页 76 - Micron Technology Inc. 产品 - 存储器

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT29F2T08EELCHD4-QJ-C	Micron Technology Inc.	TLC 2T 256GX8 FBGA DDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT53E768M32D2NP-046-WT-B-TR	Micron Technology Inc.	LPDDR4 24G 768MX32 FBGA DDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT53E1G64D4HJ-046-AUT-C-TR	Micron Technology Inc.	LPDDR4 64G 1GX64 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 64Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 556-TFBGA Supplier Device Package: 556-WFBGA (12.4x12.4)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	64Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-40°C ~ 125°C (TC)	Surface Mount	556-TFBGA	556-WFBGA (12.4x12.4)
MT53D1G64D4NW-046-WT-A-TR	Micron Technology Inc.	DRAM LPDDR4 64G 1GX64 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT62F3G32D8DV-026-WT-ES-B-TR	Micron Technology Inc.	LPDDR5 96G 3GX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 96Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	96Gbit	Parallel	3.2 GHz	-	-	-	-25°C ~ 85°C	-	-	-
MT40A1G16Z42BWC1	Micron Technology Inc.	DDR4 16GB Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT29AZ2B2BHGTN-18IT-110	Micron Technology Inc.	IC FLASH RAM 1G PARALLEL Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MTFC256GAYAYEA-WT	Micron Technology Inc.	UFS 2T FS175 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT61M512M32KPA-14-N-C	Micron Technology Inc.	GDDR6 16G 512MX32 FBGA DDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT58L1MY18PF-7-5	Micron Technology Inc.	IC SRAM 18MBIT PARALLEL 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 18Mbit Memory Interface: Parallel Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: 4.2 ns Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-FBGA (13x15)	封装: -	Request a Quote	SRAM	SRAM	18Mbit	Parallel	133 MHz	-	4.2 ns	3.135V ~ 3.465V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-FBGA (13x15)
MT53E2G32D4NQ-046-WT-C-TR	Micron Technology Inc.	IC DRAM 64GBIT 2.133GHZ 200VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 64Gbit Memory Interface: - Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 200-VFBGA Supplier Device Package: 200-VFBGA (10x14.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	64Gbit	-	2.133 GHz	-	-	1.1V	-30°C ~ 85°C (TC)	Surface Mount	200-VFBGA	200-VFBGA (10x14.5)
MT29F2T08EELCHD4-T-C-TR	Micron Technology Inc.	TLC 2T 256GX8 FBGA DDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MTFC128GBEAZHF-WT	Micron Technology Inc.	UFS 1T Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT58L512Y32DT-6	Micron Technology Inc.	IC SRAM 18MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 18Mbit Memory Interface: Parallel Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 3.5 ns Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	封装: -	Request a Quote	SRAM	SRAM	18Mbit	Parallel	166 MHz	-	3.5 ns	3.135V ~ 3.465V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
MT29F32G08ABEABM73A3WC1L	Micron Technology Inc.	IC FLASH 32GBIT WAFER Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 32Gbit Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Wafer	封装: -	Request a Quote	FLASH	FLASH - NAND (SLC)	32Gbit	-	-	-	-	-	0°C ~ 70°C	Surface Mount	Die	Wafer
MT57W2MH8CF-4	Micron Technology Inc.	IC SRAM 18MBIT HSTL 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mbit Memory Interface: HSTL Clock Frequency: 250 MHz Write Cycle Time - Word, Page: - Access Time: 450 ps Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-FBGA (13x15)	封装: -	Request a Quote	SRAM	SRAM - Synchronous	18Mbit	HSTL	250 MHz	-	450 ps	1.7V ~ 1.9V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-FBGA (13x15)
MT57W2MH8CF-6	Micron Technology Inc.	IC SRAM 18MBIT PAR 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mbit Memory Interface: Parallel Clock Frequency: 167 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-FBGA (13x15)	封装: -	Request a Quote	SRAM	SRAM - Synchronous	18Mbit	Parallel	167 MHz	-	-	1.7V ~ 1.9V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-FBGA (13x15)
