页 539 - Infineon Technologies 产品

零件编号	制造商	描述	封装	库存
AUIRLR2905Z	Infineon Technologies	MOSFET N-CH 55V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 36A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存3,664
IPI037N08N3GHKSA1	Infineon Technologies	MOSFET N-CH 80V 100A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 155µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 3.75 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存3,376
IPA60R600CPXKSA1	Infineon Technologies	MOSFET N-CH 600V 6.1A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 220µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存7,840
IRFR2407TRRPBF	Infineon Technologies	MOSFET N-CH 75V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存5,120
IRFSL23N20D102P	Infineon Technologies	MOSFET N-CH 200V 24A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存38,400
IPB160N08S403ATMA1	Infineon Technologies	MOSFET N-CH TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	封装: TO-263-7, D2Pak (6 Leads + Tab)	库存3,104
IRLZ44ZPBF	Infineon Technologies	MOSFET N-CH 55V 51A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: TO-220-3	库存144,180
BSC900N20NS3 G	Infineon Technologies	MOSFET N-CH 200V 15.2A 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	封装: 8-PowerTDFN	库存80,952
BC847CWH6433XTMA1	Infineon Technologies	TRANS NPN 45V 0.1A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	封装: SC-70, SOT-323	库存5,296
BCR 199L3 E6327	Infineon Technologies	TRANS PREBIAS PNP 250MW TSLP-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	封装: SC-101, SOT-883	库存7,536
BFS17SH6327XTSA1	Infineon Technologies	TRANS RF NPN 15V 25MA SOT363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 800MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封装: 6-VSSOP, SC-88, SOT-363	库存5,440
SIDC05D60C6	Infineon Technologies	DIODE GEN PURP 600V 15A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A (DC) Voltage - Forward (Vf) (Max) @ If: 1.95V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	封装: Die	库存7,952
SIDC01D60C6	Infineon Technologies	DIODE GEN PURP WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封装: Die	库存3,456
IFX21004TNV51AKSA1	Infineon Technologies	IC REG LINEAR 5V/15V TO220-5 Output Configuration: Positive Output Type: Fixed Number of Regulators: 2 Voltage - Input (Max): 40V Voltage - Output (Min/Fixed): 5V, 15V Voltage - Output (Max): - Voltage Dropout (Max): 10V @ 100mA, 6V @ 30mA Current - Output: 100mA, 30mA Current - Quiescent (Iq): - Current - Supply (Max): 1mA ~ 3.5mA PSRR: 55dB (100Hz), 50dB (100Hz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-5 Supplier Device Package: PG-TO220-5	封装: TO-220-5	库存3,520
IR2136STR	Infineon Technologies	IC DRIVER 3PHASE 600V 28-SOIC Driven Configuration: Half-Bridge Channel Type: 3-Phase Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 200mA, 350mA Input Type: Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 125ns, 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	封装: 28-SOIC (0.295", 7.50mm Width)	库存6,752
C165LFHABXQMA1	Infineon Technologies	IC MCU 16BIT ROMLESS 100TQFP Core Processor: C166 Core Size: 16-Bit Speed: 20MHz Connectivity: EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Number of I/O: 77 Program Memory Size: - Program Memory Type: ROMless EEPROM Size: - RAM Size: 2K x 8 Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V Data Converters: - Oscillator Type: External Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存7,792
TLE4983CSF47NHAMA1	Infineon Technologies	IC SPEED SENSOR MAGN PG-SSO-3 Type: - Technology: - Axis: - Output Type: - Sensing Range: - Voltage - Supply: - Current - Supply (Max): - Current - Output (Max): - Resolution: - Bandwidth: - Operating Temperature: - Features: - Package / Case: - Supplier Device Package: -	封装: -	库存3,042
ITS4040DEPDXUMA1	Infineon Technologies	IC SWITCH HISIDE SMART TSDSO-14 Switch Type: General Purpose Number of Outputs: 2 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 8V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.6A Rds On (Typ): 40mOhm Input Type: Non-Inverting Features: Auto Restart Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: PG-TSDSO-14	封装: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad	库存6,112
CY14B116S-BZ35XIT	Infineon Technologies	NVSRAM Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 16Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (15x17)	封装: -	Request a Quote
CY8C4025AXI-S412	Infineon Technologies	IC MCU 32BIT 32KB FLASH 32TQFP Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Single-Core Speed: 24MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Number of I/O: 27 Program Memory Size: 32KB (32K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 4K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x10b; D/A 2x7b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-LQFP Supplier Device Package: 32-TQFP (7x7)	封装: -	库存7,464
CG7703AA	Infineon Technologies	SEMICONDUCTOR OTHER Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
CY9AF344MABGL-GK9E1	Infineon Technologies	IC MCU 32BIT 288KB FLASH 96FBGA Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Speed: 40MHz Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 66 Program Memory Size: 288KB (288K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 32K x 8 Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Data Converters: A/D 17x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 96-LFBGA Supplier Device Package: 96-FBGA (6x6)	封装: -	Request a Quote
BSS119NH7978XTSA1	Infineon Technologies	SMALL SIGNAL N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3-5 Package / Case: TO-236-3, SC-59, SOT-23-3	封装: -	Request a Quote
IPN95R3K7P7ATMA1	Infineon Technologies	MOSFET N-CH 950V 2A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6W (Tc) Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: TO-261-4, TO-261AA	封装: -	库存25,914
CG8425AA	Infineon Technologies	ASYNC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
FP25R12N2T7BPSA1	Infineon Technologies	LOW POWER ECONO IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
FF600R07ME4BPSA1	Infineon Technologies	GBT MODULE 650V 600A IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 600 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 600A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONOD-4	封装: -	库存12
IRF7904TRPBF-1	Infineon Technologies	MOSFET 2N-CH 30V 7.6A/11A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id: 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V Power - Max: 1.4W, 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: -	Request a Quote
S25HS01GTDPBHA033	Infineon Technologies	IC FLASH 1GBIT SPI/QUAD 24FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (8x8)	封装: -	Request a Quote
BSM200GB170DLCE3256HDLA1	Infineon Technologies	IGBT MODULE 1700V 400A 1660W IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote

