max): 400mOhm
• Channel-to-Channel Matching (ΔRon): 40mOhm
• Voltage - Supply, Single (V+): 1.65V ~ 3.3V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 50ns, 25ns
• -3db Bandwidth: 45MHz
• Charge Injection: 9pC
• Channel Capacitance (CS(off), CD(off)): 26pF
• Current - Leakage (IS(off)) (Max): 50nA
• Crosstalk: -95dB @ 100kHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 10-UFQFN
• Supplier Device Package: 10-QFN (1.6x2.1)

封装: 10-UFQFN

AOUS66414

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 40A/92A ULTRASO8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 92A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 6.2W (Ta), 92W (Tc)
• Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: UltraSO-8™
• Package / Case: 3-PowerSMD, Flat Leads

封装: -

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AON6403L

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 21A/85A 8DFN

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 85A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 9120 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.3W (Ta), 83W (Tc)
• Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFN (5x6)
• Package / Case: 8-PowerSMD, Flat Leads

封装: -

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AOTF11N60

Alpha & Omega Semiconductor Inc.

MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 11A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1656 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 50W
• Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

封装: -

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AOB600A70L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 8.5A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 700 V
• Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 104W (Tc)
• Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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AOB66620L

Alpha & Omega Semiconductor Inc.

N

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 57A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs(th) (Max) @ Id: 3.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 8.3W (Ta), 50W (Tc)
• Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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AONS66400

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 5X6 DFN

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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AOZ5279QI

Alpha & Omega Semiconductor Inc.

25V/60A SMART POWER STAGE

• Output Configuration: Half Bridge
• Applications: Synchronous Buck Converters
• Interface: PWM
• Load Type: Inductive, Capacitive
• Technology: DrMOS
• Rds On (Typ): -
• Current - Output / Channel: 60A
• Current - Peak Output: 150A
• Voltage - Supply: 3V ~ 25V
• Voltage - Load: 3V ~ 25V
• Operating Temperature: -40°C ~ 125°C (TJ)
• Features: Bootstrap Circuit, Diode Emulation, Status Flag
• Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
• Mounting Type: Surface Mount
• Package / Case: 39-PowerWFQFN Module
• Supplier Device Package: 39-QFN (5x6)

封装: -

AO4482L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 6A 8SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta)
• Rds On (Max) @ Id, Vgs: 37mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: -

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AO4484L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 10A 8SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.7W (Ta)
• Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: -

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AO4430L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 18A 8SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7270 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta)
• Rds On (Max) @ Id, Vgs: 5.5mOhm @ 18A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: -

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AOZ5039QI

Alpha & Omega Semiconductor Inc.

MOD SYNC BUCK POWER STAGE 35A 25

• Type: MOSFET
• Configuration: 1 Phase
• Current: 50 A
• Voltage: -
• Voltage - Isolation: -
• Package / Case: 31-PowerVFQFN Module

封装: -

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AIM5D05B060M1S

Alpha & Omega Semiconductor Inc.

IPM5

• Type: IGBT
• Configuration: 3 Phase Inverter
• Current: 5 A
• Voltage: 600 V
• Voltage - Isolation: 2000Vrms
• Package / Case: 23-PowerDIP Module (0.748", 19.00mm)

封装: -

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AO6602

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 3.5A 6TSOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.7A (Ta)
• Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 100mOhm @ 2.7A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V, 5.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V, 240pF @ 15V
• Power - Max: 1.15W (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: 6-TSOP

封装: -

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AOT66518L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 150V 30A/120A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs(th) (Max) @ Id: 3.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 10W (Ta), 375W (Tc)
• Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

封装: -