页 75 - Micron Technology Inc. 产品 - 存储器

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT62F1G32D2DS-023-AAT-ES-B-TR	Micron Technology Inc.	LPDDR5 32GBIT 32 315/315 TFBGA 2 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MTFC32GAZAQHD-WT-TR	Micron Technology Inc.	EMMC 256G Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 256Gbit Memory Interface: eMMC_5.1 Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA (11.5x13)	封装: -	库存4,533	FLASH	FLASH - NAND (SLC)	256Gbit	eMMC_5.1	200 MHz	-	-	2.7V ~ 3.6V	-25°C ~ 85°C (TA)	Surface Mount	153-VFBGA	153-VFBGA (11.5x13)
MTFC256GBEAZHF-WT-TR	Micron Technology Inc.	UFS 2T Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT29F1T08EBLCHD4-QJ-C	Micron Technology Inc.	TLC 1T 128GX8 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT53E1G16D1ZW-046-AIT-C-TR	Micron Technology Inc.	LPDDR4 16GBIT 16 200/264 TFBGA 1 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 16Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	16Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-40°C ~ 95°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
MT29F512G08EBHAFJ4-3ITF-A	Micron Technology Inc.	IC FLASH 512GBIT PAR 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 512Gbit Memory Interface: Parallel Clock Frequency: 333 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 132-VBGA Supplier Device Package: 132-VBGA (12x18)	封装: -	Request a Quote	FLASH	FLASH - NAND (TLC)	512Gbit	Parallel	333 MHz	-	-	2.5V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	132-VBGA	132-VBGA (12x18)
MT58L64L32PT-10	Micron Technology Inc.	IC SRAM 2MBIT PAR 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 2Mbit Memory Interface: Parallel Clock Frequency: 100 MHz Write Cycle Time - Word, Page: - Access Time: 5 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	封装: -	Request a Quote	SRAM	SRAM - Standard	2Mbit	Parallel	100 MHz	-	5 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
MT29F4G01ABAFD12-AUT-F	Micron Technology Inc.	SLC 4G 4GX1 TBGA AUT Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT29F2T08EMLEEJ4-QD-E-TR	Micron Technology Inc.	TLC 2T 256GX8 VBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT29F2T08EELCHD4-QJ-C-TR	Micron Technology Inc.	TLC 2T 256GX8 FBGA DDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MTFC32GAZAOTD-AIT-TR	Micron Technology Inc.	UFS 256G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT53E1536M64D8HJ-046-AAT-B	Micron Technology Inc.	LPDDR4 96G X64 TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 96Gbit Memory Interface: - Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 556-TFBGA Supplier Device Package: 556-WFBGA (12.4x12.4)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	96Gbit	-	2.133 GHz	-	-	-	-40°C ~ 105°C	Surface Mount	556-TFBGA	556-WFBGA (12.4x12.4)
MT53E1536M64D8HJ-046-AAT-C	Micron Technology Inc.	LPDDR4 96GBIT 64 556/841 TFBGA 8 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT29GZ6A6BPIET-046AIT-112	Micron Technology Inc.	NAND MCP 16GB Memory Type: Non-Volatile, Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND (SLC), DRAM - LPDDR4 Memory Size: 8Gbit (NAND), 8Gbit (LPDDR4) Memory Interface: ONFI Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 20ns, 30ns Access Time: 25 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 149-VFBGA Supplier Device Package: 149-VFBGA (8x9.5)	封装: -	Request a Quote	FLASH, RAM	FLASH - NAND (SLC), DRAM - LPDDR4	8Gbit (NAND), 8Gbit (LPDDR4)	ONFI	2.133 GHz	20ns, 30ns	25 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	149-VFBGA	149-VFBGA (8x9.5)