AUIRLR2905Z

Infineon Technologies

MOSFET N-CH 55V 42A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 36A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存3,664

IPI037N08N3GHKSA1

Infineon Technologies

MOSFET N-CH 80V 100A TO262-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 155µA
Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 3.75 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存3,376

IPA60R600CPXKSA1

Infineon Technologies

MOSFET N-CH 600V 6.1A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-FP
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存7,840

IRFR2407TRRPBF

Infineon Technologies

MOSFET N-CH 75V 42A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存5,120

IRFSL23N20D102P

Infineon Technologies

MOSFET N-CH 200V 24A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存38,400

IPB160N08S403ATMA1

Infineon Technologies

MOSFET N-CH TO263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7750pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-3
Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

封装: TO-263-7, D2Pak (6 Leads + Tab)

库存3,104

IRLZ44ZPBF

Infineon Technologies

MOSFET N-CH 55V 51A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 31A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存144,180

BSC900N20NS3 G

Infineon Technologies

MOSFET N-CH 200V 15.2A 8TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存80,952

BC847CWH6433XTMA1

Infineon Technologies

TRANS NPN 45V 0.1A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

封装: SC-70, SOT-323

库存5,296

BCR 199L3 E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW TSLP-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

封装: SC-101, SOT-883

库存7,536

BFS17SH6327XTSA1

Infineon Technologies

TRANS RF NPN 15V 25MA SOT363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 800MHz
Gain: -
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封装: 6-VSSOP, SC-88, SOT-363

库存5,440

SIDC05D60C6

Infineon Technologies

DIODE GEN PURP 600V 15A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.95V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