MT57W2MH8CF-5	Micron Technology Inc.	IC SRAM 18MBIT HSTL 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mbit Memory Interface: HSTL Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: 450 ps Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-FBGA (13x15)	封装: -	Request a Quote	SRAM	SRAM - Synchronous	18Mbit	HSTL	200 MHz	-	450 ps	1.7V ~ 1.9V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-FBGA (13x15)
MT53E1G64D4HJ-046-WT-C-TR	Micron Technology Inc.	LPDDR4 64G 1GX64 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 64Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 556-TFBGA Supplier Device Package: 556-WFBGA (12.4x12.4)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	64Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-30°C ~ 85°C (TC)	Surface Mount	556-TFBGA	556-WFBGA (12.4x12.4)
MT29GZ5A5BPGGA-046AIT-87J-TR	Micron Technology Inc.	NAND MCP 8G VFBGA Memory Type: Non-Volatile, Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND (SLC), DRAM - LPDDR4 Memory Size: 4Gbit Memory Interface: ONFI Clock Frequency: - Write Cycle Time - Word, Page: 30ns Access Time: 25 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 149-WFBGA Supplier Device Package: 149-WFBGA (8x9.5)	封装: -	Request a Quote	FLASH, RAM	FLASH - NAND (SLC), DRAM - LPDDR4	4Gbit	ONFI	-	30ns	25 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	149-WFBGA	149-WFBGA (8x9.5)
MT62F1G32D4DS-031-AAT-B-TR	Micron Technology Inc.	LPDDR5 32G 1GX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 32Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	32Gbit	Parallel	3.2 GHz	-	-	1.05V	-40°C ~ 105°C	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
MT29F8G08ABACAM71M3WC1L	Micron Technology Inc.	NAND FLASH 8G, 1GX8, DIE Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 8Gbit Memory Interface: ONFI Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	FLASH	FLASH - NAND (SLC)	8Gbit	ONFI	-	20ns	20 ns	2.7V ~ 3.6V	0°C ~ 70°C (TA)	-	-	-
MT29F8T08EULCHD5-QJ-C-TR	Micron Technology Inc.	TLC 8T 1TX8 FBGA 8DP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT29F2G16ABBGAH4-AIT-G	Micron Technology Inc.	IC FLASH 2GBIT PARALLEL 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	封装: -	Request a Quote	FLASH	FLASH - NAND (SLC)	2Gbit	Parallel	-	-	-	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
MT53E256M32D2DS-046-WT-B	Micron Technology Inc.	IC DRAM 8GBIT 2.133GHZ 200WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gbit Memory Interface: - Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	8Gbit	-	2.133 GHz	-	-	1.1V	-30°C ~ 85°C (TC)	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
MT25QL256ABA8E12-0AUT	Micron Technology Inc.	IC FLASH 256MBIT SPI 24TPBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 1.8ms Access Time: 5 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	封装: -	Request a Quote	FLASH	FLASH - NOR	256Mbit	SPI - Quad I/O	133 MHz	1.8ms	5 ns	2.7V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT29F1T08EBLCHD4-QC-C	Micron Technology Inc.	TLC 1T 128GX8 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MTFC64GAXAUEA-WT-TR	Micron Technology Inc.	UFS 512G Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 512Gbit Memory Interface: UFS2.2 Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	FLASH	FLASH - NAND (SLC)	512Gbit	UFS2.2	-	-	-	-	-25°C ~ 85°C	-	-	-
MT53E1G64D4HJ-046-WT-A	Micron Technology Inc.	LPDDR4 64G 1GX64 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT53E1G64D4HJ-046-WT-C	Micron Technology Inc.	LPDDR4 64G 1GX64 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 64Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 556-TFBGA Supplier Device Package: 556-WFBGA (12.4x12.4)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	64Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-30°C ~ 85°C (TC)	Surface Mount	556-TFBGA	556-WFBGA (12.4x12.4)

MT29F2T08EELCHD4-QJ-C

Micron Technology Inc.