MT29F1T08EELCEJ4-QJ-C-TR	Micron Technology Inc.	TLC 1T 128GX8 VBGA DDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MTC20C2085S1TC48BAX	Micron Technology Inc.	DDR5 32GB SOEDIMM Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MTFC128GASAONS-IT	Micron Technology Inc.	IC FLASH 1TBIT UFS2.1 153TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Tbit Memory Interface: UFS2.1 Clock Frequency: 52 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 153-TFBGA Supplier Device Package: 153-TFBGA (11.5x13)	封装: -	库存4,518	FLASH	FLASH - NAND	1Tbit	UFS2.1	52 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 95°C (TC)	Surface Mount	153-TFBGA	153-TFBGA (11.5x13)
MTFC32GAPALGT-S1-IT-TR	Micron Technology Inc.	EMMC 256G Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 256Gbit Memory Interface: eMMC_5.1 Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	FLASH	FLASH - NAND (SLC)	256Gbit	eMMC_5.1	200 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	-	-	-
MT29F1T08EEHBFJ4-R-B-TR	Micron Technology Inc.	IC FLASH 1TBIT PARALLEL 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 1Tbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 132-VBGA Supplier Device Package: 132-VBGA (12x18)	封装: -	Request a Quote	FLASH	FLASH - NAND (TLC)	1Tbit	Parallel	-	-	-	1.7V ~ 1.95V	0°C ~ 70°C (TA)	Surface Mount	132-VBGA	132-VBGA (12x18)
MT53E2D1ACY-DC-TR	Micron Technology Inc.	SPECIAL/CUSTOM LPDDR4 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT46H16M32LFB5-6-AAT-C	Micron Technology Inc.	IC DRAM 512MBIT PAR 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 512Mbit Memory Interface: Parallel Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR	512Mbit	Parallel	166 MHz	15ns	5 ns	1.7V ~ 1.95V	-40°C ~ 105°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (8x13)
MT29GZ5A5BPGGA-046AAT-87J	Micron Technology Inc.	NAND MCP 8G VFBGA Memory Type: Non-Volatile, Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND (SLC), DRAM - LPDDR4 Memory Size: 4Gbit Memory Interface: ONFI Clock Frequency: - Write Cycle Time - Word, Page: 30ns Access Time: 25 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 149-WFBGA Supplier Device Package: 149-WFBGA (8x9.5)	封装: -	Request a Quote	FLASH, RAM	FLASH - NAND (SLC), DRAM - LPDDR4	4Gbit	ONFI	-	30ns	25 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 105°C (TA)	Surface Mount	149-WFBGA	149-WFBGA (8x9.5)
MT29RZ4C4DZZMGMF-18W-8C	Micron Technology Inc.	IC FLASH 4GBIT 168BGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT53E512M32D4NQ-053-RS-WT-F-TR	Micron Technology Inc.	LPDDR4 16G 512MX32 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT25QU256ABA8E12-0AUT	Micron Technology Inc.	IC FLASH 256MBIT SPI 24TPBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 1.8ms Access Time: 5 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	封装: -	库存5,787	FLASH	FLASH - NOR	256Mbit	SPI - Quad I/O	166 MHz	1.8ms	5 ns	1.7V ~ 2V	-40°C ~ 125°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT62F4D1ADS-DC-TR	Micron Technology Inc.	LPDDR5 32G 1GX32 FBGA QDP Y31M Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT53E768M32D2ZW-046-AIT-C-TR	Micron Technology Inc.	LPDDR4 24GBIT 32 200/264 TFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT53E768M32D4DE-046-AAT-E-TR	Micron Technology Inc.	LPDDR4 24G 768MX32 FBGA QDP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 24Gbit Memory Interface: LVSTL Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	24Gbit	LVSTL	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-40°C ~ 105°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
MT41K512M16VRP-107-AAT-P	Micron Technology Inc.	DDR3 8G 512MX16 FBGA DDP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (8x14)	封装: -	库存1,299	DRAM	SDRAM - DDR3L	8Gbit	Parallel	933 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 105°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)
MT53E384M64D4NK-046-WT-E	Micron Technology Inc.	IC DRAM 24GBIT 2.133GHZ FBGA QDP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 24Gbit Memory Interface: - Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	24Gbit	-	2.133 GHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-

