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Infineon Technologies |
IGBT 1200V 30A 198W TO220-3
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 30A
- Current - Collector Pulsed (Icm): 52A
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
- Power - Max: 198W
- Switching Energy: 1.9mJ
- Input Type: Standard
- Gate Charge: 130nC
- Td (on/off) @ 25°C: 18ns/580ns
- Test Condition: 800V, 15A, 33 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3
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封装: TO-220-3 |
库存7,040 |
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Infineon Technologies |
IGBT 600V 17A 45W TO220FP
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 17A
- Current - Collector Pulsed (Icm): 92A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
- Power - Max: 45W
- Switching Energy: 130µJ (on), 130µJ (off)
- Input Type: Standard
- Gate Charge: 51nC
- Td (on/off) @ 25°C: 25ns/99ns
- Test Condition: 480V, 12A, 23 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220AB Full-Pak
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封装: TO-220-3 Full Pack |
库存5,120 |
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Infineon Technologies |
MOSFET N-CH 550V 7.1A TO-251
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550V
- Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 66W (Tc)
- Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Stub Leads, IPak
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封装: TO-251-3 Stub Leads, IPak |
库存6,800 |
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Infineon Technologies |
MOSFET N-CH 75V 160A D2PAK-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7580pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 110A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (7-Lead)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
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封装: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
库存66,000 |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存3,072 |
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Infineon Technologies |
MOSFET N-CH 650V 0.4A SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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封装: TO-261-4, TO-261AA |
库存7,136 |
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Infineon Technologies |
MOSFET N-CH 240V 350MA SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Vgs(th) (Max) @ Id: 1V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 108pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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封装: TO-261-4, TO-261AA |
库存3,792 |
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Infineon Technologies |
MOSFET N-CH 100V 42A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存86,064 |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7960pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存54,720 |
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Infineon Technologies |
MOSFET N-CH 600V TO220FP-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 430µA
- Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 32W (Tc)
- Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-FP
- Package / Case: TO-220-3 Full Pack
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封装: TO-220-3 Full Pack |
库存12,726 |
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Infineon Technologies |
MOSFET N-CH 600V 13A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 260µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 400V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 5.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存18,402 |
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Infineon Technologies |
MOSFET N-CH 55V 1.9A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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封装: TO-261-4, TO-261AA |
库存1,386,072 |
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Infineon Technologies |
MOSFET N-CH 12V 200MA SOT-143
- Transistor Type: N-Channel
- Frequency: 45MHz
- Gain: 28dB
- Voltage - Test: 8V
- Current Rating: 30mA
- Noise Figure: 2.8dB
- Current - Test: 10mA
- Power - Output: -
- Voltage - Rated: 12V
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: PG-SOT143-4
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封装: TO-253-4, TO-253AA |
库存42,552 |
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Infineon Technologies |
DIODE PIN ARRAY 150V 200MA SOT23
- Diode Type: PIN - 1 Pair Series Connection
- Voltage - Peak Reverse (Max): 150V
- Current - Max: 200mA
- Capacitance @ Vr, F: 0.6pF @ 35V, 1MHz
- Resistance @ If, F: 1.8 Ohm @ 5mA, 100MHz
- Power Dissipation (Max): 250mW
- Operating Temperature: -
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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封装: TO-236-3, SC-59, SOT-23-3 |
库存2,192 |
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Infineon Technologies |
DIODE PIN 50V 0.1A 0.25W SOT-323
- Diode Type: PIN - 1 Pair Common Anode
- Voltage - Peak Reverse (Max): 50V
- Current - Max: 100mA
- Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
- Resistance @ If, F: 1 Ohm @ 10mA, 100MHz
- Power Dissipation (Max): 250mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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封装: SC-70, SOT-323 |
库存2,224 |
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Infineon Technologies |
IC REG LINEAR 3.3V 180MA 14DSO
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 45V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 180mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 36µA
- PSRR: 60dB (100Hz)
- Control Features: Enable, Reset, Watchdog
- Protection Features: Over Current, Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-14
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封装: 14-SOIC (0.154", 3.90mm Width) |
库存7,472 |
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Infineon Technologies |
IC REG BUCK ADJ 6A SYNC QFN
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 2.5V
- Voltage - Input (Max): 21V
- Voltage - Output (Min/Fixed): 0.6V
- Voltage - Output (Max): 12V
- Current - Output: 6A
- Frequency - Switching: 300kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 15-PowerVQFN
- Supplier Device Package: PQFN (5x6)