封装: Die

库存7,952

SIDC01D60C6

Infineon Technologies

DIODE GEN PURP WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封装: Die

库存3,456

IFX21004TNV51AKSA1

Infineon Technologies

IC REG LINEAR 5V/15V TO220-5

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 2
Voltage - Input (Max): 40V
Voltage - Output (Min/Fixed): 5V, 15V
Voltage - Output (Max): -
Voltage Dropout (Max): 10V @ 100mA, 6V @ 30mA
Current - Output: 100mA, 30mA
Current - Quiescent (Iq): -
Current - Supply (Max): 1mA ~ 3.5mA
PSRR: 55dB (100Hz), 50dB (100Hz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-5
Supplier Device Package: PG-TO220-5

封装: TO-220-5

库存3,520

IR2136STR

Infineon Technologies

IC DRIVER 3PHASE 600V 28-SOIC

Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 125ns, 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

封装: 28-SOIC (0.295", 7.50mm Width)

库存6,752

C165LFHABXQMA1

Infineon Technologies

IC MCU 16BIT ROMLESS 100TQFP

Core Processor: C166
Core Size: 16-Bit
Speed: 20MHz
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Number of I/O: 77
Program Memory Size: -
Program Memory Type: ROMless
EEPROM Size: -
RAM Size: 2K x 8
Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
Data Converters: -
Oscillator Type: External
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存7,792

TLE4983CSF47NHAMA1

Infineon Technologies

IC SPEED SENSOR MAGN PG-SSO-3

Type: -
Technology: -
Axis: -
Output Type: -
Sensing Range: -
Voltage - Supply: -
Current - Supply (Max): -
Current - Output (Max): -
Resolution: -
Bandwidth: -
Operating Temperature: -
Features: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,042

ITS4040DEPDXUMA1

Infineon Technologies

IC SWITCH HISIDE SMART TSDSO-14

Switch Type: General Purpose
Number of Outputs: 2
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 8V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.6A
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Features: Auto Restart
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: PG-TSDSO-14

封装: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad

库存6,112

CY14B116S-BZ35XIT

Infineon Technologies

NVSRAM

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 16Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)

封装: -

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CY8C4025AXI-S412

Infineon Technologies

IC MCU 32BIT 32KB FLASH 32TQFP

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit Single-Core
Speed: 24MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Number of I/O: 27
Program Memory Size: 32KB (32K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 4K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x10b; D/A 2x7b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LQFP
Supplier Device Package: 32-TQFP (7x7)

封装: -

库存7,464

CG7703AA

Infineon Technologies

SEMICONDUCTOR OTHER

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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CY9AF344MABGL-GK9E1

Infineon Technologies

IC MCU 32BIT 288KB FLASH 96FBGA

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit
Speed: 40MHz
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 66
Program Memory Size: 288KB (288K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 32K x 8
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Data Converters: A/D 17x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 96-LFBGA
Supplier Device Package: 96-FBGA (6x6)

封装: -

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BSS119NH7978XTSA1

Infineon Technologies

SMALL SIGNAL N-CHANNEL MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT23-3-5
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: -

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IPN95R3K7P7ATMA1

Infineon Technologies

MOSFET N-CH 950V 2A SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 950 V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 6W (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223
Package / Case: TO-261-4, TO-261AA

封装: -

库存25,914

CG8425AA

Infineon Technologies

ASYNC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

FP25R12N2T7BPSA1

Infineon Technologies

LOW POWER ECONO

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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FF600R07ME4BPSA1

Infineon Technologies

GBT MODULE 650V 600A

IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 600 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 600A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONOD-4

封装: -

库存12

IRF7904TRPBF-1

Infineon Technologies

MOSFET 2N-CH 30V 7.6A/11A 8SO

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
Power - Max: 1.4W, 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: -

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S25HS01GTDPBHA033

Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 24FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (8x8)

封装: -

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BSM200GB170DLCE3256HDLA1

Infineon Technologies

IGBT MODULE 1700V 400A 1660W

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote