页 120 - Toshiba Semiconductor and Storage 产品

零件编号	制造商	描述	封装	库存
TPCP8001-H(TE85LFM	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 7.2A PS-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 3.6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PS-8 (2.9x2.4) Package / Case: 8-SMD, Flat Lead	封装: 8-SMD, Flat Lead	库存2,608
TK72E08N1,S1X	Toshiba Semiconductor and Storage	MOSFET N CH 80V 72A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 72A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 36A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	封装: TO-220-3	库存6,780
SSM3K37FS,LF	Toshiba Semiconductor and Storage	MOSFET NCH 20V 200MA SSM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V Operating Temperature: 150°C (TA) Mounting Type: Surface Mount Supplier Device Package: SSM Package / Case: SC-75, SOT-416	封装: SC-75, SOT-416	库存96,816
2SC3665-Y,T2F(J	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	封装: SC-71	库存6,528
2SC2229-O(T6SHP1FM	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	封装: TO-226-3, TO-92-3 Long Body	库存3,648
RN1314(TE85L,F)	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.1W USM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	封装: SC-70, SOT-323	库存25,230
RN1609(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.3W SM6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	封装: SC-74, SOT-457	库存5,408
RN4904FE,LF(CB	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.1W ES6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封装: SOT-563, SOT-666	库存27,852
RN1905FE,LF(CB	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.1W ES6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封装: SOT-563, SOT-666	库存29,592
1SV310TPH3F	Toshiba Semiconductor and Storage	DIODE VARACTOR 10V USC Capacitance @ Vr, F: 5.45pF @ 4V, 1MHz Capacitance Ratio: 2.1 Capacitance Ratio Condition: C1/C4 Voltage - Peak Reverse (Max): 10V Diode Type: Single Q @ Vr, F: - Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC	封装: SC-76, SOD-323	库存25,398
TBAS16,LM	Toshiba Semiconductor and Storage	DIODE HS SW 80V 215MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 215mA Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOT-23-3 Flat Leads Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -	封装: SOT-23-3 Flat Leads	库存25,032
TAR5S50TE85LF	Toshiba Semiconductor and Storage	IC REG LINEAR 200MA SMV Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	封装: SC-74A, SOT-753	库存5,344
TB62215AFTG,C8,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 48QFN Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: Power MOSFET Step Resolution: 1, 1/2, 1/4 Applications: General Purpose Current - Output: 3A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 38 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-QFN (7x7)	封装: 48-VFQFN Exposed Pad	库存5,904
TB6585AFTGC8,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 48QFN Motor Type - Stepper: - Motor Type - AC, DC: Brushless DC (BLDC) Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (3) Interface: Parallel Technology: Bi-CMOS Step Resolution: - Applications: General Purpose Current - Output: 1.2A Voltage - Supply: 4.5 V ~ 42 V Voltage - Load: 4.5 V ~ 42 V Operating Temperature: -30°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-QFN (7x7)	封装: 48-VFQFN Exposed Pad	库存7,376
TB67S149FTG,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 48WQFN Motor Type - Stepper: Unipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (2) Interface: Parallel Technology: Power MOSFET Step Resolution: 1 ~ 1/32 Applications: General Purpose Current - Output: 3A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 40 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-WFQFN Exposed Pad Supplier Device Package: 48-WQFN (7x7)	封装: 48-WFQFN Exposed Pad	库存31,320
TC58NVG3S0FTA00	Toshiba Semiconductor and Storage	IC FLASH 8GBIT 25NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封装: 48-TFSOP (0.724", 18.40mm Width)	库存16,956
TC7WPB9307FC(TE85L	Toshiba Semiconductor and Storage	IC BUS SWITCH SPST DUAL CST8 Type: Bus Switch Circuit: 2 x 1:1 Independent Circuits: 1 Current - Output High, Low: - Voltage Supply Source: Dual Supply Voltage - Supply: 1.65 V ~ 5 V, 2.3 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-XFDFN Exposed Pad Supplier Device Package: CST8	封装: 8-XFDFN Exposed Pad	库存44,508
DF2S24FS,L3M	Toshiba Semiconductor and Storage	TVS DIODE 19VWM Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 19V (Max) Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 8.5pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOD-923 Supplier Device Package: SOD-923	封装: SOD-923	库存283,854
TLP631(GB,F)	Toshiba Semiconductor and Storage	OPTOISO 5KV TRANS W/BASE 6DIP Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor with Base Voltage - Output (Max): 55V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Package / Case: 6-DIP (0.300", 7.62mm) Supplier Device Package: 6-DIP	封装: 6-DIP (0.300", 7.62mm)	库存17,340
TLP2601(F)	Toshiba Semiconductor and Storage	OPTOISO 2.5KV OPN COLLECTOR 8DIP Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 2500Vrms Common Mode Transient Immunity (Min): 1kV/µs Input Type: DC Output Type: Open Collector, Schottky Clamped Current - Output / Channel: 25mA Data Rate: 10MBd Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Rise / Fall Time (Typ): 30ns, 30ns Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	封装: 8-DIP (0.300", 7.62mm)	库存4,932
TBD62183AFWG,EL	Toshiba Semiconductor and Storage	TRANSISTOR ARRAY INTERFACE DRIVE Switch Type: - Number of Outputs: - Ratio - Input:Output: - Output Configuration: - Output Type: - Interface: - Voltage - Load: - Voltage - Supply (Vcc/Vdd): - Current - Output (Max): - Rds On (Typ): - Input Type: - Features: - Fault Protection: - Operating Temperature: - Package / Case: 18-SOIC (0.295", 7.50mm Width) Supplier Device Package: 18-SOP	封装: 18-SOIC (0.295", 7.50mm Width)	库存20,424
TC7WB67CFK,LF(CT	Toshiba Semiconductor and Storage	IC SWITCH SPST DUAL US8 Switch Circuit: SPST Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 2 On-State Resistance (Max): 12Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 1.65V ~ 5.5V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 4ns, 4.5ns -3db Bandwidth: - Charge Injection: - Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 1µA Crosstalk: - Operating Temperature: -40°C ~ 85°C Package / Case: 8-VFSOP (0.091", 2.30mm Width) Supplier Device Package: US8	封装: 8-VFSOP (0.091", 2.30mm Width)	库存22,440
7UL1G86FU,LF	Toshiba Semiconductor and Storage	L-MOS LVP SERIES GATE EXCLUSIVE- Logic Type: XOR (Exclusive OR) Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 0.9V ~ 3.6V Current - Quiescent (Max): 1µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.1V ~ 0.4V Logic Level - High: 0.75V ~ 2.48V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	封装: 5-TSSOP, SC-70-5, SOT-353	库存25,728
RN2416-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V SMINI Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	封装: -	库存18,000
TCR2LN30-LSF-SE	Toshiba Semiconductor and Storage	LDO REG VOUT=3.0V I=200MA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3V Voltage - Output (Max): - Voltage Dropout (Max): 0.28V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 2 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	封装: -	库存28,500
TPH3R704PC-LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 82A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta), 90W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	封装: -	库存15,465
TK12P50W-RQ	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR DPA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 600µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	库存5,850
TW045Z120C-S1F	Toshiba Semiconductor and Storage	G3 1200V SIC-MOSFET TO-247-4L 4 FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5V @ 6.7mA Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 182W (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 20A, 18V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-247-4L(X) Package / Case: TO-247-4	封装: -	库存300
TCR2DG27-LF	Toshiba Semiconductor and Storage	LOW DROPOUT (LDO) IOUT: 200MA PD Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.7V Voltage - Output (Max): - Voltage Dropout (Max): 0.12V @ 100mA Current - Output: 200mA Current - Quiescent (Iq): 70 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-UFBGA, WLCSP Supplier Device Package: 4-WCSP (0.79x0.79)	封装: -	Request a Quote
TPN7R504PL-LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 38A 8TSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 610mW (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.1x3.1) Package / Case: 8-PowerVDFN	封装: -	库存8,424