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封装: 15-PowerVQFN |
库存2,096 |
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Infineon Technologies |
IC SPEECH AND VOICE MQFP-44
- Function: CODEC
- Interface: IOM-2, SCI
- Number of Circuits: 1
- Voltage - Supply: 5V
- Current - Supply: 97.5mA
- Power (Watts): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 44-QFP
- Supplier Device Package: P-MQFP-44
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封装: 44-QFP |
库存2,624 |
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Infineon Technologies |
IC MCU 16BIT 384KB FLASH 144LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 80MHz
- Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 119
- Program Memory Size: 384KB (384K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 34K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 24x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 144-LQFP Exposed Pad
- Supplier Device Package: 144-LQFP (20x20)
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封装: 144-LQFP Exposed Pad |
库存6,784 |
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Infineon Technologies |
IC MCU 8BIT 8KB FLASH 38TSSOP
- Core Processor: XC800
- Core Size: 8-Bit
- Speed: 86MHz
- Connectivity: SSI, UART/USART
- Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
- Number of I/O: 19
- Program Memory Size: 8KB (8K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 768 x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 8x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 38-TFSOP (0.173", 4.40mm Width)
- Supplier Device Package: 38-TSSOP
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封装: 38-TFSOP (0.173", 4.40mm Width) |
库存3,936 |
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Infineon Technologies |
IC PWR SW HI-SIDE
- Switch Type: -
- Number of Outputs: -
- Ratio - Input:Output: -
- Output Configuration: -
- Output Type: -
- Interface: -
- Voltage - Load: -
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): -
- Input Type: -
- Features: -
- Fault Protection: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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封装: - |
库存2,912 |
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Infineon Technologies |
IGBT MODULE 3300V 1000A
- IGBT Type: Trench Field Stop
- Configuration: Dual Brake Chopper
- Voltage - Collector Emitter Breakdown (Max): 3300 V
- Current - Collector (Ic) (Max): 1000 A
- Power - Max: 11500 W
- Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 1kA
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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封装: - |
Request a Quote |
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Infineon Technologies |
IC FLASH 128MBIT PARALLEL 56FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 128Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 70ns
- Access Time: 70 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 80-VFBGA
- Supplier Device Package: 80-FBGA (8x11)
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封装: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BT 4.0625MB FLSH 272BGA
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
- Core Size: 32-Bit Quad-Core
- Speed: 100MHz, 250MHz
- Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
- Number of I/O: 220
- Program Memory Size: 4.0625MB (4.0625M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 256K x 8
- RAM Size: 768K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 90x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 272-LFBGA
- Supplier Device Package: 272-BGA (16x16)
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封装: - |
Request a Quote |
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Infineon Technologies |
HALF-BRIDGE GATE DRIVER
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, SiC MOSFET
- Voltage - Supply: 13V ~ 20V
- Logic Voltage - VIL, VIH: 1.1V, 1.7V
- Current - Peak Output (Source, Sink): 2.3A, 4.6A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 48ns, 48ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: PG-DSO-16-U02
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封装: - |
库存2,985 |
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Infineon Technologies |
IC MCU 32B 1.03125MB FLSH 120QFP
- Core Processor: ARM® Cortex®-M4F
- Core Size: 32-Bit Single-Core
- Speed: 160MHz
- Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
- Peripherals: DMA, LVD, POR, PWM, WDT
- Number of I/O: 100
- Program Memory Size: 1.03125MB (1.03125M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 128K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 24x12b SAR; D/A 2x12b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 120-LQFP
- Supplier Device Package: 120-LQFP (16x16)
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封装: - |
库存1,500 |
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Infineon Technologies |
AC-DC PWM-PFC CONTROLLER
- Mode: -
- Frequency - Switching: -
- Current - Startup: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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封装: - |
Request a Quote |
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Infineon Technologies |
SILICON CARBIDE MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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封装: - |
Request a Quote |
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Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
- Number of I/O: 54
- Program Memory Size: 256KB (256K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (10x10)
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封装: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BT 4.063MB FLSH 144LQFP
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
- Core Size: 32-Bit Dual-Core
- Speed: 100MHz, 160MHz
- Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
- Number of I/O: 122
- Program Memory Size: 4.063MB (4.063M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 128K x 8
- RAM Size: 512K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 72x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 144-LQFP
- Supplier Device Package: 144-LQFP (20x20)
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封装: - |
Request a Quote |
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