页 118 - Toshiba Semiconductor and Storage 产品 | 深圳黑森尔电子
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Toshiba Semiconductor and Storage 产品

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GT8G133(TE12L,Q)
Toshiba Semiconductor and Storage

IGBT 400V 600MW 8TSSOP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A
  • Power - Max: 600mW
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 1.7µs/2µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: 8-TSSOP (0.173", 4.40mm Width)
库存2,100
2SK2962,T6F(J
Toshiba Semiconductor and Storage

MOSFET N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92MOD
  • Package / Case: TO-226-3, TO-92-3 Long Body
封装: TO-226-3, TO-92-3 Long Body
库存4,368
TPCA8105(TE12L,Q,M
Toshiba Semiconductor and Storage

MOSFET P-CH 12V 6A SOP-8 ADV

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存3,232
TK7A55D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 550V 7A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存2,240
TJ15P04M3,RQ(S
Toshiba Semiconductor and Storage

MOSFET P-CH 40V 15A DPAK-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 29W (Tc)
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存6,784
hot TPH1R403NL,L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 60A 8-SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 64W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 30A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存22,200
hot SSM3K301T(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 3.5A TSM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 56 mOhm @ 2A, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSM
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存4,496
SSM6K513NU,LF
Toshiba Semiconductor and Storage

MOSFET NCH 30V 15A UDFNB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFNB (2x2)
  • Package / Case: 6-WDFN Exposed Pad
封装: 6-WDFN Exposed Pad
库存93,756
RN1408,LF(B
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.2W SMINI

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
封装: TO-236-3, SC-59, SOT-23-3
库存5,632
JDV2S10FS(TPL3)
Toshiba Semiconductor and Storage

DIODE STANDARD 10V FSC

  • Diode Type: Standard - Single
  • Voltage - Peak Reverse (Max): 10V
  • Current - Max: -
  • Capacitance @ Vr, F: 3.4pF @ 2.5V, 1MHz
  • Resistance @ If, F: -
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: fSC
封装: 2-SMD, Flat Lead
库存5,664
TB62209FG,EL
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 36HSOP

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: -
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: Parallel
  • Technology: DMOS
  • Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
  • Applications: General Purpose
  • Current - Output: 1.5A
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Voltage - Load: 13 V ~ 34 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 36-BSSOP (0.346", 8.80mm) + 2 Heat Tabs
  • Supplier Device Package: 36-HSOP
封装: 36-BSSOP (0.346", 8.80mm) + 2 Heat Tabs
库存5,872
TB6642FG,8,EL
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 16HSOP

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (2)
  • Interface: Parallel, PWM
  • Technology: Bi-CMOS
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 1.5A
  • Voltage - Supply: 10 V ~ 45 V
  • Voltage - Load: 10 V ~ 45 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
  • Supplier Device Package: 16-HSOP
封装: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
库存4,752
TB62218AFG,8,EL
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 28HSOP

  • Motor Type - Stepper: Bipolar
  • Motor Type - AC, DC: -
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (4)
  • Interface: Parallel
  • Technology: DMOS
  • Step Resolution: 1, 1/2, 1/4
  • Applications: General Purpose
  • Current - Output: 2A
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Voltage - Load: 10 V ~ 38 V
  • Operating Temperature: -20°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs
  • Supplier Device Package: 28-HSOP
封装: 28-BSOP (0.346", 8.80mm) + 2 Heat Tabs
库存13,536
TH58NVG4S0HTAK0
Toshiba Semiconductor and Storage

16GB SLC NAND TSOP 24NM 4K PAGE

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 16Gb (2G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
封装: 48-TFSOP (0.724", 18.40mm Width)
库存4,112
TC74VHC86FTELM
Toshiba Semiconductor and Storage

IC GATE XOR 4CH 2-INP 14-TSSOP

  • Logic Type: XOR (Exclusive OR)
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.5V
  • Logic Level - High: 1.5V
  • Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-TSSOP
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
封装: 14-TSSOP (0.173", 4.40mm Width)
库存3,232
TC74LCX00FN(F,M)
Toshiba Semiconductor and Storage

IC GATE NAND 4CH 2-INP 14-SOL

  • Logic Type: NAND Gate
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 3.6 V
  • Current - Quiescent (Max): 10µA
  • Current - Output High, Low: 24mA, 24mA
  • Logic Level - Low: 0.8V
  • Logic Level - High: 2V
  • Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-SOL
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
封装: 14-SOIC (0.154", 3.90mm Width)
库存5,280
TC74HC04APF
Toshiba Semiconductor and Storage

IC INVERTER HEX 14-DIP

  • Logic Type: Inverter
  • Number of Circuits: 6
  • Number of Inputs: 6
  • Features: -
  • Voltage - Supply: 2 V ~ 6 V
  • Current - Quiescent (Max): 1µA
  • Current - Output High, Low: 5.2mA, 5.2mA
  • Logic Level - Low: 0.5 V ~ 1.8 V
  • Logic Level - High: 1.5 V ~ 4.2 V
  • Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Through Hole
  • Supplier Device Package: 14-DIP
  • Package / Case: 14-DIP (0.300", 7.62mm)
封装: 14-DIP (0.300", 7.62mm)
库存16,524
TC74LCX14FK(EL,K)
Toshiba Semiconductor and Storage

IC INVERTER HEX SCHMITT 14VSSOP

  • Logic Type: Inverter
  • Number of Circuits: 6
  • Number of Inputs: 6
  • Features: Schmitt Trigger
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Current - Quiescent (Max): 10µA
  • Current - Output High, Low: 24mA, 24mA
  • Logic Level - Low: 0.3 V ~ 0.6 V
  • Logic Level - High: 1.35 V ~ 2.2 V
  • Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-VSSOP, US14
  • Package / Case: 14-VFSOP (0.118", 3.00mm Width)
封装: 14-VFSOP (0.118", 3.00mm Width)
库存23,340
TC7WU04FK,LF
Toshiba Semiconductor and Storage

IC INVERTER TRPL 74HCU04 8-SSOP

  • Logic Type: Inverter
  • Number of Circuits: 3
  • Number of Inputs: 3
  • Features: -
  • Voltage - Supply: 2 V ~ 6 V
  • Current - Quiescent (Max): 1µA
  • Current - Output High, Low: 5.2mA, 5.2mA
  • Logic Level - Low: 0.3 V ~ 1.2 V
  • Logic Level - High: 1.7 V ~ 4.8 V
  • Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: US8
  • Package / Case: 8-VFSOP (0.091", 2.30mm Width)
封装: 8-VFSOP (0.091", 2.30mm Width)
库存50,496
TC7W74FU,LF
Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 8SSOP

  • Function: Set(Preset) and Reset
  • Type: D-Type
  • Output Type: Differential
  • Number of Elements: 1
  • Number of Bits per Element: 1
  • Clock Frequency: 67MHz
  • Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF
  • Trigger Type: Positive Edge
  • Current - Output High, Low: 5.2mA, 5.2mA
  • Voltage - Supply: 2 V ~ 6 V
  • Current - Quiescent (Iq): 2µA
  • Input Capacitance: 5pF
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
封装: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
库存310,512
DF3A3.6FU(TE85L,F)
Toshiba Semiconductor and Storage

TVS DIODE 1VWM USM

  • Type: Zener
  • Unidirectional Channels: 2
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 1V
  • Voltage - Breakdown (Min): 3.4V
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 110pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
封装: SC-70, SOT-323
库存45,114
TLP293-4(E
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

  • Number of Channels: 4
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 50% @ 5mA
  • Current Transfer Ratio (Max): 600% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.179", 4.55mm Width)
  • Supplier Device Package: 16-SO
封装: 16-SOIC (0.179", 4.55mm Width)
库存8,622
TB9080FG
Toshiba Semiconductor and Storage

AUTOMOTIVE MOTOR PRE-DRIVER

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushless DC (BLDC)
  • Function: Controller - Speed
  • Output Configuration: Half Bridge (3)
  • Interface: PWM
  • Technology: Bipolar
  • Step Resolution: -
  • Applications: -
  • Current - Output: -
  • Voltage - Supply: 7V ~ 18V
  • Voltage - Load: -
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-LQFP (10x10)
封装: -
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SSM6N62TU-LXHF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.8A UF6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
封装: -
库存3,504
CRZ47-TE85L-Q-M
Toshiba Semiconductor and Storage

DIODE ZENER 47V 700MW SFLAT

  • Voltage - Zener (Nom) (Vz): 47 V
  • Tolerance: ±10%
  • Power - Max: 700 mW
  • Impedance (Max) (Zzt): 65 Ohms
  • Current - Reverse Leakage @ Vr: 10 µA @ 37.6 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: S-FLAT (1.6x3.5)
封装: -
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RN2307-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 10 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70
封装: -
库存18,000
TTD1415B-S4X-S
Toshiba Semiconductor and Storage

TRANSISTOR NPN TO220SIS

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
SSM3K36TU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 500MA UFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
封装: -
库存15,840
RN4909FE-LXHF-CT
Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47kOhms
  • Resistor - Emitter Base (R2) (Ohms): 22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz, 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
封装: -
库存24,000
TPW2900ENH-L1Q
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 142W (Tc)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DSOP Advance
  • Package / Case: 8-PowerWDFN
封装: -
库存14,940