页 133 - Toshiba Semiconductor and Storage 产品 | 深圳黑森尔电子
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Toshiba Semiconductor and Storage 产品

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TPCF8B01(TE85L,F,M
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2.7A VS-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 330mW (Ta)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VS-8 (2.9x1.5)
  • Package / Case: 8-SMD, Flat Lead
封装: 8-SMD, Flat Lead
库存3,328
2SC4793,HFEF(M
Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封装: TO-220-3 Full Pack
库存7,440
2SC2655-Y(T6CN,A,F
Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
  • Power - Max: 900mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封装: TO-226-3, TO-92-3 Long Body
库存5,312
2SA1931,NIKKIQ(J
Toshiba Semiconductor and Storage

TRANS PNP 5A 50V TO220-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
  • Power - Max: 2W
  • Frequency - Transition: 60MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
封装: TO-220-3 Full Pack
库存5,488
RN1115,LF(CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
封装: SC-75, SOT-416
库存2,960
RN1442ATE85LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.2W S-MINI

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 30MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
封装: TO-236-3, SC-59, SOT-23-3
库存5,808
hot 2SC4215-Y(TE85L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ USM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 550MHz
  • Noise Figure (dB Typ @ f): 2dB ~ 5dB @ 100MHz
  • Gain: 17dB ~ 23dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
封装: SC-70, SOT-323
库存13,080
RN1970(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
封装: 6-TSSOP, SC-88, SOT-363
库存24,660
TA78DS05BP,T6F(J
Toshiba Semiconductor and Storage

IC REG LINEAR 30MA LSTM

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 30mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
封装: TO-226-3, TO-92-3 Long Body
库存5,936
TCK322G,LF
Toshiba Semiconductor and Storage

IC MUX LOAD SW 36V DUAL 16WCSP

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 2:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 2.3 V ~ 36 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 2A
  • Rds On (Typ): 98 mOhm
  • Input Type: -
  • Features: Slew Rate Controlled, Status Flag
  • Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,400
TB62213AFTG,8,EL
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48QFN

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: -
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: Parallel
  • Technology: Power MOSFET
  • Step Resolution: 1, 1/2, 1/4
  • Applications: General Purpose
  • Current - Output: 2.4A
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Voltage - Load: 10 V ~ 38 V
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: 48-QFN (7x7)
封装: 48-VFQFN Exposed Pad
库存7,120
TB6641FG,8,EL
Toshiba Semiconductor and Storage

IC DC MOTOR DRVR PAR 16HSOP

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (2)
  • Interface: Parallel, PWM
  • Technology: Power MOSFET
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 1.5A
  • Voltage - Supply: 10 V ~ 45 V
  • Voltage - Load: 10 V ~ 45 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
  • Supplier Device Package: 16-SOP
封装: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
库存5,376
TB62216FG,C,8,EL
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 28HSOP

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: PWM
  • Technology: Power MOSFET
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 2A
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Voltage - Load: 10 V ~ 38 V
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs
  • Supplier Device Package: 28-HSOP
封装: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs
库存18,180
TL3GB-LL1,L
Toshiba Semiconductor and Storage

LED LETERAS WARM WHT 2700K 2SMD

  • Color: White, Warm
  • CCT (K): 2700K
  • Flux @ 85°C, Current - Test: -
  • Flux @ 25°C, Current - Test: 61 lm (56 lm ~ 66 lm)
  • Current - Test: 100mA
  • Voltage - Forward (Vf) (Typ): 5.76V
  • Lumens/Watt @ Current - Test: 106 lm/W
  • CRI (Color Rendering Index): 80
  • Current - Max: 200mA
  • Viewing Angle: -
  • Mounting Type: Surface Mount
  • Package / Case: 1212 (3030 Metric)
  • Supplier Device Package: 3030
  • Size / Dimension: 0.118" L x 0.118" W (3.00mm x 3.00mm)
  • Height - Seated (Max): 0.030" (0.77mm)
封装: 1212 (3030 Metric)
库存3,006
DF2B5M4SL,L3F
Toshiba Semiconductor and Storage

TVS DIODE 3.6VWM 24VC SL2-2

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 3.6V (Max)
  • Voltage - Breakdown (Min): 4V
  • Voltage - Clamping (Max) @ Ipp: 24V
  • Current - Peak Pulse (10/1000µs): 2A (8/20µs)
  • Power - Peak Pulse: 30W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 0.2pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: SL2
封装: 0201 (0603 Metric)
库存217,086
TLP3130(F)
Toshiba Semiconductor and Storage

PHOTORELAY MOSFET 4-SOP

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 8 Ohm
  • Load Current: 160mA
  • Voltage - Input: 1.15VDC
  • Voltage - Load: 0 ~ 20 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 4-SOP (0.173", 4.40mm)
  • Supplier Device Package: 4-SOP (2.54mm)
  • Relay Type: Relay
封装: 4-SOP (0.173", 4.40mm)
库存5,778
TLP176D(F)
Toshiba Semiconductor and Storage

PHOTOCOUPLER GAAS IRED/FET 4-SOP

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 8 Ohm
  • Load Current: 200mA
  • Voltage - Input: 1.15VDC
  • Voltage - Load: 0 ~ 200 V
  • Mounting Type: Surface Mount
  • Termination Style: Gull Wing
  • Package / Case: 4-SOP (0.173", 4.40mm)
  • Supplier Device Package: 4-SOP (2.54mm)
  • Relay Type: Relay
封装: 4-SOP (0.173", 4.40mm)
库存17,028
TLP5754(D4,E
Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRVR SO6L