MT62F1G32D2DS-023-AAT-ES-B-TR

Micron Technology Inc.

LPDDR5 32GBIT 32 315/315 TFBGA 2

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MTFC32GAZAQHD-WT-TR

Micron Technology Inc.

EMMC 256G

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 256Gbit
Memory Interface: eMMC_5.1
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-VFBGA (11.5x13)

封装: -

库存4,533

FLASH

FLASH - NAND (SLC)

256Gbit

eMMC_5.1

200 MHz

-

2.7V ~ 3.6V

-25°C ~ 85°C (TA)

Surface Mount

153-VFBGA

153-VFBGA (11.5x13)

MTFC256GBEAZHF-WT-TR

Micron Technology Inc.

UFS 2T

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT29F1T08EBLCHD4-QJ-C

Micron Technology Inc.

TLC 1T 128GX8 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT53E1G16D1ZW-046-AIT-C-TR

Micron Technology Inc.

LPDDR4 16GBIT 16 200/264 TFBGA 1

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 16Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4X

16Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-40°C ~ 95°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

MT29F512G08EBHAFJ4-3ITF-A

Micron Technology Inc.

IC FLASH 512GBIT PAR 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 512Gbit
Memory Interface: Parallel
Clock Frequency: 333 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 132-VBGA
Supplier Device Package: 132-VBGA (12x18)

封装: -

Request a Quote

FLASH

FLASH - NAND (TLC)

512Gbit

Parallel

333 MHz

-

2.5V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

132-VBGA

132-VBGA (12x18)

MT58L64L32PT-10

Micron Technology Inc.

IC SRAM 2MBIT PAR 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 2Mbit
Memory Interface: Parallel
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: -
Access Time: 5 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

封装: -

Request a Quote

SRAM

SRAM - Standard

2Mbit

Parallel

100 MHz

-

5 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

MT29F4G01ABAFD12-AUT-F

Micron Technology Inc.

SLC 4G 4GX1 TBGA AUT

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT29F2T08EMLEEJ4-QD-E-TR

Micron Technology Inc.

TLC 2T 256GX8 VBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT29F2T08EELCHD4-QJ-C-TR

Micron Technology Inc.

TLC 2T 256GX8 FBGA DDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MTFC32GAZAOTD-AIT-TR

Micron Technology Inc.

UFS 256G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT53E1536M64D8HJ-046-AAT-B

Micron Technology Inc.

LPDDR4 96G X64 TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 96Gbit
Memory Interface: -
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 556-TFBGA
Supplier Device Package: 556-WFBGA (12.4x12.4)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4

96Gbit

-

2.133 GHz

-

-40°C ~ 105°C

Surface Mount

556-TFBGA

556-WFBGA (12.4x12.4)

MT53E1536M64D8HJ-046-AAT-C

Micron Technology Inc.

LPDDR4 96GBIT 64 556/841 TFBGA 8

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT29GZ6A6BPIET-046AIT-112

Micron Technology Inc.

NAND MCP 16GB

Memory Type: Non-Volatile, Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND (SLC), DRAM - LPDDR4
Memory Size: 8Gbit (NAND), 8Gbit (LPDDR4)
Memory Interface: ONFI
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 20ns, 30ns
Access Time: 25 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 149-VFBGA
Supplier Device Package: 149-VFBGA (8x9.5)

封装: -

Request a Quote

FLASH, RAM

FLASH - NAND (SLC), DRAM - LPDDR4

8Gbit (NAND), 8Gbit (LPDDR4)

ONFI

2.133 GHz

20ns, 30ns

25 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

149-VFBGA

149-VFBGA (8x9.5)

MT29F1T08EELCEJ4-QJ-C-TR

Micron Technology Inc.

TLC 1T 128GX8 VBGA DDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MTC20C2085S1TC48BAX

Micron Technology Inc.

DDR5 32GB SOEDIMM

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MTFC128GASAONS-IT

Micron Technology Inc.