TLC 2T 256GX8 FBGA DDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT53E768M32D2NP-046-WT-B-TR

Micron Technology Inc.

LPDDR4 24G 768MX32 FBGA DDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT53E1G64D4HJ-046-AUT-C-TR

Micron Technology Inc.

LPDDR4 64G 1GX64 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 64Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 556-TFBGA
Supplier Device Package: 556-WFBGA (12.4x12.4)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4X

64Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-40°C ~ 125°C (TC)

Surface Mount

556-TFBGA

556-WFBGA (12.4x12.4)

MT53D1G64D4NW-046-WT-A-TR

Micron Technology Inc.

DRAM LPDDR4 64G 1GX64 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT62F3G32D8DV-026-WT-ES-B-TR

Micron Technology Inc.

LPDDR5 96G 3GX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 96Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

96Gbit

Parallel

3.2 GHz

-

-25°C ~ 85°C

-

MT40A1G16Z42BWC1

Micron Technology Inc.

DDR4 16GB

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

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MT29AZ2B2BHGTN-18IT-110

Micron Technology Inc.

IC FLASH RAM 1G PARALLEL

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MTFC256GAYAYEA-WT

Micron Technology Inc.

UFS 2T FS175

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

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MT61M512M32KPA-14-N-C

Micron Technology Inc.

GDDR6 16G 512MX32 FBGA DDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

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MT58L1MY18PF-7-5

Micron Technology Inc.

IC SRAM 18MBIT PARALLEL 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 18Mbit
Memory Interface: Parallel
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2 ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-FBGA (13x15)

封装: -

Request a Quote

SRAM

18Mbit

Parallel

133 MHz

-

4.2 ns

3.135V ~ 3.465V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-FBGA (13x15)

MT53E2G32D4NQ-046-WT-C-TR

Micron Technology Inc.

IC DRAM 64GBIT 2.133GHZ 200VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 64Gbit
Memory Interface: -
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-VFBGA
Supplier Device Package: 200-VFBGA (10x14.5)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4

64Gbit

-

2.133 GHz

-

1.1V

-30°C ~ 85°C (TC)

Surface Mount

200-VFBGA

200-VFBGA (10x14.5)

MT29F2T08EELCHD4-T-C-TR

Micron Technology Inc.

TLC 2T 256GX8 FBGA DDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MTFC128GBEAZHF-WT

Micron Technology Inc.

UFS 1T

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT58L512Y32DT-6

Micron Technology Inc.

IC SRAM 18MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 18Mbit
Memory Interface: Parallel
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5 ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

封装: -

Request a Quote

SRAM

18Mbit

Parallel

166 MHz

-

3.5 ns

3.135V ~ 3.465V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

MT29F32G08ABEABM73A3WC1L

Micron Technology Inc.

IC FLASH 32GBIT WAFER

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 32Gbit
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Wafer

封装: -

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FLASH

FLASH - NAND (SLC)

32Gbit

-

0°C ~ 70°C

Surface Mount

Die

Wafer

MT57W2MH8CF-4

Micron Technology Inc.

IC SRAM 18MBIT HSTL 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mbit
Memory Interface: HSTL
Clock Frequency: 250 MHz
Write Cycle Time - Word, Page: -
Access Time: 450 ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-FBGA (13x15)

封装: -

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SRAM

SRAM - Synchronous

18Mbit

HSTL

250 MHz

-

450 ps

1.7V ~ 1.9V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-FBGA (13x15)

MT57W2MH8CF-6

Micron Technology Inc.

IC SRAM 18MBIT PAR 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mbit
Memory Interface: Parallel
Clock Frequency: 167 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-FBGA (13x15)

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SRAM

SRAM - Synchronous

18Mbit

Parallel

167 MHz

-

1.7V ~ 1.9V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-FBGA (13x15)

MT57W2MH8CF-5

Micron Technology Inc.

IC SRAM 18MBIT HSTL 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mbit
Memory Interface: HSTL
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: 450 ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-FBGA (13x15)

封装: -

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SRAM

SRAM - Synchronous

18Mbit

HSTL

200 MHz

-

450 ps

1.7V ~ 1.9V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-FBGA (13x15)

MT53E1G64D4HJ-046-WT-C-TR

Micron Technology Inc.

LPDDR4 64G 1GX64 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 64Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 556-TFBGA
Supplier Device Package: 556-WFBGA (12.4x12.4)

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DRAM

SDRAM - Mobile LPDDR4X

64Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-30°C ~ 85°C (TC)

Surface Mount

556-TFBGA

556-WFBGA (12.4x12.4)

MT29GZ5A5BPGGA-046AIT-87J-TR

Micron Technology Inc.

NAND MCP 8G VFBGA

Memory Type: Non-Volatile, Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND (SLC), DRAM - LPDDR4
Memory Size: 4Gbit
Memory Interface: ONFI
Clock Frequency: -
Write Cycle Time - Word, Page: 30ns
Access Time: 25 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 149-WFBGA
Supplier Device Package: 149-WFBGA (8x9.5)

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FLASH, RAM

FLASH - NAND (SLC), DRAM - LPDDR4

4Gbit

ONFI

-

30ns

25 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

149-WFBGA

149-WFBGA (8x9.5)

MT62F1G32D4DS-031-AAT-B-TR

Micron Technology Inc.

LPDDR5 32G 1GX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 32Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

封装: -

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DRAM

SDRAM - Mobile LPDDR5

32Gbit

Parallel

3.2 GHz

-

1.05V

-40°C ~ 105°C

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

MT29F8G08ABACAM71M3WC1L

Micron Technology Inc.

NAND FLASH 8G, 1GX8, DIE

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 8Gbit
Memory Interface: ONFI
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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FLASH

FLASH - NAND (SLC)

8Gbit

ONFI

-

20ns

20 ns

2.7V ~ 3.6V

0°C ~ 70°C (TA)

-

MT29F8T08EULCHD5-QJ-C-TR

Micron Technology Inc.

TLC 8T 1TX8 FBGA 8DP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

MT29F2G16ABBGAH4-AIT-G

Micron Technology Inc.

IC FLASH 2GBIT PARALLEL 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

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FLASH

FLASH - NAND (SLC)

2Gbit

Parallel

-

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

MT53E256M32D2DS-046-WT-B

Micron Technology Inc.

IC DRAM 8GBIT 2.133GHZ 200WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gbit
Memory Interface: -
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

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DRAM

SDRAM - Mobile LPDDR4

8Gbit

-

2.133 GHz

-

1.1V

-30°C ~ 85°C (TC)

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

MT25QL256ABA8E12-0AUT

Micron Technology Inc.

IC FLASH 256MBIT SPI 24TPBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 1.8ms
Access Time: 5 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

封装: -

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FLASH

FLASH - NOR

256Mbit

SPI - Quad I/O

133 MHz

1.8ms

5 ns

2.7V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

MT29F1T08EBLCHD4-QC-C

Micron Technology Inc.

TLC 1T 128GX8 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

MTFC64GAXAUEA-WT-TR

Micron Technology Inc.

UFS 512G

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 512Gbit
Memory Interface: UFS2.2
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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FLASH

FLASH - NAND (SLC)

512Gbit

UFS2.2

-

-25°C ~ 85°C

-

MT53E1G64D4HJ-046-WT-A

Micron Technology Inc.

LPDDR4 64G 1GX64 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

MT53E1G64D4HJ-046-WT-C

Micron Technology Inc.

LPDDR4 64G 1GX64 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 64Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 556-TFBGA
Supplier Device Package: 556-WFBGA (12.4x12.4)

封装: -

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DRAM

SDRAM - Mobile LPDDR4X

64Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-30°C ~ 85°C (TC)

Surface Mount

556-TFBGA

556-WFBGA (12.4x12.4)