  • Technology: Optical Coupling
  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Common Mode Transient Immunity (Min): 35kV/µs
  • Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
  • Pulse Width Distortion (Max): 50ns
  • Rise / Fall Time (Typ): 15ns, 8ns
  • Current - Output High, Low: 3A, 3A
  • Current - Peak Output: 4A
  • Voltage - Forward (Vf) (Typ): 1.55V
  • Current - DC Forward (If) (Max): 20mA
  • Voltage - Supply: 15 V ~ 30 V
  • Operating Temperature: -40°C ~ 110°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 6-SO
  • Approvals: CQC, CSA, cUL, UL, VDE
封装: 6-SOIC (0.295", 7.50mm Width)
库存7,326
TC7SZ04AFS,L3J
Toshiba Semiconductor and Storage

IC INVERTER 1CH 1-INP FSV

  • Logic Type: Inverter
  • Number of Circuits: 1
  • Number of Inputs: 1
  • Features: -
  • Voltage - Supply: 1.65 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 32mA, 32mA
  • Logic Level - Low: -
  • Logic Level - High: -
  • Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: fSV
  • Package / Case: SOT-953
封装: SOT-953
库存6,496
TMPM366FYFG
Toshiba Semiconductor and Storage

INTEGRATED CIRCUIT MICROCONTROLL

  • Core Processor: -
  • Core Size: -
  • Speed: -
  • Connectivity: -
  • Peripherals: -
  • Number of I/O: -
  • Program Memory Size: -
  • Program Memory Type: -
  • EEPROM Size: -
  • RAM Size: -
  • Voltage - Supply (Vcc/Vdd): -
  • Data Converters: -
  • Oscillator Type: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存5,504
74VHCV574FT
Toshiba Semiconductor and Storage

X34 OCTAL SCHMITT D-TYPE FLIP-FL

  • Function: Standard
  • Type: D-Type
  • Output Type: Tri-State, Non-Inverted
  • Number of Elements: 1
  • Number of Bits per Element: 8
  • Clock Frequency: 135MHz
  • Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
  • Trigger Type: Positive Edge
  • Current - Output High, Low: 16mA, 16mA
  • Voltage - Supply: 1.8V ~ 5.5V
  • Current - Quiescent (Iq): 2µA
  • Input Capacitance: 4pF
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
封装: 20-TSSOP (0.173", 4.40mm Width)
库存43,158
TCR2LN31,LF
Toshiba Semiconductor and Storage

200MA LDO VOUT=3.1V DROPOUT=200M

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3.1V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.28V @ 150mA
  • Current - Output: 200mA
  • Current - Quiescent (Iq): 2µA
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN Exposed Pad
  • Supplier Device Package: 4-SDFN (0.8x0.8)
封装: 4-XFDFN Exposed Pad
库存98,100
HN1A01FE-GR-LXHF
Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + PNP TR VCEO:-50

  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
封装: -
库存23,076
TRS12N65FB-S1Q
Toshiba Semiconductor and Storage

DIODE ARR SIC SCHOTT 650V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io) (per Diode): 6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 30 µA @ 650 V
  • Operating Temperature - Junction: 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: -
库存159
XPH4R714MC-L1XHQ
Toshiba Semiconductor and Storage

MOSFET P-CH 40V 60A 8SOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 132W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
封装: -
库存133,077
RN4910-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz, 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
封装: -
库存9,000
74VHC174FT
Toshiba Semiconductor and Storage

IC FF D-TYPE SNGL 6BIT 16TSSOPB

  • Function: Master Reset
  • Type: D-Type
  • Output Type: Non-Inverted
  • Number of Elements: 1
  • Number of Bits per Element: 6
  • Clock Frequency: 120 MHz
  • Max Propagation Delay @ V, Max CL: 9.2ns @ 5V, 50pF
  • Trigger Type: Positive Edge
  • Current - Output High, Low: 8mA, 8mA
  • Voltage - Supply: 2V ~ 5.5V
  • Current - Quiescent (Iq): 4 µA
  • Input Capacitance: 4 pF
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
封装: -
库存5,685
TB67S539FTG-O-EL
Toshiba Semiconductor and Storage

40V/2A 32 MICRO-STEP STEPPING MO

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: PWM
  • Technology: NMOS
  • Step Resolution: 1, 1/2, 1/4, 1/8, 1/16, 1/32
  • Applications: General Purpose
  • Current - Output: 2A
  • Voltage - Supply: 6V
  • Voltage - Load: 4.5V ~ 34V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 32-VFQFN Exposed Pad
  • Supplier Device Package: 32-VQFN (5x5)
封装: -
库存4,158
TC7USB40MU-LF-S2E
Toshiba Semiconductor and Storage

IC USB SWITCH SPDT DUAL 10UQFN

  • Applications: USB
  • Multiplexer/Demultiplexer Circuit: 2:1
  • Switch Circuit: SPDT
  • Number of Channels: 2
  • On-State Resistance (Max): 14Ohm
  • Voltage - Supply, Single (V+): 2.3V ~ 4.3V
  • Voltage - Supply, Dual (V±): -
  • -3db Bandwidth: 1.5GHz
  • Features: USB 2.0
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 10-UFQFN
  • Supplier Device Package: 10-UQFN (1.8x1.4)
封装: -
库存98,022
CRS15I30B-TE85L-QM
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 1.5A S-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: 82pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
  • Operating Temperature - Junction: 150°C (Max)
封装: -
库存9,000