Toshiba Semiconductor and Storage 产品

TPC8A05-H(TE12L,QM

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 10A 8SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 13.3 mOhm @ 5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP (5.5x6.0)
• Package / Case: 8-SOIC (0.173", 4.40mm Width)

封装: 8-SOIC (0.173", 4.40mm Width)

TK14N65W,S1F

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13.7A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 690µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 130W (Tc)
• Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.9A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

封装: TO-247-3

TPH3R203NL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 47A 8-SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 300µA
• Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 44W (Tc)
• Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 23.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

封装: 8-PowerVDFN

2SC2482(T6TOJS,F,M

Toshiba Semiconductor and Storage

TRANS NPN 100MA 300V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 300V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
• Power - Max: 900mW
• Frequency - Transition: 50MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

封装: TO-226-3, TO-92-3 Long Body

RN1416,LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.2W S-MINI

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini

封装: TO-236-3, SC-59, SOT-23-3

HN1B04FE-Y,LF

Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A ES6

• Transistor Type: NPN, PNP
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
• Power - Max: 100mW
• Frequency - Transition: 80MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

封装: SOT-563, SOT-666

1SV285TPH3F

Toshiba Semiconductor and Storage

DIODE VARACTOR 10V ESC

• Capacitance @ Vr, F: 2.35pF @ 4V, 1MHz
• Capacitance Ratio: 2.3
• Capacitance Ratio Condition: C1/C4
• Voltage - Peak Reverse (Max): 10V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: ESC

封装: SC-79, SOD-523

HN2S01FUTE85LF

Toshiba Semiconductor and Storage

DIODE ARRAY SCHOTTKY 10V US6

• Diode Configuration: 3 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 10V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20µA @ 10V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

封装: 6-TSSOP, SC-88, SOT-363

TA76431AS(T6SOY,FM

Toshiba Semiconductor and Storage

IC REG LINEAR 100MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 100mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

封装: TO-226-3, TO-92-3 Long Body

TCR2LF18,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 200MA SMV

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.62V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 2µA
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

封装: SC-74A, SOT-753

TCR5AM12,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 500MA 5DFNB

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: 5-DFNB (1.2x1.2)

封装: 4-XDFN Exposed Pad

TB6819AFG,C,EL

Toshiba Semiconductor and Storage

IC PFC CTRLR CCM 8SOP

• Mode: Critical Conduction (CRM)
• Frequency - Switching: 20Khz ~ 150kHz
• Current - Startup: 72.5µA
• Voltage - Supply: 10 V ~ 25 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP

封装: 8-SOIC (0.173", 4.40mm Width)

TB62218AFG,C8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 28HSOP

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: DMOS
• Step Resolution: 1, 1/2, 1/4
• Applications: General Purpose
• Current - Output: 2A
• Voltage - Supply: 4.75 V ~ 5.25 V
• Voltage - Load: 10 V ~ 38 V
• Operating Temperature: -20°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs
• Supplier Device Package: 28-HSOP

封装: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs

TB62208FTG,8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48QFN

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: DMOS
• Step Resolution: 1, 1/2
• Applications: General Purpose
• Current - Output: 1.8A
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: 10 V ~ 38 V
• Operating Temperature: -20°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

封装: 48-VFQFN Exposed Pad

TC74ACT02P

Toshiba Semiconductor and Storage

IC GATE NOR 4CH 2-INP 14-DIP

• Logic Type: NOR Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Quiescent (Max): 4µA
• Current - Output High, Low: 24mA, 24mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 8.3ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Supplier Device Package: 14-DIP
• Package / Case: 14-DIP (0.300", 7.62mm)

封装: 14-DIP (0.300", 7.62mm)

TC74VHC14FK(EL,K)

Toshiba Semiconductor and Storage

IC INV HEX SCHMITT TRIG 14VSSOP

• Logic Type: Inverter
• Number of Circuits: 6
• Number of Inputs: 6
• Features: Schmitt Trigger
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.9 V ~ 1.65 V
• Logic Level - High: 2.2 V ~ 3.85 V
• Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-VSSOP, US14
• Package / Case: 14-VFSOP (0.118", 3.00mm Width)

封装: 14-VFSOP (0.118", 3.00mm Width)