TPCP8001-H(TE85LFM

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 7.2A PS-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 16 mOhm @ 3.6A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PS-8 (2.9x2.4)
Package / Case: 8-SMD, Flat Lead

封装: 8-SMD, Flat Lead

库存2,608

TK72E08N1,S1X

Toshiba Semiconductor and Storage

MOSFET N CH 80V 72A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 72A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 192W (Tc)
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 36A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

封装: TO-220-3

库存6,780

SSM3K37FS,LF

Toshiba Semiconductor and Storage

MOSFET NCH 20V 200MA SSM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 100mW (Ta)
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V
Operating Temperature: 150°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: SSM
Package / Case: SC-75, SOT-416

封装: SC-75, SOT-416

库存96,816

2SC3665-Y,T2F(J

Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

封装: SC-71

库存6,528

2SC2229-O(T6SHP1FM

Toshiba Semiconductor and Storage

TRANS NPN 50MA 150V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

封装: TO-226-3, TO-92-3 Long Body

库存3,648

RN1314(TE85L,F)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W USM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

封装: SC-70, SOT-323

库存25,230

RN1609(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.3W SM6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6

封装: SC-74, SOT-457

库存5,408

RN4904FE,LF(CB

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封装: SOT-563, SOT-666

库存27,852

RN1905FE,LF(CB

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封装: SOT-563, SOT-666

库存29,592

1SV310TPH3F

Toshiba Semiconductor and Storage

DIODE VARACTOR 10V USC

Capacitance @ Vr, F: 5.45pF @ 4V, 1MHz
Capacitance Ratio: 2.1
Capacitance Ratio Condition: C1/C4
Voltage - Peak Reverse (Max): 10V
Diode Type: Single
Q @ Vr, F: -
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC

封装: SC-76, SOD-323

库存25,398

TBAS16,LM

Toshiba Semiconductor and Storage

DIODE HS SW 80V 215MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 215mA
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -

封装: SOT-23-3 Flat Leads

库存25,032

TAR5S50TE85LF

Toshiba Semiconductor and Storage

IC REG LINEAR 200MA SMV

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

封装: SC-74A, SOT-753

库存5,344

TB62215AFTG,C8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48QFN

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: 1, 1/2, 1/4
Applications: General Purpose
Current - Output: 3A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 38 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: 48-QFN (7x7)

封装: 48-VFQFN Exposed Pad

库存5,904

TB6585AFTGC8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48QFN

Motor Type - Stepper: -
Motor Type - AC, DC: Brushless DC (BLDC)
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (3)
Interface: Parallel
Technology: Bi-CMOS
Step Resolution: -
Applications: General Purpose
Current - Output: 1.2A
Voltage - Supply: 4.5 V ~ 42 V
Voltage - Load: 4.5 V ~ 42 V
Operating Temperature: -30°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: 48-QFN (7x7)

封装: 48-VFQFN Exposed Pad

库存7,376

TB67S149FTG,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48WQFN

Motor Type - Stepper: Unipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (2)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: 1 ~ 1/32
Applications: General Purpose
Current - Output: 3A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 40 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Supplier Device Package: 48-WQFN (7x7)

封装: 48-WFQFN Exposed Pad

库存31,320

TC58NVG3S0FTA00

Toshiba Semiconductor and Storage

IC FLASH 8GBIT 25NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封装: 48-TFSOP (0.724", 18.40mm Width)

库存16,956

TC7WPB9307FC(TE85L

Toshiba Semiconductor and Storage

IC BUS SWITCH SPST DUAL CST8

Type: Bus Switch
Circuit: 2 x 1:1
Independent Circuits: 1
Current - Output High, Low: -
Voltage Supply Source: Dual Supply
Voltage - Supply: 1.65 V ~ 5 V, 2.3 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-XFDFN Exposed Pad
Supplier Device Package: CST8

封装: 8-XFDFN Exposed Pad

库存44,508

DF2S24FS,L3M

Toshiba Semiconductor and Storage

TVS DIODE 19VWM

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 19V (Max)
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOD-923
Supplier Device Package: SOD-923

封装: SOD-923

库存283,854

TLP631(GB,F)

Toshiba Semiconductor and Storage

OPTOISO 5KV TRANS W/BASE 6DIP

Number of Channels: 1
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor with Base
Voltage - Output (Max): 55V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 60mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 6-DIP (0.300", 7.62mm)
Supplier Device Package: 6-DIP

封装: 6-DIP (0.300", 7.62mm)

库存17,340

TLP2601(F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV OPN COLLECTOR 8DIP

Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 2500Vrms
Common Mode Transient Immunity (Min): 1kV/µs
Input Type: DC
Output Type: Open Collector, Schottky Clamped
Current - Output / Channel: 25mA
Data Rate: 10MBd
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Rise / Fall Time (Typ): 30ns, 30ns
Voltage - Forward (Vf) (Typ): 1.65V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

封装: 8-DIP (0.300", 7.62mm)

库存4,932

TBD62183AFWG,EL

Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

Switch Type: -
Number of Outputs: -
Ratio - Input:Output: -
Output Configuration: -
Output Type: -
Interface: -
Voltage - Load: -
Voltage - Supply (Vcc/Vdd): -
Current - Output (Max): -
Rds On (Typ): -
Input Type: -
Features: -
Fault Protection: -
Operating Temperature: -
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 18-SOP

封装: 18-SOIC (0.295", 7.50mm Width)

库存20,424

TC7WB67CFK,LF(CT

Toshiba Semiconductor and Storage

IC SWITCH SPST DUAL US8

Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 12Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
-3db Bandwidth: -
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1µA
Crosstalk: -
Operating Temperature: -40°C ~ 85°C
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Supplier Device Package: US8

封装: 8-VFSOP (0.091", 2.30mm Width)

库存22,440

7UL1G86FU,LF

Toshiba Semiconductor and Storage

L-MOS LVP SERIES GATE EXCLUSIVE-

Logic Type: XOR (Exclusive OR)
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 0.9V ~ 3.6V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.1V ~ 0.4V
Logic Level - High: 0.75V ~ 2.48V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: USV
Package / Case: 5-TSSOP, SC-70-5, SOT-353

封装: 5-TSSOP, SC-70-5, SOT-353

库存25,728

RN2416-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

封装: -

库存18,000

TCR2LN30-LSF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=3.0V I=200MA

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.28V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 2 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

封装: -

库存28,500

TPH3R704PC-LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 82A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 830mW (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

封装: -

库存15,465

TK12P50W-RQ

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存5,850

TW045Z120C-S1F

Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247-4L 4

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5V @ 6.7mA
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 20A, 18V
Operating Temperature: 175°C
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L(X)
Package / Case: TO-247-4

封装: -

库存300

TCR2DG27-LF

Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.7V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.12V @ 100mA
Current - Output: 200mA
Current - Quiescent (Iq): 70 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-WCSP (0.79x0.79)

封装: -

Request a Quote

TPN7R504PL-LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 38A 8TSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Package / Case: 8-PowerVDFN

封装: -

库存8,424