IC FLASH 1TBIT UFS2.1 153TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Tbit
Memory Interface: UFS2.1
Clock Frequency: 52 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 153-TFBGA
Supplier Device Package: 153-TFBGA (11.5x13)

封装: -

库存4,518

FLASH

FLASH - NAND

1Tbit

UFS2.1

52 MHz

-

2.7V ~ 3.6V

-40°C ~ 95°C (TC)

Surface Mount

153-TFBGA

153-TFBGA (11.5x13)

MTFC32GAPALGT-S1-IT-TR

Micron Technology Inc.

EMMC 256G

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 256Gbit
Memory Interface: eMMC_5.1
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

FLASH

FLASH - NAND (SLC)

256Gbit

eMMC_5.1

200 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

-

MT29F1T08EEHBFJ4-R-B-TR

Micron Technology Inc.

IC FLASH 1TBIT PARALLEL 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 1Tbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 132-VBGA
Supplier Device Package: 132-VBGA (12x18)

封装: -

Request a Quote

FLASH

FLASH - NAND (TLC)

1Tbit

Parallel

-

1.7V ~ 1.95V

0°C ~ 70°C (TA)

Surface Mount

132-VBGA

132-VBGA (12x18)

MT53E2D1ACY-DC-TR

Micron Technology Inc.

SPECIAL/CUSTOM LPDDR4

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT46H16M32LFB5-6-AAT-C

Micron Technology Inc.

IC DRAM 512MBIT PAR 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 512Mbit
Memory Interface: Parallel
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR

512Mbit

Parallel

166 MHz

15ns

5 ns

1.7V ~ 1.95V

-40°C ~ 105°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (8x13)

MT29GZ5A5BPGGA-046AAT-87J

Micron Technology Inc.

NAND MCP 8G VFBGA

Memory Type: Non-Volatile, Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND (SLC), DRAM - LPDDR4
Memory Size: 4Gbit
Memory Interface: ONFI
Clock Frequency: -
Write Cycle Time - Word, Page: 30ns
Access Time: 25 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 149-WFBGA
Supplier Device Package: 149-WFBGA (8x9.5)

封装: -

Request a Quote

FLASH, RAM

FLASH - NAND (SLC), DRAM - LPDDR4

4Gbit

ONFI

-

30ns

25 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 105°C (TA)

Surface Mount

149-WFBGA

149-WFBGA (8x9.5)

MT29RZ4C4DZZMGMF-18W-8C

Micron Technology Inc.

IC FLASH 4GBIT 168BGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT53E512M32D4NQ-053-RS-WT-F-TR

Micron Technology Inc.

LPDDR4 16G 512MX32 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT25QU256ABA8E12-0AUT

Micron Technology Inc.

IC FLASH 256MBIT SPI 24TPBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 1.8ms
Access Time: 5 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

封装: -

库存5,787

FLASH

FLASH - NOR

256Mbit

SPI - Quad I/O

166 MHz

1.8ms

5 ns

1.7V ~ 2V

-40°C ~ 125°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

MT62F4D1ADS-DC-TR

Micron Technology Inc.

LPDDR5 32G 1GX32 FBGA QDP Y31M

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT53E768M32D2ZW-046-AIT-C-TR

Micron Technology Inc.

LPDDR4 24GBIT 32 200/264 TFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT53E768M32D4DE-046-AAT-E-TR

Micron Technology Inc.

LPDDR4 24G 768MX32 FBGA QDP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 24Gbit
Memory Interface: LVSTL
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4X

24Gbit

LVSTL

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-40°C ~ 105°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

MT41K512M16VRP-107-AAT-P

Micron Technology Inc.

DDR3 8G 512MX16 FBGA DDP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (8x14)

封装: -

库存1,299

DRAM

SDRAM - DDR3L

8Gbit

Parallel

933 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 105°C (TC)

Surface Mount

96-TFBGA

96-FBGA (8x14)

MT53E384M64D4NK-046-WT-E

Micron Technology Inc.

IC DRAM 24GBIT 2.133GHZ FBGA QDP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 24Gbit
Memory Interface: -
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4

24Gbit

-

2.133 GHz

-

1.1V

-30°C ~ 85°C (TC)

-