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Infineon Technologies |
MOSFET N-CH 600V 3TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 877pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,776 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存3,616 |
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Infineon Technologies |
MOSFET N-CH 30V 50A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 85µA
- Gate Charge (Qg) (Max) @ Vgs: 46.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存1,075,200 |
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Infineon Technologies |
MOSFET N-CH 20V 93A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存12,936 |
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Infineon Technologies |
MOSFET N-CH 20V 2.4A MICRO8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
- Vgs (Max): ±12V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.3W (Ta)
- Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro8?
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
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封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
库存48,000 |
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Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 170µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 500V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存4,784 |
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Infineon Technologies |
MOSFET N-CH 25V 41A 8TDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 12V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
- Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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封装: 8-PowerTDFN |
库存4,784 |
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Infineon Technologies |
MOSFET N-CH 650V 15A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 675µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Rds On (Max) @ Id, Vgs: 280 mOhm @ 9.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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封装: TO-220-3 Full Pack |
库存11,340 |
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Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存465,840 |
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Infineon Technologies |
MOSFET P-CH 30V 16A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2820pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存8,082,252 |
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Infineon Technologies |
TRANS PNP 45V 0.1A SOT-323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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封装: SC-70, SOT-323 |
库存4,624 |
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Infineon Technologies |
TRANSISTOR RF NPN 6V TSLP-3
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 9V
- Frequency - Transition: 14GHz
- Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
- Gain: 11.5dB ~ 16dB
- Power - Max: 210mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: PG-TSLP-3
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封装: SC-101, SOT-883 |
库存2,288 |
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Infineon Technologies |
IC REG LINEAR POS ADJ 1A DPAK
- Output Configuration: Positive
- Output Type: Adjustable
- Number of Regulators: 1
- Voltage - Input (Max): 7V
- Voltage - Output (Min/Fixed): 2.5V
- Voltage - Output (Max): 3.6V
- Voltage Dropout (Max): 1.3V @ 1A
- Current - Output: 1A
- Current - Quiescent (Iq): -
- Current - Supply (Max): 10mA
- PSRR: 70dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: 0°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,160 |
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Infineon Technologies |
IC REG LINEAR POS ADJ 70MA 8DSO
- Output Configuration: Positive
- Output Type: Adjustable
- Number of Regulators: 1
- Voltage - Input (Max): 45V
- Voltage - Output (Min/Fixed): Tracking
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.4V @ 70mA
- Current - Output: 70mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 80µA ~ 15mA
- PSRR: 60dB (100Hz)
- Control Features: Enable
- Protection Features: Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-8, e-Pad
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封装: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
库存6,976 |
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Infineon Technologies |
IC SWITCH HISIDE SMART SOT223-4
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 5 V ~ 34 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 700mA
- Rds On (Typ): 160 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
- Operating Temperature: -30°C ~ 85°C (TA)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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封装: TO-261-4, TO-261AA |
库存15,360 |
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Infineon Technologies |
HI/LO SIDE DRVR 8SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.7V, 2.2V
- Current - Peak Output (Source, Sink): 1A, 1A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 200V
- Rise / Fall Time (Typ): 35ns, 20ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存52,692 |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-DIP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 5 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.9V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 130ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
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封装: 8-DIP (0.300", 7.62mm) |
库存31,740 |
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Infineon Technologies |
IC DRIVER BRIDGE 3PHASE 44PLCC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 90ns, 40ns
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 44-LCC (J-Lead), 32 Leads
- Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
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封装: 44-LCC (J-Lead), 32 Leads |
库存6,624 |
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Infineon Technologies |
IC RELAY PHOTOVO 250V 170MA 6SMD
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 15 Ohm
- Load Current: 170mA
- Voltage - Input: 1.2VDC
- Voltage - Load: 0 ~ 250 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 6-SMD (0.300", 7.62mm)
- Supplier Device Package: 6-SMT
- Relay Type: Relay
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封装: 6-SMD (0.300", 7.62mm) |
库存2,826 |
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Infineon Technologies |
MULTI-MARKET MCUS
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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封装: - |
库存3,570 |
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Infineon Technologies |
MOSFET N-CH 30V 24A/100A TDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-6
- Package / Case: 8-PowerTDFN
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封装: - |
库存65,094 |
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Infineon Technologies |
IGBT 3 CHIP 600V WAFER
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 15 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 21ns/110ns
- Test Condition: 300V, 15A, 18Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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封装: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 128KB FLASH 64TQFP
- Core Processor: ARM® Cortex®-M0
- Core Size: 32-Bit Single-Core
- Speed: 48MHz
- Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
- Peripherals: Brown-out Detect/Reset, CapSense, DMA, LVD, POR, PWM, SmartSense, WDT
- Number of I/O: 53
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x12b; D/A 2x7b, 2x8b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (10x10)
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封装: - |
库存951 |
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Infineon Technologies |
SCR MODULE 2600V 350A MODULE
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 2.6 kV
- Current - On State (It (AV)) (Max): 223 A
- Current - On State (It (RMS)) (Max): 350 A
- Voltage - Gate Trigger (Vgt) (Max): 2 V
- Current - Gate Trigger (Igt) (Max): 200 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 4500A @ 50Hz
- Current - Hold (Ih) (Max): 300 mA
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
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封装: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 288KB FLASH 64LQFP
- Core Processor: ARM® Cortex®-M3
- Core Size: 32-Bit
- Speed: 72MHz
- Connectivity: CSIO, I2C, LINbus, UART/USART, USB
- Peripherals: DMA, LVD, POR, PWM, WDT
- Number of I/O: 50
- Program Memory Size: 288KB (288K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 23x12b SAR; D/A 2x10b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-LQFP (10x10)
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封装: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 32KB FLASH 45WLCSP
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
- Number of I/O: 37
- Program Memory Size: 32KB (32K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 4K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b SAR, 8x12b Sigma-Delta; D/A 2x7b, 2x8/13b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 45-XFBGA, WLCSP
- Supplier Device Package: 45-WLCSP (1.99x3.69)
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封装: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 544KB FLASH 120LQFP
- Core Processor: ARM® Cortex®-M4F
- Core Size: 32-Bit
- Speed: 160MHz
- Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
- Peripherals: DMA, LVD, POR, PWM, WDT
- Number of I/O: 100
- Program Memory Size: 544KB (544K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 64K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 24x12b; D/A 2x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 120-LQFP
- Supplier Device Package: 120-LQFP (16x16)
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封装: - |
Request a Quote |
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Infineon Technologies |
SILICON CARBIDE MOSFET
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
- Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
- Vgs (Max): +23V, -5V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-22-1
- Package / Case: 22-PowerBSOP Module
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封装: - |
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Infineon Technologies |
IC SECURITY CTRLR 8/16BIT MFC5.8
- Applications: -
- Core Processor: -
- Program Memory Type: -
- Controller Series: -
- RAM Size: -
- Interface: -
- Number of I/O: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: S-MFC5.8-8-1
- Supplier Device Package: S-MFC5.8-8
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封装: - |
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Infineon Technologies |
TRAVEO-40NM
- Core Processor: ARM® Cortex®-R5F
- Core Size: 32-Bit
- Speed: 132MHz
- Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
- Peripherals: DMA, I2S, LVD, POR, PWM, WDT
- Number of I/O: 94
- Program Memory Size: 112KB (112K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 128K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 40x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 144-LQFP
- Supplier Device Package: 144-LQFP (16x16)
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封装: - |
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