TC7W125FUTE12LF

Toshiba Semiconductor and Storage

IC BUS BUFFER DUAL N-INV SM8

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 7.8mA, 7.8mA
• Voltage - Supply: 2 V ~ 6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
• Supplier Device Package: SM8

封装: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

74VHC4053AFT

Toshiba Semiconductor and Storage

IC MUX/DEMUX TRIPLE 2X1 16TSSOP

• Switch Circuit: SPDT
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 3
• On-State Resistance (Max): 37 Ohm
• Channel-to-Channel Matching (ΔRon): 5 Ohm
• Voltage - Supply, Single (V+): 2 V ~ 5.5 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 12ns, 12ns
• -3db Bandwidth: 280MHz
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 0.5pF, 8.2pF
• Current - Leakage (IS(off)) (Max): 100nA
• Crosstalk: -45dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOPB

封装: 16-TSSOP (0.173", 4.40mm Width)

TMP86FS49BUG(C,JZ)

Toshiba Semiconductor and Storage

IC MCU 8BIT 60KB FLASH 64LQFP

• Core Processor: 870/C
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: I2C, SIO, UART/USART
• Peripherals: LED, PWM, WDT
• Number of I/O: 56
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 2K x 8
• Voltage - Supply (Vcc/Vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

封装: 64-LQFP

DF5A6.2LJE,LM

Toshiba Semiconductor and Storage

TVS DIODE 5VWM ESV

• Type: Zener
• Unidirectional Channels: 4
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5V
• Voltage - Breakdown (Min): 5.9V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 6.5pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

封装: SOT-553

TLP3109(TP,F

Toshiba Semiconductor and Storage

IC PHOTORELAY MOSFET 6-SOP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 70 mOhm
• Load Current: 2A
• Voltage - Input: 1.33VDC
• Voltage - Load: 0 ~ 100 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 6-SOP (0.173", 4.40mm)
• Supplier Device Package: 6-SOP (2.54mm)
• Relay Type: Relay

封装: 6-SOP (0.173", 4.40mm)

TLP290-4(GB,E)

Toshiba Semiconductor and Storage

OPTOISOLTR 2.5KV 4CH TRANS 16-SO

• Number of Channels: 4
• Voltage - Isolation: 2500Vrms
• Current Transfer Ratio (Min): 100% @ 5mA
• Current Transfer Ratio (Max): 400% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: AC, DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.2V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 400mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.179", 4.55mm Width)
• Supplier Device Package: 16-SO

封装: 16-SOIC (0.179", 4.55mm Width)

TLP785(F)

Toshiba Semiconductor and Storage

OPTOISOLATR 5KV TRANSISTOR 4-DIP

• Number of Channels: 1
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (Min): 50% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.15V
• Current - DC Forward (If) (Max): 60mA
• Vce Saturation (Max): 400mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Supplier Device Package: 4-DIP

封装: 4-DIP (0.300", 7.62mm)

7UL1G17FU-LF

Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 3.6V USV

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: Schmitt Trigger
• Output Type: -
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 0.9V ~ 3.6V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: USV

封装: -

CMH07-TE12L-Q-M

Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 2A M-FLAT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: M-FLAT (2.4x3.8)
• Operating Temperature - Junction: -40°C ~ 150°C

封装: -

TK2P60D-TE16L1-NV

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 2A PW-MOLD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 60W (Tc)
• Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: PW-MOLD
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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7UL2T32FK-LF-B

Toshiba Semiconductor and Storage

L-MOS LVP IC VCC: 2.3V-3.6V, SOT

• Logic Type: OR Gate
• Number of Circuits: 2
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2.3V ~ 3.6V
• Current - Quiescent (Max): 1 µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.35V ~ 0.5V
• Logic Level - High: 1.1V ~ 1.2V
• Max Propagation Delay @ V, Max CL: 5ns @ 3.3V, 15pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: US8
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)

封装: -

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TRS4V65H-LQ

Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 4A DFN8X8

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 55 µA @ 650 V
• Capacitance @ Vr, F: 263pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 4-VSFN Exposed Pad
• Supplier Device Package: 4-DFN-EP (8x8)
• Operating Temperature - Junction: 175°C

封装: -

RN4981-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q NPN + PNP BRT, Q1BSR=

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7kOhms
• Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz, 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

封装: -

TW107N65C-S1F

Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247 107MO

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 5V @ 1.2mA
• Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 76W (Tc)
• Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

封装: -